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SG10201904669TA - Polishing Slurry Composition - Google Patents

Polishing Slurry Composition

Info

Publication number
SG10201904669TA
SG10201904669TA SG10201904669TA SG10201904669TA SG10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA
Authority
SG
Singapore
Prior art keywords
slurry composition
polishing slurry
polishing
composition
slurry
Prior art date
Application number
SG10201904669TA
Inventor
Hyungoo Kong
Jinsook Hwang
Sangmi Lee
Inseol Hwang
Nara Shin
Original Assignee
Kctech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020180074567A external-priority patent/KR20200001724A/en
Priority claimed from KR1020180137610A external-priority patent/KR102442600B1/en
Application filed by Kctech Co Ltd filed Critical Kctech Co Ltd
Publication of SG10201904669TA publication Critical patent/SG10201904669TA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201904669TA 2018-06-28 2019-05-24 Polishing Slurry Composition SG10201904669TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180074567A KR20200001724A (en) 2018-06-28 2018-06-28 Polishing slurry composition
KR1020180137610A KR102442600B1 (en) 2018-11-09 2018-11-09 Polishing Slurry Composition

Publications (1)

Publication Number Publication Date
SG10201904669TA true SG10201904669TA (en) 2020-01-30

Family

ID=69007949

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201904669TA SG10201904669TA (en) 2018-06-28 2019-05-24 Polishing Slurry Composition

Country Status (5)

Country Link
US (1) US11279851B2 (en)
JP (1) JP6941138B2 (en)
CN (1) CN110655867A (en)
SG (1) SG10201904669TA (en)
TW (1) TWI808200B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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JP7398304B2 (en) * 2020-03-19 2023-12-14 株式会社フジミインコーポレーテッド Polishing composition, polishing method, and semiconductor substrate manufacturing method
CN112185606B (en) * 2020-09-29 2022-04-01 深圳市法鑫忠信新材料有限公司 High-molecular flexible conductive film and preparation method thereof
CN113355023B (en) * 2021-05-31 2022-08-09 中南大学 Preparation method of 4D printing NiTi alloy EBSD sample polishing solution, product and application
KR102728251B1 (en) * 2021-12-31 2024-11-11 주식회사 케이씨텍 Slurry composition for polishing metal film for contact process
US20250376610A1 (en) * 2024-06-05 2025-12-11 Entegris, Inc. Silica-based slurry for selective polishing of silicon carbide

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JP2005064285A (en) 2003-08-14 2005-03-10 Hitachi Chem Co Ltd Polishing solution and polishing method for cmp
ATE463838T1 (en) 2003-09-30 2010-04-15 Fujimi Inc POLISHING COMPOSITION AND POLISHING METHOD
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KR20160142995A (en) * 2015-06-04 2016-12-14 주식회사 케이씨텍 Slurry composition for semiconductor polishing
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JP7122097B2 (en) * 2017-10-24 2022-08-19 山口精研工業株式会社 Abrasive composition for magnetic disk substrate
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US20190352535A1 (en) * 2018-05-21 2019-11-21 Versum Materials Us, Llc Chemical Mechanical Polishing Tungsten Buffing Slurries

Also Published As

Publication number Publication date
TWI808200B (en) 2023-07-11
US20200002573A1 (en) 2020-01-02
TW202000846A (en) 2020-01-01
US11279851B2 (en) 2022-03-22
JP2020002356A (en) 2020-01-09
CN110655867A (en) 2020-01-07
JP6941138B2 (en) 2021-09-29

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