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WO2009092426A2 - Pile solaire et procédé de production d'une pile solaire - Google Patents

Pile solaire et procédé de production d'une pile solaire Download PDF

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Publication number
WO2009092426A2
WO2009092426A2 PCT/EP2008/010713 EP2008010713W WO2009092426A2 WO 2009092426 A2 WO2009092426 A2 WO 2009092426A2 EP 2008010713 W EP2008010713 W EP 2008010713W WO 2009092426 A2 WO2009092426 A2 WO 2009092426A2
Authority
WO
WIPO (PCT)
Prior art keywords
metallization
region
base
emitter
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/010713
Other languages
German (de)
English (en)
Other versions
WO2009092426A3 (fr
Inventor
Oliver Schultz-Wittmann
Filip Granek
Martin Hermle
Jan Benick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Albert Ludwigs Universitaet Freiburg
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Albert Ludwigs Universitaet Freiburg
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Albert Ludwigs Universitaet Freiburg, Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Albert Ludwigs Universitaet Freiburg
Priority to EP08871544A priority Critical patent/EP2232573A2/fr
Publication of WO2009092426A2 publication Critical patent/WO2009092426A2/fr
Publication of WO2009092426A3 publication Critical patent/WO2009092426A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell according to the preamble of claim 1 and to a method for producing the solar cell according to claim 9.
  • Typical solar cells have a front surface for coupling in electromagnetic radiation and a back side. They comprise at least one base metallization and at least one emitter metallization as well as a semiconductor structure which has at least one base region of a first doping type and at least one emitter region of a second doping type.
  • Base region and emitter region are arranged at least partially adjacent to one another, so that a pn junction is formed between the base and emitter.
  • Doping types are the n-type doping and the opposite p-type doping.
  • the base metallization is electrically conductively connected to the base region and the emitter metallization to the emitter region, so that charge carriers from the base region or the emitter region can be supplied and removed via the respective metallization.
  • the term “electrically conductively connected” neglects those currents or recombination effects which occur at or via a pn junction.
  • the emitter and base are thus not electrically conductively connected via the pn junction and accordingly, the emitter metallization is not electrically connected to the base region and the base metallization is not electrically connected to the emitter region.
  • the invention relates to such solar cells, in the base and Emittermetallmaschine either both at the front or both at the
  • CONFIRMATION COPY Rear side of the solar cell are arranged.
  • the side of the solar cell on which both metallizations are arranged is referred to below as the metallization side.
  • the arrangement of base and emitter metallization on the metallization side of the solar cell has various advantages: If the metallization side, for example, the back of the solar cell, the coupling of electromagnetic radiation is not limited by a metallization on the front. Furthermore, the arrangement of the two metallizations on the metallization side enables the contacting of the solar cell only via one side, so that, in particular, a simpler module connection of such solar cells is possible.
  • the metallization side In the case of one-sided contactable solar cells, it is typical for the metallization side to be arranged laterally next to one another in an alternating sequence
  • Base regions the sizes of the overlying metallizations and excessive reduction, for example, of the base region on the metallization surface leads to a reduction of the base metallization, in particular with regard to the width and thus to increased line resistances, which in turn reduce the efficiency of the solar cell.
  • the invention is therefore based on the object to provide a solar cell in which at least one base metallization and at least one emitter metallization are arranged on a metallization side of the solar cell and at the same time a high efficiency of the solar cell is ensured, reducing the risk of short-circuit currents.
  • the solar cell according to the invention has a front side for coupling in electromagnetic radiation and a rear side.
  • the solar cell comprises at least one base metallization and at least one emitter metallization as well as a semiconductor structure which has at least one base region of a first doping type and at least one emitter region of a second doping type for forming a pn junction between base and emitter.
  • the first doping type is opposite to the second doping type.
  • the base metallization is electrically connected to the base region and the emitter metallization to the emitter region. Furthermore, base metallization and emitter metallization are both disposed on a metallization side of the solar cell, with the metallization side being either the front or the back of the solar cell.
  • the emitter region of the solar cell extends at least partially along the metallization side of the solar cell.
  • the emitter region extends at least partially in the area of the metallization side covered by the base metallization, and that the semiconductor structure additionally has an insulation region of the first doping type which extends at least partially between the base metallization and the emitter region along the metallization side of the solar cell.
  • the solar cell according to the invention thus has an overlap between base metalization and emitter region, wherein the separation between base metallization and emitter region is not effected by an insulating layer but by an isolation region of the first doping type.
  • the isolation region extends at least along that region of the metallization side which is covered by the metallization.
  • the semiconductor structure of the solar cell is formed in a semiconductor substrate, in particular advantageously in a silicon wafer.
  • the metallization surface is in this case a surface of the semiconductor substrate and the emitter region is layered on the metallization surface and substantially parallel to the
  • the isolation region is also formed on the metallization surface in the semiconductor substrate.
  • the isolation region is formed by overcompensation of the emitter region by means of diffusion.
  • This allows a simple production of the solar cell according to the invention, by initially formed as previously known, an emitter on the metallization of the solar cell which extends substantially over the entire metallization surface of the solar cell and then by overcompensation at the desired areas of the metallization one or more isolation regions are generated.
  • the semiconductor structure of the solar cell is formed in a semiconductor substrate, wherein the
  • Metallleitersober Design is a surface of the semiconductor substrate.
  • the emitter region is formed in layers on the metallization surface and substantially parallel to it in the semiconductor substrate, as described above.
  • the insulation region is formed as a separate semiconductor layer in this advantageous embodiment.
  • This semiconductor layer is disposed on the metallization surface of the semiconductor substrate, wherein the base metallization is formed on the semiconductor layer.
  • the solar cell is formed, as known, by forming an emitter in a semiconductor substrate on the metallization surface of the semiconductor substrate and then one or more semiconductor layers, which represent the isolation regions, are first applied to the metallization surface in one or more desired regions are accordingly doped according to the first doping type. Subsequently, the base metallization is disposed on the metallization side of the solar cell so as to be applied to the isolation region, which is formed in this case as a semiconductor layer.
  • base and emitter metallization are at least partially designed as line-like metallizations.
  • the base and emitter metallization are at least partially embodied as parallel line-type metallization fingers.
  • Emitter metallization has a width in the range of 100 microns to 2000 microns. In particular, it is advantageous if the metallization fingers have a width of about 1000 ⁇ m.
  • the distance between the metallization fingers is advantageously in the range of 100 microns to 500 microns.
  • the insulation region is electrically conductively connected to the base region. This is achieved, in particular, advantageously in that the insulation region is at least partially directly adjacent to the base region.
  • the electrically conductive connection between the base metallization and the base region can be realized, for example, by electrically grounding the base metalization to the insulation region and in turn to the base region.
  • the above-described solar cell according to the invention is produced according to a method according to claim 9 from a semiconductor substrate.
  • a base region of a first doping type and an emitter region of a second doping type adjoining at least partially to the base region are produced, wherein the first doping type is opposite to the second doping type.
  • the emitter region extends at least partially along a metallization surface of the semiconductor substrate.
  • a step B an isolation region of the first doping type is generated, which extends at least partially between the metallization surface and the emitter region.
  • a base metallization is applied to the metallization surface of the semiconductor substrate, wherein the base metallization at least partially covers the metallization surface in the region in which the isolation region extends. The isolation region is thus at least partially covered by the base metallization.
  • an emitter metallization is applied to the metallization surface of the semiconductor substrate, the emitter metallization at least partially covering the metallization surface in the region in which the emitter region extends. The emitter region is thus at least partially covered by the emitter metallization.
  • step B the isolation region is generated by means of diffusion of dopants.
  • the isolation region is generated by means of diffusion of dopants.
  • Isolation area is generated by over-compensation of the emitter.
  • step B the isolation region is produced by depositing a semiconductor layer on the metallization surface of the semiconductor substrate, the semiconductor layer being a layer of the first doping type.
  • step D the base metallization is applied to the insulating region formed as a semiconductor layer.
  • step B the insulation region is produced in such a way that first the emitter region is partially removed and subsequently the insulation region is produced in a diffusion process.
  • the emitter is partially removed up to a predetermined depth.
  • the predefined depth corresponds approximately to the depth of the pn junction starting from the metallization surface, minus the depth of the insulation region which has diffused in the diffusion process.
  • the isolation region provides electrical isolation between base metallization and emitter region.
  • the emitter region is partially removed by means of laser ablation.
  • Figure 1 is a schematic representation of a solar cell according to the invention in cross section.
  • the front side for coupling electromagnetic radiation is arranged at the bottom and the back accordingly above.
  • the solar cell includes a base metallization 3 and an emitter metallization 6. Further, the solar cell includes a semiconductor structure formed in a silicon wafer. An n-doped base region 1 and a p-doped emitter region 2, which thus has a doping type opposite to the base region, are formed in the silicon wafer.
  • a pn junction results, for charge carrier separation of the free charge carriers generated by the coupled-in electromagnetic radiation.
  • Base metallization 3 and emitter metallization 6 are arranged on the upper side of the solar cell in FIG. 1, the rear side is thus the metallization side of the solar cell.
  • the emitter region extends at least partially into the region of the metallization side covered by the base metallization. This area is identified by way of example in FIG. Furthermore, the semiconductor structure has an insulation region 4 which extends along the Metallleitersseite the solar cell partially between base metallization and the emitter region extends.
  • the isolation region 4 is also n-doped like the base.
  • the base metallization 3 is electrically conductively connected to the insulation region 4 and the insulation region 4 is electrically conductively connected to the base region 1, so that the base metallization 3 is also electrically conductively connected to the base region 1.
  • the emitter region 2 is electrically conductively connected to the emitter metallization 6.
  • the base metallization 3 extends over the metallization surface, but at the same time the emitter region 2 extends along the metallization side in this region A, the insulation region 4 being arranged between emitter region 2 and base metallization 3.
  • a pn junction is formed, so that in particular the base metalization 3 is electrically separated from emitter region 2 in region A.
  • Emitter metallization 6 corresponds. Emitter metallization and base metallization are linear, with the lines in Figure 1 perpendicular to the plane.
  • the emitter region 2 is guided in an overlapping manner under the base metalization 3, resulting in an increase in efficiency of the solar cell and, at the same time, ensuring sufficiently strong metallization by the base metalization 3, so that losses due to ohmic resistances of the base metallization 3 are also minimized.
  • the emitter region 2 was produced by diffusion starting from an n-doped silicon wafer. Subsequently, at the location marked by the dashed arrow 5, the silicon wafer was partially removed starting from the metallization side and thus the emitter region 2.
  • the isolation region 4 was generated by diffusion. Because the penetration depth of the diffused insulation region is greater than the remaining thickness of the emitter region in the region in which the emitter region has been partially removed, an electrically conductive connection between insulation region 4 and base region 1 is formed at the point identified by reference numeral 5 in FIG. This ensures that, on the one hand, the base metalization 3 is electrically conductively connected to the base region 1 via the insulation region 4 and beyond
  • the isolation region 4 shields the emitter region 2 from the base metallization 3.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une pile solaire présentant une face avant pour injecter un rayonnement électromagnétique et une face arrière, comprenant au moins une métallisation de base (3) et au moins une métallisation émettrice (6), ainsi qu'une structure semi-conductrice, qui présente au moins une zone de base (1) d'un premier type de dopage et au moins une zone émettrice (2) d'un second type de dopage opposé au premier type de dopage, pour former une jonction pn entre la base et la partie émettrice. La métallisation de base (3) est reliée de manière électroconductrice à la zone de base (1) et la métallisation émettrice (6) est reliée de manière éelctroconductrice à la zone émettrice (2). La métallisation de base (3) et la métallisation émettrice (6) sont disposées l'une et l'autre sur une face de métallisation de la pile solaire, qui constitue la face avant ou la face arrière de ladite pile solaire. La zone émettrice (2) s'étend au moins en partie le long de la face de métallisation de la pile solaire. L'invention se caractérise en ce que la zone émettrice (2) s'étend au moins en partie dans la zone de la face de métallisation recouverte par la métallisation de base (3) et en ce que la structure semi-conductrice comporte également une zone d'isolation (4) du premier type de dopage, qui s'étend le long de la face de métallisation de la pile solaire, au moins en partie entre la métallisation de base (3) et la zone émettrice (2). L'invention concerne en outre un procédé permettant de produire une pile solaire.
PCT/EP2008/010713 2008-01-21 2008-12-16 Pile solaire et procédé de production d'une pile solaire Ceased WO2009092426A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08871544A EP2232573A2 (fr) 2008-01-21 2008-12-16 Pile solaire et procédé de production d'une pile solaire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008005396A DE102008005396A1 (de) 2008-01-21 2008-01-21 Solarzelle und Verfahren zur Herstellung einer Solarzelle
DE102008005396.1 2008-01-21

Publications (2)

Publication Number Publication Date
WO2009092426A2 true WO2009092426A2 (fr) 2009-07-30
WO2009092426A3 WO2009092426A3 (fr) 2009-09-24

Family

ID=40794259

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/010713 Ceased WO2009092426A2 (fr) 2008-01-21 2008-12-16 Pile solaire et procédé de production d'une pile solaire

Country Status (3)

Country Link
EP (1) EP2232573A2 (fr)
DE (1) DE102008005396A1 (fr)
WO (1) WO2009092426A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012173487A1 (fr) 2011-06-17 2012-12-20 Stichting Onderzoek Centrum Nederland Système photovoltaïque et connecteur pour cellule photovoltaïque avec contacts interdigités

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060238A1 (en) 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
DE102005025125A1 (de) 2005-05-29 2006-12-14 Hahn-Meitner-Institut Berlin Gmbh Verfahren zur Herstellung einer einseitig kontaktierten Solarzelle und einseitig kontaktierte Solarzelle
US20070256728A1 (en) 2006-05-04 2007-11-08 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060238A1 (en) 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
DE102005025125A1 (de) 2005-05-29 2006-12-14 Hahn-Meitner-Institut Berlin Gmbh Verfahren zur Herstellung einer einseitig kontaktierten Solarzelle und einseitig kontaktierte Solarzelle
US20070256728A1 (en) 2006-05-04 2007-11-08 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012173487A1 (fr) 2011-06-17 2012-12-20 Stichting Onderzoek Centrum Nederland Système photovoltaïque et connecteur pour cellule photovoltaïque avec contacts interdigités

Also Published As

Publication number Publication date
WO2009092426A3 (fr) 2009-09-24
DE102008005396A1 (de) 2009-07-30
EP2232573A2 (fr) 2010-09-29

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