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WO2009057638A1 - ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品 - Google Patents

ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品 Download PDF

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Publication number
WO2009057638A1
WO2009057638A1 PCT/JP2008/069652 JP2008069652W WO2009057638A1 WO 2009057638 A1 WO2009057638 A1 WO 2009057638A1 JP 2008069652 W JP2008069652 W JP 2008069652W WO 2009057638 A1 WO2009057638 A1 WO 2009057638A1
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
photosensitive resin
positive photosensitive
electronic component
disclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069652
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English (en)
French (fr)
Inventor
Tomonori Minegishi
Tomoko Kawamura
Masayuki Ohe
Yuki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HD MicroSystems Ltd
Original Assignee
Hitachi Chemical DuPont Microsystems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical DuPont Microsystems Ltd filed Critical Hitachi Chemical DuPont Microsystems Ltd
Priority to JP2009539089A priority Critical patent/JP5316417B2/ja
Priority to US12/739,127 priority patent/US8420291B2/en
Publication of WO2009057638A1 publication Critical patent/WO2009057638A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

　アルカリ水溶液で現像可能であり、耐熱性、機械特性に優れる良好な形状のパターンが得られるポジ型感光性樹脂組成物、パターンの製造方法及び電子部品を提供する。ポジ型感光性樹脂組成物は、（ａ）一般式（１）及び（２）のいずれかで表される構造単位を有し、かつ条件（ｉ）及び／又は（ii）を満たすポリベンゾオキサゾール又はその前駆体となるポリマーと、（ｂ）活性光線照射により酸を発生する化合物と、及び（ｃ）熱により前記（ａ）成分と架橋又は重合し得る、一般式（３）で表される構造を有する化合物とを含有する。
PCT/JP2008/069652 2007-10-29 2008-10-29 ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品 Ceased WO2009057638A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009539089A JP5316417B2 (ja) 2007-10-29 2008-10-29 ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
US12/739,127 US8420291B2 (en) 2007-10-29 2008-10-29 Positive photosensitive resin composition, method for forming pattern, electronic component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-280501 2007-10-29
JP2007280501 2007-10-29

Publications (1)

Publication Number Publication Date
WO2009057638A1 true WO2009057638A1 (ja) 2009-05-07

Family

ID=40591027

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069652 Ceased WO2009057638A1 (ja) 2007-10-29 2008-10-29 ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品

Country Status (5)

Country Link
US (1) US8420291B2 (ja)
JP (4) JP5176872B2 (ja)
KR (1) KR101275474B1 (ja)
TW (1) TWI439811B (ja)
WO (1) WO2009057638A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011180473A (ja) * 2010-03-03 2011-09-15 Toray Ind Inc 感光性樹脂組成物
KR101333690B1 (ko) 2009-12-28 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2017134701A1 (ja) * 2016-02-05 2017-08-10 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物
CN108388082A (zh) * 2017-02-03 2018-08-10 信越化学工业株式会社 感光性树脂组合物、感光性干膜、感光性树脂涂层和图案形成方法

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JP5735341B2 (ja) * 2011-04-28 2015-06-17 株式会社カネカ ポジ型感光性樹脂組成物
JP6252174B2 (ja) 2012-09-25 2017-12-27 東レ株式会社 ポジ型感光性樹脂組成物、それを用いた硬化膜を含む半導体装置の製造方法
KR101750463B1 (ko) 2013-11-26 2017-06-23 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
TW201525064A (zh) * 2013-12-16 2015-07-01 Daxin Materials Corp 感光樹脂組成物、感光樹脂及有機發光二極體顯示元件
TWI735422B (zh) * 2015-01-23 2021-08-11 日商艾曲迪微系統股份有限公司 正型感光性樹脂組成物、圖案硬化膜的製造方法、圖案硬化膜及電子零件
JP6756957B2 (ja) * 2015-01-28 2020-09-16 Ｈｄマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターン硬化膜の製造方法、層間絶縁膜、カバーコート層又は表面保護膜及び電子部品
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KR102040224B1 (ko) * 2016-08-09 2019-11-06 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
WO2018030761A1 (ko) * 2016-08-09 2018-02-15 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
WO2018066395A1 (ja) * 2016-10-05 2018-04-12 東レ株式会社 樹脂組成物、硬化膜、半導体装置およびそれらの製造方法
KR102038106B1 (ko) * 2016-10-24 2019-10-29 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
WO2018080125A1 (ko) * 2016-10-24 2018-05-03 주식회사 엘지화학 절연층 제조방법 및 다층인쇄회로기판 제조방법
JP7145126B2 (ja) * 2018-08-01 2022-09-30 信越化学工業株式会社 ポリアミド、ポリアミドイミド、ポリイミド構造を含む重合体、感光性樹脂組成物、パターン形成方法、感光性ドライフィルム及び電気・電子部品保護用皮膜
US11333975B2 (en) * 2020-04-14 2022-05-17 International Business Machines Corporation Polymer, photosensitive resin composition, patterning method, method of forming cured film, interlayer insulating film, surface protective film, and electronic component
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