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WO2009028189A1 - Relais à semi-conducteurs - Google Patents

Relais à semi-conducteurs Download PDF

Info

Publication number
WO2009028189A1
WO2009028189A1 PCT/JP2008/002338 JP2008002338W WO2009028189A1 WO 2009028189 A1 WO2009028189 A1 WO 2009028189A1 JP 2008002338 W JP2008002338 W JP 2008002338W WO 2009028189 A1 WO2009028189 A1 WO 2009028189A1
Authority
WO
WIPO (PCT)
Prior art keywords
solid state
state relay
resistor
connection point
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002338
Other languages
English (en)
Japanese (ja)
Inventor
Masami Uehara
Chin Chye Yong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TKR Corp
Original Assignee
TKR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TKR Corp filed Critical TKR Corp
Publication of WO2009028189A1 publication Critical patent/WO2009028189A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Electronic Switches (AREA)

Abstract

L'invention vise à proposer un relais à semi-conducteurs qui peut supprimer une augmentation des coûts, empêcher un fonctionnement anormal, et empêcher une défaillance de parties associées à une résistance d'un circuit d'amortissement. A cet effet, l'invention porte sur un relais à semi-conducteurs (20) qui comprend une troisième ligne de connexion (28c) qui connecte un point de connexion d entre un condensateur C0 et une résistance R0 constituant un circuit d'amortissement S à une borne de gâchette G d'un triac TA. De plus, le relais à semi-conducteurs (20) comprend une résistance R2 disposée sur la troisième ligne de connexion (28c) et un condensateur C disposé entre un point de connexion e et un point de connexion b.
PCT/JP2008/002338 2007-08-31 2008-08-28 Relais à semi-conducteurs Ceased WO2009028189A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007225159A JP5042749B2 (ja) 2007-08-31 2007-08-31 ソリッドステートリレー
JP2007-225159 2007-08-31

Publications (1)

Publication Number Publication Date
WO2009028189A1 true WO2009028189A1 (fr) 2009-03-05

Family

ID=40386928

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002338 Ceased WO2009028189A1 (fr) 2007-08-31 2008-08-28 Relais à semi-conducteurs

Country Status (3)

Country Link
JP (1) JP5042749B2 (fr)
MY (1) MY158879A (fr)
WO (1) WO2009028189A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104079280B (zh) * 2014-07-03 2018-02-02 库顿电子科技（厦门）有限公司 一种高耐压的固态继电器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5794113B2 (ja) 2011-11-04 2015-10-14 オムロン株式会社 ソリッドステートリレー及び負荷駆動回路
KR20150072789A (ko) * 2013-12-20 2015-06-30 삼성전기주식회사 전원 공급 장치, 복합 전자부품 및 그 실장 기판

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0194715A (ja) * 1987-10-07 1989-04-13 Hitachi Ltd ソリツドステートリレー
JPH01319328A (ja) * 1988-06-20 1989-12-25 Omron Tateisi Electron Co ソリッドステートリレー
JPH0715307A (ja) * 1993-06-15 1995-01-17 Matsushita Electric Works Ltd ソリッドステートリレー

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0194715A (ja) * 1987-10-07 1989-04-13 Hitachi Ltd ソリツドステートリレー
JPH01319328A (ja) * 1988-06-20 1989-12-25 Omron Tateisi Electron Co ソリッドステートリレー
JPH0715307A (ja) * 1993-06-15 1995-01-17 Matsushita Electric Works Ltd ソリッドステートリレー

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104079280B (zh) * 2014-07-03 2018-02-02 库顿电子科技（厦门）有限公司 一种高耐压的固态继电器

Also Published As

Publication number Publication date
JP2009060322A (ja) 2009-03-19
JP5042749B2 (ja) 2012-10-03
MY158879A (en) 2016-11-30

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