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WO2009041189A1 - 気化器及び成膜装置 - Google Patents

気化器及び成膜装置 Download PDF

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Publication number
WO2009041189A1
WO2009041189A1 PCT/JP2008/064779 JP2008064779W WO2009041189A1 WO 2009041189 A1 WO2009041189 A1 WO 2009041189A1 JP 2008064779 W JP2008064779 W JP 2008064779W WO 2009041189 A1 WO2009041189 A1 WO 2009041189A1
Authority
WO
WIPO (PCT)
Prior art keywords
ventilating member
liquid material
inlet
ventilating
vaporizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064779
Other languages
English (en)
French (fr)
Inventor
Sumi Tanaka
Munehisa Futamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2008800225671A priority Critical patent/CN101689499B/zh
Priority to KR1020097027029A priority patent/KR101244096B1/ko
Publication of WO2009041189A1 publication Critical patent/WO2009041189A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

　液体原料の液滴を通気性部材を通して気化させる際に，通気性部材全体の温度を均一にして，気化しきれずに目詰まりを起こすことを防止する。 　液滴状の液体原料を導入する導入口（３５４）と，導入口に対向して配置され，通電により発熱する電気抵抗を有する部材で構成された板状の通気性部材（４１０）と，通気性部材を挟み込むように対向して配置された一対の電極（４２０，４３０）と，一対の電極を介して通気性部材を通電して発熱させる交流電源（３８０）と，導入口からの液滴状の液体原料を発熱した通気性部材の内部に通して気化させることにより生成された原料ガスを外部に送出する送出口（１３２）とを備える。
PCT/JP2008/064779 2007-09-28 2008-08-20 気化器及び成膜装置 Ceased WO2009041189A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800225671A CN101689499B (zh) 2007-09-28 2008-08-20 气化器和成膜装置
KR1020097027029A KR101244096B1 (ko) 2007-09-28 2008-08-20 기화기 및 성막 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007254625A JP5179823B2 (ja) 2007-09-28 2007-09-28 気化器及び成膜装置
JP2007-254625 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041189A1 true WO2009041189A1 (ja) 2009-04-02

Family

ID=40511083

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064779 Ceased WO2009041189A1 (ja) 2007-09-28 2008-08-20 気化器及び成膜装置

Country Status (5)

Country Link
JP (1) JP5179823B2 (ja)
KR (1) KR101244096B1 (ja)
CN (1) CN101689499B (ja)
TW (1) TW200932368A (ja)
WO (1) WO2009041189A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101920256A (zh) * 2009-06-12 2010-12-22 东京毅力科创株式会社 等离子体处理装置用的消耗部件的再利用方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101084997B1 (ko) * 2011-06-30 2011-11-18 (주)그랜드 텍 캐리어 기체에 의한 화합물 기화용 버블러
JP5426616B2 (ja) * 2011-07-15 2014-02-26 株式会社リンテック 気化器及び該気化器を備えた液体原料気化供給装置
KR101721681B1 (ko) * 2016-03-24 2017-03-30 (주)티티에스 기화기
WO2020021796A1 (ja) 2018-07-24 2020-01-30 株式会社リンテック 気化器
JP6694093B2 (ja) * 2018-07-24 2020-05-13 株式会社リンテック 気化器
JP7201372B2 (ja) * 2018-09-11 2023-01-10 株式会社アルバック アクリル気化器
JP7556128B2 (ja) * 2020-07-27 2024-09-25 江蘇菲沃泰納米科技股▲フン▼有限公司 原料気化装置、コーティング装置、コーティング機器及びその材料投入方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06300197A (ja) * 1993-04-14 1994-10-28 Canon Inc 液体原料気化供給装置
JPH07263361A (ja) * 1994-03-25 1995-10-13 Tokyo Electron Ltd 処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000000946A (ko) * 1998-06-05 2000-01-15 주재현 기화기 및 이를 사용한 화학 기상 증착장치
JP2005057193A (ja) 2003-08-07 2005-03-03 Shimadzu Corp 気化器
JP4263206B2 (ja) * 2005-11-15 2009-05-13 東京エレクトロン株式会社 熱処理方法、熱処理装置及び気化装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06300197A (ja) * 1993-04-14 1994-10-28 Canon Inc 液体原料気化供給装置
JPH07263361A (ja) * 1994-03-25 1995-10-13 Tokyo Electron Ltd 処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101920256A (zh) * 2009-06-12 2010-12-22 东京毅力科创株式会社 等离子体处理装置用的消耗部件的再利用方法

Also Published As

Publication number Publication date
JP2009088157A (ja) 2009-04-23
KR101244096B1 (ko) 2013-03-18
JP5179823B2 (ja) 2013-04-10
CN101689499A (zh) 2010-03-31
CN101689499B (zh) 2011-11-30
KR20100057760A (ko) 2010-06-01
TW200932368A (en) 2009-08-01

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