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WO2008123309A1 - ガス供給方法及びガス供給装置 - Google Patents

ガス供給方法及びガス供給装置 Download PDF

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Publication number
WO2008123309A1
WO2008123309A1 PCT/JP2008/055747 JP2008055747W WO2008123309A1 WO 2008123309 A1 WO2008123309 A1 WO 2008123309A1 JP 2008055747 W JP2008055747 W JP 2008055747W WO 2008123309 A1 WO2008123309 A1 WO 2008123309A1
Authority
WO
WIPO (PCT)
Prior art keywords
raw material
gas
gas supply
supply path
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055747
Other languages
English (en)
French (fr)
Inventor
Masamichi Hara
Atsushi Gomi
Osamu Yokoyama
Toshimasa Tanaka
Shinji Maekawa
Satoshi Taga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2008800099522A priority Critical patent/CN101646803B/zh
Priority to KR1020097020116A priority patent/KR101052156B1/ko
Publication of WO2008123309A1 publication Critical patent/WO2008123309A1/ja
Priority to US12/568,421 priority patent/US20100062158A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　本発明は、原料容器内の固体原料を加熱して気化させた原料ガスを消費区域に供給するガス供給方法において、消費区域に連通する処理ガス供給路にキャリアガスを通流させると共に、当該処理ガス供給路内のガス圧力を測定する工程（ａ）と、前記原料容器内の固体原料を加熱して、原料ガスを発生させる工程（ｂ）と、前記工程（ａ）と同じ流量のキャリアガスを前記原料容器内に供給して、このキャリアガスと共に前記原料ガスを前記処理ガス供給路に通流させながら当該処理ガス供給路内のガス圧力を測定する工程（ｃ）と、前記工程（ａ）で取得した圧力測定値と、前記工程（ｃ）で取得した圧力測定値と、キャリアガスの流量と、に基づいて、前記原料ガスの流量を演算する工程（ｄ）と、を備えたことを特徴とするガス供給方法である。
PCT/JP2008/055747 2007-03-28 2008-03-26 ガス供給方法及びガス供給装置 Ceased WO2008123309A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800099522A CN101646803B (zh) 2007-03-28 2008-03-26 气体供给方法和气体供给装置
KR1020097020116A KR101052156B1 (ko) 2007-03-28 2008-03-26 가스 공급 방법 및 가스 공급 장치
US12/568,421 US20100062158A1 (en) 2007-03-28 2009-09-28 Gas supply method and gas supply device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-085652 2007-03-28
JP2007085652A JP5103983B2 (ja) 2007-03-28 2007-03-28 ガス供給方法、ガス供給装置、半導体製造装置及び記憶媒体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/568,421 Continuation US20100062158A1 (en) 2007-03-28 2009-09-28 Gas supply method and gas supply device

Publications (1)

Publication Number Publication Date
WO2008123309A1 true WO2008123309A1 (ja) 2008-10-16

Family

ID=39830797

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055747 Ceased WO2008123309A1 (ja) 2007-03-28 2008-03-26 ガス供給方法及びガス供給装置

Country Status (5)

Country Link
US (1) US20100062158A1 (ja)
JP (1) JP5103983B2 (ja)
KR (1) KR101052156B1 (ja)
CN (1) CN101646803B (ja)
WO (1) WO2008123309A1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4845782B2 (ja) * 2007-03-16 2011-12-28 東京エレクトロン株式会社 成膜原料
JP2010144221A (ja) * 2008-12-18 2010-07-01 Tokyo Electron Ltd 原料ガス発生装置及び成膜装置
US20130284090A1 (en) * 2012-04-26 2013-10-31 Ganesh Balasubramanian Compensating concentration uncertainity
JP6142629B2 (ja) * 2013-03-29 2017-06-07 東京エレクトロン株式会社 原料ガス供給装置、成膜装置及び原料ガス供給方法
CN104150431A (zh) * 2013-05-14 2014-11-19 北京北方微电子基地设备工艺研究中心有限责任公司 进气系统及基片处理设备
JP2015190035A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 ガス供給機構およびガス供給方法、ならびにそれを用いた成膜装置および成膜方法
JP2016040402A (ja) * 2014-08-12 2016-03-24 東京エレクトロン株式会社 原料ガス供給装置
JP6370198B2 (ja) * 2014-11-07 2018-08-08 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
KR101899201B1 (ko) * 2015-03-27 2018-09-14 도쿄엘렉트론가부시키가이샤 원료 공급 장치, 원료 공급 방법 및 기억 매체
JP6693106B2 (ja) * 2015-03-27 2020-05-13 東京エレクトロン株式会社 原料供給装置、原料供給方法及び記憶媒体
JP2016186111A (ja) 2015-03-27 2016-10-27 東京エレクトロン株式会社 原料供給方法、原料供給装置及び記憶媒体
CN107026066B (zh) * 2015-06-23 2018-10-23 上海凯世通半导体股份有限公司 供料装置、离子源装置及供料方法
JP6627474B2 (ja) * 2015-09-30 2020-01-08 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
JP6565645B2 (ja) * 2015-12-02 2019-08-28 東京エレクトロン株式会社 原料ガス供給装置、原料ガス供給方法及び記憶媒体
US11255017B2 (en) 2017-03-16 2022-02-22 Lam Research Corporation Systems and methods for flow monitoring in a precursor vapor supply system of a substrate processing system
CN107779846A (zh) * 2017-10-27 2018-03-09 君泰创新（北京）科技有限公司 一种pecvd设备的工艺气体流量的调整方法和系统
US11009455B2 (en) 2018-07-31 2021-05-18 Applied Materials, Inc. Precursor delivery system and methods related thereto
WO2020082282A1 (en) * 2018-10-25 2020-04-30 China Triumph International Engineering Co., Ltd. Vapor deposition apparatus and use thereof
JP7413120B2 (ja) * 2020-03-27 2024-01-15 東京エレクトロン株式会社 ガス供給量算出方法、及び、半導体装置の製造方法
CN117646198B (zh) * 2024-01-30 2024-04-23 浙江大学 一种原子级精度的cvd设备压力自动控制方法及系统
CN120158727A (zh) * 2025-03-11 2025-06-17 江苏迈纳德微纳技术有限公司 一种针对低饱和蒸气压前驱体源的原子层沉积供气系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH034929A (ja) * 1989-05-31 1991-01-10 Stec Kk 気化方式によるガス発生装置
JPH0347526A (ja) * 1989-07-14 1991-02-28 Fujikura Ltd 原料供給装置
JP2004091917A (ja) * 2002-07-10 2004-03-25 Tokyo Electron Ltd 成膜装置及びこれに使用する原料供給装置、ガス濃度測定方法
JP2006241516A (ja) * 2005-03-03 2006-09-14 National Institute Of Advanced Industrial & Technology 混合ガスによる薄膜作製方法とその装置

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JP4365785B2 (ja) * 2002-07-10 2009-11-18 東京エレクトロン株式会社 成膜装置
US7003417B2 (en) * 2003-06-06 2006-02-21 Invensys Systems, Inc. Multiple calibration ranges stored in a process transmitter
US8435351B2 (en) * 2004-11-29 2013-05-07 Tokyo Electron Limited Method and system for measuring a flow rate in a solid precursor delivery system

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH034929A (ja) * 1989-05-31 1991-01-10 Stec Kk 気化方式によるガス発生装置
JPH0347526A (ja) * 1989-07-14 1991-02-28 Fujikura Ltd 原料供給装置
JP2004091917A (ja) * 2002-07-10 2004-03-25 Tokyo Electron Ltd 成膜装置及びこれに使用する原料供給装置、ガス濃度測定方法
JP2006241516A (ja) * 2005-03-03 2006-09-14 National Institute Of Advanced Industrial & Technology 混合ガスによる薄膜作製方法とその装置

Also Published As

Publication number Publication date
CN101646803B (zh) 2011-11-30
JP2008240119A (ja) 2008-10-09
KR20090129444A (ko) 2009-12-16
JP5103983B2 (ja) 2012-12-19
CN101646803A (zh) 2010-02-10
KR101052156B1 (ko) 2011-07-26
US20100062158A1 (en) 2010-03-11

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