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WO2009048061A1 - 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 - Google Patents

接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Download PDF

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Publication number
WO2009048061A1
WO2009048061A1 PCT/JP2008/068237 JP2008068237W WO2009048061A1 WO 2009048061 A1 WO2009048061 A1 WO 2009048061A1 JP 2008068237 W JP2008068237 W JP 2008068237W WO 2009048061 A1 WO2009048061 A1 WO 2009048061A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive film
semiconductor
semiconductor wafer
producing
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/068237
Other languages
English (en)
French (fr)
Inventor
Keiichi Hatakeyama
Yuuki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to EP08837752A priority Critical patent/EP2200074A4/en
Priority to KR1020107008476A priority patent/KR101176431B1/ko
Priority to JP2009537000A priority patent/JP5353703B2/ja
Priority to CN200880110828A priority patent/CN101821834A/zh
Priority to US12/682,254 priority patent/US8198176B2/en
Publication of WO2009048061A1 publication Critical patent/WO2009048061A1/ja
Anticipated expiration legal-status Critical
Priority to US13/475,753 priority patent/US20120295400A1/en
Ceased legal-status Critical Current

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Abstract

本発明の接着フィルム付き半導体チップの製造方法は、半導体ウェハの一方面に、半導体ウェハを複数の半導体チップに分画する切り込みを半導体ウェハの厚みよりも小さい深さで形成し、半導体ウェハの切り込みが形成されていない他方面を、切り込みに至るまで研削することにより得られる、複数の半導体チップからなる分割済み半導体ウェハと、半導体用接着フィルムと、ダイシングテープと、が少なくとも積層され、半導体用接着フィルムが１～１５μｍの範囲の厚みを有し且つ５％未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の１１０％未満である、積層体を準備する工程と、複数の半導体チップをそれぞれ積層体の積層方向にピックアップすることによって半導体用接着フィルムを分割して接着フィルム付き半導体チップを得る工程とを備える。
PCT/JP2008/068237 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Ceased WO2009048061A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP08837752A EP2200074A4 (en) 2007-10-09 2008-10-07 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH A LONG-TERM FILM, A LAMINATE FILM FOR A SEMICONDUCTOR USED IN THE PROCESS, AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT
KR1020107008476A KR101176431B1 (ko) 2007-10-09 2008-10-07 접착 필름이 부착된 반도체칩의 제조 방법, 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
JP2009537000A JP5353703B2 (ja) 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
CN200880110828A CN101821834A (zh) 2007-10-09 2008-10-07 带粘接膜半导体芯片的制造方法及用于该制造方法的半导体用粘接膜、以及半导体装置的制造方法
US12/682,254 US8198176B2 (en) 2007-10-09 2008-10-07 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
US13/475,753 US20120295400A1 (en) 2007-10-09 2012-05-18 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device

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JP2007-263347 2007-10-09
JP2007263347 2007-10-09

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KR (2) KR101176431B1 (ja)
CN (1) CN101821834A (ja)
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028598A (ja) * 2010-07-26 2012-02-09 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2015503220A (ja) * 2011-11-02 2015-01-29 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子部品用接着剤
WO2016140248A1 (ja) * 2015-03-04 2016-09-09 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP2017117959A (ja) * 2015-12-24 2017-06-29 リンテック株式会社 半導体ウエハの加工方法、半導体チップの製造方法及び加工半導体ウエハ

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101821834A (zh) * 2007-10-09 2010-09-01 日立化成工业株式会社 带粘接膜半导体芯片的制造方法及用于该制造方法的半导体用粘接膜、以及半导体装置的制造方法
KR101555741B1 (ko) * 2010-04-19 2015-09-25 닛토덴코 가부시키가이샤 플립칩형 반도체 이면용 필름
JP5580701B2 (ja) 2010-09-13 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム
JP5883250B2 (ja) * 2011-07-29 2016-03-09 リンテック株式会社 転写装置および転写方法
JP2013065757A (ja) * 2011-09-20 2013-04-11 Toshiba Corp 半導体チップのピックアップ方法及び半導体チップのピックアップ装置
DE102011116409B3 (de) * 2011-10-19 2013-03-07 Austriamicrosystems Ag Verfahren zur Herstellung dünner Halbleiterbauelemente
WO2014030699A1 (ja) * 2012-08-23 2014-02-27 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP5480415B1 (ja) * 2012-10-11 2014-04-23 古河電気工業株式会社 半導体ウェハ加工用粘着テープ
KR101994930B1 (ko) 2012-11-05 2019-07-01 삼성전자주식회사 일체형 단위 반도체 칩들을 갖는 반도체 패키지
US9484260B2 (en) * 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US9136173B2 (en) * 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
KR20140123129A (ko) 2013-04-10 2014-10-22 삼성전자주식회사 반도체 패키지
US20160086908A1 (en) * 2013-05-28 2016-03-24 Lintec Corporation Adhesive agent composition, adhesive sheet, and method for manufacturing semiconductor device
KR102474242B1 (ko) * 2015-01-09 2022-12-06 삼성전자주식회사 반도체 패키지 및 그 제조 방법
DE102015100827B4 (de) 2015-01-21 2024-10-02 Infineon Technologies Ag Verfahren zum Bearbeiten eines Halbleitersubstrats
DE102015204698B4 (de) * 2015-03-16 2023-07-20 Disco Corporation Verfahren zum Teilen eines Wafers
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
JP6539919B2 (ja) * 2015-05-25 2019-07-10 リンテック株式会社 半導体装置の製造方法
FR3042906B1 (fr) * 2015-10-23 2018-07-27 Commissariat Energie Atomique Procede d’amincissement d’echantillons
JP6967506B2 (ja) * 2016-02-23 2021-11-17 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
WO2018180594A1 (ja) 2017-03-28 2018-10-04 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP6912254B2 (ja) * 2017-04-05 2021-08-04 株式会社ディスコ 加工方法
US10373869B2 (en) 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
GB201801457D0 (en) * 2018-01-30 2018-03-14 Pragmatic Printing Ltd Integrated circuit manufacturing process and apparatus
JP7214306B2 (ja) * 2018-04-27 2023-01-30 株式会社ディスコ 被加工物の加工方法
US10410905B1 (en) * 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
WO2020004210A1 (ja) * 2018-06-29 2020-01-02 リンテック株式会社 半導体チップの製造方法及び半導体装置の製造方法
US12142549B2 (en) * 2018-07-03 2024-11-12 Texas Instruments Incorporated Wafer stencil for controlling die attach material thickness on die
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
JP7427480B2 (ja) * 2020-03-09 2024-02-05 キオクシア株式会社 半導体装置
JP7446887B2 (ja) 2020-03-30 2024-03-11 リンテック株式会社 フィルム状接着剤
WO2021215247A1 (ja) * 2020-04-23 2021-10-28 三井化学東セロ株式会社 バックグラインド用粘着性フィルムおよび電子装置の製造方法
MY198402A (en) * 2020-12-17 2023-08-28 Inari Tech Sdn Bhd A Method For Fabricating Semiconductor Articles And System Thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002160211A (ja) 2000-11-27 2002-06-04 Murata Mfg Co Ltd 積層セラミック電子部品の製造方法
JP2002367933A (ja) 2001-06-11 2002-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの分離方法
JP2003017513A (ja) * 2001-07-04 2003-01-17 Toshiba Corp 半導体装置の製造方法
JP2006086509A (ja) * 2004-08-17 2006-03-30 Denso Corp 半導体基板の分断方法
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法
WO2008126718A1 (ja) * 2007-04-05 2008-10-23 Hitachi Chemical Company, Ltd. 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5903046A (en) * 1996-02-20 1999-05-11 Micron Technology, Inc. Integrated circuit device having cyanate ester buffer coat
JP3410371B2 (ja) * 1998-08-18 2003-05-26 リンテック株式会社 ウエハ裏面研削時の表面保護シートおよびその利用方法
JP3816253B2 (ja) * 1999-01-19 2006-08-30 富士通株式会社 半導体装置の製造方法
DE19962763C2 (de) * 1999-07-01 2001-07-26 Fraunhofer Ges Forschung Verfahren zum Vereinzeln eines Wafers
KR101312197B1 (ko) * 2000-02-15 2013-09-27 히타치가세이가부시끼가이샤 반도체 장치
JP2002016021A (ja) 2000-06-28 2002-01-18 Toshiba Corp 半導体チップの生産方法及び半導体チップ
JP3485525B2 (ja) * 2000-07-06 2004-01-13 沖電気工業株式会社 半導体装置の製造方法
JP2002043251A (ja) * 2000-07-25 2002-02-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP4708577B2 (ja) * 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
US6790524B2 (en) * 2001-08-02 2004-09-14 Toray Plastics (America), Inc. Biaxially oriented polypropylene metallized film for packaging
US20050009298A1 (en) * 2001-09-20 2005-01-13 Shuichi Suzuki Method for manufacturing semiconductor device
US20060128065A1 (en) 2003-06-06 2006-06-15 Teiichi Inada Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method
JP2005019525A (ja) * 2003-06-24 2005-01-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4406300B2 (ja) * 2004-02-13 2010-01-27 株式会社東芝 半導体装置及びその製造方法
KR100555559B1 (ko) * 2004-03-03 2006-03-03 삼성전자주식회사 백 그라인딩 공정용 표면 보호 테이프를 이용하여 다이싱공정을 수행하는 반도체 장치의 제조 방법
MY138566A (en) * 2004-03-15 2009-06-30 Hitachi Chemical Co Ltd Dicing/die bonding sheet
CN101451053A (zh) * 2004-05-18 2009-06-10 日立化成工业株式会社 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法
US7550367B2 (en) * 2004-08-17 2009-06-23 Denso Corporation Method for separating semiconductor substrate
JP4624813B2 (ja) * 2005-01-21 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
JP2006203133A (ja) * 2005-01-24 2006-08-03 Lintec Corp チップ体の製造方法、デバイスの製造方法およびチップ体固着用粘接着シート
JP4630692B2 (ja) 2005-03-07 2011-02-09 株式会社ディスコ レーザー加工方法
DE102005024431B4 (de) * 2005-05-24 2009-08-06 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterbauteilen unter Verwendung einer Trägerplatte mit doppelseitig klebender Klebstofffolie
JP4285455B2 (ja) * 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4721834B2 (ja) * 2005-09-06 2011-07-13 日東電工株式会社 粘着シート及びこの粘着シートを用いた製品の加工方法
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
JP5275553B2 (ja) * 2006-06-27 2013-08-28 スリーエム イノベイティブ プロパティズ カンパニー 分割チップの製造方法
CN101490813B (zh) * 2006-07-19 2011-07-13 积水化学工业株式会社 切片及芯片键合带以及半导体芯片制造方法
JP2008186959A (ja) * 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
KR101166615B1 (ko) * 2007-04-06 2012-07-18 히다치 가세고교 가부시끼가이샤 반도체용 접착 필름, 복합 시트 및 이들을 사용한 반도체 칩의 제조방법
US8071465B2 (en) * 2007-10-09 2011-12-06 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
CN101821834A (zh) * 2007-10-09 2010-09-01 日立化成工业株式会社 带粘接膜半导体芯片的制造方法及用于该制造方法的半导体用粘接膜、以及半导体装置的制造方法
KR101191121B1 (ko) * 2007-12-03 2012-10-15 주식회사 엘지화학 다이싱 다이본딩 필름 및 다이싱 방법
JP4717085B2 (ja) * 2008-01-18 2011-07-06 日東電工株式会社 ダイシング・ダイボンドフィルム
JP5561949B2 (ja) * 2009-04-08 2014-07-30 日東電工株式会社 熱硬化型ダイボンドフィルム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002160211A (ja) 2000-11-27 2002-06-04 Murata Mfg Co Ltd 積層セラミック電子部品の製造方法
JP2002367933A (ja) 2001-06-11 2002-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの分離方法
JP2003017513A (ja) * 2001-07-04 2003-01-17 Toshiba Corp 半導体装置の製造方法
JP2006086509A (ja) * 2004-08-17 2006-03-30 Denso Corp 半導体基板の分断方法
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法
WO2008126718A1 (ja) * 2007-04-05 2008-10-23 Hitachi Chemical Company, Ltd. 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2200074A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028598A (ja) * 2010-07-26 2012-02-09 Furukawa Electric Co Ltd:The ウエハ加工用テープ
JP2015503220A (ja) * 2011-11-02 2015-01-29 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子部品用接着剤
WO2016140248A1 (ja) * 2015-03-04 2016-09-09 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JPWO2016140248A1 (ja) * 2015-03-04 2017-12-14 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
JP2017117959A (ja) * 2015-12-24 2017-06-29 リンテック株式会社 半導体ウエハの加工方法、半導体チップの製造方法及び加工半導体ウエハ

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