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WO2009031358A1 - 圧電共振子 - Google Patents

圧電共振子 Download PDF

Info

Publication number
WO2009031358A1
WO2009031358A1 PCT/JP2008/062464 JP2008062464W WO2009031358A1 WO 2009031358 A1 WO2009031358 A1 WO 2009031358A1 JP 2008062464 W JP2008062464 W JP 2008062464W WO 2009031358 A1 WO2009031358 A1 WO 2009031358A1
Authority
WO
WIPO (PCT)
Prior art keywords
acoustic impedance
layers
impedance layers
low
piezoelectric resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062464
Other languages
English (en)
French (fr)
Inventor
Keiichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40428681&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2009031358(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to DE112008002283.6T priority Critical patent/DE112008002283B4/de
Priority to JP2009531158A priority patent/JP4930595B2/ja
Publication of WO2009031358A1 publication Critical patent/WO2009031358A1/ja
Priority to US12/714,597 priority patent/US7868519B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

　品質が安定し、共振特性を改善することができる圧電共振子を提供する。 　一対の電極１５，１７の間に圧電薄膜１６が挟まれた振動部２と基板１２との間に配置された音響反射器部４は、（ａ）交互に配置され、音響インピーダンスが相対的に低い材料からなる複数の低音響インピーダンス層３０，３２，３４及び音響インピーダンスが相対的に高い材料からなる複数の高音響インピーダンス層２０，２２と、（ｂ）高音響インピーダンス層２０，２２とその基板１２側の低音響インピーダンス層３０，３２との間に配置され、音響インピーダンスが高音響インピーダンス層２０，２２と低音響インピーダンス層３０，３２の中間の値である調整層１３ｓ，１３ｔとを含む。低音響インピーダンス層３０，３２，３４と高音響インピーダンス層２０，２２とは圧縮応力を有し、調整層１３ｓ，１３ｙは引張応力を有する。
PCT/JP2008/062464 2007-09-06 2008-07-10 圧電共振子 Ceased WO2009031358A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112008002283.6T DE112008002283B4 (de) 2007-09-06 2008-07-10 Piezoelektrischer Resonator
JP2009531158A JP4930595B2 (ja) 2007-09-06 2008-07-10 圧電共振子
US12/714,597 US7868519B2 (en) 2007-09-06 2010-03-01 Piezoelectric resonator including an acoustic reflector portion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007231854 2007-09-06
JP2007-231854 2007-09-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/714,597 Continuation US7868519B2 (en) 2007-09-06 2010-03-01 Piezoelectric resonator including an acoustic reflector portion

Publications (1)

Publication Number Publication Date
WO2009031358A1 true WO2009031358A1 (ja) 2009-03-12

Family

ID=40428681

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062464 Ceased WO2009031358A1 (ja) 2007-09-06 2008-07-10 圧電共振子

Country Status (4)

Country Link
US (1) US7868519B2 (ja)
JP (1) JP4930595B2 (ja)
DE (1) DE112008002283B4 (ja)
WO (1) WO2009031358A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2306641A3 (fr) * 2009-10-01 2011-08-03 STmicroelectronics SA Procédé de fabrication de résonateur BAW à facteur de qualité élevé
CN109314503A (zh) * 2016-06-07 2019-02-05 株式会社村田制作所 弹性波装置及其制造方法

Families Citing this family (149)

* Cited by examiner, † Cited by third party
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FR2951026B1 (fr) 2009-10-01 2011-12-02 St Microelectronics Sa Procede de fabrication de resonateurs baw sur une tranche semiconductrice
FR2951023B1 (fr) * 2009-10-01 2012-03-09 St Microelectronics Sa Procede de fabrication d'oscillateurs monolithiques a resonateurs baw
US9634642B2 (en) 2014-05-30 2017-04-25 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising vertically extended acoustic cavity
WO2016147688A1 (ja) * 2015-03-16 2016-09-22 株式会社村田製作所 弾性波装置及びその製造方法
CN108028637B (zh) 2015-10-23 2021-05-11 株式会社村田制作所 弹性波装置
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DE102018107489B4 (de) * 2018-03-28 2019-12-05 RF360 Europe GmbH BAW-Resonator mit verbesserter Kopplung, HF-Filter, das einen BAW-Resonator umfasst, und Verfahren zum Herstellen eines BAW-Resonators
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DE112008002283B4 (de) 2018-01-04
US20100148638A1 (en) 2010-06-17
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US7868519B2 (en) 2011-01-11
JP4930595B2 (ja) 2012-05-16

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