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FR2951023B1 - Procede de fabrication d'oscillateurs monolithiques a resonateurs baw - Google Patents

Procede de fabrication d'oscillateurs monolithiques a resonateurs baw

Info

Publication number
FR2951023B1
FR2951023B1 FR0956849A FR0956849A FR2951023B1 FR 2951023 B1 FR2951023 B1 FR 2951023B1 FR 0956849 A FR0956849 A FR 0956849A FR 0956849 A FR0956849 A FR 0956849A FR 2951023 B1 FR2951023 B1 FR 2951023B1
Authority
FR
France
Prior art keywords
baw resonators
manufacturing monolithic
oscillators
monolithic oscillators
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0956849A
Other languages
English (en)
Other versions
FR2951023A1 (fr
Inventor
Pierre Bar
Sylvain Joblot
Jean-Francois Carpentier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0956849A priority Critical patent/FR2951023B1/fr
Priority to US12/896,394 priority patent/US8397360B2/en
Publication of FR2951023A1 publication Critical patent/FR2951023A1/fr
Application granted granted Critical
Publication of FR2951023B1 publication Critical patent/FR2951023B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/4908—Acoustic transducer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR0956849A 2009-10-01 2009-10-01 Procede de fabrication d'oscillateurs monolithiques a resonateurs baw Expired - Fee Related FR2951023B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0956849A FR2951023B1 (fr) 2009-10-01 2009-10-01 Procede de fabrication d'oscillateurs monolithiques a resonateurs baw
US12/896,394 US8397360B2 (en) 2009-10-01 2010-10-01 Method for manufacturing a monolithic oscillator with bulk acoustic wave (BAW) resonators

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0956849A FR2951023B1 (fr) 2009-10-01 2009-10-01 Procede de fabrication d'oscillateurs monolithiques a resonateurs baw

Publications (2)

Publication Number Publication Date
FR2951023A1 FR2951023A1 (fr) 2011-04-08
FR2951023B1 true FR2951023B1 (fr) 2012-03-09

Family

ID=42189090

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0956849A Expired - Fee Related FR2951023B1 (fr) 2009-10-01 2009-10-01 Procede de fabrication d'oscillateurs monolithiques a resonateurs baw

Country Status (2)

Country Link
US (1) US8397360B2 (fr)
FR (1) FR2951023B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8756778B2 (en) * 2009-10-01 2014-06-24 Stmicroelectronics Sa Method of adjustment during manufacture of a circuit having a capacitor
US9246467B2 (en) 2012-05-31 2016-01-26 Texas Instruments Incorporated Integrated resonator with a mass bias
US9503047B2 (en) 2014-05-01 2016-11-22 Texas Instruments Incorporated Bulk acoustic wave (BAW) device having roughened bottom side
CN105866815B (zh) * 2016-05-06 2018-12-28 中国工程物理研究院电子工程研究所 一种柔性结构的fbar伽马辐照传感器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158805A (en) * 1978-01-19 1979-06-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for testing crystal elements
US5864261A (en) 1994-05-23 1999-01-26 Iowa State University Research Foundation Multiple layer acoustical structures for thin-film resonator based circuits and systems
US6297704B1 (en) * 1999-09-30 2001-10-02 Nortel Networks Corporation Oscillation circuits featuring coaxial resonators
US6342134B1 (en) 2000-02-11 2002-01-29 Agere Systems Guardian Corp. Method for producing piezoelectric films with rotating magnetron sputtering system
JP3889351B2 (ja) 2002-12-11 2007-03-07 Ｔｄｋ株式会社 デュプレクサ
EP1489740A3 (fr) * 2003-06-18 2006-06-28 Matsushita Electric Industrial Co., Ltd. Composant électronique et procédé de fabrication de celui-ci
JP4321754B2 (ja) 2003-07-31 2009-08-26 Ｔｄｋ株式会社 圧電共振器およびそれを用いたフィルタ
JP2005117641A (ja) 2003-09-17 2005-04-28 Matsushita Electric Ind Co Ltd 圧電体共振器、それを用いたフィルタ及び共用器
US7400217B2 (en) 2003-10-30 2008-07-15 Avago Technologies Wireless Ip Pte Ltd Decoupled stacked bulk acoustic resonator band-pass filter with controllable pass bandwith
JP2005311849A (ja) 2004-04-23 2005-11-04 Seiko Epson Corp 圧電薄膜共振子、フィルタ及び圧電薄膜共振子の製造方法
JP2006229282A (ja) 2005-02-15 2006-08-31 Kyocera Corp 薄膜バルク音響波共振子およびフィルタならびに通信装置
JP2006352619A (ja) 2005-06-17 2006-12-28 Toko Inc 圧電薄膜共振子
FR2888663B1 (fr) 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant
CN101228691B (zh) 2005-08-30 2011-01-05 松下电器产业株式会社 压电谐振器的制造方法
US7760049B2 (en) 2006-05-30 2010-07-20 Panasonic Corporation Film bulk acoustic resonator, filter, and fabrication method thereof
JPWO2009013938A1 (ja) 2007-07-20 2010-09-30 株式会社村田製作所 圧電共振子及び圧電フィルタ装置
WO2009023098A2 (fr) 2007-08-14 2009-02-19 Skyworks Solutions, Inc. Structure d'ondes acoustiques de volume comportant une couche piézoélectrique de nitrure de cuivre-aluminium et procédé associé à cette structure
WO2009031358A1 (fr) 2007-09-06 2009-03-12 Murata Manufacturing Co., Ltd. Résonateur piézoélectrique
US8253513B2 (en) 2010-03-16 2012-08-28 Hao Zhang Temperature compensated thin film acoustic wave resonator

Also Published As

Publication number Publication date
FR2951023A1 (fr) 2011-04-08
US8397360B2 (en) 2013-03-19
US20110078894A1 (en) 2011-04-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150630