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WO2009031534A1 - 半導体レーザ素子の製造方法 - Google Patents

半導体レーザ素子の製造方法 Download PDF

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Publication number
WO2009031534A1
WO2009031534A1 PCT/JP2008/065760 JP2008065760W WO2009031534A1 WO 2009031534 A1 WO2009031534 A1 WO 2009031534A1 JP 2008065760 W JP2008065760 W JP 2008065760W WO 2009031534 A1 WO2009031534 A1 WO 2009031534A1
Authority
WO
WIPO (PCT)
Prior art keywords
cut
lines
regions
starting
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065760
Other languages
English (en)
French (fr)
Inventor
Masayoshi Kumagai
Kenshi Fukumitsu
Koji Kuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to CN2008801060905A priority Critical patent/CN101796698B/zh
Priority to KR1020107002282A priority patent/KR101522746B1/ko
Priority to US12/676,666 priority patent/US8110422B2/en
Publication of WO2009031534A1 publication Critical patent/WO2009031534A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　加工対象物１に対して、切断予定ライン５ａ，５ｂに沿っての切断起点領域８ａ，８ｂの形成を予め行う。ここで、切断起点領域８ｂは、加工対象物１の内部に集光点を合わせてレーザ光を照射することにより形成される改質領域７ｂを有するものであり、しかも、切断予定ライン５ｂに沿った部分のうち、切断予定ライン５ａと交差する部分３４ｂを除いて形成される。これにより、切断起点領域８ａを起点として加工対象物１を切断する際に、切断起点領域８ｂの影響力が極めて小さくなり、精度の良い劈開面を有するバーを確実に得ることができる。従って、複数のバーのそれぞれに対して、切断予定ライン５ｂに沿っての切断起点領域の形成を行うことが不要となり、半導体レーザ素子の生産性を向上させることが可能となる。
PCT/JP2008/065760 2007-09-06 2008-09-02 半導体レーザ素子の製造方法 Ceased WO2009031534A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801060905A CN101796698B (zh) 2007-09-06 2008-09-02 半导体激光元件的制造方法
KR1020107002282A KR101522746B1 (ko) 2007-09-06 2008-09-02 반도체 레이저 소자의 제조 방법
US12/676,666 US8110422B2 (en) 2007-09-06 2008-09-02 Manufacturing method of semiconductor laser element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007231956A JP5225639B2 (ja) 2007-09-06 2007-09-06 半導体レーザ素子の製造方法
JP2007-231956 2007-09-06

Publications (1)

Publication Number Publication Date
WO2009031534A1 true WO2009031534A1 (ja) 2009-03-12

Family

ID=40428850

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065760 Ceased WO2009031534A1 (ja) 2007-09-06 2008-09-02 半導体レーザ素子の製造方法

Country Status (6)

Country Link
US (1) US8110422B2 (ja)
JP (1) JP5225639B2 (ja)
KR (1) KR101522746B1 (ja)
CN (1) CN101796698B (ja)
TW (1) TWI464986B (ja)
WO (1) WO2009031534A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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US20120135585A1 (en) * 2010-07-26 2012-05-31 Hamamatsu Photonics K.K. Method for manufacturing chip

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JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
ES2285634T3 (es) 2002-03-12 2007-11-16 Hamamatsu Photonics K. K. Metodo para dividir un siustrato.
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
EP2272618B1 (en) * 2002-03-12 2015-10-07 Hamamatsu Photonics K.K. Method of cutting object to be processed
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
EP1609559B1 (en) 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laser beam machining method
EP2324950B1 (en) * 2003-07-18 2013-11-06 Hamamatsu Photonics K.K. Semiconductor substrate to be cut with treated and minute cavity region, and method of cutting such substrate
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) * 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
CN100527360C (zh) 2004-03-30 2009-08-12 浜松光子学株式会社 激光加工方法及半导体芯片
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JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
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JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
CN101522362B (zh) * 2006-10-04 2012-11-14 浜松光子学株式会社 激光加工方法
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP5449665B2 (ja) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
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JP6957187B2 (ja) * 2017-04-18 2021-11-02 浜松ホトニクス株式会社 チップの製造方法、及び、シリコンチップ
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Also Published As

Publication number Publication date
TW200919882A (en) 2009-05-01
CN101796698B (zh) 2012-06-27
US8110422B2 (en) 2012-02-07
JP5225639B2 (ja) 2013-07-03
JP2009064983A (ja) 2009-03-26
KR101522746B1 (ko) 2015-05-26
US20100240159A1 (en) 2010-09-23
CN101796698A (zh) 2010-08-04
TWI464986B (zh) 2014-12-11
KR20100052467A (ko) 2010-05-19

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