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WO2008105076A1 - Rfidタグlsiおよびrfidタグ制御方法 - Google Patents

Rfidタグlsiおよびrfidタグ制御方法 Download PDF

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Publication number
WO2008105076A1
WO2008105076A1 PCT/JP2007/053675 JP2007053675W WO2008105076A1 WO 2008105076 A1 WO2008105076 A1 WO 2008105076A1 JP 2007053675 W JP2007053675 W JP 2007053675W WO 2008105076 A1 WO2008105076 A1 WO 2008105076A1
Authority
WO
WIPO (PCT)
Prior art keywords
rfid tag
lsi
recall
control method
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/053675
Other languages
English (en)
French (fr)
Inventor
Shoichi Masui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009501079A priority Critical patent/JPWO2008105076A1/ja
Priority to PCT/JP2007/053675 priority patent/WO2008105076A1/ja
Publication of WO2008105076A1 publication Critical patent/WO2008105076A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0072Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Near-Field Transmission Systems (AREA)

Abstract

 RFIDタグLSI(100)は、6つのトランジスタおよび4つの強誘電体キャパシタから構成される6T4C型のFeRAM(110)の強誘電体キャパシタに蓄積された分極情報を揮発性蓄積ノードへ出力するリコール動作を実行するリコール制御回路(111)と、を備えている。また、リコール制御回路(111)は、リーダ・ライタ機器(120)から送信された無線信号に応じてRFIDタグLSI(100)が起電した後、所定のコマンドを含んだ無線信号を受信するまでの間にリコール動作を実行する。
PCT/JP2007/053675 2007-02-27 2007-02-27 Rfidタグlsiおよびrfidタグ制御方法 Ceased WO2008105076A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009501079A JPWO2008105076A1 (ja) 2007-02-27 2007-02-27 Rfidタグlsiおよびrfidタグ制御方法
PCT/JP2007/053675 WO2008105076A1 (ja) 2007-02-27 2007-02-27 Rfidタグlsiおよびrfidタグ制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053675 WO2008105076A1 (ja) 2007-02-27 2007-02-27 Rfidタグlsiおよびrfidタグ制御方法

Publications (1)

Publication Number Publication Date
WO2008105076A1 true WO2008105076A1 (ja) 2008-09-04

Family

ID=39720922

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053675 Ceased WO2008105076A1 (ja) 2007-02-27 2007-02-27 Rfidタグlsiおよびrfidタグ制御方法

Country Status (2)

Country Link
JP (1) JPWO2008105076A1 (ja)
WO (1) WO2008105076A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019079589A (ja) * 2019-01-29 2019-05-23 ローム株式会社 半導体記憶装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07182872A (ja) * 1993-12-22 1995-07-21 Hitachi Ltd 半導体メモリ
JPH09245486A (ja) * 1996-03-04 1997-09-19 Hitachi Ltd 強誘電体メモリ
JPH09511886A (ja) * 1994-10-26 1997-11-25 シーメンス アクチエンゲゼルシヤフト エネルギーおよびデータの無接触伝送システム
JP2003162700A (ja) * 2001-11-27 2003-06-06 Sharp Corp 半導体装置の動作制御方法、半導体装置動作制御プログラム、半導体装置動作制御プログラムを記録した記録媒体、半導体装置、およびicカード
JP2003203213A (ja) * 2002-01-08 2003-07-18 Dainippon Printing Co Ltd 認証管理アプリケーション、認証アプリケーション及びicカード
JP2003296681A (ja) * 2002-03-29 2003-10-17 Fujitsu Ltd 半導体集積回路、無線タグ、および非接触型icカード
JP2005092922A (ja) * 2003-09-12 2005-04-07 Fujitsu Ltd 強誘電体メモリ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07182872A (ja) * 1993-12-22 1995-07-21 Hitachi Ltd 半導体メモリ
JPH09511886A (ja) * 1994-10-26 1997-11-25 シーメンス アクチエンゲゼルシヤフト エネルギーおよびデータの無接触伝送システム
JPH09245486A (ja) * 1996-03-04 1997-09-19 Hitachi Ltd 強誘電体メモリ
JP2003162700A (ja) * 2001-11-27 2003-06-06 Sharp Corp 半導体装置の動作制御方法、半導体装置動作制御プログラム、半導体装置動作制御プログラムを記録した記録媒体、半導体装置、およびicカード
JP2003203213A (ja) * 2002-01-08 2003-07-18 Dainippon Printing Co Ltd 認証管理アプリケーション、認証アプリケーション及びicカード
JP2003296681A (ja) * 2002-03-29 2003-10-17 Fujitsu Ltd 半導体集積回路、無線タグ、および非接触型icカード
JP2005092922A (ja) * 2003-09-12 2005-04-07 Fujitsu Ltd 強誘電体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019079589A (ja) * 2019-01-29 2019-05-23 ローム株式会社 半導体記憶装置

Also Published As

Publication number Publication date
JPWO2008105076A1 (ja) 2010-06-03

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