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WO2009044666A1 - 感放射線性組成物 - Google Patents

感放射線性組成物 Download PDF

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Publication number
WO2009044666A1
WO2009044666A1 PCT/JP2008/067389 JP2008067389W WO2009044666A1 WO 2009044666 A1 WO2009044666 A1 WO 2009044666A1 JP 2008067389 W JP2008067389 W JP 2008067389W WO 2009044666 A1 WO2009044666 A1 WO 2009044666A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
sensitive composition
repeating unit
represented
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067389
Other languages
English (en)
French (fr)
Inventor
Yukio Nishimura
Yuusuke Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP2009536024A priority Critical patent/JP5077353B2/ja
Publication of WO2009044666A1 publication Critical patent/WO2009044666A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

　下記一般式（１－１）で表される繰り返し単位（１）、下記一般式（１－２）で表される繰り返し単位（２）、及び酸解離性基を有する繰り返し単位（３）を含む重合体（Ａ）と、感放射線性酸発生剤（Ｂ）と、を含有する感放射線性組成物である。
PCT/JP2008/067389 2007-10-01 2008-09-26 感放射線性組成物 Ceased WO2009044666A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009536024A JP5077353B2 (ja) 2007-10-01 2008-09-26 感放射線性組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-257633 2007-10-01
JP2007257633 2007-10-01
JP2007-334726 2007-12-26
JP2007334726 2007-12-26

Publications (1)

Publication Number Publication Date
WO2009044666A1 true WO2009044666A1 (ja) 2009-04-09

Family

ID=40526095

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067389 Ceased WO2009044666A1 (ja) 2007-10-01 2008-09-26 感放射線性組成物

Country Status (3)

Country Link
JP (1) JP5077353B2 (ja)
TW (1) TW200923579A (ja)
WO (1) WO2009044666A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108665A1 (ja) * 2010-03-04 2011-09-09 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111747966A (zh) * 2020-06-16 2020-10-09 徐州博康信息化学品有限公司 一种三氟磺酰胺2-氧杂二环[2.2.1]庚烷类光刻胶树脂单体及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003270787A (ja) * 2002-03-15 2003-09-25 Jsr Corp 感放射線性樹脂組成物
JP2003342323A (ja) * 2002-05-28 2003-12-03 Everlight Usa Inc 化学増幅型ホトレジスト組成物の樹脂
JP2003345025A (ja) * 2002-05-28 2003-12-03 Everlight Usa Inc 化学増幅型ホトレジスト組成物
JP2005060638A (ja) * 2003-08-20 2005-03-10 Mitsubishi Rayon Co Ltd 重合体、製造方法、レジスト組成物およびパターン形成法
JP2006349940A (ja) * 2005-06-15 2006-12-28 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003270787A (ja) * 2002-03-15 2003-09-25 Jsr Corp 感放射線性樹脂組成物
JP2003342323A (ja) * 2002-05-28 2003-12-03 Everlight Usa Inc 化学増幅型ホトレジスト組成物の樹脂
JP2003345025A (ja) * 2002-05-28 2003-12-03 Everlight Usa Inc 化学増幅型ホトレジスト組成物
JP2005060638A (ja) * 2003-08-20 2005-03-10 Mitsubishi Rayon Co Ltd 重合体、製造方法、レジスト組成物およびパターン形成法
JP2006349940A (ja) * 2005-06-15 2006-12-28 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108665A1 (ja) * 2010-03-04 2011-09-09 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JPWO2011108665A1 (ja) * 2010-03-04 2013-06-27 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
TW200923579A (en) 2009-06-01
JPWO2009044666A1 (ja) 2011-02-03
JP5077353B2 (ja) 2012-11-21

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