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WO2009004759A1 - Thermoelectric device - Google Patents

Thermoelectric device Download PDF

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Publication number
WO2009004759A1
WO2009004759A1 PCT/JP2008/001451 JP2008001451W WO2009004759A1 WO 2009004759 A1 WO2009004759 A1 WO 2009004759A1 JP 2008001451 W JP2008001451 W JP 2008001451W WO 2009004759 A1 WO2009004759 A1 WO 2009004759A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
insulating substrate
thermoelectric device
thermoelectric
apart
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/001451
Other languages
French (fr)
Japanese (ja)
Inventor
Junichi Teraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Publication of WO2009004759A1 publication Critical patent/WO2009004759A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Disclosed is a thermoelectric device comprising an insulating substrate (1), a first electrode (2b) formed on one surface of the insulating substrate (1), a second electrode (3c) formed on the one surface of the insulating substrate (1) apart from the first electrode (2b), a third electrode (9c) formed on the other surface of the insulating substrate (1) and connected with the second electrode (3c) through a through hole (4) formed in the insulating substrate (1), and a first thermoelectric member (5b) of a first conductivity type which is formed on the one surface of the insulating substrate (1) as a thin film in contact with the first electrode (2b) and the second electrode (3c).
PCT/JP2008/001451 2007-07-02 2008-06-06 Thermoelectric device Ceased WO2009004759A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-174253 2007-07-02
JP2007174253A JP2009016442A (en) 2007-07-02 2007-07-02 Thermoelectric element

Publications (1)

Publication Number Publication Date
WO2009004759A1 true WO2009004759A1 (en) 2009-01-08

Family

ID=40225826

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/001451 Ceased WO2009004759A1 (en) 2007-07-02 2008-06-06 Thermoelectric device

Country Status (2)

Country Link
JP (1) JP2009016442A (en)
WO (1) WO2009004759A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840990A (en) * 2010-04-30 2010-09-22 华南师范大学 Hole preparation method of N-type pure Si-doped thermoelectric material
US11352582B2 (en) 2015-11-06 2022-06-07 The Lubrizol Corporation Lubricant with high pyrophosphate level

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101679833B1 (en) * 2014-09-11 2016-11-28 고려대학교 산학협력단 Thermoelectric generator module and method for producing the same
JP6405446B2 (en) * 2015-02-24 2018-10-17 富士フイルム株式会社 Thermoelectric conversion element and thermoelectric conversion module
JP6431992B2 (en) * 2015-11-17 2018-11-28 富士フイルム株式会社 Thermoelectric conversion element and thermoelectric conversion module
WO2018061460A1 (en) * 2016-09-28 2018-04-05 Tdk株式会社 Thermoelectric conversion device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111345A (en) * 1993-10-14 1995-04-25 Matsushita Electric Ind Co Ltd Thermoelectric power generation device
JP2008130718A (en) * 2006-11-20 2008-06-05 Tokai Rika Co Ltd Thermoelectric conversion device and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111345A (en) * 1993-10-14 1995-04-25 Matsushita Electric Ind Co Ltd Thermoelectric power generation device
JP2008130718A (en) * 2006-11-20 2008-06-05 Tokai Rika Co Ltd Thermoelectric conversion device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101840990A (en) * 2010-04-30 2010-09-22 华南师范大学 Hole preparation method of N-type pure Si-doped thermoelectric material
CN101840990B (en) * 2010-04-30 2012-07-11 华南师范大学 A method for preparing holes in N-type pure Si-doped thermoelectric materials
US11352582B2 (en) 2015-11-06 2022-06-07 The Lubrizol Corporation Lubricant with high pyrophosphate level

Also Published As

Publication number Publication date
JP2009016442A (en) 2009-01-22

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