WO2009028189A1 - ソリッドステートリレー - Google Patents
ソリッドステートリレー Download PDFInfo
- Publication number
- WO2009028189A1 WO2009028189A1 PCT/JP2008/002338 JP2008002338W WO2009028189A1 WO 2009028189 A1 WO2009028189 A1 WO 2009028189A1 JP 2008002338 W JP2008002338 W JP 2008002338W WO 2009028189 A1 WO2009028189 A1 WO 2009028189A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solid state
- state relay
- resistor
- connection point
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Electronic Switches (AREA)
Abstract
【課題】コストの上昇を抑制すると共に、異常動作を防止し、且つスナバ回路の抵抗近傍部品が故障してしまうことを防止することが可能なソリッドステートリレーを提供する。 【解決手段】ソリッドステートリレー20は、スナバ回路Sを構成するコンデンサC0と抵抗R0との接続点dと、トライアックTAのゲート端子Gとを接続する第3接続ライン28cを備えている。さらに、ソリッドステートリレー20は、第3接続ライン28c上に設けられた抵抗R2と、接続点eと接続点bとの間に設けられたコンデンサCとを備えている。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007225159A JP5042749B2 (ja) | 2007-08-31 | 2007-08-31 | ソリッドステートリレー |
| JP2007-225159 | 2007-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009028189A1 true WO2009028189A1 (ja) | 2009-03-05 |
Family
ID=40386928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/002338 Ceased WO2009028189A1 (ja) | 2007-08-31 | 2008-08-28 | ソリッドステートリレー |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5042749B2 (ja) |
| MY (1) | MY158879A (ja) |
| WO (1) | WO2009028189A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104079280B (zh) * | 2014-07-03 | 2018-02-02 | 库顿电子科技(厦门)有限公司 | 一种高耐压的固态继电器 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5794113B2 (ja) | 2011-11-04 | 2015-10-14 | オムロン株式会社 | ソリッドステートリレー及び負荷駆動回路 |
| KR20150072789A (ko) * | 2013-12-20 | 2015-06-30 | 삼성전기주식회사 | 전원 공급 장치, 복합 전자부품 및 그 실장 기판 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0194715A (ja) * | 1987-10-07 | 1989-04-13 | Hitachi Ltd | ソリツドステートリレー |
| JPH01319328A (ja) * | 1988-06-20 | 1989-12-25 | Omron Tateisi Electron Co | ソリッドステートリレー |
| JPH0715307A (ja) * | 1993-06-15 | 1995-01-17 | Matsushita Electric Works Ltd | ソリッドステートリレー |
-
2007
- 2007-08-31 JP JP2007225159A patent/JP5042749B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-28 MY MYPI2010000867A patent/MY158879A/en unknown
- 2008-08-28 WO PCT/JP2008/002338 patent/WO2009028189A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0194715A (ja) * | 1987-10-07 | 1989-04-13 | Hitachi Ltd | ソリツドステートリレー |
| JPH01319328A (ja) * | 1988-06-20 | 1989-12-25 | Omron Tateisi Electron Co | ソリッドステートリレー |
| JPH0715307A (ja) * | 1993-06-15 | 1995-01-17 | Matsushita Electric Works Ltd | ソリッドステートリレー |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104079280B (zh) * | 2014-07-03 | 2018-02-02 | 库顿电子科技(厦门)有限公司 | 一种高耐压的固态继电器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009060322A (ja) | 2009-03-19 |
| JP5042749B2 (ja) | 2012-10-03 |
| MY158879A (en) | 2016-11-30 |
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Legal Events
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| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
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