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WO2009078251A1 - スイッチング素子およびその製造方法 - Google Patents

スイッチング素子およびその製造方法 Download PDF

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Publication number
WO2009078251A1
WO2009078251A1 PCT/JP2008/071311 JP2008071311W WO2009078251A1 WO 2009078251 A1 WO2009078251 A1 WO 2009078251A1 JP 2008071311 W JP2008071311 W JP 2008071311W WO 2009078251 A1 WO2009078251 A1 WO 2009078251A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
switching device
conducting layer
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/071311
Other languages
English (en)
French (fr)
Inventor
Naoki Banno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to US12/808,392 priority Critical patent/US8664651B2/en
Priority to JP2009546197A priority patent/JP5458892B2/ja
Publication of WO2009078251A1 publication Critical patent/WO2009078251A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

　第１電極(１０１)と、第２電極(１０２)と、第１電極(１０１)および第２電極(１０２)の間に配置された複合酸化物イオン伝導層(１０３)とを備える。複合酸化物イオン伝導層(１０３)は、金属酸化物を含む少なくとも２つの酸化物を備えている。また、第１電極(１０１)は、複合酸化物イオン伝導層(１０３)に電子を供給可能としている。また、第２電極(１０２)は、金属を含み、この金属のイオンを複合酸化物イオン伝送層(１０３)に供給可能としている。
PCT/JP2008/071311 2007-12-19 2008-11-25 スイッチング素子およびその製造方法 Ceased WO2009078251A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/808,392 US8664651B2 (en) 2007-12-19 2008-11-25 Switching device and method of manufacturing the same
JP2009546197A JP5458892B2 (ja) 2007-12-19 2008-11-25 スイッチング素子およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-326960 2007-12-19
JP2007326960 2007-12-19

Publications (1)

Publication Number Publication Date
WO2009078251A1 true WO2009078251A1 (ja) 2009-06-25

Family

ID=40795370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071311 Ceased WO2009078251A1 (ja) 2007-12-19 2008-11-25 スイッチング素子およびその製造方法

Country Status (3)

Country Link
US (1) US8664651B2 (ja)
JP (1) JP5458892B2 (ja)
WO (1) WO2009078251A1 (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010079829A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 スイッチング素子及びその製造方法
JP2010225750A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
JP2012023374A (ja) * 2010-07-13 2012-02-02 Crossbar Inc 二端子抵抗性スイッチングデバイス構造及びその製造方法
WO2012111205A1 (en) * 2011-02-18 2012-08-23 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
JP2012169469A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法
WO2013103122A1 (ja) * 2012-01-05 2013-07-11 日本電気株式会社 スイッチング素子及びその製造方法
JP2014017379A (ja) * 2012-07-09 2014-01-30 Toshiba Corp 不揮発性記憶装置
US9972778B2 (en) 2012-05-02 2018-05-15 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US10224370B2 (en) 2010-08-23 2019-03-05 Crossbar, Inc. Device switching using layered device structure
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
JP2020136690A (ja) * 2019-02-12 2020-08-31 富士通株式会社 電子装置及び認証装置
US10910561B1 (en) 2012-04-13 2021-02-02 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
JP2023129379A (ja) * 2022-03-04 2023-09-14 台湾積體電路製造股▲ふん▼有限公司 超薄バリア層を有する抵抗型メモリ装置及びその形成方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120241710A1 (en) * 2011-03-21 2012-09-27 Nanyang Technological University Fabrication of RRAM Cell Using CMOS Compatible Processes
JP5480233B2 (ja) * 2011-12-20 2014-04-23 株式会社東芝 不揮発性記憶装置、及びその製造方法
US9276041B2 (en) 2012-03-19 2016-03-01 Globalfoundries Singapore Pte Ltd Three dimensional RRAM device, and methods of making same
KR101956795B1 (ko) * 2013-11-15 2019-03-13 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
TWI488347B (zh) * 2014-04-08 2015-06-11 Winbond Electronics Corp 記憶體元件的形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006070773A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2006303343A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Ind Co Ltd 半導体メモリとその動作方法
JP2006319028A (ja) * 2005-05-11 2006-11-24 Nec Corp スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2008244090A (ja) * 2007-03-27 2008-10-09 Nec Corp スイッチング素子およびスイッチング素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60034663D1 (de) 1999-02-11 2007-06-14 Univ Arizona Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung
USRE42040E1 (en) * 2003-07-18 2011-01-18 Nec Corporation Switching element method of driving switching element rewritable logic integrated circuit and memory
JP5365829B2 (ja) * 2005-12-15 2013-12-11 日本電気株式会社 スイッチング素子およびその製造方法
WO2007114099A1 (ja) 2006-03-30 2007-10-11 Nec Corporation スイッチング素子およびスイッチング素子の製造方法
FR2904704B1 (fr) * 2006-08-04 2008-12-05 Saint Gobain Dispositif electrochimique, et/ou elelctrocommandable du type vitrage et a proprietes optiques et/ou energetiques variables

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006070773A1 (ja) * 2004-12-28 2006-07-06 Nec Corporation スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2006303343A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Ind Co Ltd 半導体メモリとその動作方法
JP2006319028A (ja) * 2005-05-11 2006-11-24 Nec Corp スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
JP2008244090A (ja) * 2007-03-27 2008-10-09 Nec Corp スイッチング素子およびスイッチング素子の製造方法

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586958B2 (en) 2009-01-09 2013-11-19 Nec Corporation Switching element and manufacturing method thereof
WO2010079829A1 (ja) * 2009-01-09 2010-07-15 日本電気株式会社 スイッチング素子及びその製造方法
JP2010225750A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 不揮発性半導体記憶装置
US8120942B2 (en) 2009-03-23 2012-02-21 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2012023374A (ja) * 2010-07-13 2012-02-02 Crossbar Inc 二端子抵抗性スイッチングデバイス構造及びその製造方法
US10224370B2 (en) 2010-08-23 2019-03-05 Crossbar, Inc. Device switching using layered device structure
JP2012169469A (ja) * 2011-02-15 2012-09-06 Toshiba Corp 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法
US8835896B2 (en) 2011-02-18 2014-09-16 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
WO2012111205A1 (en) * 2011-02-18 2012-08-23 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
US9391272B2 (en) 2011-02-18 2016-07-12 Kabushiki Kaisha Toshiba Nonvolatile variable resistance element
JP2012174754A (ja) * 2011-02-18 2012-09-10 Toshiba Corp 不揮発性抵抗変化素子
WO2013103122A1 (ja) * 2012-01-05 2013-07-11 日本電気株式会社 スイッチング素子及びその製造方法
US10910561B1 (en) 2012-04-13 2021-02-02 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US9972778B2 (en) 2012-05-02 2018-05-15 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
JP2014017379A (ja) * 2012-07-09 2014-01-30 Toshiba Corp 不揮発性記憶装置
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
JP2020136690A (ja) * 2019-02-12 2020-08-31 富士通株式会社 電子装置及び認証装置
JP7205273B2 (ja) 2019-02-12 2023-01-17 富士通株式会社 電子装置及び認証装置
JP2023129379A (ja) * 2022-03-04 2023-09-14 台湾積體電路製造股▲ふん▼有限公司 超薄バリア層を有する抵抗型メモリ装置及びその形成方法
JP7667810B2 (ja) 2022-03-04 2025-04-23 台湾積體電路製造股▲ふん▼有限公司 超薄バリア層を有する抵抗型メモリ装置及びその形成方法

Also Published As

Publication number Publication date
JP5458892B2 (ja) 2014-04-02
US20110108829A1 (en) 2011-05-12
US8664651B2 (en) 2014-03-04
JPWO2009078251A1 (ja) 2011-04-28

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