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WO2009034939A1 - 有機薄膜製造方法 - Google Patents

有機薄膜製造方法 Download PDF

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Publication number
WO2009034939A1
WO2009034939A1 PCT/JP2008/066150 JP2008066150W WO2009034939A1 WO 2009034939 A1 WO2009034939 A1 WO 2009034939A1 JP 2008066150 W JP2008066150 W JP 2008066150W WO 2009034939 A1 WO2009034939 A1 WO 2009034939A1
Authority
WO
WIPO (PCT)
Prior art keywords
discharger
organic material
vaporization chamber
vaporizer
organic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/066150
Other languages
English (en)
French (fr)
Inventor
Toshio Negishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to CN2008801072211A priority Critical patent/CN101803461B/zh
Priority to EP08830039A priority patent/EP2190263B1/en
Priority to JP2009532170A priority patent/JP5374374B2/ja
Priority to KR1020107005228A priority patent/KR101128747B1/ko
Publication of WO2009034939A1 publication Critical patent/WO2009034939A1/ja
Priority to US12/718,398 priority patent/US8420169B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　成膜速度を速くしなくても均一な膜厚の薄膜を形成する。蒸発室２０ａ内に配置された蒸発装置２４を昇温させておき、供給装置４０から有機材料４８を蒸発装置２４の蒸発面２８上に落下させ、有機材料４８を蒸発させる際に、加熱したキャリアガスを蒸発室２０ａに導入し、蒸発室２０ａ内で混合して放出装置７０内に導入させる。有機材料蒸気だけが放出装置７０内に導入される場合は、放出装置７０内で分子流が形成されてしまうが、キャリアガスによって放出装置７０内の圧力が上昇しているので粘性流が形成され、混合ガスは放出装置７０内に充満し、均一に放出される。有機材料は少量ずつ供給し、成膜速度が速く成りすぎないようにするとよい。
PCT/JP2008/066150 2007-09-10 2008-09-08 有機薄膜製造方法 Ceased WO2009034939A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2008801072211A CN101803461B (zh) 2007-09-10 2008-09-08 有机薄膜制造方法
EP08830039A EP2190263B1 (en) 2007-09-10 2008-09-08 Process for producing thin organic film
JP2009532170A JP5374374B2 (ja) 2007-09-10 2008-09-08 有機薄膜製造方法
KR1020107005228A KR101128747B1 (ko) 2007-09-10 2008-09-08 유기 박막 제조 방법
US12/718,398 US8420169B2 (en) 2007-09-10 2010-03-05 Method of manufacturing organic thin film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007234441 2007-09-10
JP2007-234441 2007-09-10
JP2008043481 2008-02-25
JP2008-043481 2008-02-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/718,398 Continuation US8420169B2 (en) 2007-09-10 2010-03-05 Method of manufacturing organic thin film

Publications (1)

Publication Number Publication Date
WO2009034939A1 true WO2009034939A1 (ja) 2009-03-19

Family

ID=40451947

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066150 Ceased WO2009034939A1 (ja) 2007-09-10 2008-09-08 有機薄膜製造方法

Country Status (7)

Country Link
US (1) US8420169B2 (ja)
EP (1) EP2190263B1 (ja)
JP (1) JP5374374B2 (ja)
KR (1) KR101128747B1 (ja)
CN (1) CN101803461B (ja)
TW (1) TWI470096B (ja)
WO (1) WO2009034939A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013036060A (ja) * 2011-08-04 2013-02-21 Ulvac Japan Ltd 蒸着装置及び蒸着方法
WO2013157635A1 (ja) * 2012-04-20 2013-10-24 東京エレクトロン株式会社 ガスフロー蒸着装置、及びガスフロー蒸着方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013104127A (ja) * 2011-11-16 2013-05-30 Mitsubishi Heavy Ind Ltd 真空蒸着装置
DE102012220986B4 (de) * 2012-11-16 2015-04-02 Innovent E.V. Technologieentwicklung Dosiereinheit und ihre Verwendung
KR102150625B1 (ko) * 2013-03-15 2020-10-27 삼성디스플레이 주식회사 코팅장치
KR20160123438A (ko) * 2015-04-15 2016-10-26 삼성디스플레이 주식회사 유기 발광 디스플레이 장치용 증착원
DE102017120529A1 (de) * 2017-09-06 2019-03-07 Aixtron Se Vorrichtung zum Abscheiden einer strukturierten Schicht auf einem Substrat unter Verwendung einer Maske
CN107881485B (zh) * 2017-11-01 2019-10-01 深圳市华星光电半导体显示技术有限公司 等离子体增强化学气相沉积设备及oled面板的封装方法
US11842907B2 (en) * 2020-07-08 2023-12-12 Applied Materials, Inc. Spot heating by moving a beam with horizontal rotary motion

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10330920A (ja) * 1997-06-05 1998-12-15 Matsushita Electric Ind Co Ltd 蒸着方法および蒸着装置
JP2001308082A (ja) * 2000-04-20 2001-11-02 Nec Corp 液体有機原料の気化方法及び絶縁膜の成長方法
JP2003147529A (ja) * 2001-11-12 2003-05-21 Tohoku Ricoh Co Ltd 金属酸化物薄膜の製造方法及び製造装置
JP2003268552A (ja) * 2002-03-18 2003-09-25 Watanabe Shoko:Kk 気化器及びそれを用いた各種装置並びに気化方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337102B1 (en) 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
EP1252363B1 (de) * 2000-02-04 2003-09-10 Aixtron AG Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat
JP2004143521A (ja) * 2002-10-24 2004-05-20 Sony Corp 薄膜形成装置
JP2004204289A (ja) 2002-12-25 2004-07-22 Sony Corp 成膜装置とその方法および表示パネルの製造装置とその方法
JP2005029885A (ja) 2003-06-19 2005-02-03 Sony Corp 薄膜形成方法および薄膜形成装置並びに半導体デバイス
JP4013859B2 (ja) * 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
JP2006111920A (ja) * 2004-10-14 2006-04-27 Sony Corp 蒸着装置および蒸着方法
JP4602054B2 (ja) * 2004-11-25 2010-12-22 東京エレクトロン株式会社 蒸着装置
JP4789551B2 (ja) * 2005-09-06 2011-10-12 株式会社半導体エネルギー研究所 有機ｅｌ成膜装置
US20070098891A1 (en) * 2005-10-31 2007-05-03 Eastman Kodak Company Vapor deposition apparatus and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10330920A (ja) * 1997-06-05 1998-12-15 Matsushita Electric Ind Co Ltd 蒸着方法および蒸着装置
JP2001308082A (ja) * 2000-04-20 2001-11-02 Nec Corp 液体有機原料の気化方法及び絶縁膜の成長方法
JP2003147529A (ja) * 2001-11-12 2003-05-21 Tohoku Ricoh Co Ltd 金属酸化物薄膜の製造方法及び製造装置
JP2003268552A (ja) * 2002-03-18 2003-09-25 Watanabe Shoko:Kk 気化器及びそれを用いた各種装置並びに気化方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2190263A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013036060A (ja) * 2011-08-04 2013-02-21 Ulvac Japan Ltd 蒸着装置及び蒸着方法
WO2013157635A1 (ja) * 2012-04-20 2013-10-24 東京エレクトロン株式会社 ガスフロー蒸着装置、及びガスフロー蒸着方法

Also Published As

Publication number Publication date
US8420169B2 (en) 2013-04-16
CN101803461B (zh) 2011-12-21
EP2190263A1 (en) 2010-05-26
JP5374374B2 (ja) 2013-12-25
CN101803461A (zh) 2010-08-11
KR101128747B1 (ko) 2012-03-23
JPWO2009034939A1 (ja) 2010-12-24
TW200932929A (en) 2009-08-01
TWI470096B (zh) 2015-01-21
EP2190263A4 (en) 2011-11-09
EP2190263B1 (en) 2013-03-20
US20100178424A1 (en) 2010-07-15
KR20100053637A (ko) 2010-05-20

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