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TW200923579A - Radiation-sensitive composition - Google Patents

Radiation-sensitive composition Download PDF

Info

Publication number
TW200923579A
TW200923579A TW97137305A TW97137305A TW200923579A TW 200923579 A TW200923579 A TW 200923579A TW 97137305 A TW97137305 A TW 97137305A TW 97137305 A TW97137305 A TW 97137305A TW 200923579 A TW200923579 A TW 200923579A
Authority
TW
Taiwan
Prior art keywords
group
linear
methyl
meth
general formula
Prior art date
Application number
TW97137305A
Other languages
English (en)
Chinese (zh)
Inventor
Yukio Nishimura
Yuusuke Asano
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200923579A publication Critical patent/TW200923579A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
TW97137305A 2007-10-01 2008-09-26 Radiation-sensitive composition TW200923579A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007257633 2007-10-01
JP2007334726 2007-12-26

Publications (1)

Publication Number Publication Date
TW200923579A true TW200923579A (en) 2009-06-01

Family

ID=40526095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW97137305A TW200923579A (en) 2007-10-01 2008-09-26 Radiation-sensitive composition

Country Status (3)

Country Link
JP (1) JP5077353B2 (ja)
TW (1) TW200923579A (ja)
WO (1) WO2009044666A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111747966A (zh) * 2020-06-16 2020-10-09 徐州博康信息化学品有限公司 一种三氟磺酰胺2-氧杂二环[2.2.1]庚烷类光刻胶树脂单体及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011108665A1 (ja) * 2010-03-04 2013-06-27 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3975790B2 (ja) * 2002-03-15 2007-09-12 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6639035B1 (en) * 2002-05-28 2003-10-28 Everlight Usa, Inc. Polymer for chemical amplified photoresist compositions
US6703178B2 (en) * 2002-05-28 2004-03-09 Everlight Usa, Inc. Chemical amplified photoresist compositions
JP2005060638A (ja) * 2003-08-20 2005-03-10 Mitsubishi Rayon Co Ltd 重合体、製造方法、レジスト組成物およびパターン形成法
JP4713235B2 (ja) * 2005-06-15 2011-06-29 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111747966A (zh) * 2020-06-16 2020-10-09 徐州博康信息化学品有限公司 一种三氟磺酰胺2-氧杂二环[2.2.1]庚烷类光刻胶树脂单体及其制备方法

Also Published As

Publication number Publication date
JP5077353B2 (ja) 2012-11-21
JPWO2009044666A1 (ja) 2011-02-03
WO2009044666A1 (ja) 2009-04-09

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