[go: up one dir, main page]

WO2008123459A1 - 半導体ウエーハのエッジ検査装置及びエッジ検査方法 - Google Patents

半導体ウエーハのエッジ検査装置及びエッジ検査方法 Download PDF

Info

Publication number
WO2008123459A1
WO2008123459A1 PCT/JP2008/056209 JP2008056209W WO2008123459A1 WO 2008123459 A1 WO2008123459 A1 WO 2008123459A1 JP 2008056209 W JP2008056209 W JP 2008056209W WO 2008123459 A1 WO2008123459 A1 WO 2008123459A1
Authority
WO
WIPO (PCT)
Prior art keywords
inspecting
thetav
outer circumference
image
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/056209
Other languages
English (en)
French (fr)
Inventor
Yoshinori Hayashi
Hideki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to DE112008000723T priority Critical patent/DE112008000723A5/de
Priority to KR1020097018744A priority patent/KR101099264B1/ko
Priority to JP2009509235A priority patent/JP5344699B2/ja
Priority to US12/531,429 priority patent/US8194241B2/en
Publication of WO2008123459A1 publication Critical patent/WO2008123459A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8841—Illumination and detection on two sides of object

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

【課題】欠陥有無についての検査と同じ工程あるいは同じ装置にて半導体ウエーハの外周エッジ部分の形状の検査を容易に行なうことのできる半導体ウエーハのエッジ検査装置及びエッジ検査方法を提供することである。 【解決手段】半導体ウエーハ１００の外周エッジ部分１０１を周方向に順次撮影して画像信号を出力するＣＣＤカメラ１０と、ＣＣＤカメラ１０から順次出力される画像信号を処理する画像処理ユニット２０とを有し、画像処理ユニット２０は、前記画像信号から半導体ウエーハ１００の外周エッジ部分１０１を表す画像情報を生成する画像情報生成手段（Ｓ２）と、前記画像情報から外周エッジ部分１０１の複数位置θそれぞれでの形状を表すエッジ形状情報Ａｐ（θ）、Ｕｂ（θ）、Ｌｂ（θ）を生成する形状情報生成手段（Ｓ１３）とを有し、前記エッジ形状情報に基づいた検査結果を出力するように構成される。
PCT/JP2008/056209 2007-03-30 2008-03-28 半導体ウエーハのエッジ検査装置及びエッジ検査方法 Ceased WO2008123459A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112008000723T DE112008000723A5 (de) 2007-03-30 2008-03-28 Vorrichtung und Verfahren zum Prüfen der Kante eines Halbleiterwafers
KR1020097018744A KR101099264B1 (ko) 2007-03-30 2008-03-28 반도체 웨이퍼의 가장자리 검사 장치 및 가장자리 검사 방법
JP2009509235A JP5344699B2 (ja) 2007-03-30 2008-03-28 半導体ウエーハのエッジ検査装置及びエッジ検査方法
US12/531,429 US8194241B2 (en) 2007-03-30 2008-03-28 Apparatus and method for inspecting edge of semiconductor wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-091343 2007-03-30
JP2007091343 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008123459A1 true WO2008123459A1 (ja) 2008-10-16

Family

ID=39830944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056209 Ceased WO2008123459A1 (ja) 2007-03-30 2008-03-28 半導体ウエーハのエッジ検査装置及びエッジ検査方法

Country Status (5)

Country Link
US (1) US8194241B2 (ja)
JP (1) JP5344699B2 (ja)
KR (1) KR101099264B1 (ja)
DE (1) DE112008000723A5 (ja)
WO (1) WO2008123459A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171042A (ja) * 2012-02-17 2013-09-02 Kocos Automation Gmbh 薄いディスク状物体のエッジ形状の非接触決定装置
CN107228860A (zh) * 2017-06-28 2017-10-03 北京因时机器人科技有限公司 一种基于图像旋转周期特性的齿轮缺陷检测方法
JP2020107783A (ja) * 2018-12-28 2020-07-09 株式会社Sumco 半導体ウェーハの端面評価方法、半導体ウェーハ収容容器の評価方法、半導体ウェーハ梱包形態の評価方法および半導体ウェーハ輸送形態の評価方法
CN113405468A (zh) * 2021-06-28 2021-09-17 温州智华自动化设备有限公司 一种玻璃线轮廓检测机
DE102024112111A1 (de) * 2024-04-30 2025-10-30 Carl Zeiss Jena Gmbh Messvorrichtung zum Vermessen einer Oberfläche eines Gegenstands

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110317003A1 (en) * 2010-06-02 2011-12-29 Porat Roy Method and system for edge inspection using a tilted illumination
DE102010026351B4 (de) * 2010-07-07 2012-04-26 Siltronic Ag Verfahren und Vorrichtung zur Untersuchung einer Halbleiterscheibe
US8768040B2 (en) * 2011-01-14 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Substrate identification and tracking through surface reflectance
US9553034B1 (en) * 2012-03-27 2017-01-24 Kla-Tencor Corporation Combined semiconductor metrology system
JP5633537B2 (ja) * 2012-05-07 2014-12-03 信越半導体株式会社 半導体ウエーハの評価方法および半導体ウエーハの評価装置
KR101540569B1 (ko) * 2013-12-24 2015-07-31 주식회사 엘지실트론 웨이퍼의 형상 분석 방법 및 장치
CN108375335B (zh) * 2015-08-24 2020-06-02 江苏理工学院 一种大齿轮检测仪
US10302598B2 (en) 2016-10-24 2019-05-28 General Electric Company Corrosion and crack detection for fastener nuts
US10957566B2 (en) * 2018-04-12 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer-level inspection using on-valve inspection detectors
JP7067465B2 (ja) * 2018-12-27 2022-05-16 株式会社Sumco 半導体ウェーハの評価方法及び半導体ウェーハの製造方法
US12289836B2 (en) * 2019-09-02 2025-04-29 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing mounting substrate, and component mounting device
JP6788089B2 (ja) * 2019-10-23 2020-11-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
US20230306579A1 (en) * 2022-03-28 2023-09-28 Intel Corporation Registration metrology tool using darkfield and phase contrast imaging
US12352704B2 (en) * 2022-12-28 2025-07-08 Mitutoyo Corporation Metrology system for measuring edge of circular workpiece
CN119188586A (zh) * 2024-11-19 2024-12-27 西安奕斯伟材料科技股份有限公司 边缘研磨方法及装置、晶圆研磨设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001004341A (ja) * 1999-06-16 2001-01-12 Toshiba Ceramics Co Ltd ウェーハ形状測定装置
JP2003243465A (ja) * 2002-02-19 2003-08-29 Honda Electron Co Ltd ウエーハ用検査装置
WO2006059647A1 (ja) * 2004-11-30 2006-06-08 Shibaura Mechatronics Corporation 表面検査装置及び表面検査方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1001460B1 (en) 1998-10-15 2001-05-02 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Method and apparatus for detecting, monitoring and characterizing edge defects on semiconductor wafers
US7182349B2 (en) * 2003-07-17 2007-02-27 Mind Wurx, Llc Shopping cart with lowered center of gravity and frame therefor
US7280197B1 (en) * 2004-07-27 2007-10-09 Kla-Tehcor Technologies Corporation Wafer edge inspection apparatus
JP4500157B2 (ja) 2004-11-24 2010-07-14 株式会社神戸製鋼所 形状計測装置用光学系

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001004341A (ja) * 1999-06-16 2001-01-12 Toshiba Ceramics Co Ltd ウェーハ形状測定装置
JP2003243465A (ja) * 2002-02-19 2003-08-29 Honda Electron Co Ltd ウエーハ用検査装置
WO2006059647A1 (ja) * 2004-11-30 2006-06-08 Shibaura Mechatronics Corporation 表面検査装置及び表面検査方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013171042A (ja) * 2012-02-17 2013-09-02 Kocos Automation Gmbh 薄いディスク状物体のエッジ形状の非接触決定装置
CN107228860A (zh) * 2017-06-28 2017-10-03 北京因时机器人科技有限公司 一种基于图像旋转周期特性的齿轮缺陷检测方法
CN107228860B (zh) * 2017-06-28 2020-04-24 北京因时机器人科技有限公司 一种基于图像旋转周期特性的齿轮缺陷检测方法
JP2020107783A (ja) * 2018-12-28 2020-07-09 株式会社Sumco 半導体ウェーハの端面評価方法、半導体ウェーハ収容容器の評価方法、半導体ウェーハ梱包形態の評価方法および半導体ウェーハ輸送形態の評価方法
JP7003907B2 (ja) 2018-12-28 2022-01-21 株式会社Sumco 半導体ウェーハの端面評価方法、半導体ウェーハ収容容器の評価方法、半導体ウェーハ梱包形態の評価方法および半導体ウェーハ輸送形態の評価方法
CN113405468A (zh) * 2021-06-28 2021-09-17 温州智华自动化设备有限公司 一种玻璃线轮廓检测机
DE102024112111A1 (de) * 2024-04-30 2025-10-30 Carl Zeiss Jena Gmbh Messvorrichtung zum Vermessen einer Oberfläche eines Gegenstands

Also Published As

Publication number Publication date
US8194241B2 (en) 2012-06-05
JPWO2008123459A1 (ja) 2010-07-15
KR101099264B1 (ko) 2011-12-26
KR20090109574A (ko) 2009-10-20
DE112008000723T5 (de) 2010-01-21
DE112008000723A5 (de) 2012-06-14
US20100026997A1 (en) 2010-02-04
JP5344699B2 (ja) 2013-11-20

Similar Documents

Publication Publication Date Title
WO2008123459A1 (ja) 半導体ウエーハのエッジ検査装置及びエッジ検査方法
TW200716969A (en) Defect detecting method and defect detecting device
WO2008070722A3 (en) Methods and systems for identifying defect types on a wafer
TWI264793B (en) Defect detection apparatus and defect detection method
WO2009031612A1 (ja) 観察装置および観察方法、並びに検査装置および検査方法
EP4248853A3 (en) System and method for assessing perfusion in an anatomical structure
WO2007137261A3 (en) Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool
TW200736599A (en) Defect inspection device for inspecting defect by image analysis
EP1568985A3 (en) Apparatus for surface inspection and method and apparatus for inspecting substrate
WO2012091494A3 (ko) 기판 검사방법
WO2009017465A3 (en) Patterned wafer defect inspection system and method
TW200834059A (en) Defect inspection apparatus and method therefor
EP1973060A3 (en) Object image detection method and object image detection device
WO2008105460A1 (ja) 観察方法、検査装置および検査方法
WO2008077100A3 (en) Systems and methods for creating inspection recipes
TW200641340A (en) Method of testing surface of strained silicon wafer and apparatus for testing surface of strained silicon wafer
EP2160018A3 (en) Image pickup apparatus and image processing apparatus
WO2008139735A1 (ja) 表面検査装置および表面検査方法
EP4254330A3 (en) Flaw detection device and flaw detection method
CN102023168A (zh) 半导体晶圆表面的芯片检测方法及系统
TW200951423A (en) System and method for sorting polarization films
TW200942809A (en) Substrate surface inspection apparatus and method
TW200517644A (en) Defect inspection apparatus
WO2009054404A1 (ja) 撮影画像に基づいた検査方法及び検査装置
TW200733283A (en) An inspection system and a method for detecting defects based upon a reference frame

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08739327

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009509235

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020097018744

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 12531429

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1120080007233

Country of ref document: DE

RET De translation (de og part 6b)

Ref document number: 112008000723

Country of ref document: DE

Date of ref document: 20100121

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 08739327

Country of ref document: EP

Kind code of ref document: A1

REG Reference to national code

Ref country code: DE

Ref legal event code: 8607

REG Reference to national code

Ref country code: DE

Ref legal event code: R225

Ref document number: 112008000723

Country of ref document: DE

Effective date: 20120614