TWI282842B - Unevenness inspecting apparatus and unevenness inspecting method - Google Patents

Abstract

An unevenness inspecting apparatus (1) comprises a stage (2) for holding a substrate (9), a light emitting part (3) for emitting linear light toward a top surface (91) of the substrate (9) on which a thin film (92) is formed, a light receiving part (4) for receiving reflected light from the substrate (9), a wavelength band switching module (5) arranged between the substrate (9) and the light receiving part (4) for switching wavelength bands of light, a moving mechanism (21) for moving the stage (2), and an inspecting part (7) for inspecting unevenness of film thickness on the basis of the distribution of intensity of received light. In the unevenness inspecting apparatus (1), in a case where a selected optical filter (51a) is changed by the wavelength band switching module (5), the inspection of unevenness of film thickness is performed after an influence of an optical characteristic of each optical filter and an influence of the variations in CCD (charge coupled device) sensitivity of line sensor according to the change of a selected wavelength band are corrected on the basis of a correction information corresponding to a selected wavelength band (selected optical condition) which is stored in a storage part for storing a correction information (76) in advance. As a result, it is possible to obtain an unevenness of film thickness with high accuracy.

Description

129. The invention relates to a technique for inspecting a film thickness unevenness of a film formed on a substrate. [Previous Art] When a film such as a photoresist film formed on the main surface of a glass substrate or a semiconductor substrate (for example, only a substrate) for a display device is inspected, light is irradiated with light from a light source. 'Unevenness of the film thickness is checked by the interference of the reflected light of the film and the transmitted light & In the inspection of the film thickness unevenness, when a monochromatic light source such as a sodium vapor lamp is used, the film may not have sufficient sensitivity due to the thickness and refractive index of the film (that is, by light interference). The resulting interference fringes do not appear clearly). Therefore, by visual inspection, the thickness is not accurately detected by changing the incident angle of the light by tilting the substrate. Further, although the substrate is simultaneously irradiated with light of a plurality of wavelengths, the interference fringes corresponding to the respective wavelengths are simultaneously displayed, so that the overall sensitivity may be lowered. According to Japanese Patent Laid-Open Publication No. 2002-26741 (Document 1), in the surface defect inspection device for inspecting defects on the surface of the object, the film characteristics (material, refractive index, Film thickness, anti-radiation rate, etc.), one of a plurality of narrow band filters for limiting the wavelength band of the reflected light of the object, inserted in the optical path, thereby performing on a suitable wavelength band an examination. In addition, it is also disclosed that the angle at which the illumination unit emits light to the subject is changed in accordance with the characteristics of the film (that is, the incident light of the illumination light to the subject 3UXP/invention specification (supplement)/^-(^/95:^07389 6 In addition, according to the disclosure of Japanese Patent No. 33355〇3 (Document 2), the light transmittance of a shadow mask for a color picture tube is not the same. The clothing is centered, and the light is irradiated from the main surface side of the shadow mask side, and the color tone data of the main side of the other side is measured by the median filter (^median filter) smoothing process. Smoothing the data, and calculating the specifications by smoothing the 2 metrics in addition to the color tone data, according to the specification, the shadow mask image that should not be detected under the film thickness unevenness is emphasized. The simplification of the visual inspection and the improvement of the inspection accuracy. However, in the surface defect inspection apparatus of Document 1, since the film thickness unevenness is to be detected with good precision, it is necessary to switch the narrow-band filter to photograph the subject in plural times. However, in a plurality of narrow-band filters, The photon 4 inch of the wavelength band (for example, the uniformity of the space or the uniformity of the thickness) is also slightly different from each other. Therefore, under the switched band filter, the image of the line sensing is known. The shielding characteristics will be slightly different. In addition, the jf is used to sense the phase; the sensitivity of the complex light-receiving components of the f-number will be slightly changed and improved, and the narrow-band filter is switched to make the incident line detectable. The wavelength of the light, Gongai, will also change according to the degree of sensitivity variation of the light-receiving element. "Inspecting the device with uneven film thickness' Generally, the image of the substrate being photographed is applied. The image of the change in the pixel value (luminance value) is in the image (for example, the image processing disclosed in the text 2), and thus is not only caused by the unevenness of the film thickness + the σ pixel value of the image The variation of the pixel value caused by the sensitivity variation of the component is also emphasized, so the film thickness to be detected is not reduced by 312 ΧΡ / flip instructions (supplement) / 95 tear 95·89 7 1282842 sentence: S / N (number / noise ratio) And the film thickness is not reduced, in addition to using the line sensor - The degree of change in the pixel value caused by the degree of variation is reflected in the movement of the sensitization and line sensor in #: y, the stripe parallel to the moving direction, distinguishing this 彳A 1 stripe with uneven film thickness The unevenness is very _ / such stripe and is [invention content] This is suitable for inspecting the uneven thickness of the substrate on the surface of the p, 0 film; uneven film / film body is in Good film thickness unevenness is detected. The emitter device is provided with a light emitting portion that faces the film::=': the light-receiving element receives the film, and the light of the wavelength band of the above-mentioned κιι Outputting an intensity distribution from the main surface and the intensity distribution of the light; switching between the optical condition switching means and the learning condition, and switching the optical strip correction memory corresponding to the specific wavelength band or the optical system state of the sensor to the sensor, It is different for each light-receiving element of the above sensor. a complex correction information associated with the plurality of optical conditions; and an output correction unit that selects, from the plurality of correction information, the two dimming elements associated with the optical condition selected for the upper optical condition switching means To correct the poor news, according to the above correction information, 'correction' from the above sensor. In this way, the thickness unevenness can be detected with good precision. According to a preferred embodiment of the present invention, in the film thickness unevenness inspection device, the light exiting light emits light including light of a plurality of wavelength bands, and the optical condition changing means includes: a plurality of filters; The light transmission of the plurality of wavelength bands is allowed to be respectively; and the filter switching mechanism is in the above-mentioned plural 312 χ ρ / invention manual (supplement) / 95 _ 〇 浙 3 3 89 8 1282842 i i, The optical illuminator disposed from the light emitting portion to the sensor is switched to another filter, whereby the plurality of optical conditions are changed to include the respective wavelengths of the plurality of wavelengths as the specific wavelength band. Optical conditions. In another preferred embodiment of the present invention, the film thickness is unevenly detected (4), and the optical condition switching means is described, and the light-emitting portion from the wide-area front piece and the polarizer moving machine 2: h are applied to the above-mentioned sensor. a position in the optical path, f between the positions of the optical paths, and moving the polarizer; wherein h μ 3 has a ~ arrangement; an optical condition corresponding to a state of 6 in the optical path; and Retreating from the optical conditions corresponding to the above polarizer under the above-mentioned optical path. The other embodiments of the present invention are different from the Φ Μ Μ 射 部 可 可 可 可 可 可 可 可 可 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 复 Φ Φ Φ Φ Φ Φ The specific wavelength band is changed by the wavelength band of the light of the cut:::::; the above-mentioned member includes optical conditions in which the respective complex wavelength bands are the specific wavelengths τ described above. In the application of the present invention, the film thickness unevenness inspection device further includes a moving mechanism 'on the predetermined movement (four) along the main surface of the substrate to make the upper (four) holding portion relative to the light emitting portion and The light emitting portion of the sensor includes: a light source; and an optical system that converts light from the light source into a line shape perpendicular to the moving direction: Ά toward the main surface, the sensor is line sexy The detector is synchronized with the movement of the squatting portion, and repeatedly obtains the above-mentioned specific wavelength band after the glare is reflected on the substrate 312XP/invention manual (supplement)/95_〇6/95 〗 07389 9 1282842 The intensity distribution of light. In another case of the present invention, in the film thickness unevenness inspection device, the correction information acquisition phase acquisition unit for correcting the information of the complex correction is obtained, and the following steps are performed: === Under the environment, the light is emitted by the light emitting portion, and the light is emitted by the above-mentioned sensor, and the light of the specific wavelength band is received by the sensor, and the plurality of outputs are output; according to the above complex output, In the upper part of the device, the pure input of each of the light-receiving elements is converted into a step correction corresponding to the exposure amount, and the step of obtaining the above-mentioned complex output is performed repeatedly for each of the plurality of conditions. Steps to correct the steps of the information. In another application of the present invention, in the film thickness unevenness inspection device, a further moving mechanism that moves the holding portion with respect to the light emitting portion and the sensor on a predetermined movement along the main surface of the substrate The light emitting portion includes: a light source; and an optical system that converts the light of the light source into the main surface that is guided to the moving side, and the sensor receives the surface from the second surface element: =, : The light of the specific wavelength band; the optical strip is changed, and the wavelength band of the light received by the sensor is synchronized with the above-mentioned sensor in synchronism with the above-mentioned sensor, thereby describing the characteristic wavelength band The plurality of optical conditions include optical conditions in which the respective plurality of wavelength bands are the specific wavelength bands. Both::: can also be applied to the film thickness of the film formed on the substrate is not 312 ΧΡ / invention manual (supplement) / 95-〇6/95ι〇7389 10 1282842 ^ purpose and other purposes, features, aspects and Advantageous embodiments of the invention will be described in detail below with reference to the drawings. [Complex] A film thickness unevenness inspection device of the film thickness unevenness inspection device i according to the embodiment of the present invention is shown in Fig. 1; In a glass substrate (hereinafter simply referred to as a substrate) 9 used in a display device such as a liquid crystal display device, the film thickness for forming a pattern formed on one side 91 (hereinafter simply referred to as a film) is not All. The film 92 on the substrate 9 is formed by applying a photoresist on the upper surface 91 of the substrate 9. As shown in Fig. 1, the film thickness unevenness inspection apparatus 1 includes a stage 2 and an element holding portion for guiding the main surface 91 (hereinafter simply referred to as "light = 91") formed by the film 92 to the upper side (Fig. 1) The substrate 9 is held in the middle (1) side, and the first emitting portion 3 emits light toward the substrate 2; the light receiving portion 4 receives the upper surface 91 of the light emitting portion 5 The light reflected on the pancreas 92; the wavelength band switching mechanism V is connected between the matching substrate 9 and the light receiving portion 4, and the wavelength band before the fork is used; the movement is _2, and the (four) is: the first two wavelength band switching mechanism 5 and moving the stage: :7, according to the intensity distribution of the light received by the light receiving unit 4 (on the bank; : 8 area, cloth), checking the film thickness unevenness of 臈 92; and 邛 8, its control The composition of these. Preferably, the surface of the (+Ζ) side of the completion stage 2 is 21 ^ (^ ^ ^ ^ ^ ^ ; 2 ;; ^ ° to rotate the motor 211 so that the stage 2 is along the guide 212, Moving along the substrate 9 in the χ direction of Fig. 1 of the upper 312XP/invention specification (supplement)/95-06/95107389 1282842 surface 91. The light emitting portion 3 is provided with a guillotine lamp 31 as a light source, which emits, The light includes all the wavelength bands in the visible field; the cylindrical cup 32' extends in a direction i " direction perpendicular to the direction of movement of the stage 2; and the cylindrical lens 33 extends in the gamma direction. The =3 medium lamp 31 is mounted on the quartz rod 32 (the end of the coffee, • the light incident on the quartz rod 32 by the prime k 31 is converted into a linear light extending in the γ direction (ie, the 'beam profile becomes The linear light extending in the γ direction is emitted from the side surface of the quartz rod 32, and is guided through the cylindrical lens 33 to the upper surface of the substrate 9. In other words, the 'quartz rod 32 and the cylindrical lens μ become an optical system, which will come from the gull light 31. The light is converted into linear light ' perpendicular to the moving direction of the stage 2' and guided to the substrate 9 91. In FIG. 1, the optical path from the light emitting portion 3 to the substrate 9 is indicated by a dotted line. The optical path of 9 to the light receiving portion 4 is also the same). A portion of the > light emitted from the light emitting portion 3 is reflected on the upper surface of the upper surface 91 of the substrate 9 on the side of the film 92 (+Z) (hereinafter referred to as "the upper surface of the film"). Since the film 92 is translucent to the light from the light emitting portion 3, the light that is not reflected on the film 92 from the light from the light emitting portion 3 passes through the film 92 and is on the upper surface 91 of the substrate 9 (that is, below the film 92). reflection. In the film thickness unevenness inspection apparatus 1, the interference light (hereinafter, simply referred to as reflected light) of the light reflected on the surface of the film 92 in the substrate 9 and the light reflected on the upper surface 91 of the substrate 9 is incident through the wavelength band switching mechanism 5 To the light receiving unit 4. The wavelength band switching mechanism 5 includes a complex filter (for example, an interference filter having a half-value width of 10 nm) which selectively allows a plurality of narrow wavelengths 3 GXP/invention specification (supplement)/95· 〇6/951〇7389 12 1282842=Different light transmission; disc-shaped stroking wheel... it maintains a plurality of filters: and filter, light 11 rotation motor 53, which is mounted in the filter wheel 52: 'make> the light wheel 52 rotation. The filter wheel 52 is disposed such that its normal direction is parallel to the optical path from the substrate 9 to the light receiving portion 4. 2 is a view of the wave viewed from the side of the substrate 9 in the direction perpendicular to the filter wheel 52. As shown in Fig. 2, six circular openings 52 are formed at intervals of the circumference of the two temples. Among them, five openings 521 are provided with five kinds of filters 5ι having different transmission wavelengths. = In the wavelength band switching mechanism 5 shown by the control unit 8, the day of the control of the control unit 8: the Okayama Hiroshi motor 53' rotates the filter wheel 52, and the five irradiators 51 The film thickness and the refractive index of 92 are selected as one of the filters 51 (hereinafter, in order to distinguish them from other filters (1), the center of the light is selected from the light source 51a), and the light is arranged on the substrate 9 to In this way, the reflected light from the substrate 9 (i.e., the white reflection f corresponding to the light of the five wavelength bands corresponding to the five filter 'ops 51) is only corresponding to the optical path. The selected filter, the light of the characteristic wavelength band of the optical device a can be transmitted through the selection filter, and guided to the light receiving portion 4. Then, the filter roller 52 is rotated by the chopper to rotate the filter wheel 52 at the complex filter 51. Among them, the selection filter 51a disposed in the optical path from the light emitting portion 3 to the light receiving portion is switched to the other filter 51, and the wavelength band of the light received by the receiving aperture 4 is changed (that is, the wavelength is selected) The two-light rotary motor 53 and the filter and the light wheel 52 are connected to the filter. In addition, the wavelength band switching machine 5 can be called optical condition switching machine 31: 2XP / invention said duck (supplement) / 95-_5 assisted 1284842 structure, hunting between the complex filter 51 switch selection filter 5ia, so as as the film thickness The selected wavelength band of the associated optical conditions is switched between the transmission wavelength bands of the complex light of 51. The light receiving unit 4 is provided with a line sensor 41 as a CCD of the light receiving element (Charge C〇upled DeviceWQ upward Arranged in a straight line; 2 by a lens 42, which is disposed between the in-line sensor 41 and the selection filter 51a in the wavelength band switch = 'will reflect the light guide from the substrate 9, the sensor 4 line sensor 4, the linear light emitted from the light emitting portion 3 and reflected by the film 92 in the irradiation region on the substrate 9 receives the selected wavelength band of the transmission == illuminator 51 & and obtains the received optical knives (ie, 'from each CCD The output value is distributed in the γ direction. The array is provided with an output receiving unit 71 that accepts the line value from the line: 隹4: the output value of each (10) from the line sensor 41) And, the rounding correction unit 72 receives the output from the line sensor 41 = A value). In the film thickness unevenness inspection device 1, the intensity distribution of the reflected light transmitted through the line sensor 419 is simultaneously transmitted to the side of the substrate 9, and the second-order image of the inspection portion is used. Output correction unit: The output of 91 41 on the upper surface of the substrate 9 and the peak & ρ correction from the line sensor. The 2-dimensional image with H is provided. The inspection unit 7 further includes a processing unit 73 that performs complementary image processing on the second-order image that has been corrected by the rotation correction unit (that is, the strong Wei-Wei-peripheral pixel value difference is from the emphasized processing 2 Each pixel of the secondary image == 3] 2XP/Invention Description «:(Supplement)/95_06/95】〇7389 】々1282842 Thickness unevenness. Green part 7 further has: Correction information acquisition unit 75, which is right (That is, each of the (10)' acquisitions is associated with the above complex optical conditions: the vehicle, the transmission wavelength band of the complex filter 51 in the switching mechanism 5), the third of the corrections, and the correction information memory. The portion 76 is the complex correction information obtained by the positive acquisition unit 75. The complex correction information stored in the L-Beiyi memory unit 76 is a quadratic function, and the CCD for the line:: state 41 is included in the ccd (10) The output value (hereinafter referred to as "input pixel value") of the sensitivity change is converted into a pixel value corresponding to the actual exposure amount in the ideal (10) without sensitivity error (hereinafter referred to as "corrected pixel value"). The output handle is the front portion of the towel, which is stored in advance from the correction information storage unit 7 The complex correction information of 6 is selected, and the correction information of each CCD associated with the optical condition selected by the wavelength band switching mechanism 5 (i.e., "selection wavelength band") is selected, and the output from the line sensor 41 is corrected based on the correction information. The process of checking the film thickness unevenness by the film thickness unevenness inspection apparatus 1 is shown in Fig. 3 and Fig. 4 showing the μ private map inspected by the film thickness unevenness inspection device 1. The substrate thickness inspection device 1 inspects the substrate. 9 When the film thickness of the film 91 on the upper surface 91 is uneven, first, after the substrate 9 is held on the stage 2 at the inspection position shown by the solid line in FIG. 1, the substrate 9 and the stage 2 start to (+X). The direction is shifted (step S11). Then, the linear light is incident on the upper surface 91 of the substrate 9 at an incident angle of 60. The linear light is incident on the upper surface 91 (hereinafter referred to as "linear". The irradiation region "°) (step S12), the linear irradiation region moves relative to the substrate 9. 312XP/Invention Manual (Supplement)/95-06/951073 89 15 1282842 Light from the light emitting portion 3 is reflected on the substrate 91 91 , through the selection filter 5a of the mechanism 5, thereby only Light of a specific wavelength band (for example, a center wavelength of 55 〇 nm and a half-value width of 1 〇 11111) is guided to the light receiving unit 4. In the light receiving unit 4, the line sensor 41 is received by the upper surface 91 of the substrate 9 Selecting the wavelength band light (step Si3), and obtaining the intensity distribution y of the reflected light from the linear irradiation region on the substrate 9 in the selected wavelength band, step S14). The input pixel values from the CCDs of the line sensor 41 are received by the inspection unit 7 and accepted by the output accepting unit 71 (step positive). In the film thickness unevenness inspection device 1, the control unit 8 repeatedly checks whether the substrate 9 and the stage 2 have moved to the two-point key line in Fig. i = the end inspection position during the movement of the substrate 9 (step _, has not moved to When the end position is checked, the process returns to step S13, and the light of the selected wavelength band of the reflected light is repeatedly received, and the intensity distribution of the light of the selected wavelength band on the linear irradiation region is repeatedly obtained, and the input receiving unit 71 repeatedly receives the input pixel value ( Step su~ Magic 5) In the film thickness unevenness inspection device i, when the stage 2 is moving in the (+χ) direction, the operations of steps S13 to S16 are repeated, and the movement of the stage 2 is repeated in synchronization with the movement of the stage 2 The intensity distribution of the reflected light from the linear illumination region on the substrate 9 is such that the intensity distribution of the reflected light from the upper surface 91 on the entire substrate is selected. / Then, when the substrate 9 and the stage 2 are moved to the end inspection position (Step S16), the movement of the substrate 9 and the stage 2 by the moving mechanism 21 is stopped, and the irradiation of the illumination light is stopped (step S17). The output receiving unit 71 of the inspection unit 7 arranges the line sensor in time series. 41 and save At the output of the output receiving unit 71, a second dimension 312XP/invention specification (supplement)/95-06/95107389 16 1282842 of the entire upper surface 91 of the substrate 9 is generated, that is, before the correction obtained by the line sensor 41 is Original image ".) (Step δ2 υ. The image is hereinafter referred to as the original image, and the CCD is obtained from the remedy of the remedy of the remedy of the remedy.) 】Long CD hard number correction information, by output correction department = state 51 a choice of grip, ancient and book heart day and day gentry, k release / consider light selection correction information;: = correction information. Then, according to The correction of the selected element (that is, the correction of the phantom lamp 31, selection, and shadow in the image from the line sensor 4^ read (for example, the effect of the CCD variation of the color shop f) % or less, that is, 2 colors m J , and the corrected image is generated (step S22). In addition, after obtaining the correction information, please read the following: '"The image after correction and correction is displayed on the screen. Device = Cheng:: The crotch part 73 emphasizes the difference between the film thickness change and the buckwheat Image processing (for example, by translating the median chopper to smooth the smoothing process, and then smoothing the image, and subtracting the pixel 2 of the image from the corresponding pixel value to remove the ratio The film thickness variation is caused by the large and full processing of the == to generate the emphasized image (the step is called the emphasis on the screen, etc. 'further' the thickness of the inspection portion 7 is unevenly measured 4 74 according to the emphasized image detection film Thickness unevenness (step 4) Fig. 5 shows the relationship between the film thickness and the reflectance of the film formed on the upper surface 91 of the substrate 9. Line 101 in Fig. 5 indicates the inverse of light 312XP/^ for a wavelength of 55 〇 nm. Mmmm/95^06/95107389 17 1282842 The film's wavelength is changed as the wavelength is changed. The relationship between the amine and reflectance of j is also changed. Figure 5 is not 'M 92 film thickness is different when film 9 is therefore connected to the line sensor 41 is different, ll ^ is connected The intensity of the reflected light is also different. Therefore, in the film thickness distribution of the film 92, there are two times in the case of unevenness (the fairyness), on the substrate 9 generated by the inspection of the mouth P7. The original sound on the original image, the corrected image, and the emphasized image is not spread „ ^ ^ The pixel value is also uneven. The film thickness is unevenly detected.

In the device 1, the inspection portion 7 φ is JJ ^ A 丨 (the pancreatic thickness unevenness detecting portion 74 in the middle, and the 杳夂^ value ^ above 91 emphasizes the degree of unevenness of the image, and there is a limit of unevenness in the presence of unevenness In the case where the value is larger, the detection determines that the upper two domains have uneven film thickness exceeding the allowable range, and the reflectance of the film 92 is as R & period change. Fig. 6 shows that the figure 9 is not 'For the change in film thickness, the ratio of the cycle rate is #, and the thickness of the boat is only 1 nm. The reflection rate is loved. As shown in Fig. 5 and Fig. - 杌丨 ^ ^ Q 6 is not, near the maximum reflectance In the vicinity of the minimum point, the reflection of the micro-throat sheep is very small for the change of the film thickness. Therefore, the 'the thickness of the boat is slightly changed, and the pixel value of the second-order shadow generated by the knowledge-inspecting unit 7 is hardly changed. Ra lL攸/ ^ 兀~Jiakou This ~ low film thickness unevenness detecting portion 74 detects uneven thickness of the moon fruit (that is, the film thickness becomes heavier).. ^ 勒) The sum of the degrees. Hereinafter, the ratio of the reflectance fluctuation to the film thickness variation is not rounded. The area of the small film thickness of the rain is called "the low-sensitivity area. If the film thickness of the film 92 on the substrate 9 is small, it is difficult to control the thickness of the film according to the line 1G1", and the film thickness is uneven. Therefore, the film thickness is In the unevenness inspection device 1, 3, 2 along/invention specification (supplement)/95-06/95107389 as described above, with one filter 51 as the selection 18 1282842 filter, optical device 51a and 篦〗; After the person detects the unevenness of the pancreas (step S25), the control: 8 drives the chopper rotation motor 53 of the wavelength band switching mechanism 5 to rotate the filter and the light wheel, and arranges the other filter and optical device 51 from the substrate 9 to The light receiving unit 4 can change the selected wavelength band S251 in the wavelength band switching mechanism 5, and the alternate wavelength band also moves the film thickness low sensitivity region. Thereafter, the stage 2 is returned to the inspection by the moving mechanism 21. At the position, the stage 2 is moved again (step S11). The film thickness unevenness inspection device 1 reflects the light from the light-emitting portion 4 to the substrate 9 by the light-receiving portion 4 before the load port 2 reaches the end inspection position. In the light, the selected wavelength band light which is different from the first film = unevenness & test 4 is received, and the movement of the stage 2 is the same. Then, the intensity of the reflected light from the linear irradiation region on the substrate 9 is repeatedly taken and transported to the inspection unit 7, and then the movement of the stage 2 is stopped (steps S12 to S17). After that, the output receiving unit 71 of the inspection unit 7 The upper surface of the substrate 9 is formed as S21)', and the rounding correction unit 72 corrects the original image based on the correction information previously stored in the portion 76 and then corrects the original image. Then the 'emphasis processing unit 73 performs the corrected image= Processing to generate an emphasized image (step coffee, film thickness unevenness in the film thickness unevenness detection film thickness unevenness (step ^ - under and ^ "2 film thickness unevenness detection (step s25), according to 1 4 music 2 times of the test results, the final detection of the film 9 on the substrate 9 film 9 2; ^, && 士 y into ~, : and,, Ό bundle using the film thickness unevenness inspection device} who Detection of thickness unevenness of the 仃 plate. Incoming film thickness unevenness inspection device, a plurality of wavelength band switching mechanisms 5 遽 312XP / invention manual (supplement V95-06/95107389 } 9 J282842 Between the cut * f thick low sensitivity area in the first film thickness unevenness test case select wavelength band, In this way, the film 92, :f is not uniform in film thickness == (or all), even if it is included in the -f f region of the first amplitude, because of the second film thickness unevenness detection: If the measurement is not included in the second test, =:: the same as the 'good perception test', the thickness of the film is uneven. Next, explain the use of the film thickness unevenness inspection device 〖 7 how to take the mediation τ - under the South is poor Waiting for the poor news, as shown in Figure 7. Dawning to the mirror held on the stage 2 (Machine shot according to the output of the salty substrate from the reflected light reflected by the receiving_ to obtain the correction: sensor 4] The acquisition unit 75 searches for the steam of the positive information 3 = the table does not use the correction information 陬, and the Λ Λ Λ 。 。 。. In the case of obtaining the correction of the capital, the 'I-first' is held on the stage 2 instead of the substrate on which the film 92 is formed (step S31), and then the unevenness is the same, the mirror 90 and the stage - the step = The "scatter (four) x) direction movement shown in Fig. 8 and Fig. 9

Uiffuser)", please describe later). Next, in a state where the mirror 90 is held on the stage 2, that is, in the environment where the film thickness unevenness is affected by the film thickness, the light emitting portion 3 is emitted (Niu Cong S33). The linear illumination area on the main surface 901 of the 兄 兄 反射 反射 is reflected on the mirror 90, and the selection filter of the wavelength π switching mechanism 5 is guided to the light receiving unit 4. The light receiving unit 4 receives the selected wavelength band light by the line sensor 41 (step s(4), 3i2XP/invention specification (supplement)/95-〇6/95ΐσ7389 20 1282842 and from π π (step coffee), the opposite of the irradiation area (4) ^ μ,,, ,, ±%%, through the line sensor 41 to shoot the linear irradiation area. Sexual salty crying ^ between the 'that is, from the linear illumination area reflected light on the line crying ': 1 exposure The time is set to 1 m sec. From the line sexy measurement; the material ":: 1 (hereinafter, in order to distinguish it from the "average output" described later, it is connected, ☆ [bull rained out") is sent to the inspection unit 7 The output accepting unit 71 is spliced (step S36). The shot taken by 41 determines whether or not the line sensor has arrived (i.e., the number of times the reflected light intensity distribution is obtained). Set the number of times.) (When the step and the load △ m reach the set reading, the phase step coffee, the domain and the powder stop private support synchronously and repeatedly obtain the output from the mirror 90 on the line-shaped irradiation area ~ two intensity distribution' and the line is sexy The temporary output of the device 41 is accepted by the hook portion 71 (steps S34 to S37). The film thickness unevenness inspection device 1 In the case, the online sexy sensor 41 is warmed to a condition of 1 msec, in other words, for linear i, another J to 41 is exposed to the sun, and the lens is 1 ^ moving mirror 9. One side is determined by two:: two cases The amount of exposure, - the temporary infusion of the edge "takes (four) the output of the sensor 41, then = 2 = 7 = a shape of the first image (1) (step S38). The second moment pixel number is equivalent to linear ❹彳Crying 41 φ6.../Silence in the Y direction of 111 (4) Number of (10) in Hanshin 41, and X direction 1 107389 1282842 After the first image 11! is generated, the control unit 8 shown in Fig. 7 judges In the form, 10 pieces of correction information are obtained (step S4). It is necessary to obtain the exposure time of the next image day ±, = = image sensor 4 (step S4 (1), then return: step: = The number of times of sexuality is repeatedly obtained from the second image 112 (step film thickness unevenness: check device) from the secret device S34^S38) 〇® 1G, the exposure time of the line sensor 41 is from 1 in sec to 1 0 mspr 1 m ^ The eC is changed by 1 m sec (steps S41 and S41H. The amount of exposure of the line sensor 41 is changed while the image is repeated =! The first image U to the first image 12 对应 corresponding to the exposure amount at each exposure time is sequentially generated (in the step / the unevenness inspection device 1 - the side is at a low speed (for example, 2 to 3 mm movement) ': By receiving the reflected light from the mirror 90, the image is generated by the younger 1G image 12G. Therefore, even if a defect Γ = Γ is attached to the mirror, the influence of the poor reflected light caused by such a defect can be suppressed. When the first! After the image (1) to the fourth image are completed, the moving mirror (10) and the stage 2 are stopped and the illumination light is stopped (step S42). Then, the correction information acquisition unit 75 of the inspection unit 7 outputs a value (that is, the number of 'equivalent setting times) corresponding to each CCD of the line sensor 41 in each of the first video images 1 to 120 ( That is, the pixel value is averaged to obtain an average output value. In other words, the exposure amount obtained by the correction information acquisition unit 75 for each exposure time of 1 m sec to 10 m sec is determined by 3ΠΧΡ/invention specification (supplement)/95·〇6/95ΐ〇7389 22 1282842 from the 2 sensor 41 The temporary output obtains the most average output corresponding to each exposure amount (i.e., the set of average output values from each ccd) (step M3). After the exposure time i m sec to 1 〇 m sec is obtained from the field, j 1 〇 and the average output are obtained, and the relationship between the exposure and the average output value is obtained for each CCD in the line sensor 41. In the figure, for i cCD, the relationship between exposure 1 and the average output value from the CCD is shown. In the figure, the point 131 of the complex number indicates the average output value at each exposure amount. Line 132 is a secondary approximation curve showing the relationship between the exposure amount and the average output value, and the following is called "approximate curve 132". When the approximate curve 132 is obtained, only the upper limit value shown by the line 133 of the figure ( (the ratio of the change in the average output value to the change in the exposure amount is sharply reduced, for example, in the total gradation tone number 8 bits is 24〇) and line 134 = no lower limit (for example, the boundary value of the ratio of the noise (n〇ise) included in the average output value is larger than the mean value of the total tone gradation number 8Μΐ). Both output values. In the correction information acquisition unit 75 (see Fig. 7), the average output value between the upper limit value and the lower limit value is approximated by the least square method, and the approximate curve 132 is obtained. Then, the correction information acquisition unit 75 appropriately converts the scale of the exposure amount on the horizontal axis of the approximate curve 132 into the corrected pixel value ′, and normalizes the approximate curve 13 2 , and finally obtains the representative correction as shown in FIG. 12 . The normalization curve 135 of the relationship between the pixel value and the average output value of each CCD (step S44). At this time, since the slope of the normalization curve 135 is normalized by 45 degrees, in the normalization curve 135, the maximum value and the minimum value of the corrected pixel value are approximately equal to the average output value of 312XP/invention specification (complement) ()) /95-06/951073 89 23 1282842 Maximum and minimum values (upper limit 133 and lower limit 134 in Figure 11). After the normalization curve 135 is obtained, the complex point 136 used for the normalization curve 135 is obtained (that is, corresponding to the IV of the normalization curve 132, the upper limit i and the lower limit of FIG. 11 used) A point 131 between the limiters is obtained as a residual between each point 13 6 and the normalization curve 135. Then, there is a residual value that is greater than the predetermined residual limit value (for example, up to 5 gradation tones in the 8th bit of the total tone tone number), and the average output value is removed. Again, the remaining :::= is approached by the least squares method. In this way, the correction information for each CCD in the linearity can be obtained from the value of 固(1) to the exposure amount corresponding to ccd, and is obtained as shown in the equation (1). In step S45), the 衣fe clothing corrects the poor memory unit 76 (step S46). (1)y (1) (1)+Αη(ι,2)·χ(ι)2··· The coefficient An(i,k) in Equation 1 (k: ^Your positive pixel value is (4) fine pure. (1)=Value=Addition The pixel value is converted into a corrected pixel value. Fortunately, in the correction of the original image to generate the complement I S22), the correction information is used, and the pixel value corresponding to the corrected image is used in the shoulder map 4' step J·). The pixel value is X (i, the equation shown by equation (3), from the pixel of the original image ^), and the pixel value Y(i, j) of the image (2) or image is transmitted. The equation (2) and the equations (3) and (1, J) obtain the correction image corresponding to the image symmetry of the ith CCD, and the 丨^1 is the same as the equation (1). ] Then move on the line sensor 41 312XP / invention manual (supplement) / 95 · 〇 6 / 95107389 24 1282842 The direction indicates the pixel of the jth column. Y(i, j) = An(i,〇)+ An(i " · Yr. ·,, J)2· · • (2) ...1)·...,...Αη(1,2)·Χ(1, Y(l5 j) = I(An(i5k)*X(i5jy η (3) 2:: According to the complex average output from the line sensor 41, pairing = filter 51 (ie, selecting the light The device 51a) determines that the rounded pixel value of each CCD in the two sensors 41 is converted into a correction coffee 8 (4) switching mechanism. If the correction information has been obtained (step S47), Y, 1" has not yet been obtained. Under the correction information, the filter 51 is changed to the next filter 51 (step S471). Then, the process returns to step S32 to start moving the mirror 90 and the stage 2, and The illumination light is started to be irradiated, and then the intensity of the reflected light from the linear illumination region on the substrate 9 is repeatedly obtained by the line sensor 41 and the movement of the stage 2, and the line sensor 14 is taken from the line sensor 41. The output is sent to the output accepting unit 71 to generate the first image ΐn to the tenth image=〇 (see FIG. 10) (steps S32 to S41, S411). Then, the movement, the brother and the cargo port 2 are stopped, and the illumination is stopped. Light, correction information acquisition department 75 is taken from the 10 average outputs corresponding to the exposure amount at the exposure time of 1 m sec to 10 m sec, and further, for each CCD ' in the line sensor 41, is used to input the input pixel values from the respective CCDs. Converted to the correction information of the corrected pixel value, and finally, it is memorized to the correction information memory unit 7 Steps S42 to S46) 〇25 312XP/Invention Manual (Supplement V95-〇6/951 〇73 89 1282842 (4) Measurement = 41 丨In the middle, all the filters 11 51 obtain the complex average output from the line == to obtain the correction information, and the target 2: the Wei memory unit 76' completes the acquisition of the corrections with the respective choppers 51 = (step S47) In addition, it is used to correct the pixel value of the ablation in each (10) from the line sensor 41 in the correction information receiving port "

Sis:; (1) The shape of the formula (4) ^ /, ϋ pre-dish input pixel value and the corrected pixel value, and a comparison table, the comparison table as a supplement, positive information memory unit 76 . ‘U in the complement r ::: 裹 裹 裹 1 — ′ when the correction information acquisition unit 75 takes a :: poor signal, a scatter plate can be used instead of the mirror 90 shown in FIG. 7 . "Bottom" light emitting portion 3 irradiates light onto the stage held by the stage 2 = Acquires correction information based on the output of the line sensor = reflected by the reflected light reflected on the scattering plate. The process of obtaining the correction information When the mirror 90 is used (see Figs. 8 and 9), the film thickness unevenness inspection device ι = the correction information obtained by using either of the transmission mirror 90 and the diffusion plate can check the film thickness unevenness. In particular, when the film thickness unevenness of the substrate 9 on which the film 92 having a relatively large surface is formed (for example, the film 92 having a ratio of the scattered light included in the light reflected on the substrate 9 to the regular reflection light is (9) or more) is uneven, In addition, the correction information obtained by the scattering plate is used to check that the film thickness unevenness can be detected with good precision. In addition, the film 92 having a relatively smooth surface is formed (for example, the scattered light light included in the light reflected on the substrate 9) The ratio of the specular reflected light is less than (9) 312XP / invention manual (supplement) / 95-06 / 95107389 26 1282842 month US 9 2) the substrate 9 of the film 戸 ij person correction information to check, more ^ ^ through the mirror 90 The obtained b-tower awareness detection film thickness is uneven. As explained above,膜 膜 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Register f, correct the Bayesian memory unit 76. The bran is changed by the wavelength π switching mechanism 5, and then the selected light of the chopper 51a and the lens 1 is selected as follows: the lamp 31, == is changed with the selected wavelength band And the linear two: the total '1' and the meaning of the difference 'according to the selected wavelength band (ie, the selected optical condition) corresponding to the vy of the selected part of the amine sounds Then, 'the film unevenness (4) device is inspected by checking the n-material unevenness detecting portion 74, because the output correction portion 72 is divided by: the light shielding property caused by the shielding property of the system is better; Γ'—When changing the choice of chopper 5ia—the side can be 'by _ ratio (signal/noise ratio)) to detect the film is 'at the time of generating the corrected image, because it does not produce linear=Yi 41 CCD sensitivity variation The resulting streaks can also detect stripe-like film thickness unevenness at a good 4 degrees. In the film thickness unevenness inspection device 1, the light emitting portion 3 emits linear light, and the 22 detector 41 receives the reflected light from the substrate 9 moving in the vertical direction 9 in the incident direction in synchronization with the movement of the substrate 9. Light-to-substrate 丨: The angle of incidence is maintained on the upper surface of the upper surface 91. Thereby, when the film thickness is uneven, it is not necessary to consider the influence of the incident angle on the reflectance, and thus the detection processing of the film thickness unevenness can be simplified. Further, the linear 312 ΧΡ / invention specification (supplement) / 95-06 / 95107389 27 1282842 The sensor 41 receives the reflected light from the substrate 9 to detect uneven film thickness, because even if the substrate 9 is not translucent, The film thickness unevenness can also be appropriately checked. Further, (the light from the light emitting portion 3 is inclined and irradiated to the substrate) can be avoided. The light exiting the field portion 3 and the light receiving portion 4 are close to each other, causing the incident side and/or the side light to have a private weight of $, thereby preventing light from being emitted. The portion 3 and the acceptance and arrangement become complicated. ^ In the film thickness unevenness inspection device 1, the approximate curve 132 indicating the relationship between the exposure amount and the average output value from the CCD is normalized, and the prime value and the average output are obtained. The normalization curve 135 of the relationship between the values is further obtained by changing the input pixel value from ccd to the corrected image of the corrected image to make it visible from the original image. Under the ΐ::, 75, in the environment that is not affected by the uneven thickness of the film, and can properly obtain correction information. In addition, under the line meal:: two exposures, from the line sensor 41 Reclamation, out of the average output 'according to the average loss of 2 = high correction information accuracy. Further - step, Lee: two positive capital = holding the mirror 9fl or the scattering plate instead of the substrate 9, can be easily taken (four) then ' In the second embodiment of the present invention, the opening and closing of the gland can be made. It is to be noted that the 13-part partially enlarges the side view of the light-emitting portion 3a in which the film thickness of the second embodiment is not in the case of a clothing, and the 1M sorrow film thickness unevenness detecting mechanism 5 is the same as 0. 1 is omitted from the wavelength band structure 5... The light emitting portion % is provided instead of the light emitting portion 312XP/invention specification (supplement)/team 〇6/95] 07389 28 1282842. The other components are the same as in Fig. 1 'in the following description The same symbol is attached. ^ As shown in Fig. 13, the light source emits two light source elements 31a and 31b having light of mutually different wavelength bands on the side of the quartz rod 32 (+Y) (for example, a semiconductor such as a light-emitting diode) The light-emitting element is replaced by the self-priming lamp 31 in the two-out part 3 shown in Fig. i. The film thickness unevenness in the second embodiment is controlled by the control unit 8 controlling the light-emitting portion 3a. The light source elements 31a and 31b are configured to enable linear light beams of mutually different wavelength bands to be emitted from the light emitting portion 3a. In other words, the control unit 8 is an optical condition switching mechanism, and f is switched between the light source elements 31a and Jane. The bright diaphragm "changes the wavelength band of light emitted by the light emitting portion 3a to change the acceptance of the light portion 4 In the wavelength band (i.e., the wavelength band is selected), the selected wavelength band which is an optical condition associated with the film thickness unevenness inspection is switched between the optical wavelength bands of the plurality of light source elements 31a and 31b. The machine for checking the thickness unevenness of the thickness unevenness inspection apparatus is similar to that of the first embodiment, and will be described below with reference to Figs. 3 and 4. First, the substrate 9 and the stage 2 are moved, and then only the light source is turned on. The linear light corresponding to the wavelength band of the light source element 31a is emitted from the light emitting portion 3a, and is irradiated onto the linear irradiation region on the substrate 9 (steps S11 and S12). The light emitting portion 3a is emitted from the light emitting portion 3a. The light is reflected on the upper surface 91 of the substrate 9 and received by the line sensing element 41 in the receiving aperture, and then the intensity distribution from the linear irradiated product or the reflected light in the remote selected wavelength band is obtained, and finally the output in the inspection unit 7 is obtained. The accepting unit 71 accepts (steps S13 to S15). Then, in synchronization with the movement of the cargo port 2, the linear irradiation region 312XP from the substrate 9 is repeatedly obtained. The invention is a supplement (replacement)/95 Gu 951 milk dip 1282842 ^ ^ ^ A 5, J « ^ ^ 2 .-jit ^ ^ i # £ ^ In step S16), take the - bit 罝 as the intensity distribution of the long band (step the S13 ςικ surface 91 to reflect the movement of the wave stage 2, and Γ μ 16). Thereafter, the substrate 9 is stopped and the original image is generated (step S1V; S=), and the illumination light is outputted by the output receiving unit 71 in advance by the correction information section, and the selection and selection waves are selected in the state of the state. Find the number of 76 corrections (including the wavelength band) related to the second: V: coffee correction information, the original image of the H part 72 according to the selected S22). Then, it is emphasized that Lu ¥: prime correction produces a corrected image (steps generate strong Jun 2 King. 卩 73 emphasizes the correction of the corrected image and Wang draws the emphasis of the scene > like, the most German line j - owe < _ P and the pre-sentence detecting unit 74 detect the thickness unevenness of the 1/person based on the emphasized image (steps S23 and S24). When the unevenness detection is completed, the control unit 8 causes the light source element to be long ( Steps S25, S25]), 哉礼人. ^ Zen wave carries out the 2nd - owe Shu... After starting to check the position, 摅Uth step SU~S24) ° Then, the root check result, the final detection of the substrate 9 above 91 The film thickness of the film 92 is not uniform, and the process of detecting the film thickness unevenness by the film thickness unevenness inspection is completed (step S25). First, in the film thickness unevenness inspection device of the second embodiment, the correction information acquisition unit 75 acquires the flow of the correction information (4). In the film thickness unevenness inspection apparatus of the second embodiment, the flow of obtaining the correction information is similar to that of the first embodiment hereinafter, and will be described with reference to Figs. 8 and 9 . First, after the mirror 90 (see FIG. 7) having uniform reflectance is held on the stage 2, the 312XP/invention specification (supplement)/95-06/95107389 1282842 is started to move the mirror 90 and the stage 2 (Steps S31, S32).

Then, the linear light of the wavelength band corresponding to the light source element 31a is emitted from the light beam portion 3a and irradiated onto the linear irradiation region on the mirror 9A, and then the reflected light from the mirror = 〇 is the line in the light receiving portion 4. The sensor 104 is received, and the strength knife ′ is taken, and then the output receiving unit 71 in the inspection unit 7 accepts it. Then, in synchronization with the movement of the stage 2, the intensity distribution of the reflected light from the linear illumination area on the mirror 90 is repeatedly obtained until the number of times of transmission by the line sensor is equal to the set number of times, and finally from the line sensor 41. The temporary output is accepted by the output accepting unit 71 to generate the first! The image 111 (steps S33 to S38). In the film thickness unevenness inspection device of the second embodiment, the exposure time (i.e., the exposure amount) of the line sensor 41 (steps, 4l, s4n) is sequentially generated to correspond to the exposure amount at each exposure time. The first image ln to the first image 120 (steps S34 to S4 and S411). Then, the moving mirror and the stage 2 are stopped, the illumination light is stopped, the average output corresponding to each j light is obtained, and finally, the corrected pixel value and the average output value of each CCD in the line-sensing 41 are obtained. The normalized curve core 135 (see Fig. 12) of the relationship (steps (10) to S44). Then, the correction information for each CCD is obtained from the normalization curve 135 and stored in the correction memory unit 76 (steps S45 and S46). In the film thickness unevenness inspection device according to the second embodiment, the film thickness unevenness inspection device according to the second embodiment determines whether or not the next light source device is present, and then emits light in the light source element 31a. The light source element of the portion is changed to the light source element 31b. Then, obtain the complex average output from the linear 312χρ/invention specification (supplement)/95·〇秘期卯1282842, 1J-41 to obtain the correction information memory in the correction information#, the shirt 7fi.. ^ The acquisition correction correction information acquisition unit 75 completes the pickup correction notification (step S32~, in the second embodiment, the device is the same as in the first embodiment, and the correction information τ can be used to obtain the correction information τ). In the film thickness unevenness inspection device of the second embodiment, 1 'changes the selected wavelength band to perform the second film thickness film to detect film thickness unevenness with good precision.帛2 Embodiment ΐ The shadow caused by the shielding characteristics of the optical system in the Γ device: the optical characteristics of the light source elements 31a and 31b (for example, the intensity distribution of the light emitted from the two components is uneven) Influence, A, the CCD sensitivity of the line sensor 41 caused by the cut = 里 = 31a, 31b is again 2.6, and the shadow ' is removed by the output correction unit 72, so that the thickness can be checked with a better 2 degrees. In the same manner as in the i-th embodiment, the light emitting portion 3a that transmits the g-like light is transmitted. In the line sensor 41, the incident angle TM of the light can be kept constant as a whole, and thus the unevenness detection is simplified. The correction information acquisition unit 75 is also the same as in the first embodiment, and is subjected to the film. In the environment where the influence is obtained, the correction information can be obtained, so that the correction can be appropriately taken: the correction information is obtained according to the average output obtained from the complex temporary output of the line sensor 41, thereby improving the correction = Further, the correction information can be easily obtained by using the mirror 9 or the diffusion plate. Next, the film thickness unevenness inspection device ja 312XP/invention specification (supplied V95 raising 5107389 32 1282842) according to the third embodiment of the present invention.口] Ming] 4] 1 4 is a thick layer of 兀 兀 爿 爿 爿 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 如 。 如 如 如 如 如 如 如 如 如 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰 胰The polarizer 61 and the polarizer moving mechanism (10) are provided. The other components are the same as those in the figure: the same symbols are attached to the two. The lower 5 brothers: the film 61 and the polarizer moving mechanism 62 are disposed on the stage 2 : between the board 9 and the wavelength band switching mechanism 5, and the optical path Among the parallel 1:6 in the center 2: the polarizing plate moving mechanism 6 2 that rotates the light sheet 61, the position of the polarizing range ΓΛ 3 to the line sensor 41 in the light receiving portion 4 and the returning optical path The position (movement). The polarizer 61 is disposed in the optical path. The reflected light of the film 92 is formed by the transmission polarizer 61. In other words, the polarizer moving mechanism 62 is an optical stripe. The polarizer 61 is moved forward and backward with respect to the optical path from the light emitting portion 3 to the linear 4!, whereby the polarizing plate 61 is disposed in the light=corresponding to the state of the optical system from the light emitting portion 3 to the X"41. The optical condition corresponding to the state, and the optical condition corresponding to the state in which the polarizer 6 is retracted from the optical path is switched. Use film thickness unevenness check 杳 蓄 蓄 4 4 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅 仅In the case of the correction of the film thickness unevenness inspection, the acquisition unit 75 obtains the flow of the correction signal, and the other party; each of the filters 5 is disposed in the optical path condition of the polarizer 61 and the polarizer 61 is retracted from the optical path. The state of the state; except for the point that the correction information is obtained under the optical condition of J, the rest is also the same as the embodiment of the 312 ΧΡ / invention specification (supplement) / 95-06/95107389 33 1282842 1 . Uneven film thickness inspection installation + _ a film fn, stop # 夕 / Especially, in the optical path with or without polarized light 61 caused by linear attenuation test crying," 彳, R1 ^ ^ ❽ shaved into 41 CCD The influence of the sensitivity variation is caused by the optical characteristics of the first film 61 (for example, the influence of the M and iTiR in the inspection portion 7 is uneven), so that the correction portion 7 2 is removed, and thus the precision is better. The film thickness was detected to be uneven.乂 Next, the film thickness of the fourth embodiment of the present invention is not described. Figure 1 5 矣-hour r - clothing i b diagram. In the case of the m]/thickness unevenness inspection device 1b, the first light-emitting portion 3 is emitted toward the substrate 9 in the front-and-for-thickness inspection device 1b, and is disposed on the substrate 9 (9 is formed) The upper side 91 of the membrane 92 is opposite to the side). In addition, the load, the M mesh corresponds to (4) D, and the (four) material has a light-transmitting substrate: the same as in Fig. 1, and the same reference numerals are attached to the following description. The light emitting portion 3' is the same as the second embodiment, and includes a white light, a funnel lamp 31, a quartz rod 32 extending upward in γ = in FIG. 15 perpendicular to the moving direction of the stage 2a, and a cylindrical lens 33. . Film thickness unevenness detection: in the garment lb, the linear light emitted from the light emitting portion 3 is incident on the (Z) side through the opening of the carrier I Tot, and then the substrate 9 η is turned on. The selection filter 51a in the transmission wavelength band switching mechanism 5 is replaced by the line sensing boundary 41 in the light receiving unit 4 after being replaced with the light of the selected wavelength band. σ - The process of checking the film thickness unevenness by the film thickness unevenness inspection device lb is the same as the first work implementation state. In addition, when the correction information is obtained by the correction bellow acquisition unit 75 in the film thickness unevenness inspection device 1b, the mirror (10) is not used (see 3 UXP/invention manual (supplement)/95^ milk Cong 89 34 1282842 The υ or the scatter plate is directly irradiated to the light receiving unit 4 in the case where the light is emitted from the light-emitting portion 3 and is stopped in the stage 2a in the stopped state 2, and the other embodiment 1 . In the film thickness unevenness inspection device 1b, the first yoke of the fish is the same as the yoke, and the influence of the optical 糸, the first shielding property, and the luminosity variation of the linear sensor 4 are in the inspection unit 7 Since the wheel correction unit 72 is removed, the film thickness unevenness can be detected with higher accuracy. Next, the film thickness unevenness inspection in the fifth embodiment of the present invention will be described. Fig. 16 is a front view showing the configuration of the film thickness unevenness inspection device 1c. In the film thickness unevenness inspection device 1c, the light receiving unit 4 is provided with a synchronization control unit 43 that sends a synchronization signal to the control unit 8 in accordance with the imaging time of the line sensor 41. In the film thickness unevenness inspection device 1c, as in the second embodiment, the wavelength band switching mechanism 5 is omitted from the film thickness unevenness inspection device 丨 shown in FIG. The emitting portion % is replaced by the light emitting portion 3. The light emitting portion 3a is provided with two light source elements 31a and 31b (hereinafter referred to as "first light source element 31a" and "second light source element 31b") that emit light of mutually different wavelength bands, and is a light source in the present embodiment. The first light source element 31a and the second light source element 31b are light-emitting diodes (hereinafter referred to as "LEDs"). Other configurations are the same as those in FIG. 1, and the same reference numerals are attached to the following description. In the light emitting portion 3a, the first light source element 31a and the second light source element 31b are individually turned on, and the light of the wavelength band corresponding to the light source element (hereinafter referred to as "selected light source element") is turned on. Substrate 9 above 91 312XP / invention manual (supplement) / 95·06/95107389 35 1282842 shot. $德, No. control: injection; Γ" The selection of the light emitted toward the substrate 9 is switched at a high speed in accordance with the synchronous signal light source element L from the synchronization control unit 43, so that the light emitted from the light emitting portion 3a is exchanged by the knife The wavelength element 31 "two" 4 received light wavelength band, the first light source element band high speed = the light source element corresponding to the mutually different complex wavelengths in 4: 'line sensor 41 receives light from the light The line 3 reflected on the film 92 of the linear irradiation area on the upper surface 91 is emitted by the portion 3a, and the mountain station receives the intensity distribution of light from the linear irradiation area, and will cry. Department 7. The film thickness unevenness inspection device 1 is subjected to a line measurement. In the movement of the substrate 9 and the stage 2, the intensity distribution of the reflected light from the film 92 formed on the surface 91 of the substrate 9 is repeatedly obtained. In the film thickness unevenness inspection device 1A, during the movement of the substrate 9, the synchronization signal is synchronized with the synchronization signal from the synchronization control unit 43 in the receiving unit 4 to switch between the ith light source 兀: 31a and the second light source element The light source element acquires the intensity distribution of the light in the wavelength band corresponding to the ith light source element 31a and the second light source element, respectively. At this time, the "selection of the switching of the light source elements and the acquisition of the intensity distribution" is very high speed compared to the movement of the substrate 9, and thus the substantially linear irradiation area of the upper surface 91 of the substrate 9 can be made (correctly, repeating for the scanning direction) In two or more regions of 1/2 or more, the intensity distribution corresponding to each of the first light source element 31a and the second light source element 315 is obtained once. Next, a description will be given of a flow chart in which the film thickness unevenness is inspected by the film thickness unevenness inspection device 1c. Fig. 17 and Fig. 18 show a flow chart using the film thickness unevenness inspection device 1 c 312 χ ρ / invention manual (supplement) / 95, 〇 6 / 951 〇 7389 36 1282842. By the film thickness unevenness inspection device ^Inspecting the substrate 9 above the film thickness unevenness of Fig. 16^i^2 'First' substrate 9 is held at: ( + η: ί: Stage 2 where the inspection position is not started After that, the substrate 9 and the stage 2 are moved (step S51). J is controlled by the control unit 8, and only the light source element 31a is clicked on the light emitting unit 3a. 1 - from 〇T dia, that is, the first source element 31a is selected as the light source element, and the wavelength band corresponding to the light source element 31 &

Linear light having a length of 550 jobs and a half value width of 1 〇 nm is emitted from the light emitting portion %. The linear light from the light emitting portion 3 & is incident on the substrate 9 at an incident angle 60, and is incident on the linear irradiation region on the upper surface 91 (step S52), and the linear irradiation region moves relative to the substrate 9.

The light from the light emitting portion 3a is reflected on the upper surface 91 of the substrate 9 and guided to the light receiving portion 4. In the light receiving unit 4, the light reflected on the upper surface 91 of the substrate 9 is received by the line sensor 41 (step S53), whereby the reflected light from the linear irradiation region on the substrate 9 is obtained by the first light source element 31a. The intensity distribution of the corresponding wavelength band (step S54). The output value from ^^(3) in the line sensor 41 is sent to the output accepting unit 71 in the inspection unit 7. After obtaining the intensity distribution corresponding to the first light source element 31a, the control unit 8 confirms whether or not the next light source element having the corresponding intensity distribution is obtained for the approximately linear irradiation area (step S55). When there is a next light source element (that is, the second light source element 31b), the control unit 8 controls the first light source element 31a and the second light source element 31b to turn off the first light source element 31a and the second light source element 31b. When the light source element is changed, the process returns to step S52 as the second light source element 312 of the selected light source element/invention specification (supplement)/95-〇6/95107389 37 1282842: linear light of the wavelength band corresponding to the kilogram The substrate 9 is irradiated (steps S551, S52). In this manner, the film thickness unevenness inspection crack lc is performed, the step of selecting the light source element is changed, gp, the wavelength band switching step of switching the wavelength band of the light received by the light receiving unit 4 (step S551), and the emission from the light emitting portion % corresponds to The 射 亓 亓 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Then, the line sensor 41 in the light receiving unit 4 receives the reflected light of the wavelength band corresponding to the second light source element 31b, and obtains the intensity distribution, and the output value of each (10) from the line sensing H 41 is sent to the inspection. unit? After the output receiving unit 71, (in the present embodiment, there are two light source elements), the control unit 8 confirms that there is no next light source element (steps S53 to s55). In the film thickness unevenness inspection device 1c, the control unit 8 repeatedly checks whether the substrate 9 and the stage 2 have moved to the end inspection position indicated by the two-dot chain line in FIG. 16 while the substrate 9 is moving (step S56). When the second light source element 31b is turned off, the control unit 8 turns off the first light source element 31a, and returns the selected light source element to the first source element (that is, the first light source element 31a). (Step S561). Next, the process returns to step S52, and the linear light of the wavelength f corresponding to the selected light source element is received, the reflected light is received, and the intensity distribution of the light from the linear irradiation region is obtained (steps S52 to S54), and then the light source element is switched. Then, S 5 5 S 5 51)' illuminates the linear light again, receives the reflected light, and obtains the intensity distribution (steps S52 to S55). Figure 19 is a timing chart showing the line sensor 41, the first light source element 31a, and the second light source element 312XP in the steps s52 to S56/inventive manual (supplement)/95·06/95107389 38 1282842 The action of 31b. A line 201 in Fig. 19 indicates an image acquisition state of the line sensor 41, and a line 202 indicates a synchronization signal from the synchronization control unit in the light receiving unit 4 to the control unit 8. Further, lines 203 and 204 indicate the i-th light source element. 31 a and the second light source element 31 b are turned on/off. In the film thickness unevenness inspection device 1c, the control unit 8 is based on the synchronization signal from the synchronization control unit 43 (shown by line 202). The control line sensor 41' captures a line (which is a pixel group obtained by capturing a linear irradiation area, and a plurality of pixels 11 in a row in the γ direction in FIG. 20 described later) and controls the first The light source element 31a and the second light source element 31b perform respective ON/off switching. In the present embodiment, the synchronization signal interval is further reduced to about 1 msec. As shown in Fig. 19, the film thickness unevenness inspection device ic During the movement of the substrate 9 and the stage 2, the operations of steps S52 to S56 are repeated, and the intensity distribution of the reflected light from the linear illumination region on the substrate 9 is repeatedly obtained by the line sensor 41. The selected light source that emits light toward the substrate 9 Element, and synchronous control from the light receiving unit 4 The synchronization signal sent to the control unit 8 (that is, the time point at which the line sensor 41 is to be imaged) is synchronously and repeatedly switched (that is, the wavelength band of the light received by the light receiving unit 4 is synchronized with the light receiving unit 4, and the first light source element is 31a and the second light source element 31b are switched between the complex wavelength bands.) In other words, the wavelength band of the light received by the light receiving unit 4 is synchronized with the reflected light from the linear illumination area obtained by the line sensor 41. After the substrate 9 and the stage 2 are moved to the end inspection position (step S56), the substrate 9 and the stage 2 are stopped by the movement mechanism 21, and the 312XP/invention specification (supplement) is also stopped. 95·06/951073 89 39 !282842 2 2 fetching (step S61). In the output receiving unit 检查 of the inspection unit 7, the intensity distribution of the reflected light from the upper surface 91 obtained by -4 is arranged in the order of the sequence The two-dimensional image 1 〇 shown in FIG. 2A is generated (steps 4Γ, 20- shown in the '2 dimensional image 100 are arranged alternately: the line is illuminated by the linear light corresponding to the source 7L piece 31 a. Lines 301 to 306 illuminating the area; and photographing by the second light source element 3lb Corresponding to the lines 401 to 406 obtained by the linear irradiation area irradiated by the ray-like light. The second-order image 100 is referred to as "mixed image 100" in the following. In addition, in Fig. 20, it is convenient for illustration. The number of lines included in the mixed image 100 and the number of pixels included in the i lines are drawn much less than the actual mixed image. After the generation of the mixed image 100, the output receiving unit 71 takes out the first light. The lines 30 i to 3 〇 6 corresponding to the element 31a are arranged in time series, and the reflected light from the upper surface 91 is generated in the case where the ith light source element 仏 is selected as the optical element. 2 ^ yuan image of the intensity distribution (hereinafter, referred to as "the first! image". ). Further, the lines 4〇1 to 406 corresponding to the second light source element 31b are taken out and arranged in time series, whereby when the second light source element 31b is selected as the optical element, the entire substrate 9 is generated. A two-dimensional image of the intensity distribution of the reflected light (hereinafter referred to as "second image") (step 63). As described above, in the film thickness unevenness inspection device 1c, the acquisition of the intensity distribution and the switching of the light source elements, and the relative movement of the linear irradiation region to the substrate 9 312XP/Invention Manual (Supplement)/95-06/951073 89 40 1282842 ==Speed 'Therefore, the line 301 in the first image and the second image to the substrate 9 are not in the same linear region. The intensity of the light is divided into red lines "302~306 and lines 4〇2~4〇6 with). The two-legged memory of the correction information storage unit 76 corrects the wavelength band of the light from the first light source element 31a, and the output correction unit 72 is based on each pixel of the selected image (ie, The final wave: the image is generated by the intensity distribution corresponding to the light of the JL1 source ^^. In the same way, each pixel of the second image is corrected based on the correction information associated with the second light source from the second light source element (i.e., the light from the second source element obtained by the -L 41 is - The second corrected image is generated by the intensity distribution (step s(4). After the correction image and the second correction material are attached, the strong image and the second corrected image of the strong calling unit 73 are the same as in the first embodiment. At the °, the first emphasized image and the second emphasized image are generated (step 々, 蛍綦4 is displayed on the device, and the detecting portion 74 is based on the first... S66). Strong (6) image and second emphasized image detection film thickness is not thick and uneven inspection device, the U source element 第 and the first shot '兀: 31b correspond to two different wavelength bands of light, individual photos, To the film 92 on the upper surface 91 of the earth plate 9, thus, it is possible to: check the film thickness unevenness according to the different two wavelength bands corresponding to the degree range 3] 2XP/invention specification (supplement)/95·〇~95107389 As a result, = 41 1282842 Good precision detection film thickness variation (ie, film thickness unevenness inspection device lc, 蛊本ώ _. letter Synchronization (i.e., the wavelength band of the light received by the synchronization of the line sensor 4:: empty portion 43), the side meter; the switching of the light receiving portion 4 between the two rows is repeated, so that the reflected light from the film 92 on the substrate 9 is taken. Intensity distribution. The board 9 of the company can scan the cat once, and it can generate / capsule 'the line sensor 41 to generate the image corresponding to the two wavelength bands and the second emphasis image, because the second emphasizes the time. In the checking device 1C required for the 7-sub-uneven inspection, the control unit 8 alternates the 0N/OFF switching to emit mutually different turbidity books 2 light source 'component light source elements... but the characteristics of the film 92 (ie, ^) 4 wavelength bands of light received Π ^ ^ ^ 1 film thickness or other optical properties) change over time R main, # # L. 2 ^ hunting 2 broom generation switching wavelength band over M ± ~, Bay 1 in the two images obtained above 91, due to the difference in the film thickness of the two images, the thickness of the film may be uneven in both images. Therefore, there is no good precision. Detecting film thickness unevenness: =0;:目!: This 'film thickness unevenness check 褒 ic, because the energy can be large, the main 5 * first image and second image Therefore, even when the film 92 is changed over time, the first emphasized image and the second emphasized image of the Z-phase opposite surface 91 of the film 92 can be generated. /,, ', σ果j In at least one of the first emphasized image and the second emphasized image, the film thickness unevenness can be prevented from being included in the low-sensitivity region, and even the film 92' having the transition property can detect the film thickness unevenness with good precision. (Supplement) / 95 side 1 〇 7389 42 1282842 The film thickness unevenness inspection device 1d of the embodiment of the present invention is not thickened = 2 is the front view. 1 - a clothing /, with a wavelength band switching mechanism 5a in place of Figure 1 is not the boat thickness unevenness inspection nightmare Gossip Park film thickness unevenness inspection device:; 2::: switching mechanism 5. Further, the yak (4) is injured, and in the fifth embodiment, the step control unit 43 is provided, and the step signal is sent to the control unit 8. The same symbol is used for the photographing. - The following description is attached to Fig. 2, which is a view of the wavelength band switching mechanism 5a viewed from the side of the substrate 9. Such as 1 and: 22: kg shows that the wavelength band switching mechanism is equipped with two kinds of filters (for example, D 'half-value interference filter of 〇nm, hereinafter hereinafter 51b" and "second crying u filter 51c") in place of the five filter and optical devices 51 (refer to FIG. 2) of the wavelength band switching mechanism 5, wherein the two types of choppers selectively transmit light of different narrow wavelength bands, respectively. The other components are the same as those of FIG. 9 and FIG. 9. As shown in FIG. 22, six circular openings 521 are formed at equal intervals in the circumferential direction on the filter wheel 52, and three filter filters are alternately mounted on the openings 521, respectively. 51b and three second filters 51c. One of the six filters of the wavelength band switching mechanism is disposed in the optical path from the substrate 9 to the light receiving portion 4. In the film thickness unevenness inspection device 1d shown in Fig. 21, from the light emitting portion 3 The reflected light that is emitted from the halogen lamp 31 and reflected on the substrate 9 (that is, the reflected light of the white light including the light of the two transmission wavelength bands corresponding to the first filter 51b and the second filter 51c) The filter is disposed only in the optical path from the substrate 9 to the light receiving unit 4 (hereinafter, referred to as "selection filter 3ηχρ/invention specification (supplement)/95-〇6/951〇7389 43 1282842) The light of the wavelength band of the device is guided to the light receiving portion 4 through the selection filter. In the wavelength f switching mechanism 5a, the filter wheel 52 is rotated by the filter _=rotation motor 53 controlled by the control unit 8, so that it is disposed in the plural (six in this embodiment) filter. The selection filter of the light emitting portion 3 to the optical path of the light receiving portion 4 is switched to another filter at a high speed, and the wavelength band of the light received by the receiving aperture 4 is changed. Thus, the filter rotating motor 53 and the filter wheel 52 serve as a filter switching mechanism. The spring film thickness unevenness inspection device Id- moves the substrate 9 and the stage 2, and the light receiving unit 4 (synchronization signal from the synchronization control unit 43) is the same as the y in the first filter 1 b b and the second crossing The optical filter 51 c switches between the selection filters, and the intensity distribution of the light in the wavelength band corresponding to the second filter 51b and the second filter 51c is alternately obtained. At this time, since the selection of the filter is switched at a very high speed compared to the movement of the substrate 9, the first filter can be obtained once and again for the linear irradiation region of the upper surface 91 of the substrate 9 to be the first filter 51b and the second filter. The intensity distribution of the lighters 51 c respectively. • Next, the film thickness unevenness inspection device 1 d is used to check the flow of the film thickness unevenness. Fig. 23 is a view showing a part of a flow chart for inspection by the film thickness unevenness inspection device 1d. In the film thickness unevenness inspection device Id, after the steps S71 to S76 of Fig. 23 are performed, the same operation as the operation (steps S61 to S66) of the film thickness unevenness inspection clothes lc shown in Fig. 18 is performed. 'When the film thickness unevenness inspection device Id is uneven on the film thickness on the upper surface 91 of the inspection substrate 9, first, after the substrate 9 is held on the stage 2, the substrate 9 and the stage 2 are moved (+ χ) The direction starts to move and then comes out of the light. The linear light of 卩3 is irradiated onto the linear irradiation area on the substrate 9 (step 312XP/invention specification (supplement)/95-06/95107389 44 1282842, steps S71, S72). The white light emitted from the light emitting portion 3 is emitted on the upper surface of the substrate 9, and transmitted through the ith filter of the wavelength band switching mechanism 5a (which is disposed in the optical path), and only filters the corresponding filter of the u-th optical device. The wavelength of the wavelength (for example, a center wavelength of 55 〇 nm and a half-value width of 1 〇 nm) is accepted by the line sensor 41 in the cut 4 . Then, the strong knives of the wavelength band corresponding to the first filter illuminator 51b are received from the linear re-radiation area, and then sent to the inspection unit 7 (step S73, illusion 4). After the intensity distribution corresponding to the younger filter 1 and the optical device 51b is taken, the control unit 8 confirms whether or not the next filter capable of obtaining the corresponding intensity distribution is obtained for the linear irradiation region of the approximate phase = (step S75). When there is a next usable (ie, 'second filter 51c') filter, the pulverizer rotates the motor to rotate the filter wheel 52 by 60. The change filter is used to change the filter at this point (bovine = Then, the returning step is still performed, and the light of the wavelength band corresponding to the line sensor of the light-receiving unit 4

= Step, then, the output of the line sensor 41 is: After the output accepting unit 71 in the k-check unit 7, the control unit 8 recognizes the next filter (step S75). In the film thickness unevenness inspection device 1 (1), the control unit 8 repeatedly checks whether the substrate 9 and the stage 2 have moved to the end inspection position (step S76) where the two-point key line in Fig. 21 is moved during the movement of the substrate 9. When it has not moved to the end inspection position, the illuminator rotation motor 53 rotates the filter wheel 52 by 6 〇 to return the filter element to the filter of the first type (ie, the first filter 51b). At this point (step S761), returning to step s73, accepting the reflection 312XP / invention specification (supplement) / 95-〇6/95107389 45 1282842 S74; ' intensity distribution of light in the 照射, 隹-shaped illumination area (step S73, the step is when the selection filter is switched (steps S75, S75U': the person receives the reflected light and obtains the intensity distribution (step milk ~ milk). The film thickness unevenness inspection device Η, on the substrate 9 During the movement of the stage 2, the actions of steps S73 to S76 are repeated, and %, 'the line of the line-shaped body from the substrate 9 is reversed. The reflected light of the oblique field is taken over the selection filter. = wave "intensity distribution" selection of light reflected by the transmissive substrate 9 and synchronization control from the light receiving portion 4 The synchronization signal sent to the control unit 8 (i.e., the time point at which the line sensor 41 is photographed) is synchronously reversed: the wavelength band of the light received by the light receiving unit 4 and the two long bands of the received light are repeatedly switched. The wavelength band of the light received by the text light portion 4 is switched in synchronization with the intensity distribution of the reflected light from the linear illumination region obtained by the line sensor 41. The substrate 9 and the carrier are switched. When the stage 2 has moved to the end inspection position (step S76), the movement of the substrate 9 and the stage 2 is stopped, and the illumination light is also stopped (step S61). The inspection unit 7 is in the same manner as the fifth embodiment. Similarly, the output receiving unit 71 generates a mixed image 1 (refer to FIG. 8 (8), and selects every other line from the mixed image 1 to generate the ith image and 帛2 corresponding to the light 51 51b. The second image corresponding to the optical device 51 (steps S62 and S63). The output correction unit 72 corrects the jth image and the second shirt image to generate the first corrected image and the second corrected image (step S64). The emphasis processing unit 73 generates the first emphasized image from the i-th corrected image and the second corrected shirt image. (2) The film thickness is not 312XP/Invention Manual (Supplement)/95-06/95107389 1282842 The detection unit 74 detects the film thickness unevenness based on the first emphasized image and the second emphasized image (steps S65 and S66). In the film thickness unevenness inspection device 1 d described above, the light receiving unit 4 is connected to the light of two wavelength bands different from each other corresponding to the first filter 51b and the second filter 51c, thereby The first emphasized image and the second emphasized image corresponding to the two wavelength bands having different low-sensitivity regions are inspected and the film thickness is not the same as in the first embodiment, and the film thickness can be detected with good precision without unevenness. In the device 1d, when the synchronization signal is generated from the synchronization control unit 43 by the wavelength band switching means 5a, the wavelength band of the light received by the light receiving unit 4 is repeatedly switched between the mutually different wavelength bands. The intensity of the reflected light from the film 92 on the upper surface 91 of the substrate 9 is the same as that of the fifth embodiment. When the line sensor 4 扫 scans the substrate 9 once, it can generate two. The second-second image and the second emphasized image corresponding to the wavelength band can be shrunk Short film thickness unevenness check required = between. Further, the same as the fifth embodiment, since the image and the second image can be made at about the same time, even a film having transition characteristics can detect film thickness unevenness with good precision. ^ Film thickness unevenness inspection device]d, clear φ cry, # — medium filter is red turn motor 53 to rotate filter wheel 52' and switch filter filter' can easily switch light receiving unit" The wavelength band. The unevenness inspection device 1 e e constitutes a front view. 'Ejection toward the substrate 9 Next, the film thickness of the seventh embodiment of the present invention will be described. Figure 24 is a view showing the film thickness unevenness inspection device shown in Figure 24, the film thickness unevenness inspection device le 3 UXP / invention manual (supplement) / team 〇 6/95107389 47 1282842 the output is as the same as Figure 15 The film thickness unevenness inspection device lb 2a is shown as the output portion 3, and is placed on the substrate 9 side. Further, the carrier Δ 2a is provided with an opening corresponding to the substrate 9 and is provided by the substrate 9 carrying the port. π Door round to ensure transparency. The material unevenness inspection device &# Λ 况 明 所示 所示 所示 所示 所示 。 。 。 。 。 在 在 在 在 在 在 在 在 在 在 在 在 在 在The light =::3a is the same as the fifth embodiment, and includes the first moving side "la" of the LED and the second light source element 31b; and the quartz extending in the direction of FIG. 24 of the cylindrical lens of the stage 2a. In the post-inspection device 16 of the rod 32 and the circle, the 'light-emitting portion 3 continues, the spring-like first' passes through the opening of the stage 2a, and is incident on the (-2) side to the address, and the column is cried on the substrate 4 and After the film 92, the line in the light receiving unit 4 is accepted by the 玍 列 列 41 41 , , , , 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查 检查According to the embodiment, it is possible to detect the film thickness unevenness with good precision while shortening the time required to check the film thickness unevenness. In addition, even with the film 92 having the transition property, the film thickness can be detected with good precision. The present invention is not limited to the above-described embodiment, and various modifications can be made. For example, the stage is moved with respect to the light emitting portion and the light receiving portion 4, that is, Alternatively, the stage may be fixed, and the light emitting portion and the light receiving portion 4 may be fixed to each other. In the light emitting portion 3, an optical fiber array in which a plurality of optical fibers are arranged in a straight line may be provided instead of the quartz rod 32, and the light from the guillotin lamp 31 is transmitted through the optical fiber 3] 2XP/invention specification (supplement) /^(^^7389 48 1282842 2 columns 'by which it is converted into linear light. In this case, in order to make ., the intensity of the linear light of the truncated array is divided into a few secrets. :-, the scattering plate can also be placed in the vicinity of the paper. In addition, a plurality of light-emitting diodes arranged in a straight line can be arranged as the emission 31 and the quartz rod 32. The source of the New Zealand is used instead of the tooth lamp. In the film thickness unevenness detecting and puncturing portion 3a of the fifth and seventh embodiments, the light source and the second switching are not necessarily limited to the first light source element 3! a light source. For example, it can also be switched between the first light source element 31a and the quartz rod 32, and between the quartz rods 32, respectively, 1_\2 2 source elements and απμ, 4. 5 Set two shutters (such as 'liquid crystal shutter or coust Optlc Modulator: sound and light modulator), in 〆=1 2 and 2nd light Sin element both the lighted state, - a synchronization signal to synchronize the switching of the two shutters 43,, to the wavelength emitted by the optical switch portion 3〇 pounds band of light emitted. The fault is that the second light source element _ must be limited to the point of catching the flash, which can be a semi-conductor, a fat-emitting element, a body light-emitting element, or a shooting phase ST Π A version of the field. Other than the semi-light-guiding element: the light 3 a is provided to emit the first-injection portions of the mutually different wavelength bands, and the light-receiving portion 4 is switched between the bands. The thickness of the film is not long, and the wavelength band of the filter is more than 3 wavelengths. 312XP/Invention Manual (Supplement)/95·〇6/95107389 49 Ϊ 282842 The wavelength of the film of the fifth embodiment and the seventh embodiment is not changed by the light-emitting unit 4; The light shot can also be set in the second shot. The top view of the shot part is blown, and the light shot part is fluttered with money; the number map = the light element 31a and the plurality of second light source elements, the light of the source band; the scattering plate 34, and The scattering A is composed of different wavelengths of light source elements [^1 1 light source element 第 and 2nd ~ training first] and cylindrical lens 33. The light emitting portion 交互 is alternately arranged in the i-column by the light source element 31a and the second light source element 3'. ^3 A direction The light source element 31a or the second light source element is incident on the diffusion plate 34 and the cylindrical lens 33, and is converted into linear light having an intensity distribution to be guided to the substrate 9. In the light emitting portion 3b, the timing from the same portion of the synchronization control unit 43 in the light receiving portion 4 is the same as that of the cow and the wire sensing device 41; 1 light source element annihilation number 2 precursor element 31b, in addition, element 31b (four), annihilation complex number = thickness unevenness inspection in the farmer's light emitted by the light source, containing the building, the soil board 9 In the case where the formed film 92 is adversely affected by the wavelength band light, a filter that does not transmit light of the wavelength band or the like is provided in the optical path from the light source to the substrate 9. Further, when the film 92 on the upper surface 91 of the substrate 9 is transparent to infrared rays, a light source that emits infrared rays may be provided on the light emitting portion γ. The incident angle of the light on the substrate 9 is kept constant on the upper surface 91, so that the film thickness 312XP/invention specification (supplement)/95 catches 951073 89 50 1282842, and in this view, the preference is shifted by relative to the substrate 9. The device 41 receives the reflection of the linear light from the light emitting portion: or 'the linear light after the her 92' (10), at the time of the shooting of the ugly board 9, also on the gaze portion 4 instead of sensing The sensors 41 to 2...D sensors are not necessarily disposed in the optical path of the third ▲ light emitting portion 3 to the substrate 9 except for the optical path from the substrate 9 to the light receiving portion 4. Another f 3 thin film thickness unevenness inspection skirt set ^, can be received by the light 2 and: the diaphragm moving mechanism 6 2 from the wavelength band switching mechanism and 5 to the process 'in addition, can also be configured in the slave In the first embodiment, in the fourth embodiment, the thickness difference is checked. At this time, the output correction unit 1 can be used for the selection of the linear irradiation region and the output of the intensity distribution of the ancient light by the output correction unit 1 each time. (4) The total correction image number = Bu_: When it is not necessary to display the correction image on the screen, etc., it is also possible to take the near:::_2 normalization, and seek _=. In this case, the equation representing the relationship between the average output values can be obtained according to the approximate curve 132 instead of the equation (1), and the calculation is used as the correction information in the correction information memory unit; Further, it has been recalled that the correction information in the correction information storage unit 76 is not necessarily limited to the 312XP/invention specification (supplement)/95-〇6/95107389 1282842, and is limited to the second-order function, and may be a function of three or more times. The film thickness unevenness inspection unit 74 of the above-described embodiment detects the unevenness of the image of each of the pixel values in the unevenness of the detection of the unevenness of the film, to detect the film thickness unevenness of the film 92, the camp, and the like. The above shows 91 2 /: 2: Through the operator's visual image for comparison, zinc is used as a 2 _ 兀 兀 像 , , , , , , , , 曰 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测 检测Uneven thickness. The film thickness unevenness inspection device of Ah can be used for other films other than the film, for example, the insulating film formed on the wire 9 and the unevenness of the conductivity, or by coating the coating liquid. The method is, for example, a film formed by a ruthenium plating method and a chemical vapor deposition method (CVD: Chemical Vap〇r DeP〇slti〇n), and sputtering. Further, the film thickness unevenness inspection device may check the film thickness unevenness of the film formed on the other substrate of the semiconductor substrate (4). Although the present invention has been described in detail, the invention has been described as illustrative and not restrictive. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front view showing the configuration of a film thickness unevenness inspection device of the 帛1 embodiment. Figure 2 wavelength band switching mechanism. Fig. 3 is a flow chart for checking the unevenness of the film thickness. Fig. 4 is a flow chart for checking uneven film thickness. Figure 5 shows the relationship between film thickness and reflectance. Fig. 6 shows the relationship between the film thickness and the reflectance variation. 312XP/Inventive Manual (Repair)/95_〇6/95丨〇73 89 52 (10) 2842 Figure 7 Factory: Front view of the uneven dance thickness inspection device. ' 流程图 Get a flow chart of the correction information. • = 9 is a flow chart for obtaining correction information. Indicates the image used to obtain the correction information. Figure I. Table: Relationship between exposure and average output from the CCD. relationship. Between the corrected pixel value and the average output value from the CCD, the ill·f is larger than the partial view of the light emitting portion of the second embodiment. • Fig.: The film thickness unevenness inspection device of the fourth system is in the form of the third embodiment, and the film thickness unevenness of the front view 15 system and the f 4 configuration mode is the front view jgj. Fig. 16 is the fifth embodiment. The film thickness unevenness inspection device constitutes a front view 0 Η 17 is a flow chart for checking the film thickness unevenness. Spring Figure 18 is a flow chart for checking film thickness unevenness. & Fig. 19 is a timing chart showing the actions of the line sensor, the i-th light source element, and the second light source element. Figure 20 shows a mixed image. Fig. 21 is a front view of the stomach showing the configuration of the film thickness unevenness inspection device of the sixth embodiment. Figure 2 2 shows the wavelength band switching mechanism. Figure 23 is a flow chart for checking film thickness unevenness. Fig. 24 is a front view showing the configuration of the film thickness unevenness inspection device of the seventh embodiment, 312XP/invention specification (supplement)/95-06/95107389 53 1282842. Fig. 25 is a plan view of the light emitting portion. [Main component symbol description]

1a to 1e film thickness unevenness inspection device 2, 2a stage 3, 3a, 3b light emitting portion 4 light receiving portion 5, 5a wavelength band switching mechanism 7 inspection portion 8 control portion 9 substrate 21 moving mechanism 31 halogen lamp 31a 31b light source element 32 quartz rod 33 cylindrical lens 34 scattering plate 41 line sensor 42 lens 43 synchronization control unit 51 filter 51a selection filter 51b first filter 51c second filter 312XP / invention manual ( Replenishment) /95-06/95107389 54 1282842 52 53 61 * 62 71 72 73 74 Reference 5 —76 90 91 92 100 111 φ 112 113 114 115 116 • 117 118 119 , 120 Filter wheel filter Rotary motor polarizer Polarizer moving mechanism output receiving unit output correction unit emphasis processing unit film thickness unevenness detecting unit correction information obtaining unit correction information memory unit mirror upper film 2nd dimensional image first image second image third image fourth image fifth image sixth Image 7th image 8th image 9th image 10th image 312ΧΡ/invention manual (supplement)/95-06/951073 89 55

1282842 13 Bu 136 point 132, 133 line 134, 135 line 211 motor 212 guide 301 ~ 306 line 401 ~ 406 line 521 opening 901 main surface 312XP / invention manual (supplement) / 95-06/95107389 56

Claims (1)

丄 282842 Ten patent application scope · The upper thickness m-inspection device 'is used to inspect the film formed on the substrate to be uneven, and is characterized in that it has a light emitting portion that emits light toward the film; The film optical element is reflected by the above film, or specific: the intensity of the long band of light::? And outputting the above-mentioned segment from the main surface, which is between a plurality of optical conditions, switching the corresponding learning center 2, the light emitting portion to the light of the sensor, etc., the element, * learning::: two: The plurality of correction information is selected to output the respective photoreceivers associated with the optical condition of the correction of the optical element. , D Kang above to correct the poor news, to correct the film inspection device from the above-mentioned sensing = application for the first item, in which the light emitting portion emits light containing light of a plurality of wavelength bands; the plurality of filters are transmitted; The optical condition switching means includes: wherein the optical filter switching mechanism for allowing the plurality of wavelength bands is selectively changed from the light emitting portion to another filter, wherein the plurality of filters are included in the plurality of filters; A filter disposed in the optical path of the above sensor is cut to change the specific wavelength band; 312XP/invention specification (supplement)/95·〇6/95ι〇7 to move 1284842 1282842 for learning:: r Each of the plurality of wavelength bands of the above-mentioned plurality of wavelength bands, wherein the optical condition switching means includes: a polarizer; and a portion between the sensors to polarize the polarized light a sheet moving mechanism that moves from a position in the light exiting optical path and a positional sheet that is apart from the optical path, and the plurality of optical conditions include: a state in which the j is disposed in the optical path The optical condition corresponding to the polarizer described above; and the optical condition corresponding to the polarizer in a state in which the optical path is removed. 4. The film thickness unevenness inspection device according to claim 1, wherein the light source is emitted; the plurality of light source elements respectively emit light of mutually different wavelength bands; and the optical condition switching means controls the light exiting portion The wavelength band of the emitted light is changed to 'change the specific wavelength band. The above-mentioned number optical condition 'includes optical conditions in which the respective complex wavelength bands are the specific wavelength bands. 5. The film thickness unevenness inspection device according to the fourth aspect of the invention, wherein the plurality of light source elements are semiconductor light-emitting elements. 6. The film thickness unevenness inspection device according to the scope of the patent application, wherein each of the plurality of correction information is a function of two or more times for conversion to 312XP/invention specification (supplement)/95-06/951073 89 58 1282842 The output value of each of the above-mentioned light receiving elements from the above sensor. 7. The film thickness unevenness inspection device according to claim 1, wherein each of the plurality of correction information is a comparison table (iGGkuptab (4), 'converts an output value of each of the light receiving elements from the sensor. The film thickness unevenness inspection device according to the first aspect of the invention, wherein the sensor receives the specific wavelength band after the film is reflected, and the film thickness unevenness inspection device according to claim 8 Furthermore, the present invention further includes a predetermined moving side portion of the main surface of the main body and the sensor shifting mechanism, wherein the holding portion is emitted relative to the light along the upward direction of the substrate; the light is emitted. The light source is provided with a light source; and the "subsystem, &# converts the light from the light source into linear light perpendicular to the moving direction, and directs the light to the main surface; In the line sensor, in synchronization with the movement of the holding portion, the intensity distribution of the specific wavelength band light after the linear light is reflected by the irradiation region on the substrate is repeatedly obtained. 10. The film thickness unevenness inspection device according to claim 8, wherein the light from the light emitting portion is inclined toward the main surface of the substrate. ^ η · The film thickness unevenness inspection device of claim 1 is further provided with a correction correction acquisition unit for obtaining the above-mentioned plurality of correction information; 312ΧΡ/invention specification (supplement)/95 ·06/95107389 59 Ϊ282842 The above-mentioned correction of the poor acquisition unit performs the following steps: In the environment in which the thickness of the film thickness is uneven, the above-mentioned light-emitting portion emits the oil-receiving hunter to receive the above-mentioned special light, and obtains the plural Step of outputting; converting the above-mentioned sense (4), each of the above-mentioned = output of the towel into a value corresponding to the exposure amount, and obtaining a small number of corrections, and repeating the number of each of the above complex optical conditions The steps of outputting and the steps of obtaining the above-mentioned correction information. In the case of the film thickness unevenness inspection device according to the item n of the patent application scope, the above-mentioned sensor receives the light of the specific wavelength reflected by the film, and is not affected by the uneven thickness of the film, The mirror portion holds a mirror or a diffusing plate instead of the substrate. 13. The film thickness unevenness inspection device according to claim 12, further comprising: an eight-moving mechanism that causes the holding portion to face relative to a predetermined moving direction of the main surface of the substrate The light emitting portion and the sensor move; the light emitting portion includes: a light source; and an optical system that converts light from the light source into linear light perpendicular to the moving direction, and guides the light to the main light 312ΧΡ/发明发明(补件)/95-〇6/95丨07389 60 1282842 The above sensor is a linear salty π step, which is repeated to take the above specific wavelength with the movement of the above holding portion. In the irradiation area on the substrate (4), U. The film thickness unevenness inspection device according to claim 13 of the patent application, wherein: in the middle of the process, the amount of exposure, the edge shift is repeated to obtain a plurality of temporary outputs, If 15 is obtained from V, the final output corresponding to the above exposure amount is obtained. The film thickness unevenness inspection device of the 11th patent dry circumference is obtained in the step of obtaining the above correction information. on For each of the complex output values corresponding to the hard-numbered output of the respective light-receiving elements, only the output value between the predetermined upper limit value and the lower limit value is used. 16· The film thickness unevenness inspection device according to the scope of claim U, i ψ , 八 / 仵 仵 相 资讯 ' ' 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 ' ' ' In the complex output value corresponding to the upper output, after removing the output value that is greater than the limit value of the residual curve, the correction information is obtained. 17. The film thickness unevenness inspection device according to the scope of claim patent, Further, the present invention further includes a moving mechanism that moves the holding portion to the light emitting portion and the sensor in a predetermined moving direction along the main surface of the substrate (312) ) / 95 · 〇 6 / 95107389 61 1282842 movement; the light emitting portion is provided with a light source; and, optical system, J: linear light with white, μ, and vertical directions It; receiving the light of the specific wavelength band from the "region to the sensor; a 'of said linear light is irradiated The:= change means is synchronized with the above-mentioned sensor, and the wavelength of the light received by the sensor can be repeatedly switched between the mutually different waves, and the straw can be changed to change the specific wavelength band; the plurality of optical conditional towels include There are optical conditions for the above specific wavelength bands. In the case of the film thickness unevenness inspection method, the film thickness of the film is not uniform, and is characterized by having a selection step formed on the inspection substrate, which is selected from the plural optical conditions. When the optical strip corresponding to the film thickness unevenness inspection is selected, the optical wavelength band or the optical system state member is used; the emitting step is directed toward the light transmissive film formed on the main surface of the substrate; 'output step, And receiving, by the plurality of light receiving elements, the light having a specific wavelength after the film is reflected or transmitted through the film, and rotating the intensity distribution of the light from the specific wavelength band of the main surface from the sensor; and correcting the step For the above-mentioned detector _ each light-receiving element, the above-mentioned pre-study of the selected 312XP/invention specification (supplement)/95-06/95107389 62 1282842 is selected from the plurality of correction information that is connected to the above-mentioned complex optical conditions. The conditional correlation is added to the output of the sensor from the above-mentioned sensor according to the above correction information. 19. A film thickness unevenness inspection film film thickness unevenness, characterized in that it is provided with an upper surface formed by a substrate on which a H-shaped person has a light-transmissive film formed on a main surface thereof. In the direction, the light moving from the substrate is moved to the main surface, and the linear light extending in the gj / 4 direction perpendicular to the moving direction is emitted toward the film; the intensity distribution is obtained. a step of receiving the light reflected from the film or the light after the transmission by the sensor that moves with respect to the light emitting portion and the substrate, and repeatedly obtains the predetermined condition from the main surface square. The intensity distribution of the light in the extended linear irradiation region; the π wavelength band switching step 'which is synchronized with the intensity distribution transmitted in the intensity distribution obtaining step, and is switched between the mutually different complex wavelength bands a wavelength band of light received by the sensor; and, a step of 'compensating for each of the light-receiving elements in the sensor according to a plurality of complementary poor frequencies associated with the plurality of wavelength bands, respectively, corresponding to the above The intensity distribution of the light of the plurality of wavelength bands obtained by the sensor. 312ΧΡ/Invention Manual (supplement)/95·〇6/95107389