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WO2009022498A1 - 電子部品の製造方法 - Google Patents

電子部品の製造方法 Download PDF

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Publication number
WO2009022498A1
WO2009022498A1 PCT/JP2008/061708 JP2008061708W WO2009022498A1 WO 2009022498 A1 WO2009022498 A1 WO 2009022498A1 JP 2008061708 W JP2008061708 W JP 2008061708W WO 2009022498 A1 WO2009022498 A1 WO 2009022498A1
Authority
WO
WIPO (PCT)
Prior art keywords
frame
functional section
layer
sealing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061708
Other languages
English (en)
French (fr)
Inventor
Hiroki Horiguchi
Yuji Kimura
Kazuhiro Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2009528053A priority Critical patent/JP5088373B2/ja
Publication of WO2009022498A1 publication Critical patent/WO2009022498A1/ja
Priority to US12/702,553 priority patent/US8002942B2/en
Anticipated expiration legal-status Critical
Priority to US13/183,511 priority patent/US8382934B2/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

　機械的動作可能な機能部が配置された基板に蓋を接合して、機能部を封止した構造を有する、３軸加速度センサにおいて、機能部の変位を阻害しないような接合状態を確実に得ることができるようにする。 　機能部（７）が配置された基板（２）の上方主面側の周囲に加熱されたポリイミドからなる封止枠（１１）を形成し、蓋（１２）の下方主面の全面にわたってポリイミドからなる封止層（１３）を形成する。機能部を封止するように基板と蓋とを一体化させるため、封止枠と封止層とを、互いに接触させながらポリイミドのガラス転移点より５０～１５０°C高い温度で加熱しかつ加圧することによって、互いに接合する。このとき、封止層（１３）の、封止枠（１１）と接触すべき部分の近傍に凹部（１７）を形成しておき、接合工程において変形した封止層（１３）から生じる盛り上がり（２０）が機能部（１７）の方向に向かわないようにする。
PCT/JP2008/061708 2007-08-10 2008-06-27 電子部品の製造方法 Ceased WO2009022498A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009528053A JP5088373B2 (ja) 2007-08-10 2008-06-27 電子部品の製造方法
US12/702,553 US8002942B2 (en) 2007-08-10 2010-02-09 Method for manufacturing electronic component
US13/183,511 US8382934B2 (en) 2007-08-10 2011-07-15 Method for manufacturing electronic component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-208760 2007-08-10
JP2007208760 2007-08-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/702,553 Continuation US8002942B2 (en) 2007-08-10 2010-02-09 Method for manufacturing electronic component

Publications (1)

Publication Number Publication Date
WO2009022498A1 true WO2009022498A1 (ja) 2009-02-19

Family

ID=40350554

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061708 Ceased WO2009022498A1 (ja) 2007-08-10 2008-06-27 電子部品の製造方法

Country Status (3)

Country Link
US (2) US8002942B2 (ja)
JP (1) JP5088373B2 (ja)
WO (1) WO2009022498A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100272513A1 (en) * 2009-04-22 2010-10-28 Courtney William J Method of manufacturing a tubing for a subsurface water drainage system
EP2259018A1 (en) * 2009-05-29 2010-12-08 Infineon Technologies AG Gap control for die or layer bonding using intermediate layers
JP2010281776A (ja) * 2009-06-08 2010-12-16 Dainippon Printing Co Ltd 力学量センサ、力学量センサの製造方法及び力学量センサを用いた電子機器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130016607A (ko) * 2011-08-08 2013-02-18 삼성전기주식회사 관성센서 및 그 제조방법
JP5673850B2 (ja) * 2012-04-23 2015-02-18 株式会社村田製作所 水晶振動装置及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118191A (ja) * 2000-10-10 2002-04-19 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2002231920A (ja) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
WO2006040986A1 (ja) * 2004-10-13 2006-04-20 Sumitomo Bakelite Co., Ltd. 受光装置
JP2007189032A (ja) * 2006-01-12 2007-07-26 Nippon Steel Chem Co Ltd 中空封止型半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278429A (en) * 1989-12-19 1994-01-11 Fujitsu Limited Semiconductor device having improved adhesive structure and method of producing same
SE513801C2 (sv) * 1999-02-18 2000-11-06 Ericsson Telefon Ab L M Metod att sammanfoga två element samt element av plastmaterial
US7604706B2 (en) * 2001-03-30 2009-10-20 Minolta Co., Ltd. Method for producing resin-molded substrate and method for producing reversible image display medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118191A (ja) * 2000-10-10 2002-04-19 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2002231920A (ja) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
WO2006040986A1 (ja) * 2004-10-13 2006-04-20 Sumitomo Bakelite Co., Ltd. 受光装置
JP2007189032A (ja) * 2006-01-12 2007-07-26 Nippon Steel Chem Co Ltd 中空封止型半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100272513A1 (en) * 2009-04-22 2010-10-28 Courtney William J Method of manufacturing a tubing for a subsurface water drainage system
US8518201B2 (en) * 2009-04-22 2013-08-27 Midwest Diversified Technologies, Inc. Method of manufacturing a tubing for a subsurface water drainage system
EP2259018A1 (en) * 2009-05-29 2010-12-08 Infineon Technologies AG Gap control for die or layer bonding using intermediate layers
US8421169B2 (en) 2009-05-29 2013-04-16 Infineon Technologies Ag Gap control for die or layer bonding using intermediate layers
JP2010281776A (ja) * 2009-06-08 2010-12-16 Dainippon Printing Co Ltd 力学量センサ、力学量センサの製造方法及び力学量センサを用いた電子機器

Also Published As

Publication number Publication date
US8382934B2 (en) 2013-02-26
US8002942B2 (en) 2011-08-23
US20100132185A1 (en) 2010-06-03
JP5088373B2 (ja) 2012-12-05
US20110265929A1 (en) 2011-11-03
JPWO2009022498A1 (ja) 2010-11-11

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