WO2008105076A1 - Rfidタグlsiおよびrfidタグ制御方法 - Google Patents
Rfidタグlsiおよびrfidタグ制御方法 Download PDFInfo
- Publication number
- WO2008105076A1 WO2008105076A1 PCT/JP2007/053675 JP2007053675W WO2008105076A1 WO 2008105076 A1 WO2008105076 A1 WO 2008105076A1 JP 2007053675 W JP2007053675 W JP 2007053675W WO 2008105076 A1 WO2008105076 A1 WO 2008105076A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- rfid tag
- lsi
- recall
- control method
- control circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Near-Field Transmission Systems (AREA)
Abstract
RFIDタグLSI(100)は、6つのトランジスタおよび4つの強誘電体キャパシタから構成される6T4C型のFeRAM(110)の強誘電体キャパシタに蓄積された分極情報を揮発性蓄積ノードへ出力するリコール動作を実行するリコール制御回路(111)と、を備えている。また、リコール制御回路(111)は、リーダ・ライタ機器(120)から送信された無線信号に応じてRFIDタグLSI(100)が起電した後、所定のコマンドを含んだ無線信号を受信するまでの間にリコール動作を実行する。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009501079A JPWO2008105076A1 (ja) | 2007-02-27 | 2007-02-27 | Rfidタグlsiおよびrfidタグ制御方法 |
| PCT/JP2007/053675 WO2008105076A1 (ja) | 2007-02-27 | 2007-02-27 | Rfidタグlsiおよびrfidタグ制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2007/053675 WO2008105076A1 (ja) | 2007-02-27 | 2007-02-27 | Rfidタグlsiおよびrfidタグ制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008105076A1 true WO2008105076A1 (ja) | 2008-09-04 |
Family
ID=39720922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2007/053675 Ceased WO2008105076A1 (ja) | 2007-02-27 | 2007-02-27 | Rfidタグlsiおよびrfidタグ制御方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2008105076A1 (ja) |
| WO (1) | WO2008105076A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019079589A (ja) * | 2019-01-29 | 2019-05-23 | ローム株式会社 | 半導体記憶装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07182872A (ja) * | 1993-12-22 | 1995-07-21 | Hitachi Ltd | 半導体メモリ |
| JPH09245486A (ja) * | 1996-03-04 | 1997-09-19 | Hitachi Ltd | 強誘電体メモリ |
| JPH09511886A (ja) * | 1994-10-26 | 1997-11-25 | シーメンス アクチエンゲゼルシヤフト | エネルギーおよびデータの無接触伝送システム |
| JP2003162700A (ja) * | 2001-11-27 | 2003-06-06 | Sharp Corp | 半導体装置の動作制御方法、半導体装置動作制御プログラム、半導体装置動作制御プログラムを記録した記録媒体、半導体装置、およびicカード |
| JP2003203213A (ja) * | 2002-01-08 | 2003-07-18 | Dainippon Printing Co Ltd | 認証管理アプリケーション、認証アプリケーション及びicカード |
| JP2003296681A (ja) * | 2002-03-29 | 2003-10-17 | Fujitsu Ltd | 半導体集積回路、無線タグ、および非接触型icカード |
| JP2005092922A (ja) * | 2003-09-12 | 2005-04-07 | Fujitsu Ltd | 強誘電体メモリ |
-
2007
- 2007-02-27 WO PCT/JP2007/053675 patent/WO2008105076A1/ja not_active Ceased
- 2007-02-27 JP JP2009501079A patent/JPWO2008105076A1/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07182872A (ja) * | 1993-12-22 | 1995-07-21 | Hitachi Ltd | 半導体メモリ |
| JPH09511886A (ja) * | 1994-10-26 | 1997-11-25 | シーメンス アクチエンゲゼルシヤフト | エネルギーおよびデータの無接触伝送システム |
| JPH09245486A (ja) * | 1996-03-04 | 1997-09-19 | Hitachi Ltd | 強誘電体メモリ |
| JP2003162700A (ja) * | 2001-11-27 | 2003-06-06 | Sharp Corp | 半導体装置の動作制御方法、半導体装置動作制御プログラム、半導体装置動作制御プログラムを記録した記録媒体、半導体装置、およびicカード |
| JP2003203213A (ja) * | 2002-01-08 | 2003-07-18 | Dainippon Printing Co Ltd | 認証管理アプリケーション、認証アプリケーション及びicカード |
| JP2003296681A (ja) * | 2002-03-29 | 2003-10-17 | Fujitsu Ltd | 半導体集積回路、無線タグ、および非接触型icカード |
| JP2005092922A (ja) * | 2003-09-12 | 2005-04-07 | Fujitsu Ltd | 強誘電体メモリ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019079589A (ja) * | 2019-01-29 | 2019-05-23 | ローム株式会社 | 半導体記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2008105076A1 (ja) | 2010-06-03 |
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