TW200845442A - Semiconductor apparatus and method for manufacturing the same and magnetic memory device - Google Patents
Semiconductor apparatus and method for manufacturing the same and magnetic memory device Download PDFInfo
- Publication number
- TW200845442A TW200845442A TW097107012A TW97107012A TW200845442A TW 200845442 A TW200845442 A TW 200845442A TW 097107012 A TW097107012 A TW 097107012A TW 97107012 A TW97107012 A TW 97107012A TW 200845442 A TW200845442 A TW 200845442A
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- layer
- memory element
- magnetic memory
- semiconductor device
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 194
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 252
- 230000005415 magnetization Effects 0.000 claims description 44
- 239000011229 interlayer Substances 0.000 claims description 40
- 238000009413 insulation Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 230000006870 function Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 230000005641 tunneling Effects 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 claims 2
- 238000004898 kneading Methods 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 229910003321 CoFe Inorganic materials 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 241000723377 Coffea Species 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 235000016213 coffee Nutrition 0.000 description 4
- 235000013353 coffee beverage Nutrition 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 210000004185 liver Anatomy 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 206010011469 Crying Diseases 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 235000010726 Vigna sinensis Nutrition 0.000 description 1
- 244000042314 Vigna unguiculata Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007052952A JP2008218649A (ja) | 2007-03-02 | 2007-03-02 | 半導体装置およびその製造方法ならびに磁気メモリ素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200845442A true TW200845442A (en) | 2008-11-16 |
Family
ID=39738147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097107012A TW200845442A (en) | 2007-03-02 | 2008-02-29 | Semiconductor apparatus and method for manufacturing the same and magnetic memory device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008218649A (ja) |
| TW (1) | TW200845442A (ja) |
| WO (1) | WO2008108264A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5488833B2 (ja) * | 2008-03-07 | 2014-05-14 | 日本電気株式会社 | Ｍｒａｍ混載システム |
| US8719610B2 (en) | 2008-09-23 | 2014-05-06 | Qualcomm Incorporated | Low power electronic system architecture using non-volatile magnetic memory |
| US7876603B2 (en) * | 2008-09-30 | 2011-01-25 | Micron Technology, Inc. | Spin current generator for STT-MRAM or other spintronics applications |
| JP5703041B2 (ja) | 2011-01-27 | 2015-04-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2014112691A (ja) * | 2013-12-26 | 2014-06-19 | Renesas Electronics Corp | 半導体装置の製造方法 |
| JP6829172B2 (ja) | 2017-09-20 | 2021-02-10 | キオクシア株式会社 | 半導体記憶装置 |
| US12207477B2 (en) * | 2021-03-18 | 2025-01-21 | International Business Machines Corporation | Same level MRAM stacks having different configurations |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004023062A (ja) * | 2002-06-20 | 2004-01-22 | Nec Electronics Corp | 半導体装置とその製造方法 |
| JP4341355B2 (ja) * | 2003-09-24 | 2009-10-07 | ソニー株式会社 | 磁気記憶装置、磁気記憶装置の書き込み方法および磁気記憶装置の製造方法 |
| JP2005277147A (ja) * | 2004-03-25 | 2005-10-06 | Tohoku Univ | 磁気記録素子の記録方法及び磁気記録素子アレイ |
| JP4095597B2 (ja) * | 2004-09-09 | 2008-06-04 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
-
2007
- 2007-03-02 JP JP2007052952A patent/JP2008218649A/ja active Pending
-
2008
- 2008-02-28 WO PCT/JP2008/053496 patent/WO2008108264A1/ja not_active Ceased
- 2008-02-29 TW TW097107012A patent/TW200845442A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008108264A1 (ja) | 2008-09-12 |
| JP2008218649A (ja) | 2008-09-18 |
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