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WO2008136502A1 - バルブ開閉動作確認方法、ガス処理装置および記憶媒体 - Google Patents

バルブ開閉動作確認方法、ガス処理装置および記憶媒体 Download PDF

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Publication number
WO2008136502A1
WO2008136502A1 PCT/JP2008/058369 JP2008058369W WO2008136502A1 WO 2008136502 A1 WO2008136502 A1 WO 2008136502A1 JP 2008058369 W JP2008058369 W JP 2008058369W WO 2008136502 A1 WO2008136502 A1 WO 2008136502A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
judged
storage medium
treatment device
gas treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058369
Other languages
English (en)
French (fr)
Inventor
Tamaki Takeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2008136502A1 publication Critical patent/WO2008136502A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)

Abstract

チャンバ内のベース圧を形成し、バルブを閉指令が与えられた状態として、複数のガスラインにラインフィルモードでガスを流し、チャンバ内圧力がトレランスを超えたか否かを判断し、トレランスを超えた際に、実際には閉じていないバルブが存在すると判断してアラームを発生し、トレランスを超えていない場合に、複数のバルブを開指令が与えられた状態として、複数のガスラインに流量を制御しつつガスを流し、ガス流量がトレランスを下回ったか否かを判断し、トレランスを下回った際に、そのガスラインのバルブが実際には開いていないと判断し、アラームを発生し、ガス流量がトレランスを下回ったラインが存在しない場合に異常なしとする。
PCT/JP2008/058369 2007-05-02 2008-05-01 バルブ開閉動作確認方法、ガス処理装置および記憶媒体 Ceased WO2008136502A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-121962 2007-05-02
JP2007121962A JP2008277666A (ja) 2007-05-02 2007-05-02 バルブ開閉動作確認方法、ガス処理装置および記憶媒体

Publications (1)

Publication Number Publication Date
WO2008136502A1 true WO2008136502A1 (ja) 2008-11-13

Family

ID=39943607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058369 Ceased WO2008136502A1 (ja) 2007-05-02 2008-05-01 バルブ開閉動作確認方法、ガス処理装置および記憶媒体

Country Status (3)

Country Link
JP (1) JP2008277666A (ja)
TW (1) TW200909607A (ja)
WO (1) WO2008136502A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010126797A (ja) * 2008-11-28 2010-06-10 Tokyo Electron Ltd 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体
WO2012166748A1 (en) 2011-05-27 2012-12-06 Crystal Solar, Inc. Silicon wafers by epitaxial deposition
JP6107327B2 (ja) 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
JP6441050B2 (ja) * 2014-12-01 2018-12-19 東京エレクトロン株式会社 成膜方法
JP6869765B2 (ja) * 2017-03-23 2021-05-12 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
JP6971805B2 (ja) * 2017-11-28 2021-11-24 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
CN113948358B (zh) * 2020-07-17 2024-03-12 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及半导体结构的形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638449U (ja) * 1979-09-03 1981-04-11
JPH06281052A (ja) * 1993-03-22 1994-10-07 Nippon Steel Corp 高純度ガス配管系のバルブ開閉チェック方法
JPH0977593A (ja) * 1995-09-14 1997-03-25 Nissan Motor Co Ltd 化学的気相成長法及び化学的気相成長装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638449U (ja) * 1979-09-03 1981-04-11
JPH06281052A (ja) * 1993-03-22 1994-10-07 Nippon Steel Corp 高純度ガス配管系のバルブ開閉チェック方法
JPH0977593A (ja) * 1995-09-14 1997-03-25 Nissan Motor Co Ltd 化学的気相成長法及び化学的気相成長装置

Also Published As

Publication number Publication date
JP2008277666A (ja) 2008-11-13
TW200909607A (en) 2009-03-01

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