KR101084997B1 - 캐리어 기체에 의한 화합물 기화용 버블러 - Google Patents
캐리어 기체에 의한 화합물 기화용 버블러 Download PDFInfo
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- KR101084997B1 KR101084997B1 KR1020110064788A KR20110064788A KR101084997B1 KR 101084997 B1 KR101084997 B1 KR 101084997B1 KR 1020110064788 A KR1020110064788 A KR 1020110064788A KR 20110064788 A KR20110064788 A KR 20110064788A KR 101084997 B1 KR101084997 B1 KR 101084997B1
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- carrier gas
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- bubbler
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- compound
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- H01L21/205—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
도 2는 도 1의 실시예에 도시된 버블러의 주요부를 분리한 사시도.
도 3은 도 1의 실시예에 채용된 제1산기부재의 저면 사시도.
도 4는 도 1의 실시예에 도시된 버블러 주요부의 단면도.
1 : 플레이트
11 : 안착홈 111 : 결합홈 12 : 공급홀 13 : 수평홈
2 : 제1산기부재
21 : 바디 211 : 유로 212 : 중앙부 213 : 배출구
22 : 플랜지부 221 : 나사공
3 : 제2산기부재
31 : 원판부 311 : 통과홀 32 : 플랜지
4 : 제3산기부재
10 : 용기 20 : 밸브장치 210 : 공급라인
220 : 공급용 밸브 230 : 배출용 밸브 240 : 재킷
Claims (7)
- 반응물질이 수용된 용기를 포함하는 버블러에 장착되는 것으로,
상기 용기 내부의 하부에 구비되는 플레이트,
상기 플레이트에 장착되며 외부에서 공급된 캐리어 가스를 방사상으로 분사시키는 제1산기부재
상기 제1산기부재의 상부에 설치되며, 상승하는 캐리어 가스가 분산되어 통과하는 복수의 통과홀이 상하 관통되어 있는 제2산기부재 그리고
상기 제2산기부재의 상부에 설치되며, 상승하는 캐리어 가스가 통과하는 다공성물질로 이루어진 제3산기부재를 포함하는 것을 특징으로 하는 캐리어 기체에 의한 화합물 기화용 버블러. - 제1항에서,
상기 제1산기부재, 상기 제2산기부재 및 상기 제3산기부재는 상기 캐리어 가스의 상승에 따라 상기 캐리어 가스가 통과 가능한 처리면적이 순차적으로 증대되는 것을 특징으로 하는 캐리어 기체에 의한 화합물 기화용 버블러. - 제2항에서,
상기 제1산기부재, 상기 제2산기부재 및 상기 제3산기부재의 각 처리면적의 비율은 1 : 4 : 20 내지 1 : 12 : 36 인 것을 특징으로 하는 캐리어 기체에 의한 화합물 기화용 버블러. - 제2항에서,
상기 제1산기부재, 상기 제2산기부재 및 상기 제3산기부재는,
상기 플레이트에 다단으로 형성된 안착홈들에 순차적으로 서로 이격되게 결합되어 있는 캐리어 기체에 의한 화합물 기화용 버블러. - 제1항에서,
상기 플레이트의 바닥에는 상기 캐리어 가스가 토출되는 공급홀이 형성되어 있고,
상기 제1산기부재에는 상기 공급홀에서 상승하는 상기 캐리어 가스의 진행 방향을 전환하여 방사상으로 형성된 복수의 배출구로 분산하여 토출되게 하는 방사상의 유로가 형성되어 있는 것을 특징으로 하는 캐리어 기체에 의한 화합물 기화용 버블러. - 제5항에서,
상기 유로는 상기 제1산기부재의 중심에서 상기 배출구를 향하여 어느 한 방향으로 휘어진 형상인 것을 특징으로 하는 캐리어 기체에 의한 화합물 기화용 버블러. - 제1항에서,
상기 제2산기부재에서,
상기 복수의 통과홀은 중심에서 가장자리로 갈수록 내경이 점차 증대되는 것을 특징으로 하는 캐리어 기체에 의한 화합물 기화용 버블러.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110064788A KR101084997B1 (ko) | 2011-06-30 | 2011-06-30 | 캐리어 기체에 의한 화합물 기화용 버블러 |
| PCT/KR2012/005110 WO2013002567A2 (ko) | 2011-06-30 | 2012-06-28 | 캐리어 기체에 의한 화합물 기화용 버블러 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110064788A KR101084997B1 (ko) | 2011-06-30 | 2011-06-30 | 캐리어 기체에 의한 화합물 기화용 버블러 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101084997B1 true KR101084997B1 (ko) | 2011-11-18 |
Family
ID=45397941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110064788A Expired - Fee Related KR101084997B1 (ko) | 2011-06-30 | 2011-06-30 | 캐리어 기체에 의한 화합물 기화용 버블러 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101084997B1 (ko) |
| WO (1) | WO2013002567A2 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102207310B1 (ko) * | 2019-09-24 | 2021-01-26 | 세메스 주식회사 | 가스 공급 유닛 및 이를 가지는 기판 처리 장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335243A (ja) * | 1992-06-03 | 1993-12-17 | Mitsubishi Electric Corp | 液体バブリング装置 |
| KR20000000946A (ko) * | 1998-06-05 | 2000-01-15 | 주재현 | 기화기 및 이를 사용한 화학 기상 증착장치 |
| US7967911B2 (en) * | 2006-04-11 | 2011-06-28 | Applied Materials, Inc. | Apparatus and methods for chemical vapor deposition |
| JP5179823B2 (ja) * | 2007-09-28 | 2013-04-10 | 東京エレクトロン株式会社 | 気化器及び成膜装置 |
-
2011
- 2011-06-30 KR KR1020110064788A patent/KR101084997B1/ko not_active Expired - Fee Related
-
2012
- 2012-06-28 WO PCT/KR2012/005110 patent/WO2013002567A2/ko not_active Ceased
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102207310B1 (ko) * | 2019-09-24 | 2021-01-26 | 세메스 주식회사 | 가스 공급 유닛 및 이를 가지는 기판 처리 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013002567A2 (ko) | 2013-01-03 |
| WO2013002567A3 (ko) | 2013-04-11 |
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