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WO2008111205A1 - Process for producing semiconductor device, wafer and wafer cleaning apparatus - Google Patents

Process for producing semiconductor device, wafer and wafer cleaning apparatus Download PDF

Info

Publication number
WO2008111205A1
WO2008111205A1 PCT/JP2007/055194 JP2007055194W WO2008111205A1 WO 2008111205 A1 WO2008111205 A1 WO 2008111205A1 JP 2007055194 W JP2007055194 W JP 2007055194W WO 2008111205 A1 WO2008111205 A1 WO 2008111205A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
cleaning
semiconductor device
cutting out
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/055194
Other languages
French (fr)
Japanese (ja)
Inventor
Masayuki Kikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to PCT/JP2007/055194 priority Critical patent/WO2008111205A1/en
Publication of WO2008111205A1 publication Critical patent/WO2008111205A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

[PROBLEMS] To provide a process for producing a semiconductor device, in which the occurrence of defective goods by static buildup at the cleaning of wafer surface can be suppressed; a relevant method of wafer cleaning and cleaning apparatus; and a wafer suitable therefor. [MEANS FOR SOLVING PROBLEMS] The process for producing a semiconductor device comprises the pattern forming step of forming circuit patterns on a wafer in its partitioned areas; the cleaning step of cleaning the wafer surface by applying a jet of cleaning liquid thereto while rotating the wafer provided with the circuit patterns; the cutting out step of cutting out waferpieces by partitions; and the separation step of, defining as a static buildup countermeasure zone a zone containing a region within a given radius from the center of rotation where charges occurring on the wafer at the cleaning step are likely to accumulate, cutting out the static buildup countermeasure zone and removing the same from semiconductor chips as a product.
PCT/JP2007/055194 2007-03-15 2007-03-15 Process for producing semiconductor device, wafer and wafer cleaning apparatus Ceased WO2008111205A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055194 WO2008111205A1 (en) 2007-03-15 2007-03-15 Process for producing semiconductor device, wafer and wafer cleaning apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055194 WO2008111205A1 (en) 2007-03-15 2007-03-15 Process for producing semiconductor device, wafer and wafer cleaning apparatus

Publications (1)

Publication Number Publication Date
WO2008111205A1 true WO2008111205A1 (en) 2008-09-18

Family

ID=39759156

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055194 Ceased WO2008111205A1 (en) 2007-03-15 2007-03-15 Process for producing semiconductor device, wafer and wafer cleaning apparatus

Country Status (1)

Country Link
WO (1) WO2008111205A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011135979A1 (en) * 2010-04-28 2013-07-18 コニカミノルタ株式会社 Method for manufacturing imaging lens
CN115036207A (en) * 2022-06-28 2022-09-09 上海华力集成电路制造有限公司 Method for improving wafer point discharge defect

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114425A (en) * 1990-09-04 1992-04-15 Fujitsu Ltd Manufacture of semiconductor device
JPH08330594A (en) * 1995-05-31 1996-12-13 Sony Corp Insulating substrate manufacturing method and semiconductor device manufacturing method
JPH10308374A (en) * 1997-03-06 1998-11-17 Ebara Corp Method and equipment for cleaning
JP2002100750A (en) * 2000-09-25 2002-04-05 Mitsubishi Materials Silicon Corp Soi substrate and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114425A (en) * 1990-09-04 1992-04-15 Fujitsu Ltd Manufacture of semiconductor device
JPH08330594A (en) * 1995-05-31 1996-12-13 Sony Corp Insulating substrate manufacturing method and semiconductor device manufacturing method
JPH10308374A (en) * 1997-03-06 1998-11-17 Ebara Corp Method and equipment for cleaning
JP2002100750A (en) * 2000-09-25 2002-04-05 Mitsubishi Materials Silicon Corp Soi substrate and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011135979A1 (en) * 2010-04-28 2013-07-18 コニカミノルタ株式会社 Method for manufacturing imaging lens
CN115036207A (en) * 2022-06-28 2022-09-09 上海华力集成电路制造有限公司 Method for improving wafer point discharge defect

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