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WO2009048003A1 - Surface examining device - Google Patents

Surface examining device Download PDF

Info

Publication number
WO2009048003A1
WO2009048003A1 PCT/JP2008/067733 JP2008067733W WO2009048003A1 WO 2009048003 A1 WO2009048003 A1 WO 2009048003A1 JP 2008067733 W JP2008067733 W JP 2008067733W WO 2009048003 A1 WO2009048003 A1 WO 2009048003A1
Authority
WO
WIPO (PCT)
Prior art keywords
light beam
polarized state
variation
patter
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067733
Other languages
French (fr)
Japanese (ja)
Inventor
Yuji Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2009536979A priority Critical patent/JP5370155B2/en
Publication of WO2009048003A1 publication Critical patent/WO2009048003A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A surface examining device exhibiting an improved defect detection accuracy by increasing the amount of information used for pattern defect detection. A diverging light beam emitted from a light source (1) is converted into a linearly polarized light beam by a polarizer (2), converted into a substantially parallel light beam by a concave mirror (3), and projected onto the whole of a wafer (4) i.e., a substrate under examination. The polarized state of the light beam regularly reflected by the wafer (4) is varied by the structural birefringence which a pattern (13) has. Since the polarized state variation by the structural birefringence differs according to the state of the patter (13) such as the line width, the trapezoidality of the cross-section, or the edge roughness, the polarized state variation can be used for pattern defect examination. Since the Stokes parameter of the illuminating light beam is known, the variation of the polarized state by the patter (13) can be determined by measuring the Stokes parameter of the reflected light.
PCT/JP2008/067733 2007-10-12 2008-09-30 Surface examining device Ceased WO2009048003A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536979A JP5370155B2 (en) 2007-10-12 2008-09-30 Surface inspection apparatus and surface inspection method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-267099 2007-10-12
JP2007267099 2007-10-12

Publications (1)

Publication Number Publication Date
WO2009048003A1 true WO2009048003A1 (en) 2009-04-16

Family

ID=40549148

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067733 Ceased WO2009048003A1 (en) 2007-10-12 2008-09-30 Surface examining device

Country Status (3)

Country Link
JP (1) JP5370155B2 (en)
TW (1) TWI473990B (en)
WO (1) WO2009048003A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2264441A3 (en) * 2009-06-17 2011-12-21 Kabushiki Kaisha TOPCON Circuit pattern defect detection apparatus, circuit pattern defect detection method, and program therefor
CN103384822A (en) * 2011-02-25 2013-11-06 株式会社尼康 Inspecting apparatus and method for manufacturing semiconductor device
JP2017535779A (en) * 2014-11-21 2017-11-30 エヌイーシー ラボラトリーズ アメリカ インクＮＥＣ Ｌａｂｏｒａｔｏｒｉｅｓ Ａｍｅｒｉｃａ， Ｉｎｃ． System and method for sensing a remote object
CN120445930A (en) * 2025-05-30 2025-08-08 广东帝尔科技有限公司 Online monitoring and sorting system for flame retardant particle quality based on AI visual recognition

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63168541A (en) * 1986-12-29 1988-07-12 Japan Spectroscopic Co Ellipsometer
JPH01182737A (en) * 1988-01-14 1989-07-20 Yokogawa Electric Corp Double-refraction measurement
JPH10512678A (en) * 1995-08-31 1998-12-02 インフラレッド ファイバー システムス，インク． Handheld infrared spectrometer
JP2004205500A (en) * 2002-12-13 2004-07-22 Canon Inc Birefringence measurement device and birefringence measurement method
JP2004212125A (en) * 2002-12-27 2004-07-29 Canon Inc Birefringence measuring device
JP2005043265A (en) * 2003-07-24 2005-02-17 Yokogawa Electric Corp Optical fiber characteristic measuring apparatus and optical fiber characteristic measuring method
WO2005040776A1 (en) * 2003-10-27 2005-05-06 Nikon Corporation Surface inspection device and surface inspection method
JP2006512588A (en) * 2002-12-30 2006-04-13 アプライド マテリアルズ イスラエル リミテッド Method and system for optical inspection of patterned and non-patterned objects
JP2006250839A (en) * 2005-03-14 2006-09-21 Nikon Corp Surface inspection device
JP2006266817A (en) * 2005-03-23 2006-10-05 Nikon Corp Surface inspection device
JP2006317314A (en) * 2005-05-13 2006-11-24 Nikon Corp Defect inspection equipment
JP2006343102A (en) * 2004-06-16 2006-12-21 Nikon Corp Surface inspection apparatus and surface inspection method
JP2007040805A (en) * 2005-08-02 2007-02-15 Hokkaido Univ Imaging polarization measurement method
WO2007069457A1 (en) * 2005-12-14 2007-06-21 Nikon Corporation Surface inspection apparatus and surface inspection method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282842B (en) * 2005-03-31 2007-06-21 Dainippon Screen Mfg Unevenness inspecting apparatus and unevenness inspecting method

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63168541A (en) * 1986-12-29 1988-07-12 Japan Spectroscopic Co Ellipsometer
JPH01182737A (en) * 1988-01-14 1989-07-20 Yokogawa Electric Corp Double-refraction measurement
JPH10512678A (en) * 1995-08-31 1998-12-02 インフラレッド ファイバー システムス，インク． Handheld infrared spectrometer
JP2004205500A (en) * 2002-12-13 2004-07-22 Canon Inc Birefringence measurement device and birefringence measurement method
JP2004212125A (en) * 2002-12-27 2004-07-29 Canon Inc Birefringence measuring device
JP2006512588A (en) * 2002-12-30 2006-04-13 アプライド マテリアルズ イスラエル リミテッド Method and system for optical inspection of patterned and non-patterned objects
JP2005043265A (en) * 2003-07-24 2005-02-17 Yokogawa Electric Corp Optical fiber characteristic measuring apparatus and optical fiber characteristic measuring method
WO2005040776A1 (en) * 2003-10-27 2005-05-06 Nikon Corporation Surface inspection device and surface inspection method
JP2006343102A (en) * 2004-06-16 2006-12-21 Nikon Corp Surface inspection apparatus and surface inspection method
JP2006250839A (en) * 2005-03-14 2006-09-21 Nikon Corp Surface inspection device
JP2006266817A (en) * 2005-03-23 2006-10-05 Nikon Corp Surface inspection device
JP2006317314A (en) * 2005-05-13 2006-11-24 Nikon Corp Defect inspection equipment
JP2007040805A (en) * 2005-08-02 2007-02-15 Hokkaido Univ Imaging polarization measurement method
WO2007069457A1 (en) * 2005-12-14 2007-06-21 Nikon Corporation Surface inspection apparatus and surface inspection method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2264441A3 (en) * 2009-06-17 2011-12-21 Kabushiki Kaisha TOPCON Circuit pattern defect detection apparatus, circuit pattern defect detection method, and program therefor
CN103384822A (en) * 2011-02-25 2013-11-06 株式会社尼康 Inspecting apparatus and method for manufacturing semiconductor device
JP2017535779A (en) * 2014-11-21 2017-11-30 エヌイーシー ラボラトリーズ アメリカ インクＮＥＣ Ｌａｂｏｒａｔｏｒｉｅｓ Ａｍｅｒｉｃａ， Ｉｎｃ． System and method for sensing a remote object
CN120445930A (en) * 2025-05-30 2025-08-08 广东帝尔科技有限公司 Online monitoring and sorting system for flame retardant particle quality based on AI visual recognition

Also Published As

Publication number Publication date
TW200925587A (en) 2009-06-16
JPWO2009048003A1 (en) 2011-02-17
JP5370155B2 (en) 2013-12-18
TWI473990B (en) 2015-02-21

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