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WO2008114753A1 - 基板載置台,基板処理装置,基板載置台の表面加工方法 - Google Patents

基板載置台,基板処理装置,基板載置台の表面加工方法 Download PDF

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Publication number
WO2008114753A1
WO2008114753A1 PCT/JP2008/054814 JP2008054814W WO2008114753A1 WO 2008114753 A1 WO2008114753 A1 WO 2008114753A1 JP 2008054814 W JP2008054814 W JP 2008054814W WO 2008114753 A1 WO2008114753 A1 WO 2008114753A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
placing table
substrate placing
region
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054814
Other languages
English (en)
French (fr)
Inventor
Kazuichi Hayashi
Hidenori Miyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009505207A priority Critical patent/JPWO2008114753A1/ja
Priority to US12/532,480 priority patent/US20100108108A1/en
Publication of WO2008114753A1 publication Critical patent/WO2008114753A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

基板載置台を提供する。本発明にかかる載置台(120)は,上部表面と側部表面が上側カバー部材(124)で覆われた載置台本体(122)を備え,上側カバー部材(124)の上部表面のうち,ウエハ(W)が載置されたときにウエハ(W)に隠れる基板載置領域(220)よりも,その外側の基板周囲領域(222)の方が平滑になるように,基板周囲領域(222)に部分的な表面加工を施した。これによれば,例えば基板上の金属酸化膜を除去する処理を行う際に発生する金属成分が,載置台に付着し難く,また付着したとしても簡単に取り除くことができる。
PCT/JP2008/054814 2007-03-22 2008-03-14 基板載置台,基板処理装置,基板載置台の表面加工方法 Ceased WO2008114753A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009505207A JPWO2008114753A1 (ja) 2007-03-22 2008-03-14 基板載置台,基板処理装置,基板載置台の表面加工方法
US12/532,480 US20100108108A1 (en) 2007-03-22 2008-03-14 Substrate mounting table, substrate processing apparatus and method for treating surface of substrate mounting table

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007073992 2007-03-22
JP2007-073992 2007-03-22

Publications (1)

Publication Number Publication Date
WO2008114753A1 true WO2008114753A1 (ja) 2008-09-25

Family

ID=39765862

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054814 Ceased WO2008114753A1 (ja) 2007-03-22 2008-03-14 基板載置台,基板処理装置,基板載置台の表面加工方法

Country Status (4)

Country Link
US (1) US20100108108A1 (ja)
JP (1) JPWO2008114753A1 (ja)
TW (1) TW200903702A (ja)
WO (1) WO2008114753A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197255A (ja) * 2012-03-19 2013-09-30 Fujitsu Ltd 半導体装置の製造方法及び半導体装置の製造装置
JP2016525287A (ja) * 2013-07-19 2016-08-22 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated プロセスリング上の希土類酸化物系薄膜コーティング用イオンアシスト蒸着
KR20190128997A (ko) * 2018-05-09 2019-11-19 에이에스엠 아이피 홀딩 비.브이. 수소 래디칼과 함께 사용하기 위한 장치 및 이를 사용하는 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5966250B2 (ja) * 2011-03-16 2016-08-10 富士電機株式会社 基板支持治具
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
JP6444641B2 (ja) * 2014-07-24 2018-12-26 株式会社ニューフレアテクノロジー 成膜装置、サセプタ、及び成膜方法
KR101692251B1 (ko) * 2014-08-06 2017-01-03 (주)얼라이드 테크 파인더즈 플라즈마 장치
DE112015007036B4 (de) * 2015-10-19 2023-09-28 Toshiba Mitsubishi-Electric Industrial Systems Corporation Filmbildungsvorrichtung
EP4006959B1 (en) * 2019-07-26 2023-11-01 Origin Company, Limited Solder-attached product manufacturing device, and solder-attached product manufacturing method
CN114351120A (zh) * 2021-12-27 2022-04-15 拓荆科技股份有限公司 晶圆支撑装置及沉积薄膜厚度控制的方法
US20230415204A1 (en) * 2022-06-23 2023-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Wet cleaning tool and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163256A (ja) * 2001-11-26 2003-06-06 Kyocera Corp 真空対応型ステージ装置
JP2006351949A (ja) * 2005-06-17 2006-12-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板載置台の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW570856B (en) * 2001-01-18 2004-01-11 Fujitsu Ltd Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system
JP3626933B2 (ja) * 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
US7718930B2 (en) * 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163256A (ja) * 2001-11-26 2003-06-06 Kyocera Corp 真空対応型ステージ装置
JP2006351949A (ja) * 2005-06-17 2006-12-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板載置台の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013197255A (ja) * 2012-03-19 2013-09-30 Fujitsu Ltd 半導体装置の製造方法及び半導体装置の製造装置
JP2016525287A (ja) * 2013-07-19 2016-08-22 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated プロセスリング上の希土類酸化物系薄膜コーティング用イオンアシスト蒸着
KR20190128997A (ko) * 2018-05-09 2019-11-19 에이에스엠 아이피 홀딩 비.브이. 수소 래디칼과 함께 사용하기 위한 장치 및 이를 사용하는 방법
JP2019205995A (ja) * 2018-05-09 2019-12-05 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 水素ラジカルを使用するための装置およびその使用方法
JP7440215B2 (ja) 2018-05-09 2024-02-28 エーエスエム・アイピー・ホールディング・ベー・フェー 水素ラジカルを使用するための装置およびその使用方法
KR102760294B1 (ko) * 2018-05-09 2025-01-24 에이에스엠 아이피 홀딩 비.브이. 수소 래디칼과 함께 사용하기 위한 장치 및 이를 사용하는 방법

Also Published As

Publication number Publication date
TW200903702A (en) 2009-01-16
US20100108108A1 (en) 2010-05-06
JPWO2008114753A1 (ja) 2010-07-08

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