[go: up one dir, main page]

WO2008108264A1 - 半導体装置およびその製造方法ならびに磁気メモリ素子 - Google Patents

半導体装置およびその製造方法ならびに磁気メモリ素子 Download PDF

Info

Publication number
WO2008108264A1
WO2008108264A1 PCT/JP2008/053496 JP2008053496W WO2008108264A1 WO 2008108264 A1 WO2008108264 A1 WO 2008108264A1 JP 2008053496 W JP2008053496 W JP 2008053496W WO 2008108264 A1 WO2008108264 A1 WO 2008108264A1
Authority
WO
WIPO (PCT)
Prior art keywords
tmr
mram
magnetic memory
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053496
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Koga
Shuichi Ueno
Hideto Hidaka
Tomoya Kawagoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Grandis Inc
Original Assignee
Renesas Technology Corp
Grandis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Grandis Inc filed Critical Renesas Technology Corp
Publication of WO2008108264A1 publication Critical patent/WO2008108264A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)

Abstract

　半導体装置は、フリー層ＭＦを含む磁気トンネル接合ＴＭＲを有し、ＴＭＲの近傍に流れる電流が発生する磁場によって、フリー層ＭＦの磁化方向が制御される標準ＭＲＡＭと、フリー層ＭＦを含むＴＭＲを有し、ＴＭＲに供給されるスピン注入電流により、フリー層ＭＦの磁化方向が制御されるＳＴＴ－ＭＲＡＭとを備え、標準ＭＲＡＭおよびＳＴＴ－ＭＲＡＭが同一基板上に搭載される。 　こうした構成により、種類の異なる磁気メモリ素子の個々の特性を有効に活用でき、素子特性が多様な磁気メモリ素子を実現できる。
PCT/JP2008/053496 2007-03-02 2008-02-28 半導体装置およびその製造方法ならびに磁気メモリ素子 Ceased WO2008108264A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-052952 2007-03-02
JP2007052952A JP2008218649A (ja) 2007-03-02 2007-03-02 半導体装置およびその製造方法ならびに磁気メモリ素子

Publications (1)

Publication Number Publication Date
WO2008108264A1 true WO2008108264A1 (ja) 2008-09-12

Family

ID=39738147

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053496 Ceased WO2008108264A1 (ja) 2007-03-02 2008-02-28 半導体装置およびその製造方法ならびに磁気メモリ素子

Country Status (3)

Country Link
JP (1) JP2008218649A (ja)
TW (1) TW200845442A (ja)
WO (1) WO2008108264A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010039458A1 (en) * 2008-09-23 2010-04-08 Qualcomm Incorporated Low power electronic system using non-volatile magnetic memory
CN102623483A (zh) * 2011-01-27 2012-08-01 瑞萨电子株式会社 半导体器件
JP2014112691A (ja) * 2013-12-26 2014-06-19 Renesas Electronics Corp 半導体装置の製造方法
TWI451411B (zh) * 2008-09-30 2014-09-01 Micron Technology Inc 用於自旋力矩轉移磁性隨機存取記憶體或其他自旋電子應用之自旋電流產生器
US10446211B2 (en) 2017-09-20 2019-10-15 Toshiba Memory Corporation Semiconductor storage device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5488833B2 (ja) * 2008-03-07 2014-05-14 日本電気株式会社 Ｍｒａｍ混載システム
US12207477B2 (en) * 2021-03-18 2025-01-21 International Business Machines Corporation Same level MRAM stacks having different configurations

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004023062A (ja) * 2002-06-20 2004-01-22 Nec Electronics Corp 半導体装置とその製造方法
JP2005101123A (ja) * 2003-09-24 2005-04-14 Sony Corp 磁気記憶装置、磁気記憶装置の書き込み方法および磁気記憶装置の製造方法
JP2005277147A (ja) * 2004-03-25 2005-10-06 Tohoku Univ 磁気記録素子の記録方法及び磁気記録素子アレイ
JP2006080287A (ja) * 2004-09-09 2006-03-23 Toshiba Corp 磁気ランダムアクセスメモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004023062A (ja) * 2002-06-20 2004-01-22 Nec Electronics Corp 半導体装置とその製造方法
JP2005101123A (ja) * 2003-09-24 2005-04-14 Sony Corp 磁気記憶装置、磁気記憶装置の書き込み方法および磁気記憶装置の製造方法
JP2005277147A (ja) * 2004-03-25 2005-10-06 Tohoku Univ 磁気記録素子の記録方法及び磁気記録素子アレイ
JP2006080287A (ja) * 2004-09-09 2006-03-23 Toshiba Corp 磁気ランダムアクセスメモリ

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010039458A1 (en) * 2008-09-23 2010-04-08 Qualcomm Incorporated Low power electronic system using non-volatile magnetic memory
US8719610B2 (en) 2008-09-23 2014-05-06 Qualcomm Incorporated Low power electronic system architecture using non-volatile magnetic memory
TWI451411B (zh) * 2008-09-30 2014-09-01 Micron Technology Inc 用於自旋力矩轉移磁性隨機存取記憶體或其他自旋電子應用之自旋電流產生器
US8885398B2 (en) 2008-09-30 2014-11-11 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
CN102623483A (zh) * 2011-01-27 2012-08-01 瑞萨电子株式会社 半导体器件
CN102623483B (zh) * 2011-01-27 2016-06-01 瑞萨电子株式会社 半导体器件
JP2014112691A (ja) * 2013-12-26 2014-06-19 Renesas Electronics Corp 半導体装置の製造方法
US10446211B2 (en) 2017-09-20 2019-10-15 Toshiba Memory Corporation Semiconductor storage device

Also Published As

Publication number Publication date
JP2008218649A (ja) 2008-09-18
TW200845442A (en) 2008-11-16

Similar Documents

Publication Publication Date Title
WO2010120918A3 (en) Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same
WO2008108264A1 (ja) 半導体装置およびその製造方法ならびに磁気メモリ素子
CN101925960B (zh) 具有单独读取和写入路径的磁性隧道结装置
JP6628993B2 (ja) 磁気接合及びそれを含む磁気装置並びに磁気接合提供方法
US9608039B1 (en) Magnetic junctions programmable using spin-orbit interaction torque in the absence of an external magnetic field
US8686520B2 (en) Spin-torque magnetoresistive structures
WO2007117392A3 (en) On-plug magnetic tunnel junction devices based on spin torque transfer switching
EP2823512B1 (en) Magnetic logic units configured to measure magnetic field direction
JP5260040B2 (ja) 単一方向電流磁化反転磁気抵抗効果素子と磁気記録装置
KR101844028B1 (ko) 이축 이방성을 가지는 자기 터널 접합 소자들
WO2009031231A1 (ja) 半導体装置
ATE543104T1 (de) Auf magnettunnelübergang (mtj) basierender magnetfeldwinkelsensor
WO2007075889A3 (en) Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
US9324939B2 (en) Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)
WO2005029497A3 (en) Current confined pass layer for magnetic elements utilizing spin-transfer and an mram device using such magnetic elements
US20080310214A1 (en) Device and method of programming a magnetic memory element
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
WO2015102739A3 (en) Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
WO2010101860A3 (en) Reducing source loading effect in spin torque transfer magnetoresitive random access memory (stt-mram)
US20160313412A1 (en) Anisotropic Magnetoresistance Sensor
JP2012134495A5 (ja)
US9583695B2 (en) Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal
US20090121266A1 (en) Methods and structures for exchange-coupled magnetic multi-layer structure with improved operating temperature behavior
US8823360B2 (en) Semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08720991

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08720991

Country of ref document: EP

Kind code of ref document: A1