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WO2009031525A1 - カーボンナノチューブ構造物及び薄膜トランジスタ - Google Patents

カーボンナノチューブ構造物及び薄膜トランジスタ Download PDF

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Publication number
WO2009031525A1
WO2009031525A1 PCT/JP2008/065745 JP2008065745W WO2009031525A1 WO 2009031525 A1 WO2009031525 A1 WO 2009031525A1 JP 2008065745 W JP2008065745 W JP 2008065745W WO 2009031525 A1 WO2009031525 A1 WO 2009031525A1
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotube
thin film
formation
film transistor
previously formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065745
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English (en)
French (fr)
Inventor
Hiroyuki Endoh
Satoru Toguchi
Hideaki Numata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2009531228A priority Critical patent/JP5333221B2/ja
Priority to US12/675,933 priority patent/US20100224862A1/en
Publication of WO2009031525A1 publication Critical patent/WO2009031525A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247—Finish coating of conductors by using conductive pastes, inks or powders
    • H05K3/249—Finish coating of conductors by using conductive pastes, inks or powders comprising carbon particles as main constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0242—Shape of an individual particle
    • H05K2201/026—Nanotubes or nanowires
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/254—Polymeric or resinous material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

　カーボンナノチューブ（ＣＮＴ）を用いた電子素子を作製する場合、特に先に形成された電極上にカーボンナノチューブ薄膜を形成する場合、先に形成された電極の上にＣＮＴを製膜しそのまま電子素子として利用している。この場合、カーボンナノチューブと電極が充分に接触しないと接触抵抗が大きくなり充分な素子特性が得られないという課題がある。先に形成された電極上にカーボンナノチューブ薄膜を形成する際、カーボンナノチューブの製膜前、若しくは製膜後に導電性有機高分子薄膜を形成し、接触抵抗を小さくする。
PCT/JP2008/065745 2007-09-07 2008-09-02 カーボンナノチューブ構造物及び薄膜トランジスタ Ceased WO2009031525A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009531228A JP5333221B2 (ja) 2007-09-07 2008-09-02 カーボンナノチューブ構造物及び薄膜トランジスタ
US12/675,933 US20100224862A1 (en) 2007-09-07 2008-09-02 Carbon nanotube structure and thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007232603 2007-09-07
JP2007-232603 2007-09-07

Publications (1)

Publication Number Publication Date
WO2009031525A1 true WO2009031525A1 (ja) 2009-03-12

Family

ID=40428841

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065745 Ceased WO2009031525A1 (ja) 2007-09-07 2008-09-02 カーボンナノチューブ構造物及び薄膜トランジスタ

Country Status (3)

Country Link
US (1) US20100224862A1 (ja)
JP (1) JP5333221B2 (ja)
WO (1) WO2009031525A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2018117121A (ja) * 2017-01-20 2018-07-26 ツィンファ ユニバーシティ 薄膜トランジスタ

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US20080237682A1 (en) * 2007-03-26 2008-10-02 Kuo-Ching Chiang Semiconductor memory with conductive carbon
KR101022494B1 (ko) * 2008-11-28 2011-03-16 고려대학교 산학협력단 Ｃｎｔ 박막 트랜지스터 및 이를 적용하는 디스플레이
US9051483B2 (en) * 2010-12-28 2015-06-09 Nec Corporation Carbon nanotube ink composition and a coating method thereof and a forming method of a thin film containing carbon nanotubes
US8741751B2 (en) * 2012-08-10 2014-06-03 International Business Machines Corporation Double contacts for carbon nanotubes thin film devices
US9564481B2 (en) * 2012-11-01 2017-02-07 Aneeve Llc Fully-printed carbon nanotube thin film transistor circuits for organic light emitting diode
CN103972296B (zh) * 2013-01-31 2017-10-24 清华大学 薄膜晶体管
CN104103696B (zh) * 2013-04-15 2018-02-27 清华大学 双极性薄膜晶体管
WO2017171736A1 (en) * 2016-03-30 2017-10-05 Intel Corporation Nanowire for transistor integration
WO2018068170A1 (en) * 2016-10-10 2018-04-19 Boe Technology Group Co., Ltd. Thin film transistor, display panel and display apparatus having the same, and fabricating method thereof
CN110034007B (zh) * 2018-01-12 2021-07-09 东北师范大学 一种实现透明可拉伸电极超高精度图案化的方法

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JPWO2005122233A1 (ja) * 2004-06-10 2008-04-10 国立大学法人山梨大学 ショットキーゲート有機電界効果トランジスタおよびその製造方法
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KR100770258B1 (ko) * 2005-04-22 2007-10-25 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조 방법
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WO2006124055A2 (en) * 2004-10-12 2006-11-23 Nanosys, Inc. Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
JP2006351613A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd 電界効果トランジスタ、その製造方法および電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018117121A (ja) * 2017-01-20 2018-07-26 ツィンファ ユニバーシティ 薄膜トランジスタ

Also Published As

Publication number Publication date
JP5333221B2 (ja) 2013-11-06
JPWO2009031525A1 (ja) 2010-12-16
US20100224862A1 (en) 2010-09-09

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