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WO2008111518A1 - 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法 - Google Patents

窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法 Download PDF

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Publication number
WO2008111518A1
WO2008111518A1 PCT/JP2008/054179 JP2008054179W WO2008111518A1 WO 2008111518 A1 WO2008111518 A1 WO 2008111518A1 JP 2008054179 W JP2008054179 W JP 2008054179W WO 2008111518 A1 WO2008111518 A1 WO 2008111518A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
forming
laminated structure
layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054179
Other languages
English (en)
French (fr)
Inventor
Hirotaka Otake
Hiroaki Ohta
Shin Egami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/531,059 priority Critical patent/US8035131B2/en
Publication of WO2008111518A1 publication Critical patent/WO2008111518A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

　本発明の窒化物半導体積層構造の形成方法は、III族窒化物半導体からなる、ｎ型またはｉ型の第１層を形成する第１層形成工程と、前記第１層上に、III族窒化物半導体からなり、Ｍｇを含むｐ型の第２層を積層する第２層形成工程と、前記第２層形成工程後、前記第２層上に、III族窒化物半導体からなる、ｎ型またはｉ型の第３層を形成する第３層形成工程とを含む。
PCT/JP2008/054179 2007-03-12 2008-03-07 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法 Ceased WO2008111518A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/531,059 US8035131B2 (en) 2007-03-12 2008-03-07 Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-061923 2007-03-12
JP2007061923A JP2008227073A (ja) 2007-03-12 2007-03-12 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法

Publications (1)

Publication Number Publication Date
WO2008111518A1 true WO2008111518A1 (ja) 2008-09-18

Family

ID=39759456

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054179 Ceased WO2008111518A1 (ja) 2007-03-12 2008-03-07 窒化物半導体積層構造の形成方法および窒化物半導体素子の製造方法

Country Status (3)

Country Link
US (1) US8035131B2 (ja)
JP (1) JP2008227073A (ja)
WO (1) WO2008111518A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014209540A (ja) * 2013-03-26 2014-11-06 豊田合成株式会社 半導体装置およびその製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法
JP2009044035A (ja) * 2007-08-10 2009-02-26 Sanken Electric Co Ltd 電界効果半導体装置
JP2012169470A (ja) * 2011-02-15 2012-09-06 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP6054620B2 (ja) 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
TWI496285B (zh) * 2012-12-07 2015-08-11 Richtek Technology Corp 高電子遷移率電晶體及其製造方法
CN103872119B (zh) * 2012-12-17 2016-08-24 立锜科技股份有限公司 高电子迁移率晶体管及其制造方法
EP3707756B1 (en) 2017-11-07 2022-08-24 Gallium Enterprises Pty Ltd Buried activated p-(al,in)gan layers
US10756207B2 (en) * 2018-10-12 2020-08-25 Transphorm Technology, Inc. Lateral III-nitride devices including a vertical gate module
WO2023233760A1 (ja) * 2022-05-31 2023-12-07 キヤノン株式会社 発光装置、表示装置、光電変換装置、電子機器、および、発光装置の製造方法
CN115101595A (zh) * 2022-07-11 2022-09-23 中芯越州集成电路制造(绍兴)有限公司 高电子迁移率晶体管及其制备方法、半导体器件

Citations (7)

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Publication number Priority date Publication date Assignee Title
JPH10144962A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 半導体発光素子およびその製造方法
JPH10209051A (ja) * 1997-01-24 1998-08-07 Matsushita Electron Corp 窒化物系化合物半導体の製造方法
JP2001230410A (ja) * 2000-02-18 2001-08-24 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタとその製造方法
JP2003163354A (ja) * 2001-11-27 2003-06-06 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2005277358A (ja) * 2004-03-26 2005-10-06 Ngk Insulators Ltd 半導体積層構造、トランジスタ素子、およびトランジスタ素子の製造方法
JP2006286954A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法
JP2006286910A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法

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NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JP3728332B2 (ja) * 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US6897495B2 (en) * 2001-10-31 2005-05-24 The Furukawa Electric Co., Ltd Field effect transistor and manufacturing method therefor
JP2008205414A (ja) * 2007-01-26 2008-09-04 Rohm Co Ltd 窒化物半導体素子、窒化物半導体パッケージおよび窒化物半導体素子の製造方法
JP2009032796A (ja) * 2007-07-25 2009-02-12 Rohm Co Ltd 窒化物半導体素子および窒化物半導体素子の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144962A (ja) * 1996-09-10 1998-05-29 Toshiba Corp 半導体発光素子およびその製造方法
JPH10209051A (ja) * 1997-01-24 1998-08-07 Matsushita Electron Corp 窒化物系化合物半導体の製造方法
JP2001230410A (ja) * 2000-02-18 2001-08-24 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタとその製造方法
JP2003163354A (ja) * 2001-11-27 2003-06-06 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP2005277358A (ja) * 2004-03-26 2005-10-06 Ngk Insulators Ltd 半導体積層構造、トランジスタ素子、およびトランジスタ素子の製造方法
JP2006286954A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法
JP2006286910A (ja) * 2005-03-31 2006-10-19 Eudyna Devices Inc 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014209540A (ja) * 2013-03-26 2014-11-06 豊田合成株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20100047976A1 (en) 2010-02-25
JP2008227073A (ja) 2008-09-25
US8035131B2 (en) 2011-10-11

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