SG10201904669TA - Polishing Slurry Composition - Google Patents
Polishing Slurry CompositionInfo
- Publication number
- SG10201904669TA SG10201904669TA SG10201904669TA SG10201904669TA SG10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA SG 10201904669T A SG10201904669T A SG 10201904669TA
- Authority
- SG
- Singapore
- Prior art keywords
- slurry composition
- polishing slurry
- polishing
- composition
- slurry
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180074567A KR20200001724A (en) | 2018-06-28 | 2018-06-28 | Polishing slurry composition |
| KR1020180137610A KR102442600B1 (en) | 2018-11-09 | 2018-11-09 | Polishing Slurry Composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201904669TA true SG10201904669TA (en) | 2020-01-30 |
Family
ID=69007949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201904669TA SG10201904669TA (en) | 2018-06-28 | 2019-05-24 | Polishing Slurry Composition |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11279851B2 (en) |
| JP (1) | JP6941138B2 (en) |
| CN (1) | CN110655867A (en) |
| SG (1) | SG10201904669TA (en) |
| TW (1) | TWI808200B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7398304B2 (en) * | 2020-03-19 | 2023-12-14 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method, and semiconductor substrate manufacturing method |
| CN112185606B (en) * | 2020-09-29 | 2022-04-01 | 深圳市法鑫忠信新材料有限公司 | High-molecular flexible conductive film and preparation method thereof |
| CN113355023B (en) * | 2021-05-31 | 2022-08-09 | 中南大学 | Preparation method of 4D printing NiTi alloy EBSD sample polishing solution, product and application |
| KR102728251B1 (en) * | 2021-12-31 | 2024-11-11 | 주식회사 케이씨텍 | Slurry composition for polishing metal film for contact process |
| US20250376610A1 (en) * | 2024-06-05 | 2025-12-11 | Entegris, Inc. | Silica-based slurry for selective polishing of silicon carbide |
Family Cites Families (47)
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|---|---|---|---|---|
| JP4684121B2 (en) | 1999-08-17 | 2011-05-18 | 日立化成工業株式会社 | Chemical mechanical polishing abrasive and substrate polishing method |
| CN1203529C (en) * | 1999-08-17 | 2005-05-25 | 日立化成工业株式会社 | Polishing agent for chemical mechanical polishing and polishing method of substrate |
| JP4238951B2 (en) | 1999-09-28 | 2009-03-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| US6328774B1 (en) | 2000-02-23 | 2001-12-11 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
| JP2003529662A (en) | 2000-03-31 | 2003-10-07 | バイエル アクチェンゲゼルシャフト | Polishing agent and method for producing flat layer |
| JP4439755B2 (en) | 2001-03-29 | 2010-03-24 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| KR20030013181A (en) * | 2001-08-07 | 2003-02-14 | 삼성전자주식회사 | Microwave oven with rice cooking function and controlling method thereof |
| EP1505639B1 (en) | 2002-04-30 | 2008-08-06 | Hitachi Chemical Company, Ltd. | Polishing fluid and polishing method |
| TWI282360B (en) | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| JP2004179294A (en) | 2002-11-26 | 2004-06-24 | Hitachi Chem Co Ltd | Polishing liquid and polishing method |
| JP2005064285A (en) | 2003-08-14 | 2005-03-10 | Hitachi Chem Co Ltd | Polishing solution and polishing method for cmp |
| ATE463838T1 (en) | 2003-09-30 | 2010-04-15 | Fujimi Inc | POLISHING COMPOSITION AND POLISHING METHOD |
| JP4541674B2 (en) | 2003-09-30 | 2010-09-08 | 株式会社フジミインコーポレーテッド | Polishing composition |
| US7253111B2 (en) | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
| US7842193B2 (en) | 2005-09-29 | 2010-11-30 | Fujifilm Corporation | Polishing liquid |
| JP2007123826A (en) | 2005-09-29 | 2007-05-17 | Fujifilm Corp | Polishing liquid |
| JP2007154176A (en) | 2005-11-11 | 2007-06-21 | Hitachi Chem Co Ltd | Polishing liquid for polishing ito film and method for polishing substrate |
| CN101346806B (en) * | 2005-12-27 | 2010-09-29 | 日立化成工业株式会社 | Polishing liquid for metal and method for polishing film to be polished |
| CN101370898B (en) | 2006-02-14 | 2012-09-12 | 卡伯特微电子公司 | Compositions and methods for cmp of indium tin oxide surfaces |
| CN101410956B (en) | 2006-04-03 | 2010-09-08 | Jsr株式会社 | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| KR100823457B1 (en) | 2006-12-22 | 2008-04-21 | 테크노세미켐 주식회사 | Copper Chemical Mechanical Polishing Composition Containing Zeolite |
| SG182993A1 (en) * | 2007-07-05 | 2012-08-30 | Hitachi Chemical Co Ltd | Polishing slurry for metal films and polishing method |
| WO2009017095A1 (en) | 2007-07-30 | 2009-02-05 | Hitachi Chemical Co., Ltd. | Polishing liquid for metal and method of polishing |
| JP5188175B2 (en) * | 2007-12-28 | 2013-04-24 | 日揮触媒化成株式会社 | Silica sol and method for producing the same |
| WO2009128494A1 (en) | 2008-04-16 | 2009-10-22 | 日立化成工業株式会社 | Polishing solution for cmp and polishing method |
| CN101345806A (en) | 2008-08-15 | 2009-01-14 | 苏州佳世达电通有限公司 | Scanning method for automatically performing scanning extended function and its auxiliary device |
| JP5371416B2 (en) * | 2008-12-25 | 2013-12-18 | 富士フイルム株式会社 | Polishing liquid and polishing method |
| JP5648153B2 (en) | 2010-09-13 | 2015-01-07 | 熊本県 | Abrasive |
| CN103339219B (en) | 2011-01-25 | 2015-01-14 | 日立化成株式会社 | CMP polishing liquid and its manufacturing method, manufacturing method of composite particle, and grinding method of matrix |
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| US9303190B2 (en) * | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| WO2015146942A1 (en) * | 2014-03-28 | 2015-10-01 | 山口精研工業株式会社 | Polishing agent composition and method for polishing magnetic disk substrate |
| CN106661429B (en) | 2014-08-26 | 2019-07-05 | 凯斯科技股份有限公司 | Polishing slurries composition |
| KR101741707B1 (en) * | 2015-02-27 | 2017-05-30 | 유비머트리얼즈주식회사 | Polishing slurry and substrate polishing method using the same |
| US10160884B2 (en) | 2015-03-23 | 2018-12-25 | Versum Materials Us, Llc | Metal compound chemically anchored colloidal particles and methods of production and use thereof |
| KR20160121229A (en) * | 2015-04-10 | 2016-10-19 | 주식회사 케이씨텍 | Metal-substituted abrasive, method of preparing the same and polishing slurry composition comprising the metal-substituted abrasive |
| KR20160142995A (en) * | 2015-06-04 | 2016-12-14 | 주식회사 케이씨텍 | Slurry composition for semiconductor polishing |
| KR101682085B1 (en) * | 2015-07-09 | 2016-12-02 | 주식회사 케이씨텍 | Slurry composition for tungsten polishing |
| US10077381B2 (en) | 2015-07-20 | 2018-09-18 | Kctech Co., Ltd. | Polishing slurry composition |
| CN105839111A (en) | 2016-05-05 | 2016-08-10 | 西安热工研究院有限公司 | Mechanical polishing solution for preparing EBSD sample, preparation method and mechanical polishing method |
| US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
| CN106398544A (en) | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
| JP6282708B2 (en) | 2016-10-07 | 2018-02-21 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method using the same, and manufacturing method thereof |
| JP7122097B2 (en) * | 2017-10-24 | 2022-08-19 | 山口精研工業株式会社 | Abrasive composition for magnetic disk substrate |
| KR20200100809A (en) * | 2018-03-23 | 2020-08-26 | 후지필름 가부시키가이샤 | Polishing liquid and chemical mechanical polishing method |
| US20190352535A1 (en) * | 2018-05-21 | 2019-11-21 | Versum Materials Us, Llc | Chemical Mechanical Polishing Tungsten Buffing Slurries |
-
2019
- 2019-05-24 SG SG10201904669TA patent/SG10201904669TA/en unknown
- 2019-05-30 US US16/426,906 patent/US11279851B2/en active Active
- 2019-06-18 TW TW108121062A patent/TWI808200B/en active
- 2019-06-21 CN CN201910540392.3A patent/CN110655867A/en active Pending
- 2019-06-25 JP JP2019117121A patent/JP6941138B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI808200B (en) | 2023-07-11 |
| US20200002573A1 (en) | 2020-01-02 |
| TW202000846A (en) | 2020-01-01 |
| US11279851B2 (en) | 2022-03-22 |
| JP2020002356A (en) | 2020-01-09 |
| CN110655867A (en) | 2020-01-07 |
| JP6941138B2 (en) | 2021-09-29 |
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