[go: up one dir, main page]

WO2005060058A1 - Laser a semi-conducteur et son procede de fabrication - Google Patents

Laser a semi-conducteur et son procede de fabrication Download PDF

Info

Publication number
WO2005060058A1
WO2005060058A1 PCT/JP2004/018703 JP2004018703W WO2005060058A1 WO 2005060058 A1 WO2005060058 A1 WO 2005060058A1 JP 2004018703 W JP2004018703 W JP 2004018703W WO 2005060058 A1 WO2005060058 A1 WO 2005060058A1
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
grating
semiconductor laser
active
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2004/018703
Other languages
English (en)
Japanese (ja)
Inventor
Kiichi Hamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2005516315A priority Critical patent/JPWO2005060058A1/ja
Publication of WO2005060058A1 publication Critical patent/WO2005060058A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
    • G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Definitions

  • the present invention relates to a semiconductor laser, and more particularly to a dynamic multimode optical interference (active MMI) semiconductor laser and a method for manufacturing the same.
  • active MMI dynamic multimode optical interference
  • optical communication technology that enables high-speed, large-capacity communication is not only a basic system (meaning between metropolitan areas) but also a so-called metro system (meaning urban areas) and access. It has also been applied to areas such as systems (meaning between homes and buildings). Metro / access systems are expected to be used in large quantities (for example, the number of subscribers is expected to increase due to penetration of optical communication technologies such as “Fiber to the Home (FTTH)” into access systems).
  • FTTH Fiber to the Home
  • a transmission light source with low cost and low power consumption is required.
  • transmission light sources with high light output performance are also required. For example, in the case of a metro system, realizing high light output performance eliminates the need to install a repeater along the transmission path, and allows the entire system to be constructed at low cost.
  • DFB-LD distributed feedback semiconductor laser
  • This active MMI semiconductor laser is a semiconductor laser that outputs single-mode light.
  • An active waveguide including an active layer is composed of a 1X1-MMI waveguide and a pair of single-mode waveguides connected to both ends. (A single-mode waveguide designed to propagate only the fundamental mode).
  • the 1X1_MMI waveguide is designed to perform “1X1 operation” based on the MMI theory. The following is a brief explanation of the MMI theory.
  • the MMI theory is known as a theory for designing a 1XN or NXN branching / merging passive optical waveguide (for example, “Lucas B. Soldano”, “Journal of Lightware Technology” Ichi “, Vol. 13, No. 4, pp. 615-627, 1995).
  • This MMI theory (the derived MMI length LTT is given by the following equation.
  • L is the length of the MMI region
  • W1 is the width of the MMI region
  • Nr is the refractive index of the waveguide region
  • Nc is the refractive index of the cladding region
  • ⁇ is the wavelength of the incident light. ⁇ is “0” in the ⁇ mode and “1” in the axis mode.
  • the MMI region operates as a 1 XN optical waveguide.
  • the width of the waveguide can be increased (the area of the active layer can be increased).
  • the element resistance can be reduced and low power consumption characteristics can be realized, as compared with an existing semiconductor laser having the same element length composed only of a single mode waveguide. For this reason, if an active MMI-type semiconductor laser can realize a structure capable of obtaining stable oscillation at a single wavelength, it is considered promising as a future transmission light source for metro / access systems.
  • JP-A-2003-46190 As a semiconductor laser having an MMI waveguide and capable of oscillating at a single wavelength, for example, there is a semiconductor laser described in JP-A-2003-46190.
  • an active region (light emitting region) is constituted only by the MMI waveguide, and a grating is provided in a passive region behind the active region.
  • Japanese Patent Application Laid-Open No. 2003-46190 describes a structure in which an external grating is provided behind an active region.
  • the DFB-LD described in the above non-patent document can oscillate at a single wavelength, but since the waveguide structure is formed of a narrow single-mode waveguide, There's a problem.
  • the device resistance can be reduced by increasing the area of the active layer (light-emitting layer).
  • the active layer light-emitting layer
  • increasing the element length reduces the element resistance S
  • the force S that can be applied and an increase in the element length lead to a decrease in the element yield (production volume), which increases the cost.
  • the DFB-LD has a problem that it cannot achieve the low power consumption characteristics and the high optical output performance required for the transmission light source of the metro / access system.
  • the area of the active layer can be increased, so that low power consumption characteristics and high light required for the transmission light source of the Metro Z access system are required. Output performance can be achieved, but there is a problem that stable oscillation at a single wavelength cannot be obtained.
  • the active MMI semiconductor laser it is conceivable to provide a grating near the active layer like a DFB-LD in order to perform single-wavelength oscillation.
  • a grating near the active layer like a DFB-LD in order to perform single-wavelength oscillation.
  • the main light emitting region is composed of an MMI waveguide
  • there are a plurality of different propagation modes in the MMI waveguide so even if a grating is simply provided near the active layer, stable single-wavelength oscillation can be achieved. It is difficult to achieve.
  • a grating is provided in the passive waveguide region connected to the MMI waveguide, so that a passive region is newly integrated in addition to the active region for light emission.
  • a passive region is newly integrated in addition to the active region for light emission.
  • light loss in the passive region was unavoidable, and the structure was not suitable for increasing the output. It is necessary to form the passive region and the active region in the same device, which is disadvantageous in terms of cost reduction.
  • the same problem occurs in the structure in which the external grating is provided.
  • An object of the present invention is to solve the above-mentioned problems, obtain low power consumption characteristics and high optical output performance required for a transmission light source of a metro / access system, and perform stable single-wavelength oscillation. It is to provide a semiconductor laser which can be used.
  • Another object of the present invention is to provide a method of manufacturing a semiconductor laser capable of manufacturing such a semiconductor laser at a high yield at low cost.
  • Another object of the present invention is to provide an optical communication module including such a semiconductor laser.
  • the semiconductor laser of the present invention is characterized in that at least one multimode interference waveguide
  • the active waveguide is provided in a part of the active waveguide. It has a grating to select a single wavelength from the propagating oscillation light.
  • a single wavelength (single-axis mode) of the oscillating light propagating through the active waveguide is selected by the grating, so that stable laser oscillation at a single wavelength is possible. Therefore, by applying this structure, an active MM type semiconductor laser capable of single-wavelength oscillation can be realized.
  • an active waveguide including a multi-mode interference waveguide since the element resistance can be reduced by increasing the area of the active layer, the same element length consisting of only a single mode waveguide is used. Power consumption characteristics can be greatly improved compared to existing semiconductor lasers. Therefore, it is possible to achieve low power consumption characteristics required for the transmission light source of the Metro Z access system.
  • the kink of the DFB-LD (non-linearity in light output vs. operating current characteristics) is a cause. That is, the center wavelength shift of the active layer itself due to the current injection hardly occurs. For this reason, stable single-wavelength oscillation can be achieved even with a high injection current, thereby realizing high output characteristics.
  • the grating may be provided in the single-mode waveguide. According to this configuration, a single wavelength is selected in the single mode waveguide, and stimulated emission occurs even in the multimode interference waveguide for the selected single wavelength.
  • the grating width should be within 2 times the width of the single-mode waveguide. According to this configuration, among a plurality of transverse modes propagating in the multimode interference waveguide, a single transverse mode can be reflected with respect to the center wavelength of the grating, thereby achieving stable single-wavelength operation. Is done. If the grating width exceeds twice the width of the single-mode waveguide, grating reflection occurs for each transverse mode propagating in the multi-mode interference waveguide, resulting in a stable reflection. It is relatively difficult to obtain single-wavelength oscillation.
  • the grating may be provided over the entire length of the active waveguide, and a phase adjustment region may be provided in a portion of the grating located in the middle of the active waveguide.
  • the phase of the grating is inverted before and after the phase adjustment region, so that the gain difference between the single transverse mode selected by the grating and the other modes is sufficiently large. It becomes possible to take. Therefore, it is possible to realize a single wavelength oscillation at a high yield.
  • a feature of the optical communication module of the present invention is that any one of the semiconductor lasers described above and a circuit for driving the semiconductor laser are housed therein.
  • the method for manufacturing a semiconductor laser according to the present invention includes a step of forming a grating region having a width wider than the width of the single mode waveguide in a region where the single mode waveguide is formed on the semiconductor substrate. And etching the formed grating region into the shape of an active waveguide. According to this manufacturing method, among the above-described semiconductor lasers of the present invention, a semiconductor laser having a structure in which a grating is provided in a single-mode waveguide can be manufactured with high yield and low cost.
  • the width of the single-mode waveguide is not less than twice the width of the single-mode waveguide in the region where the active waveguide is formed on the semiconductor substrate. Forming a grating region having a width over the entire length of the active waveguide; and etching the formed grating region into the shape of the active waveguide. According to this manufacturing method, of the above-described semiconductor lasers of the present invention, it is possible to manufacture a semiconductor laser having a structure in which a grating is provided in a multimode interference waveguide at a low cost with good yield.
  • an active MMI semiconductor laser capable of performing stable single-wavelength oscillation is realized, and low power consumption characteristics and high output required for the transmission light source of the Metro Z access system are achieved. The effect that characteristics can be achieved is produced.
  • FIG. 1A is a schematic diagram when an active MMI semiconductor laser according to a first embodiment of the present invention is viewed from above.
  • FIG. 1B is a cross-sectional view taken along a dashed-dotted line ⁇ _ ⁇ ′ in FIG. 1A.
  • FIG. 1C is a cross-sectional view taken along a dashed-dotted line ⁇ —B ′ in FIG. 1A.
  • FIG. 2 is a schematic view showing a cross-sectional structure of an active layer of the active semiconductor laser shown in FIG. 1.
  • FIG. 3A is a diagram for explaining a manufacturing step of the active semiconductor laser shown in FIGS. 1A to 1C, and is a top view of a grating formation region.
  • FIG. 3D is a view for explaining the manufacturing step of the active semiconductor laser shown in FIGS. 1A-1C, and is a cross-sectional view after the MO-VPE step.
  • FIG. 3C is a view for explaining the manufacturing step of the active semiconductor laser shown in FIGS. 1A to 1C, and is a top view after the formation of a mask for forming a mesa.
  • FIG. 3D is a view for explaining the manufacturing step of the active semiconductor laser shown in FIGS. 1A-1C, and is a cross-sectional view after the mesa is manufactured.
  • FIG. 3A is a view for explaining the manufacturing step of the active semiconductor laser shown in FIGS. 1A-1C, and is a cross-sectional view after the MO-VPE recrystallization growth step.
  • FIG. 3F is a view for explaining the manufacturing step of the active semiconductor laser shown in FIGS. 1A-1C, and is a cross-sectional view after electrodes are formed.
  • FIG. 4 ⁇ is a schematic diagram of an active type semiconductor laser according to a second embodiment of the present invention when viewed from above.
  • FIG. 4 ⁇ is a cross-sectional view taken along a dashed-dotted line ⁇ _ ⁇ ′ in FIG. 4 ⁇ .
  • FIG. 4C is a sectional view taken along dashed-dotted line ⁇ —B ′ in FIG. 4 ⁇ .
  • FIG. 5 is a schematic diagram for explaining the grating region width of the active semiconductor laser shown in FIGS. 4A to 4C.
  • FIG. 6I A third embodiment of the active ⁇ semiconductor laser according to the present invention It is a schematic diagram when it sees.
  • FIG. 6B is a sectional view taken along dashed line AA ′ of FIG. 6A.
  • FIG. 6C is a sectional view taken along dashed line BB ′ in FIG. 6A.
  • FIG. 7A is a schematic diagram for explaining a grating region width of the active MMI type semiconductor laser shown in FIG. 6C.
  • FIG. 1A is a schematic diagram of an active MMI semiconductor laser according to a first embodiment of the present invention as viewed from above.
  • This active MMI semiconductor laser includes an active layer.
  • the active waveguide structure includes a 1 ⁇ 1-MMI waveguide region 111 and a pair of single mode waveguide regions 112 and 113 provided at both ends thereof.
  • An end face of the single mode waveguide area 112 opposite to the side connected to the 1X1-MMI waveguide area 111 is a front end face of the element (hereinafter, simply referred to as a front end face), The laser light is emitted from here.
  • An antireflection film is provided on the front end face (cleavage face).
  • the end surface of the single mode mode waveguide region 113 opposite to the side connected to the 1 ⁇ 1-MMI waveguide region 111 is an end surface on the rear side of the element (hereinafter, simply referred to as a rear end surface).
  • a high reflection film is provided on the rear end face.
  • the front end face provided with the anti-reflection film and the rear end face provided with the high reflection film constitute reflectors before and after the laser resonator.
  • the element length is about 600 zm
  • the length of the single mode waveguide region 112 is about 300 ⁇ m
  • the length of the 11 1 1 1 waveguide region 111 is about 230 111.
  • the waveguide width of the 1 ⁇ 1-MMI waveguide region 111 is about 9 zm
  • the waveguide widths of the single-mode waveguide regions 112 and 113 are both about 2 ⁇ m.
  • FIG. 1B schematically shows a cross-sectional structure taken along a dashed line AA ′ of FIG. 1A.
  • This cross section is obtained by cutting the single mode waveguide region 112 in a direction intersecting the longitudinal direction of the device.
  • the waveguide portion of the single mode mode waveguide region 112 is formed on an n-InP semiconductor substrate 101 by forming an n-InGaAsP guide layer 102, an n-InP cladding layer 103, an active layer (light emitting layer) 104, and a p-InP cladding layer 105.
  • a current block layer in which a p-InP current block layer 131 and an n-InP current block layer 132 are sequentially stacked is formed on both sides of the mesa structure. Is formed.
  • the active layer 104 has an existing structure that is well known for semiconductor lasers. For example, as shown in FIG.
  • the structure is such that an InGaAsP / InGaAsP-MQW (multiple quantum well) layer 109 is sandwiched between InGaAsP-SCH (separated confinement heterostructure) layers 108 from above and below.
  • P _inp cladding layer 106, p-InGaAs contact layer 107, electrodes 135 are sequentially stacked.
  • an electrode 136 is formed on the back surface of the n-InP semiconductor substrate 101.
  • FIG. 1C schematically shows a cross-sectional structure taken along a dashed-dotted line ⁇ _ ⁇ ′ in FIG. 1A.
  • This cross section is composed of the 1 ⁇ 1-MMI waveguide region 111 and the waveguide portions of the single mode waveguide regions 112 and 113. It is cut along the longitudinal direction of the child.
  • a grating 120 having periodic irregularities is formed at the interface between the n-InP semiconductor substrate 101 and the n-InGaAsP guide layer 102 over the longitudinal direction.
  • the normalized coupling constant (kL) by the grating 120 is about 2.
  • the power grating 120 having the same laminated structure as the single mode waveguide region 112 is not formed.
  • the mesa structure limited by the current blocking layer is applied.
  • a current flows through the active layer 104 at the center of the portion. If the current is less than the threshold current, spontaneous emission and absorption occur. If the current exceeds the threshold current (the stimulated emission exceeds the absorption), the laser is ready for oscillation.
  • the light amplified by stimulated emission is, according to the MMI theory, a force that propagates as multi-mode light in the 1 ⁇ 1-MMI waveguide region 111.
  • the light propagates as single mode light.
  • a single wavelength is selected by the grating 120, and one laser oscillates at the selected single wavelength.
  • the selected single wavelength is a wavelength at which the reflectance at the grating 120 is maximized, and can be arbitrarily set by adjusting the interval between the gratings 120.
  • a part of the laser light oscillated at a single wavelength propagates in the rear 1 ⁇ 1—MMI waveguide region 111, further propagates in the single mode waveguide region 113 behind it, and reaches the rear end face. To reach.
  • the single-mode light having the single wavelength that has reached the rear end face is reflected there, propagates again in the single-mode waveguide region 113 and the 1 ⁇ 1 MMI waveguide region 111, and then enters the single-mode waveguide region 112. It reaches and is emitted as laser light from the front end face.
  • the single-wavelength light selected by the single-mode waveguide 112 undergoes stimulated emission even in the 1 ⁇ 1 MMI waveguide region 111, so that stable laser oscillation at a single wavelength is achieved. Operation is realized.
  • the active waveguide has a structure including the 1 ⁇ 1-MMI waveguide region 111, the following advantages are provided in addition to the above features. (1) Since the element resistance can be reduced by increasing the waveguide width (enlarging the area of the active layer), the existing half of the same element length composed of only a single mode waveguide can be used. It has excellent low power consumption characteristics as compared to the semiconductor laser.
  • FIGS. 3A to 3F show a series of manufacturing steps of the active MMI semiconductor laser shown in FIGS. 1A to 1C.
  • FIGS. 3A and 3C are schematic views of the waveguide viewed from the upper surface side
  • FIGS. 3B, 3D, and 3F are cross-sectional views of the waveguide (corresponding to the cross-section taken along a dashed line A-A 'in FIG. 1A). is there.
  • a grating 120 is formed on a part of the n-InP semiconductor substrate 101 by an electron beam exposure method and a usual wet etching method.
  • the formation range of the grating 120 is a range including the single mode waveguide region 112, and the width thereof (in the width direction of the waveguide) is wider than the width of the single mode waveguide region 112.
  • the n_InGaAsP guide layer 102 and n-InP are formed on the n-InP semiconductor substrate 101 on which the grating 120 is formed by metal organic chemical vapor deposition (MO-VPE).
  • MO-VPE metal organic chemical vapor deposition
  • a cladding layer 103, an active layer 104, and a p_InP cladding layer 105 are sequentially formed.
  • a Si ⁇ film is deposited on the entire surface by thermal CVD, and a Si ⁇ mask 130 is formed by using ordinary photolithography and reactive ion etching (RIE). Form.
  • RIE reactive ion etching
  • a mesa is formed using an SiO mask 130 by an inductively coupled plasma (ICP) method.
  • ICP inductively coupled plasma
  • the surface of the n-InP semiconductor substrate 101 is also etched, so that the region of the grating 120 coincides with the single mode waveguide region 112.
  • a p-InP current blocking layer 131 and an n_InP current blocking layer 132 are formed around the mesa using the M ⁇ VPE method, and the Si ⁇ mask remaining on the mesa is formed.
  • an electrode 135 is formed on the upper surface by an electron beam evaporation method, and the back surface of the n-InP semiconductor substrate 101 is polished to form an electrode 136.
  • a plurality of laser elements are formed on the wafer in accordance with the above-described fabrication procedure of Figs. 3A and 3F.
  • a laser element having a structure as shown in FIGS. 1A to 1C is obtained.
  • the rear end face and the front end face of the laser element are respectively formed.
  • an anti-reflection film is formed on the front end face and a high reflection film is formed on the rear end face, respectively, and the manufacture of the device is completed.
  • the grating is directly provided in the active region, and the process of separately integrating the passive region as in a conventional semiconductor laser (see JP-A-2003-46190) is performed. Since it does not include it, it is possible to manufacture laser devices at low cost with good yield.
  • the waveguide structure and the method of manufacturing the same according to the present embodiment described above are merely examples, and the configuration and procedure thereof can be changed as appropriate.
  • the force S using the M ⁇ VPE method as the crystal growth method and for example, a molecular beam growth method (MBE method) may be used instead.
  • MBE method molecular beam growth method
  • the RIE method which is not limited to the ICP method, can be applied to the mesa formation process.
  • the grating 120 is provided on the surface of the n_InP semiconductor substrate 101 under the active layer 104, but the present invention is not limited to this structure. ,. If stable single wavelength oscillation can be obtained, grating 1 20 may be provided in another part. As a specific forming portion of the grating 120, for example,
  • an n-InGaAs guide layer is provided between the p-InP clad layer 105 and the p-InP clad layer 106, and between the n-InGaAs guide layer and the p-InP clad layer 105 or the p-InP clad layer 106. It is also conceivable to provide a grating 120 in the structure.
  • the grating 120 may be formed over the entire length of the single mode waveguide region 112 or may be formed in a part of the single mode waveguide region 112.
  • the grating 120 may be formed in the single mode waveguide region 113 instead of the single mode waveguide region 112, or may be formed in both the single mode waveguide regions 112 and 113. .
  • FIG. 4A is a schematic diagram when an active MMI semiconductor laser according to a second embodiment of the present invention is viewed from above.
  • 4B is a cross-sectional view taken along a dashed-dotted line AA ′ in FIG. 4A
  • FIG. 4C is a cross-sectional view taken along a dashed-dotted line ⁇ _ ⁇ ′ in FIG. 4A.
  • the active ⁇ ⁇ ⁇ ⁇ ⁇ semiconductor laser of the present embodiment also has an active waveguide including an active layer provided in a 1 ⁇ 1 ⁇ ⁇ waveguide region 111 and at both ends thereof.
  • the waveguide structure is basically the same as that of the first embodiment described above except that the formation portion of the grating 120 is different. Is the same as
  • the element length is about 600 zm
  • the single-mode waveguide areas 112 and 113 have a waveguide length of about Sl85 zm and a width of about 2 m.
  • the length of the 1 ⁇ 1—MMI waveguide region 111 is about 230 ⁇ m, and the width is about 9 ⁇ m.
  • the grating 120 is formed on the surface of the n-InP semiconductor substrate 101 below the active layer 104, from the rear end face to the front end face.
  • a ⁇ ⁇ 4 phase adjustment region 121 is formed between the rear end surface and the front end surface of the grating 120.
  • the phase adjustment region 121 is obtained by shifting the pitch of the grating 120 by / 4, and the phase of the grating 120 is inverted with the ⁇ / 4 phase adjustment region 121 interposed therebetween.
  • the width of the grating 120 is the same as the width of these waveguides (about 2 zm).
  • the width of the grating 120 is about 3 xm, and the normalized coupling constant (kL) is about 1. Note that an anti-reflection film is provided on both the rear end face and the front end face.
  • the grating 120 is formed at the waveguide center of the 1 ⁇ 1-MMI waveguide region 111, and the grating width is also the single-mode waveguides 112 and 113 (these are , which is equivalent to a single transverse mode waveguide). According to this structure, among the transverse modes propagating in the 1 ⁇ 1-M Ml waveguide region 111, a single transverse mode can be reflected with respect to the grating center wavelength, so that it is stable. A single wavelength operation is realized.
  • a ⁇ / 4 phase adjustment region 121 is formed in the resonator, and the phase of the grating 120 is inverted with the / 4 phase adjustment region 121 interposed therebetween. Accordingly, it is possible to make the gain difference between the so-called main and sub-modes sufficiently large. Thus, single-wavelength oscillation with a high yield can be realized. Other advantages are the same as those of the first embodiment.
  • the active ⁇ -type semiconductor laser of the present embodiment also basically has a method of forming the force grating 120 that can be manufactured by the steps shown in FIGS. 3A to 3F according to the first embodiment. This is different from the case (process in Fig. 3 ⁇ ). That is, in the present embodiment, as shown in FIG. As described above, the grating 120 is formed on the surface of the n-InP semiconductor substrate 101 in the region where the active waveguide is formed, over the entire length of the active waveguide.
  • the width A of the grating 120 is set to be equal to or more than the waveguide width B (same as the waveguide width of the single mode waveguide 113) of the single mode waveguide 112 to be formed in a later step and within twice the waveguide width B. .
  • the waveguide width B of the single mode waveguide 112 is about 2 zm
  • the width A of the grating 120 is about 3 zm.
  • the width A of the grating 120 be sufficiently larger than the waveguide width B.
  • the steps shown in FIGS. 3B to 3F are performed. Then, the rear end face and the front end face of the laser element are formed by cleavage, and an antireflection film is formed on both end faces, thereby completing the manufacture of the element. Thus, a laser device having the structure shown in FIGS. 4A and 4C is obtained.
  • a molecular beam growth method MBE method
  • the RIE method can be used instead of the ICP method.
  • the formation position of the grating 120 can be changed in a range where stable single-wavelength oscillation can be obtained.
  • the grating 120 may be provided at any of the positions a) to d) described in the first embodiment.
  • grating 120 is 1 X 1-M
  • FIG. 6A is a schematic diagram when an active MMI semiconductor laser according to a third embodiment of the present invention is viewed from above.
  • FIG. 6B is a cross-sectional view taken along a dashed-dotted line A—A ′ in FIG.
  • FIG. 6C is a sectional view taken along dashed line BB ′ in FIG. 6A.
  • the active MMI semiconductor laser of the present embodiment has the 1 ⁇ 1-MMI waveguide region 111 in the structure of the second embodiment described above, One 1X1-MMI waveguide region llla, 111b is replaced by a single mode waveguide region 114 connecting these.
  • the other parts are basically the same as those shown in FIGS. 4A to 4C.
  • the element length is about 600 / im.
  • the single-mode waveguide regions 112 and 113 both have a waveguide length of about 40 xm and a width of about 2 zm.
  • Each of the lXl_MMI waveguide regions llla and 11 lb has a waveguide length of about 230 ⁇ m and a width of about 9 xm.
  • the length of the single mode waveguide region 114 is about 60 ⁇ m and the width is about 2 ⁇ m.
  • the grating 120 is formed on the surface of the n_InP semiconductor substrate 101 under the active layer 104 and extends from the rear end face to the front end face. Have been.
  • the ⁇ 4 phase adjustment region 121 is obtained by shifting the pitch of the grating 120 by ⁇ / 4, and the phase of the grating 120 is inverted with the ⁇ / 4 phase adjustment region 121 interposed therebetween.
  • the width of the grating 120 is the same as the width of these waveguides (about 2 ⁇ ).
  • the single mode waveguide region 112 The width is set to within twice (about 4 / im) the width of the waveguide of 113.
  • the width of the grating 120 is about 3 ⁇
  • the normalized coupling constant (kL) is about 1. Note that an antireflection film is provided on both the rear end face and the front end face.
  • the grating 120 is formed at the center of the waveguide in the 1 ⁇ 1—MMI waveguide region llla, 1 lib, and the force of the grating is the same as that of the single mode waveguide 112 —
  • the width is set to within twice the width of the 114 waveguide. Therefore, among the transverse modes propagating in the 1X1-MMI waveguide regions llla and 111b, a single transverse mode can be reflected with respect to the center wavelength of the grating, thereby achieving a stable single-wavelength operation.
  • Other advantages are the same as those of the first and second embodiments described above.
  • the active MMI semiconductor laser of the present embodiment also basically has a force 1 ⁇ 1 MMI waveguide region and grating that can be manufactured by the steps shown in FIGS. 3A to 3F.
  • the region in which the metal is formed is different from the case of the first and second embodiments described above (the steps of FIGS. 3A and 5A). That is, in the present embodiment, as shown in FIG. 7, the grating 120 includes the 1 ⁇ 1-MMI waveguide regions ll la and 111b and the sinal mode waveguide region 112 114 on the surface of the n-InP semiconductor substrate 101. In the region where the active waveguide is formed, it is formed over the entire length of the active waveguide.
  • the width of the grating 120 is set to be equal to or larger than the waveguide width of the single mode waveguides 112 to 114 formed in a later step and equal to or smaller than twice the waveguide width.
  • the waveguide width of the single mode waveguide 112 114 is about, and the width of the grating 120 is about 3 ⁇ m.
  • an active waveguide including the 1 ⁇ 1—MMI waveguide region 11 la, 11 lb and the single mode waveguide region 112 114 is formed. Then, the rear end face and the front end face of the laser element are formed by cleavage, and antireflection films are formed on both end faces, thereby completing the manufacture of the element. Thus, a laser device having the structure shown in FIGS. 6A and 6C is obtained.
  • the waveguide structure and the method of manufacturing the same according to the present embodiment described above are merely examples, and the configuration and procedure thereof can be changed as appropriate.
  • a molecular beam growth method MBE method
  • an RIE method can be used instead of the ICP method.
  • the formation position of the grating 120 can be changed within a range where stable single-wavelength oscillation can be obtained.
  • the grating 120 may be provided at any of the positions a) and d) described in the first embodiment.
  • the grating 120 may be provided only in the 1 ⁇ 1-M Ml waveguide region l la, 111b. Further, the grating 120 may be provided only on one of the 11_1 ⁇ 1 ⁇ 1 waveguide regions 111 & and 11lb.
  • the number of 1 ⁇ 1-MMI waveguide regions can also be changed without increasing the element length.
  • three or more 1 ⁇ 1-MMI waveguide regions may be provided.
  • the active waveguide including the active layer is partially configured by the 1 ⁇ 1-M Ml waveguide, but the present invention is not limited to this. What is done for example, it is also possible to use a 1 XN-MMI waveguide or a NXN-MMI waveguide instead of a 1 X 1-MMI waveguide.
  • a 1 ⁇ N-MMI waveguide is used, the “N” side is on the rear side, the “1” side is on the front side, and the single mode waveguide 113 is provided on the rear side at a position corresponding to the N branch.
  • a single mode waveguide 112 is provided at a position corresponding to the N branch on the front side, and a single mode waveguide 113 is provided at a position corresponding to the N branch on the rear side.
  • the waveguide structure of each of the above-described embodiments has a structure in which a single mode waveguide is connected to both ends of the MMI waveguide, but only the front or rear side of the MMI waveguide has a single mode. It is also possible to adopt a structure having a mode waveguide.
  • the end face of the MMI waveguide on which the single mode waveguide is not provided is the laser element end face. For example, when there is no single mode waveguide on the rear side, the rear end face of the MMI waveguide becomes the rear end face of the laser element, and a high reflection film is formed on this end face.
  • an optical communication module such as an optical transmission module / optical transmission / reception module can be configured.
  • the active MMI semiconductor laser of the present invention and a circuit for driving the semiconductor laser are mounted.
  • the active MMI semiconductor laser of the present invention, a circuit for driving the semiconductor laser, and a light receiving unit for receiving light input from the outside are mounted.
  • various other circuits such as a modulation circuit and a waveform shaping circuit
  • These optical communication modules can be driven at a low voltage by using the active MMI semiconductor laser of the present invention. Therefore, it is possible to provide a module which is excellent in low power consumption, which has not existed conventionally.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à semi-conducteur comportant un guide d'ondes actif constitué d'une région de guide d'ondes 1x1-MMI (111) et d'une régions de guide d'ondes monomodes (112, 113) qui sont reliées aux deux extrémités de ladite région de guide d'ondes 1x1-MMI (111). La région de guide d'ondes monomode (112) est pourvue d'un réseau pour la sélection d'une seule longueur d'onde de la lumière oscillante se propageant à travers le guide d'ondes actif.
PCT/JP2004/018703 2003-12-18 2004-12-15 Laser a semi-conducteur et son procede de fabrication Ceased WO2005060058A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005516315A JPWO2005060058A1 (ja) 2003-12-18 2004-12-15 半導体レーザーおよびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-420742 2003-12-18
JP2003420742 2003-12-18

Publications (1)

Publication Number Publication Date
WO2005060058A1 true WO2005060058A1 (fr) 2005-06-30

Family

ID=34697259

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/018703 Ceased WO2005060058A1 (fr) 2003-12-18 2004-12-15 Laser a semi-conducteur et son procede de fabrication

Country Status (2)

Country Link
JP (1) JPWO2005060058A1 (fr)
WO (1) WO2005060058A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1833128A1 (fr) * 2006-03-10 2007-09-12 Fujitsu Limited Dispositif semi-conducteur optique comportant un réseau de diffraction
WO2008117527A1 (fr) * 2007-03-23 2008-10-02 Kyushu University, National University Corporation Diode électroluminescente haute intensité
WO2009119131A1 (fr) * 2008-03-28 2009-10-01 日本電気株式会社 Élément émetteur de lumière à semiconducteur et son procédé de fabrication
JP2011109001A (ja) * 2009-11-20 2011-06-02 Kyushu Univ 導波路型光フィルター及び半導体レーザー
CN103915758A (zh) * 2014-03-26 2014-07-09 中国科学院上海微系统与信息技术研究所 一种多模干涉结构太赫兹量子级联激光器及制作方法
JP2017157583A (ja) * 2016-02-29 2017-09-07 日本オクラロ株式会社 光送信モジュール

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369886A (ja) * 1991-06-19 1992-12-22 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法
JPH06310801A (ja) * 1993-04-26 1994-11-04 Yokogawa Electric Corp 半導体レーザ
JPH1168222A (ja) * 1997-08-11 1999-03-09 Oki Electric Ind Co Ltd 半導体レーザの製造方法
JP2003046190A (ja) * 2001-07-30 2003-02-14 Hitachi Ltd 半導体レーザ
JP2003273462A (ja) * 2002-03-14 2003-09-26 Nec Corp 半導体レーザーモジュール、ファイバー型光増幅器、光中継器、および光伝送システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369886A (ja) * 1991-06-19 1992-12-22 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法
JPH06310801A (ja) * 1993-04-26 1994-11-04 Yokogawa Electric Corp 半導体レーザ
JPH1168222A (ja) * 1997-08-11 1999-03-09 Oki Electric Ind Co Ltd 半導体レーザの製造方法
JP2003046190A (ja) * 2001-07-30 2003-02-14 Hitachi Ltd 半導体レーザ
JP2003273462A (ja) * 2002-03-14 2003-09-26 Nec Corp 半導体レーザーモジュール、ファイバー型光増幅器、光中継器、および光伝送システム

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1833128A1 (fr) * 2006-03-10 2007-09-12 Fujitsu Limited Dispositif semi-conducteur optique comportant un réseau de diffraction
US7738523B2 (en) 2006-03-10 2010-06-15 Fujitsu Limited Optical semiconductor device having diffraction grating
WO2008117527A1 (fr) * 2007-03-23 2008-10-02 Kyushu University, National University Corporation Diode électroluminescente haute intensité
JPWO2008117527A1 (ja) * 2007-03-23 2010-07-15 国立大学法人九州大学 高輝度発光ダイオード
US8295663B2 (en) 2007-03-23 2012-10-23 Kyushu University, National University Corporation Super-luminescent light emitting diode
WO2009119131A1 (fr) * 2008-03-28 2009-10-01 日本電気株式会社 Élément émetteur de lumière à semiconducteur et son procédé de fabrication
JP2011109001A (ja) * 2009-11-20 2011-06-02 Kyushu Univ 導波路型光フィルター及び半導体レーザー
CN103915758A (zh) * 2014-03-26 2014-07-09 中国科学院上海微系统与信息技术研究所 一种多模干涉结构太赫兹量子级联激光器及制作方法
JP2017157583A (ja) * 2016-02-29 2017-09-07 日本オクラロ株式会社 光送信モジュール

Also Published As

Publication number Publication date
JPWO2005060058A1 (ja) 2007-07-12

Similar Documents

Publication Publication Date Title
JP5287460B2 (ja) 半導体レーザ
JP3985159B2 (ja) 利得クランプ型半導体光増幅器
US9088132B2 (en) Semiconductor optical element, integrated semiconductor optical element, and semiconductor optical element module
JP6487195B2 (ja) 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール
US9728938B2 (en) Optical semiconductor device, optical semiconductor device array, and optical transmitter module
JP3244115B2 (ja) 半導体レーザー
JP2016178283A (ja) 波長可変レーザ素子およびレーザモジュール
JP6588859B2 (ja) 半導体レーザ
JP6247944B2 (ja) 水平共振器面出射型レーザ素子
JP3284994B2 (ja) 半導体光集積素子及びその製造方法
US7466736B2 (en) Semiconductor laser diode, semiconductor optical amplifier, and optical communication device
JP2007158057A (ja) 集積レーザ装置
JP2017204600A (ja) 半導体レーザ
JP2012256667A (ja) 半導体レーザ光源
WO2005060058A1 (fr) Laser a semi-conducteur et son procede de fabrication
JP6610834B2 (ja) 波長可変レーザ装置
JP2000077771A (ja) 半導体光増幅装置
JP5987251B2 (ja) 半導体レーザー
US20050226283A1 (en) Single-mode semiconductor laser with integrated optical waveguide filter
JP2004055647A (ja) 分布ブラッグ反射型半導体レーザ、集積型半導体レーザ、半導体レーザモジュール、光ネットワークシステム
JP5034572B2 (ja) 光源装置
JP5163355B2 (ja) 半導体レーザ装置
JP3529275B2 (ja) 波長多重光源
JP7694707B2 (ja) 波長多重光源
JP4582289B2 (ja) 半導体レーザー

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2005516315

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase