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WO2008133139A1 - ダミー基板及びそれを用いた成膜装置の始動方法、成膜条件の維持・変更方法並びに停止方法 - Google Patents

ダミー基板及びそれを用いた成膜装置の始動方法、成膜条件の維持・変更方法並びに停止方法 Download PDF

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Publication number
WO2008133139A1
WO2008133139A1 PCT/JP2008/057423 JP2008057423W WO2008133139A1 WO 2008133139 A1 WO2008133139 A1 WO 2008133139A1 JP 2008057423 W JP2008057423 W JP 2008057423W WO 2008133139 A1 WO2008133139 A1 WO 2008133139A1
Authority
WO
WIPO (PCT)
Prior art keywords
dummy substrate
film forming
sputtering
thin film
compound thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057423
Other languages
English (en)
French (fr)
Inventor
Koji Ishino
Hajime Nakamura
Mayako Matsuda
Takaaki Shindou
Yukio Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to US12/596,303 priority Critical patent/US9011654B2/en
Priority to KR1020097023285A priority patent/KR101122309B1/ko
Priority to JP2009511823A priority patent/JP5015241B2/ja
Priority to CN2008800123574A priority patent/CN101657563B/zh
Publication of WO2008133139A1 publication Critical patent/WO2008133139A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12361—All metal or with adjacent metals having aperture or cut

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　このダミー基板は、インライン式反応性スパッタ装置に用いられるダミー基板であり、その本体は、矩形状の金属板に相似形状の開口部が形成された矩形板状の枠体からなるもので、この本体により、キャリアの本体との接触部分を覆う構成である。これにより、スパッタ装置を稼働している間においても、ガラス割れ等の不具合が生じるおそれが無く、ダミー基板の使用回数を大幅に高めることができる。また、ダミー基板がキャリアとの接触部分を覆い続けることで、このキャリアの基板との接触部分にスパッタ成膜室内に残存する物質、特に化合物薄膜が堆積するのを防止することができ、化合物薄膜の堆積に起因する異常放電等の不具合を防止することができる。これらの結果、スパッタ法により化合物薄膜を成膜する装置の始動（立ち上げ）、その装置の成膜条件の維持、変更、その装置の停止（立ち下げ）を、従来より短時間で、しかも効率的かつ低コストにて行うことができる。
PCT/JP2008/057423 2007-04-18 2008-04-16 ダミー基板及びそれを用いた成膜装置の始動方法、成膜条件の維持・変更方法並びに停止方法 Ceased WO2008133139A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/596,303 US9011654B2 (en) 2007-04-18 2008-04-16 Dummy substrate, and start method of, retention/modification method of deposition condition, and stop method of deposition apparatus using same
KR1020097023285A KR101122309B1 (ko) 2007-04-18 2008-04-16 더미 기판 및 그것을 사용한 성막 장치의 시동 방법, 성막 조건의 유지?변경 방법 및 정지 방법
JP2009511823A JP5015241B2 (ja) 2007-04-18 2008-04-16 ダミー基板及びそれを用いた成膜装置の始動方法、成膜条件の維持・変更方法並びに停止方法
CN2008800123574A CN101657563B (zh) 2007-04-18 2008-04-16 伪基板和使用该伪基板的成膜装置的启动方法、成膜条件的维持或变更方法及停止方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007109275 2007-04-18
JP2007-109275 2007-04-18

Publications (1)

Publication Number Publication Date
WO2008133139A1 true WO2008133139A1 (ja) 2008-11-06

Family

ID=39925595

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057423 Ceased WO2008133139A1 (ja) 2007-04-18 2008-04-16 ダミー基板及びそれを用いた成膜装置の始動方法、成膜条件の維持・変更方法並びに停止方法

Country Status (6)

Country Link
US (1) US9011654B2 (ja)
JP (1) JP5015241B2 (ja)
KR (1) KR101122309B1 (ja)
CN (1) CN101657563B (ja)
TW (1) TWI428461B (ja)
WO (1) WO2008133139A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010255052A (ja) * 2009-04-24 2010-11-11 Ulvac Japan Ltd スパッタリング方法
JP2015189503A (ja) * 2014-03-28 2015-11-02 旭化成ケミカルズ株式会社 ベールの収納方法、ベール収納装置、ベール包装体製造方法、ベール包装体製造装置、及びベール包装体
KR20180083259A (ko) 2017-01-12 2018-07-20 가부시키가이샤 아루박 기판 홀더, 종형 기판 반송 장치 및 기판 처리 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008015982B3 (de) * 2008-03-27 2009-07-30 Grenzebach Maschinenbau Gmbh Verfahren und Vorrichtung zur Fixierung und den Weitertransport stoßempfindlicher Platten in Sputter-Beschichtungsanlagen, Computerprogramm zur Durchführung des Verfahrens und maschinenlesbarer Träger hierzu
TWI564950B (zh) * 2014-03-06 2017-01-01 金載鵬 基板運送方法
US20160349621A1 (en) * 2014-12-15 2016-12-01 Applied Materials, Inc. Methods for texturing a chamber component and chamber components having a textured surface
CN105083980B (zh) * 2015-06-10 2017-12-01 合肥京东方光电科技有限公司 溅射设备及其基板承载装置
WO2019240029A1 (ja) * 2018-06-15 2019-12-19 株式会社アルバック 真空処理装置、ダミー基板装置
EP4053304A1 (en) * 2021-03-01 2022-09-07 Bühler Alzenau GmbH Coater conditioning mode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570952A (ja) * 1991-09-18 1993-03-23 Hitachi Ltd インライン式スパツタ装置およびその運転方法
JPH11152564A (ja) * 1997-11-17 1999-06-08 Murata Mfg Co Ltd プリスパッタ方法および装置
JP2003229369A (ja) * 2002-02-06 2003-08-15 Mitsubishi Heavy Ind Ltd 真空処理装置におけるプラズマ安定化方法及びダミー基板
JP2004111550A (ja) * 2002-09-17 2004-04-08 Mitsubishi Heavy Ind Ltd ダミー基板及びこれが固定された真空処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316283A (ja) * 1995-05-19 1996-11-29 Kobe Steel Ltd ダミーウエハー
JPH10265940A (ja) * 1997-03-28 1998-10-06 Canon Inc 成膜用メタルマスク及びその製造方法
JP2001093262A (ja) * 1999-09-21 2001-04-06 Internatl Business Mach Corp <Ibm> ディスクドライブ装置、ディスクドライブ装置の組付け方法およびダミーディスク
JP3315675B2 (ja) * 1999-12-15 2002-08-19 株式会社半導体先端テクノロジーズ ダミーウェハおよび熱処理方法
US6517908B1 (en) * 2000-01-10 2003-02-11 Nec Electronics, Inc. Method for making a test wafer from a substrate
JP3760370B2 (ja) * 2000-08-18 2006-03-29 株式会社村田製作所 インライン式スパッタ装置
US6460674B1 (en) * 2001-03-22 2002-10-08 Borgwarner, Inc. Clutch face finish and clutch pack utilizing same
CN100485848C (zh) * 2003-12-31 2009-05-06 中芯国际集成电路制造(上海)有限公司 穿透式电子显微镜试片的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570952A (ja) * 1991-09-18 1993-03-23 Hitachi Ltd インライン式スパツタ装置およびその運転方法
JPH11152564A (ja) * 1997-11-17 1999-06-08 Murata Mfg Co Ltd プリスパッタ方法および装置
JP2003229369A (ja) * 2002-02-06 2003-08-15 Mitsubishi Heavy Ind Ltd 真空処理装置におけるプラズマ安定化方法及びダミー基板
JP2004111550A (ja) * 2002-09-17 2004-04-08 Mitsubishi Heavy Ind Ltd ダミー基板及びこれが固定された真空処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010255052A (ja) * 2009-04-24 2010-11-11 Ulvac Japan Ltd スパッタリング方法
JP2015189503A (ja) * 2014-03-28 2015-11-02 旭化成ケミカルズ株式会社 ベールの収納方法、ベール収納装置、ベール包装体製造方法、ベール包装体製造装置、及びベール包装体
KR20180083259A (ko) 2017-01-12 2018-07-20 가부시키가이샤 아루박 기판 홀더, 종형 기판 반송 장치 및 기판 처리 장치

Also Published As

Publication number Publication date
US9011654B2 (en) 2015-04-21
TW200909602A (en) 2009-03-01
TWI428461B (zh) 2014-03-01
CN101657563A (zh) 2010-02-24
KR101122309B1 (ko) 2012-03-21
US20100175990A1 (en) 2010-07-15
JP5015241B2 (ja) 2012-08-29
KR20090127378A (ko) 2009-12-10
JPWO2008133139A1 (ja) 2010-07-22
CN101657563B (zh) 2011-09-28

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