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WO2009034831A1 - 紫外線センサ - Google Patents

紫外線センサ Download PDF

Info

Publication number
WO2009034831A1
WO2009034831A1 PCT/JP2008/065147 JP2008065147W WO2009034831A1 WO 2009034831 A1 WO2009034831 A1 WO 2009034831A1 JP 2008065147 W JP2008065147 W JP 2008065147W WO 2009034831 A1 WO2009034831 A1 WO 2009034831A1
Authority
WO
WIPO (PCT)
Prior art keywords
ultraviolet
ultraviolet sensor
single crystal
type
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065147
Other languages
English (en)
French (fr)
Inventor
Kazuo Aoki
Takekazu Ujiie
Kiyoshi Shimamura
Encarnacion Antonia Garcia Villora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Koha Co Ltd
Original Assignee
National Institute for Materials Science
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Materials Science, Koha Co Ltd filed Critical National Institute for Materials Science
Publication of WO2009034831A1 publication Critical patent/WO2009034831A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

　紫外線の感度を上昇させることを可能とし、製作コストを高騰させることなく、汎用性の高い普及型の紫外線センサを提供する。 　紫外線センサ１は、ｎ型β－Ｇａ２Ｏ３単結晶基板２と、ｎ型β－Ｇａ２Ｏ３単結晶基板２が紫外線を受光して励起された電流あるいは電圧を検出する検出電極３ａ，３ｂとを備えている。
PCT/JP2008/065147 2007-09-12 2008-08-26 紫外線センサ Ceased WO2009034831A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007236278A JP2009070950A (ja) 2007-09-12 2007-09-12 紫外線センサ
JP2007-236278 2007-09-12

Publications (1)

Publication Number Publication Date
WO2009034831A1 true WO2009034831A1 (ja) 2009-03-19

Family

ID=40451842

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065147 Ceased WO2009034831A1 (ja) 2007-09-12 2008-08-26 紫外線センサ

Country Status (2)

Country Link
JP (1) JP2009070950A (ja)
WO (1) WO2009034831A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013035465A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶体のドナー濃度制御方法
WO2014132970A1 (ja) * 2013-03-01 2014-09-04 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶体のドナー濃度制御方法、及びオーミックコンタクト形成方法
WO2023190042A1 (ja) * 2022-03-30 2023-10-05 国立大学法人東北大学 積層フィルムの検査方法及び積層フィルムの製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6046377B2 (ja) 2011-08-09 2016-12-14 ローム株式会社 光検出素子、光検出装置およびオートライト装置
WO2013035842A1 (ja) 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ2Ｏ3系半導体素子
JP2014209538A (ja) * 2013-03-27 2014-11-06 日本放送協会 光電変換素子、及び、光電変換素子の製造方法
CN108767028B (zh) * 2018-05-30 2021-10-15 陈谦 基于氧化镓异质结结构的柔性日盲紫外探测器及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526096A (en) * 1975-07-04 1977-01-18 Dainippon Toryo Co Ltd Photoconductive electric material and its manufacturing method
JP2004342857A (ja) * 2003-05-15 2004-12-02 Univ Waseda Ｇａ２Ｏ３系発光素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526096A (en) * 1975-07-04 1977-01-18 Dainippon Toryo Co Ltd Photoconductive electric material and its manufacturing method
JP2004342857A (ja) * 2003-05-15 2004-12-02 Univ Waseda Ｇａ２Ｏ３系発光素子およびその製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GARCIA VILLORA ET AL.: "Epitaxial growth of .BETA.-Ga2O3", ABSTRACTS OF SPRING MEETING OF JAPAN SOCIETY OF POWDER AND POWDER METALLURGY, 2004, SHUNKI, pages 54 *
TAKAHITO OSHIMA ET AL.: "Beta-Ga2O3 Kiban o Riyo shita Shinshigai Hikari Kenshutsuki", 55TH EXTENDED ABSTRACTS,JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, vol. 3, 27 March 2008 (2008-03-27), pages 1491 *
YOSHIHIRO KOKUBUN ET AL.: "Sol-gel method ni yori Ga2O3 Tankessho Kibanjo e Sakusei shita beta-Ga2O3 Usumaku no Shigaisen Kenshutsu Tokusei", 68TH EXTENDED ABSTRACTS, THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 2, 4 September 2007 (2007-09-04), pages 666 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013035465A1 (ja) * 2011-09-08 2013-03-14 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶体のドナー濃度制御方法
US8951897B2 (en) 2011-09-08 2015-02-10 Tamura Corporation Method for controlling concentration of donor in GA2O3—based single crystal
JPWO2013035465A1 (ja) * 2011-09-08 2015-03-23 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶体のドナー濃度制御方法
EP2755231A4 (en) * 2011-09-08 2015-04-08 Tamura Seisakusho Kk METHOD OF CONTROLLING CONCENTRATION DONOR IN GA2O3 BASKET BASE
US9202876B2 (en) 2011-09-08 2015-12-01 Tamura Corporation Method for controlling concentration of donor in GA2O3-based single crystal
CN106098756A (zh) * 2011-09-08 2016-11-09 株式会社田村制作所 Ｇａ2Ｏ3系单晶体的供体浓度控制方法
WO2014132970A1 (ja) * 2013-03-01 2014-09-04 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶体のドナー濃度制御方法、及びオーミックコンタクト形成方法
JP2015026796A (ja) * 2013-03-01 2015-02-05 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶体のドナー濃度制御方法、及びオーミックコンタクト形成方法
US9611567B2 (en) 2013-03-01 2017-04-04 Tamura Corporation Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact
WO2023190042A1 (ja) * 2022-03-30 2023-10-05 国立大学法人東北大学 積層フィルムの検査方法及び積層フィルムの製造方法

Also Published As

Publication number Publication date
JP2009070950A (ja) 2009-04-02

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