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WO2009078081A1 - 半導体集積回路 - Google Patents

半導体集積回路 Download PDF

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Publication number
WO2009078081A1
WO2009078081A1 PCT/JP2007/074144 JP2007074144W WO2009078081A1 WO 2009078081 A1 WO2009078081 A1 WO 2009078081A1 JP 2007074144 W JP2007074144 W JP 2007074144W WO 2009078081 A1 WO2009078081 A1 WO 2009078081A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
semiconductor integrated
integrated circuit
energy consumption
function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074144
Other languages
English (en)
French (fr)
Inventor
Hiroshi Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009546095A priority Critical patent/JP5024389B2/ja
Priority to PCT/JP2007/074144 priority patent/WO2009078081A1/ja
Publication of WO2009078081A1 publication Critical patent/WO2009078081A1/ja
Priority to US12/813,360 priority patent/US8063692B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

(課題) 　本発明の目的は、内部回路に対して、動作周波数又は動作電圧の変更を行う機能と、電源の供給の切断及び分離を行う機能とを有し、ＤＶＦＳ手法及びＰＧ手法の内、どちらか有利となる消費電流削減手法を実施することを特徴とする半導体集積回路装置を提供することにある。 (解決手段) 　上記の課題を解決するため、本発明は、素子特性検出回路と、素子特性に対応して、内部回路が行うべきタスクの実行中に、パワーゲーティング動作を行った場合の消費エネルギー及び電圧及び周波数を減少させた動作を行った場合の消費エネルギーを算出する算出回路と、消費エネルギーが小さい動作を内部回路に対して行う回路を活性化する切り替え回路と、を備えることを特徴とする半導体集積回路装置を提供する。
PCT/JP2007/074144 2007-12-14 2007-12-14 半導体集積回路 Ceased WO2009078081A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009546095A JP5024389B2 (ja) 2007-12-14 2007-12-14 半導体集積回路
PCT/JP2007/074144 WO2009078081A1 (ja) 2007-12-14 2007-12-14 半導体集積回路
US12/813,360 US8063692B2 (en) 2007-12-14 2010-06-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/074144 WO2009078081A1 (ja) 2007-12-14 2007-12-14 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/813,360 Continuation US8063692B2 (en) 2007-12-14 2010-06-10 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
WO2009078081A1 true WO2009078081A1 (ja) 2009-06-25

Family

ID=40795207

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074144 Ceased WO2009078081A1 (ja) 2007-12-14 2007-12-14 半導体集積回路

Country Status (3)

Country Link
US (1) US8063692B2 (ja)
JP (1) JP5024389B2 (ja)
WO (1) WO2009078081A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014003594A (ja) * 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
WO2014097362A1 (ja) * 2012-12-21 2014-06-26 ルネサスモバイル株式会社 半導体装置及びその制御方法
KR20170023813A (ko) 2014-06-20 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2018081700A (ja) * 2012-03-07 2018-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2019537377A (ja) * 2016-11-22 2019-12-19 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ パワーゲーティング回路によって提供された分配負荷電流を感知するための装置および方法
JP2020013859A (ja) * 2018-07-17 2020-01-23 キヤノン株式会社 集積回路装置
JP2021508863A (ja) * 2017-11-10 2021-03-11 エヌビディア コーポレーション 安全で信頼できる自動運転車両のためのシステム及び方法
US11854599B2 (en) 2019-06-07 2023-12-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US12353264B2 (en) 2019-08-30 2025-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and control system
US12386411B2 (en) 2019-12-06 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Control device and data processing system

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014063480A (ja) * 2012-08-30 2014-04-10 Semiconductor Energy Lab Co Ltd 警報システム
FR3010545B1 (fr) * 2013-09-06 2016-12-09 Commissariat Energie Atomique Procede de commande d'un circuit electronique
KR20150112148A (ko) 2014-03-27 2015-10-07 삼성전자주식회사 파워 게이팅 회로 및 집적 회로
US9557797B2 (en) * 2014-05-20 2017-01-31 Qualcomm Incorporated Algorithm for preferred core sequencing to maximize performance and reduce chip temperature and power
TWI712925B (zh) * 2017-01-24 2020-12-11 瑞昱半導體股份有限公司 電子裝置與其控制方法
US10529407B2 (en) 2017-07-20 2020-01-07 Samsung Electronics Co., Ltd. Memory device including a plurality of power rails and method of operating the same
US10535394B2 (en) 2017-07-20 2020-01-14 Samsung Electronics Co., Ltd. Memory device including dynamic voltage and frequency scaling switch and method of operating the same
US10607660B2 (en) 2017-07-20 2020-03-31 Samsung Electronics Co., Ltd. Nonvolatile memory device and operating method of the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076873A (ja) * 2000-06-16 2002-03-15 Hitachi Ltd 半導体集積回路装置
JP2005182433A (ja) * 2003-12-19 2005-07-07 Hitachi Ltd 半導体集積回路の実装設計装置及び実装設計方法
JP2007264726A (ja) * 2006-03-27 2007-10-11 Fujitsu Ltd 半導体集積回路の電源電圧・バイアス電圧制御方法、半導体集積回路及び半導体集積回路装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999066640A1 (en) * 1998-06-18 1999-12-23 Hitachi, Ltd. Semiconductor integrated circuit
JP3762856B2 (ja) 2000-05-30 2006-04-05 株式会社ルネサステクノロジ 半導体集積回路装置
JP4607608B2 (ja) * 2005-02-04 2011-01-05 株式会社東芝 半導体集積回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076873A (ja) * 2000-06-16 2002-03-15 Hitachi Ltd 半導体集積回路装置
JP2005182433A (ja) * 2003-12-19 2005-07-07 Hitachi Ltd 半導体集積回路の実装設計装置及び実装設計方法
JP2007264726A (ja) * 2006-03-27 2007-10-11 Fujitsu Ltd 半導体集積回路の電源電圧・バイアス電圧制御方法、半導体集積回路及び半導体集積回路装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018081700A (ja) * 2012-03-07 2018-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2014003594A (ja) * 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
US10236890B2 (en) 2012-12-21 2019-03-19 Renesas Electronics Corporation Semiconductor device and method for controlling the same
US9531388B2 (en) 2012-12-21 2016-12-27 Renesas Electronics Corporation Semiconductor device and method for controlling the same
JP5898342B2 (ja) * 2012-12-21 2016-04-06 ルネサスエレクトロニクス株式会社 半導体装置及びその制御方法
WO2014097362A1 (ja) * 2012-12-21 2014-06-26 ルネサスモバイル株式会社 半導体装置及びその制御方法
KR20170023813A (ko) 2014-06-20 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2019537377A (ja) * 2016-11-22 2019-12-19 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ パワーゲーティング回路によって提供された分配負荷電流を感知するための装置および方法
JP2021508863A (ja) * 2017-11-10 2021-03-11 エヌビディア コーポレーション 安全で信頼できる自動運転車両のためのシステム及び方法
JP7346401B2 (ja) 2017-11-10 2023-09-19 エヌビディア コーポレーション 安全で信頼できる自動運転車両のためのシステム及び方法
JP2020013859A (ja) * 2018-07-17 2020-01-23 キヤノン株式会社 集積回路装置
JP7199860B2 (ja) 2018-07-17 2023-01-06 キヤノン株式会社 集積回路装置
US11854599B2 (en) 2019-06-07 2023-12-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US12353264B2 (en) 2019-08-30 2025-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and control system
US12386411B2 (en) 2019-12-06 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Control device and data processing system

Also Published As

Publication number Publication date
JPWO2009078081A1 (ja) 2011-04-28
JP5024389B2 (ja) 2012-09-12
US8063692B2 (en) 2011-11-22
US20100244942A1 (en) 2010-09-30

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