[go: up one dir, main page]

WO2008136502A1 - Valve open/close operation check method, gas treatment device, and storage medium - Google Patents

Valve open/close operation check method, gas treatment device, and storage medium Download PDF

Info

Publication number
WO2008136502A1
WO2008136502A1 PCT/JP2008/058369 JP2008058369W WO2008136502A1 WO 2008136502 A1 WO2008136502 A1 WO 2008136502A1 JP 2008058369 W JP2008058369 W JP 2008058369W WO 2008136502 A1 WO2008136502 A1 WO 2008136502A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
judged
storage medium
treatment device
gas treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058369
Other languages
French (fr)
Japanese (ja)
Inventor
Tamaki Takeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2008136502A1 publication Critical patent/WO2008136502A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)

Abstract

A base pressure in a chamber is formed and valves are set to the state that a valve close instruction is given. A gas is fed to a plurality of gas lines at a line-fill mode and it is judged whether the pressure in the chamber exceeds a tolerance. If YES, it is judged that there exists a valve not closed and an alarm is generated. If NO, it is judged that a plurality of valves are set to the state that an open instruction is given and the gas is fed to the plurality of gas lines while controlling the flow rate. Check is made to determine whether the gas flow rate is below the tolerance. If YES, it is judged that the valve of the gas line is not actually opened and an alarm is generated. If NO, it is judged that no trouble is present.
PCT/JP2008/058369 2007-05-02 2008-05-01 Valve open/close operation check method, gas treatment device, and storage medium Ceased WO2008136502A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-121962 2007-05-02
JP2007121962A JP2008277666A (en) 2007-05-02 2007-05-02 Valve switching operation checking method, gas processing apparatus, and storage medium

Publications (1)

Publication Number Publication Date
WO2008136502A1 true WO2008136502A1 (en) 2008-11-13

Family

ID=39943607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058369 Ceased WO2008136502A1 (en) 2007-05-02 2008-05-01 Valve open/close operation check method, gas treatment device, and storage medium

Country Status (3)

Country Link
JP (1) JP2008277666A (en)
TW (1) TW200909607A (en)
WO (1) WO2008136502A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010126797A (en) * 2008-11-28 2010-06-10 Tokyo Electron Ltd Film deposition system, semiconductor fabrication apparatus, susceptor for use in the same, program and computer readable storage medium
WO2012166748A1 (en) 2011-05-27 2012-12-06 Crystal Solar, Inc. Silicon wafers by epitaxial deposition
JP6107327B2 (en) 2013-03-29 2017-04-05 東京エレクトロン株式会社 Film forming apparatus, gas supply apparatus, and film forming method
JP6441050B2 (en) * 2014-12-01 2018-12-19 東京エレクトロン株式会社 Deposition method
JP6869765B2 (en) * 2017-03-23 2021-05-12 株式会社日立ハイテク Plasma processing equipment and plasma processing method
JP6971805B2 (en) * 2017-11-28 2021-11-24 株式会社日立ハイテク Plasma processing equipment and plasma processing method
CN113948358B (en) * 2020-07-17 2024-03-12 中微半导体设备(上海)股份有限公司 Plasma processing device and method for forming semiconductor structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638449U (en) * 1979-09-03 1981-04-11
JPH06281052A (en) * 1993-03-22 1994-10-07 Nippon Steel Corp Valve opening/closing checking method for high purity gas piping system
JPH0977593A (en) * 1995-09-14 1997-03-25 Nissan Motor Co Ltd Chemical vapor deposition method and chemical vapor deposition apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638449U (en) * 1979-09-03 1981-04-11
JPH06281052A (en) * 1993-03-22 1994-10-07 Nippon Steel Corp Valve opening/closing checking method for high purity gas piping system
JPH0977593A (en) * 1995-09-14 1997-03-25 Nissan Motor Co Ltd Chemical vapor deposition method and chemical vapor deposition apparatus

Also Published As

Publication number Publication date
JP2008277666A (en) 2008-11-13
TW200909607A (en) 2009-03-01

Similar Documents

Publication Publication Date Title
WO2008136502A1 (en) Valve open/close operation check method, gas treatment device, and storage medium
IL188014A0 (en) Diaphragm latch valve
WO2009013606A3 (en) Fuel cell vehicle and control method therefor
NO20100677L (en) Power controllers of permeable medium for use in hydrocarbon production
WO2011148244A3 (en) Automatic flow regulator valve
MX2010008983A (en) Flow stop valve.
WO2007109664A3 (en) Modulating gas valves and systems
GB2437306B (en) Autonomous shut-off valve system
EP2386026A2 (en) Fluid-working machine valve timing
ATE454568T1 (en) CLUTCH SYSTEM
EA201291349A1 (en) METHOD AND DEVICE FOR ISSUING BEVERAGES, ESPECIALLY GASED BEVERAGES
MX2009001580A (en) Method of producing liquid receiving body, and liquid receiving body.
NZ601172A (en) Valve assembly
WO2012056280A8 (en) Fuel supply system
NO20074842L (en) Service friendly valve for fire extinguishing systems
WO2005069816A3 (en) Diaphragm valve with pivoting closure member
WO2008105308A1 (en) Flow path selection system
NO20064883L (en) Valve, actuator and control system for this
MY176256A (en) Shutoff valve integrated into a pressure regulator
WO2007136942A3 (en) Seal for water valve
WO2008145970A3 (en) Pressure regulator valve
WO2010039758A3 (en) Pressure relief valve
WO2009080634A3 (en) Blocking element for fluid media, non-return flap comprising a blocking element, and structural unit formed therefrom
WO2010144596A3 (en) Compressor freeze up prevention in cold weather
EP2087263A4 (en) A flow control valve, typically a check valve for cryogenic, oxygen and high pressure air valves

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08741003

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08741003

Country of ref document: EP

Kind code of ref document: A1