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WO2009075308A1 - Cyclic compound, photoresist base, photoresist composition, microfabrication process, and semiconductor device - Google Patents

Cyclic compound, photoresist base, photoresist composition, microfabrication process, and semiconductor device Download PDF

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Publication number
WO2009075308A1
WO2009075308A1 PCT/JP2008/072469 JP2008072469W WO2009075308A1 WO 2009075308 A1 WO2009075308 A1 WO 2009075308A1 JP 2008072469 W JP2008072469 W JP 2008072469W WO 2009075308 A1 WO2009075308 A1 WO 2009075308A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
cyclic compound
semiconductor device
microfabrication process
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072469
Other languages
French (fr)
Japanese (ja)
Inventor
Takashi Kashiwamura
Akinori Yomogita
Masashi Sekikawa
Mitsuru Shibata
Norio Tomotsu
Takanori Owada
Junpei Maruyama
Hirotoshi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP2009545437A priority Critical patent/JPWO2009075308A1/en
Publication of WO2009075308A1 publication Critical patent/WO2009075308A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/92Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

Disclosed is a cyclic compound represented by formula (1). In the formula, 50% of R1's represent hydroxy groups, and the rest represent acid-cleavable dissolution inhibiting groups.
PCT/JP2008/072469 2007-12-11 2008-12-11 Cyclic compound, photoresist base, photoresist composition, microfabrication process, and semiconductor device Ceased WO2009075308A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009545437A JPWO2009075308A1 (en) 2007-12-11 2008-12-11 Cyclic compound, photoresist base material, photoresist composition, fine processing method and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-320223 2007-12-11
JP2007320223 2007-12-11

Publications (1)

Publication Number Publication Date
WO2009075308A1 true WO2009075308A1 (en) 2009-06-18

Family

ID=40755549

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072469 Ceased WO2009075308A1 (en) 2007-12-11 2008-12-11 Cyclic compound, photoresist base, photoresist composition, microfabrication process, and semiconductor device

Country Status (3)

Country Link
JP (1) JPWO2009075308A1 (en)
TW (1) TW200946500A (en)
WO (1) WO2009075308A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009244766A (en) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd Positive resist composition and pattern forming method using the same
WO2010067621A1 (en) * 2008-12-11 2010-06-17 出光興産株式会社 Cyclic compounds and photoresist compositions using same
JP2010254664A (en) * 2009-03-31 2010-11-11 Dainippon Printing Co Ltd Calix resorcinarene derivative, method for producing calix resorcinarene derivative, negative resist composition, and pattern forming method
WO2011024957A1 (en) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern
WO2011043029A1 (en) * 2009-10-06 2011-04-14 三菱瓦斯化学株式会社 Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern
WO2011065004A1 (en) * 2009-11-27 2011-06-03 三菱瓦斯化学株式会社 Cyclic compound, process for production thereof, radiation-sensitive composition, and resist pattern formation method
US8765356B2 (en) 2011-09-23 2014-07-01 Dow Global Technologies Llc Calixarene compound and photoresist composition comprising same
US8936900B2 (en) 2011-09-23 2015-01-20 Rohm And Haas Electronic Materials Llc Calixarene and photoresist composition comprising same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003313546A (en) * 2002-04-24 2003-11-06 Tokuyama Corp Luminescent composition
WO2005097725A1 (en) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. Calixresorcinarene compounds, photoresist base materials, and compositions thereof
JP2007197389A (en) * 2006-01-27 2007-08-09 Idemitsu Kosan Co Ltd Cyclic compound, and photoresist substrate and composition comprising the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003313546A (en) * 2002-04-24 2003-11-06 Tokuyama Corp Luminescent composition
WO2005097725A1 (en) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. Calixresorcinarene compounds, photoresist base materials, and compositions thereof
JP2007197389A (en) * 2006-01-27 2007-08-09 Idemitsu Kosan Co Ltd Cyclic compound, and photoresist substrate and composition comprising the same

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009244766A (en) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd Positive resist composition and pattern forming method using the same
WO2010067621A1 (en) * 2008-12-11 2010-06-17 出光興産株式会社 Cyclic compounds and photoresist compositions using same
JP2010254664A (en) * 2009-03-31 2010-11-11 Dainippon Printing Co Ltd Calix resorcinarene derivative, method for producing calix resorcinarene derivative, negative resist composition, and pattern forming method
EP2474518A4 (en) * 2009-08-31 2014-03-26 Mitsubishi Gas Chemical Co Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern
WO2011024957A1 (en) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern
JP5733211B2 (en) * 2009-08-31 2015-06-10 三菱瓦斯化学株式会社 CYCLIC COMPOUND, PROCESS FOR PRODUCING THE SAME, RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
US8829247B2 (en) 2009-10-06 2014-09-09 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, method of producing the same, radiation sensitive composition, and method of forming resist pattern
WO2011043029A1 (en) * 2009-10-06 2011-04-14 三菱瓦斯化学株式会社 Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern
KR101779512B1 (en) 2009-10-06 2017-09-18 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern
CN102666461A (en) * 2009-11-27 2012-09-12 三菱瓦斯化学株式会社 Cyclic compound, process for production thereof, radiation-sensitive composition, and resist pattern formation method
WO2011065004A1 (en) * 2009-11-27 2011-06-03 三菱瓦斯化学株式会社 Cyclic compound, process for production thereof, radiation-sensitive composition, and resist pattern formation method
US8969629B2 (en) 2009-11-27 2015-03-03 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, production process thereof, radiation-sensitive composition and resist pattern formation method
JP5857745B2 (en) * 2009-11-27 2016-02-10 三菱瓦斯化学株式会社 CYCLIC COMPOUND, PROCESS FOR PRODUCING THE SAME, RADIOSENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
US8765356B2 (en) 2011-09-23 2014-07-01 Dow Global Technologies Llc Calixarene compound and photoresist composition comprising same
US8936900B2 (en) 2011-09-23 2015-01-20 Rohm And Haas Electronic Materials Llc Calixarene and photoresist composition comprising same

Also Published As

Publication number Publication date
TW200946500A (en) 2009-11-16
JPWO2009075308A1 (en) 2011-04-28

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