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WO2009014144A1 - Semiconductor substrate manufacturing method - Google Patents

Semiconductor substrate manufacturing method Download PDF

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Publication number
WO2009014144A1
WO2009014144A1 PCT/JP2008/063198 JP2008063198W WO2009014144A1 WO 2009014144 A1 WO2009014144 A1 WO 2009014144A1 JP 2008063198 W JP2008063198 W JP 2008063198W WO 2009014144 A1 WO2009014144 A1 WO 2009014144A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
cleaning
treatment
drying
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063198
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroyuki Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2009524497A priority Critical patent/JP4947393B2/en
Publication of WO2009014144A1 publication Critical patent/WO2009014144A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Provided is a semiconductor substrate manufacturing method wherein adhesion of heavy metals such as Fe, Ni, Cr and Cu and adhesion of particles are eliminated and generation of liquid contamination is also eliminated. The semiconductor substrate manufacturing method includes a step of forming an oxide film over the entire surface of a semiconductor substrate; a step of coating an oxide film on the rear surface and the side surface of the semiconductor substrate with a resist film; a cleaning step of cleaning the semiconductor substrate; and a step of growing an epitaxial layer by vapor phase epitaxy on the front surface of the semiconductor substrate after the cleaning step. The cleaning step includes a treatment of removing the semiconductor substrate front surface oxide film by using buffered hydrofluoric acid added with a surfactant, a treatment of removing the semiconductor substrate rear surface resist film by sulfuric acid hydrogen peroxide cleaning without drying the semiconductor substrate, a treatment of cleaning the semiconductor substrate by SC-1 cleaning without drying the semiconductor substrate, and a treatment of drying the semiconductor substrate.
PCT/JP2008/063198 2007-07-24 2008-07-23 Semiconductor substrate manufacturing method Ceased WO2009014144A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009524497A JP4947393B2 (en) 2007-07-24 2008-07-23 Manufacturing method of semiconductor substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-192235 2007-07-24
JP2007192235 2007-07-24

Publications (1)

Publication Number Publication Date
WO2009014144A1 true WO2009014144A1 (en) 2009-01-29

Family

ID=40281393

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063198 Ceased WO2009014144A1 (en) 2007-07-24 2008-07-23 Semiconductor substrate manufacturing method

Country Status (2)

Country Link
JP (1) JP4947393B2 (en)
WO (1) WO2009014144A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831088B2 (en) 2010-10-06 2017-11-28 Entegris, Inc. Composition and process for selectively etching metal nitrides

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895819A (en) * 1981-12-02 1983-06-07 Toshiba Corp Semiconductor wafer
JPH0737796A (en) * 1993-07-17 1995-02-07 Shin Etsu Handotai Co Ltd Manufacture of semiconductor substrate and its device
JPH08264500A (en) * 1995-03-27 1996-10-11 Sony Corp Substrate cleaning method
JPH1187281A (en) * 1997-09-08 1999-03-30 Shin Etsu Handotai Co Ltd Cleaning of silicon wafer
WO2005095567A1 (en) * 2004-03-03 2005-10-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895819A (en) * 1981-12-02 1983-06-07 Toshiba Corp Semiconductor wafer
JPH0737796A (en) * 1993-07-17 1995-02-07 Shin Etsu Handotai Co Ltd Manufacture of semiconductor substrate and its device
JPH08264500A (en) * 1995-03-27 1996-10-11 Sony Corp Substrate cleaning method
JPH1187281A (en) * 1997-09-08 1999-03-30 Shin Etsu Handotai Co Ltd Cleaning of silicon wafer
WO2005095567A1 (en) * 2004-03-03 2005-10-13 3M Innovative Properties Company Fluorinated sulfonamide surfactants for aqueous cleaning solutions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9831088B2 (en) 2010-10-06 2017-11-28 Entegris, Inc. Composition and process for selectively etching metal nitrides

Also Published As

Publication number Publication date
JPWO2009014144A1 (en) 2010-10-07
JP4947393B2 (en) 2012-06-06

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