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WO2009005143A1 - 金属膜用研磨液及び研磨方法 - Google Patents

金属膜用研磨液及び研磨方法 Download PDF

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Publication number
WO2009005143A1
WO2009005143A1 PCT/JP2008/062159 JP2008062159W WO2009005143A1 WO 2009005143 A1 WO2009005143 A1 WO 2009005143A1 JP 2008062159 W JP2008062159 W JP 2008062159W WO 2009005143 A1 WO2009005143 A1 WO 2009005143A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing liquid
metal film
liquid
metal films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/062159
Other languages
English (en)
French (fr)
Inventor
Takaaki Tanaka
Masato Fukasawa
Shigeru Nobe
Takafumi Sakurada
Takashi Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2009521676A priority Critical patent/JP5287720B2/ja
Priority to US12/667,154 priority patent/US8609541B2/en
Priority to CN2008800233324A priority patent/CN101689494B/zh
Priority to KR1020107000003A priority patent/KR101318102B1/ko
Priority to KR1020137013121A priority patent/KR101396055B1/ko
Publication of WO2009005143A1 publication Critical patent/WO2009005143A1/ja
Anticipated expiration legal-status Critical
Priority to US14/079,152 priority patent/US8901002B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　エロージョン及びシームの発生を抑制し、被研磨面の平坦性が高い金属膜用研磨液及び研磨方法を提供する。砥粒、メタクリル酸系ポリマ及び水を含有することを特徴とする金属膜用研磨液及びそれを用いる研磨方法。
PCT/JP2008/062159 2007-07-05 2008-07-04 金属膜用研磨液及び研磨方法 Ceased WO2009005143A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009521676A JP5287720B2 (ja) 2007-07-05 2008-07-04 金属膜用研磨液及び研磨方法
US12/667,154 US8609541B2 (en) 2007-07-05 2008-07-04 Polishing slurry for metal films and polishing method
CN2008800233324A CN101689494B (zh) 2007-07-05 2008-07-04 金属膜用研磨液及研磨方法
KR1020107000003A KR101318102B1 (ko) 2007-07-05 2008-07-04 금속막용 연마액 및 연마방법
KR1020137013121A KR101396055B1 (ko) 2007-07-05 2008-07-04 금속막용 연마액 및 연마방법
US14/079,152 US8901002B2 (en) 2007-07-05 2013-11-13 Polishing slurry for metal films and polishing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-177182 2007-07-05
JP2007177182 2007-07-05

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/667,154 A-371-Of-International US8609541B2 (en) 2007-07-05 2008-07-04 Polishing slurry for metal films and polishing method
US14/079,152 Division US8901002B2 (en) 2007-07-05 2013-11-13 Polishing slurry for metal films and polishing method

Publications (1)

Publication Number Publication Date
WO2009005143A1 true WO2009005143A1 (ja) 2009-01-08

Family

ID=40226181

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062159 Ceased WO2009005143A1 (ja) 2007-07-05 2008-07-04 金属膜用研磨液及び研磨方法

Country Status (7)

Country Link
US (2) US8609541B2 (ja)
JP (3) JP5287720B2 (ja)
KR (2) KR101396055B1 (ja)
CN (2) CN101689494B (ja)
SG (1) SG182993A1 (ja)
TW (2) TWI525680B (ja)
WO (1) WO2009005143A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010188514A (ja) * 2009-01-20 2010-09-02 Kao Corp 磁気ディスク基板用研磨液組成物
WO2011030706A1 (ja) * 2009-09-08 2011-03-17 東亞合成株式会社 シリカ粒子又はセリア粒子用分散剤及び研磨剤
JP2011098323A (ja) * 2009-11-09 2011-05-19 Toagosei Co Ltd アルミナ粒子用分散剤
WO2012169515A1 (ja) * 2011-06-08 2012-12-13 株式会社 フジミインコーポレーテッド 研磨材及び研磨用組成物
KR20140039260A (ko) 2011-06-14 2014-04-01 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
WO2015108113A1 (ja) * 2014-01-16 2015-07-23 日立化成株式会社 研磨液の製造方法及び研磨方法
JP2015203080A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
US9299573B2 (en) 2012-03-14 2016-03-29 Hitachi Chemical Company, Ltd. Polishing method

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* Cited by examiner, † Cited by third party
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SG182993A1 (en) * 2007-07-05 2012-08-30 Hitachi Chemical Co Ltd Polishing slurry for metal films and polishing method
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP6132315B2 (ja) * 2012-04-18 2017-05-24 株式会社フジミインコーポレーテッド 研磨用組成物
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
JP2017122134A (ja) * 2014-05-22 2017-07-13 日立化成株式会社 金属膜用研磨液及びそれを用いた研磨方法
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
US20170216993A1 (en) * 2014-08-07 2017-08-03 Fujimi Incorporated Composition for polishing titanium alloy material
KR102321209B1 (ko) * 2014-11-03 2021-11-02 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN105048103A (zh) * 2015-06-25 2015-11-11 电子科技大学 一种用于吸收太赫兹波的超薄金属膜的制备方法
JP6592998B2 (ja) * 2015-07-10 2019-10-23 日立化成株式会社 タングステン用研磨剤、研磨剤用貯蔵液及び研磨方法
KR102628333B1 (ko) * 2015-09-09 2024-01-22 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 기체의 연마 방법
TWI601198B (zh) * 2016-03-01 2017-10-01 羅門哈斯電子材料Ｃｍｐ控股公司 化學機械研磨基板之方法
KR20180117609A (ko) 2016-03-01 2018-10-29 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 기판의 화학 기계적 연마 방법
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
US10692732B2 (en) * 2018-09-21 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. CMP slurry and CMP method
US11814734B2 (en) * 2019-05-13 2023-11-14 Ecolab Usa Inc. 1,2,4-triazolo[1,5-a] pyrimidine derivative as copper corrosion inhibitor
CN119927788B (zh) * 2025-04-08 2025-08-01 河北同光半导体股份有限公司 晶圆的研磨抛光加工方法

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010188514A (ja) * 2009-01-20 2010-09-02 Kao Corp 磁気ディスク基板用研磨液組成物
WO2011030706A1 (ja) * 2009-09-08 2011-03-17 東亞合成株式会社 シリカ粒子又はセリア粒子用分散剤及び研磨剤
JP5605367B2 (ja) * 2009-09-08 2014-10-15 東亞合成株式会社 シリカ粒子又はセリア粒子用分散剤及び研磨剤
JP2011098323A (ja) * 2009-11-09 2011-05-19 Toagosei Co Ltd アルミナ粒子用分散剤
WO2012169515A1 (ja) * 2011-06-08 2012-12-13 株式会社 フジミインコーポレーテッド 研磨材及び研磨用組成物
CN103596727A (zh) * 2011-06-08 2014-02-19 福吉米株式会社 研磨材料和研磨用组合物
JPWO2012169515A1 (ja) * 2011-06-08 2015-02-23 株式会社フジミインコーポレーテッド 研磨材及び研磨用組成物
KR20140039260A (ko) 2011-06-14 2014-04-01 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
US9640407B2 (en) 2011-06-14 2017-05-02 Fujimi Incorporated Polishing composition
US9299573B2 (en) 2012-03-14 2016-03-29 Hitachi Chemical Company, Ltd. Polishing method
WO2015108113A1 (ja) * 2014-01-16 2015-07-23 日立化成株式会社 研磨液の製造方法及び研磨方法
JP2015203080A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
CN102352187B (zh) 2015-03-18
US20110009033A1 (en) 2011-01-13
TWI419218B (zh) 2013-12-11
KR20100031530A (ko) 2010-03-22
TW200913039A (en) 2009-03-16
KR20130060375A (ko) 2013-06-07
JP5741738B2 (ja) 2015-07-01
JP5626307B2 (ja) 2014-11-19
SG182993A1 (en) 2012-08-30
KR101396055B1 (ko) 2014-05-15
KR101318102B1 (ko) 2013-10-15
US8609541B2 (en) 2013-12-17
JP5287720B2 (ja) 2013-09-11
US20140065826A1 (en) 2014-03-06
TWI525680B (zh) 2016-03-11
JPWO2009005143A1 (ja) 2010-08-26
JP2014160827A (ja) 2014-09-04
CN101689494A (zh) 2010-03-31
CN101689494B (zh) 2013-09-25
JP2013062516A (ja) 2013-04-04
US8901002B2 (en) 2014-12-02
TW201419395A (zh) 2014-05-16
CN102352187A (zh) 2012-02-15

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