[go: up one dir, main page]

WO2008105076A1 - Rfid tag lsi and rfid tag control method - Google Patents

Rfid tag lsi and rfid tag control method Download PDF

Info

Publication number
WO2008105076A1
WO2008105076A1 PCT/JP2007/053675 JP2007053675W WO2008105076A1 WO 2008105076 A1 WO2008105076 A1 WO 2008105076A1 JP 2007053675 W JP2007053675 W JP 2007053675W WO 2008105076 A1 WO2008105076 A1 WO 2008105076A1
Authority
WO
WIPO (PCT)
Prior art keywords
rfid tag
lsi
recall
control method
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/053675
Other languages
French (fr)
Japanese (ja)
Inventor
Shoichi Masui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to PCT/JP2007/053675 priority Critical patent/WO2008105076A1/en
Priority to JP2009501079A priority patent/JPWO2008105076A1/en
Publication of WO2008105076A1 publication Critical patent/WO2008105076A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0072Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Near-Field Transmission Systems (AREA)

Abstract

An RFID tag LSI (100) is equipped with a recall control circuit (111) for executing a recall operation in which polarization information stored in the ferroelectric capacitors of a 6T4C-type FeRAM (110) is output to volatile storage nodes, the 6T4C-type FeRAM (110) comprising six transistors and four ferroelectric capacitors. The recall control circuit (111) executes the recall operation in the interval after the RFID tag LSI (100) generates power in response to a radio signal transmitted from a reading/writing device (120) and before the radio signal including a predetermined command is received.
PCT/JP2007/053675 2007-02-27 2007-02-27 Rfid tag lsi and rfid tag control method Ceased WO2008105076A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/053675 WO2008105076A1 (en) 2007-02-27 2007-02-27 Rfid tag lsi and rfid tag control method
JP2009501079A JPWO2008105076A1 (en) 2007-02-27 2007-02-27 RFID tag LSI and RFID tag control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053675 WO2008105076A1 (en) 2007-02-27 2007-02-27 Rfid tag lsi and rfid tag control method

Publications (1)

Publication Number Publication Date
WO2008105076A1 true WO2008105076A1 (en) 2008-09-04

Family

ID=39720922

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053675 Ceased WO2008105076A1 (en) 2007-02-27 2007-02-27 Rfid tag lsi and rfid tag control method

Country Status (2)

Country Link
JP (1) JPWO2008105076A1 (en)
WO (1) WO2008105076A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019079589A (en) * 2019-01-29 2019-05-23 ローム株式会社 Semiconductor storage device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07182872A (en) * 1993-12-22 1995-07-21 Hitachi Ltd Semiconductor memory
JPH09245486A (en) * 1996-03-04 1997-09-19 Hitachi Ltd Ferroelectric memory
JPH09511886A (en) * 1994-10-26 1997-11-25 シーメンス アクチエンゲゼルシヤフト Energy and data contactless transmission system
JP2003162700A (en) * 2001-11-27 2003-06-06 Sharp Corp Semiconductor device operation control method, semiconductor device operation control program, recording medium recording semiconductor device operation control program, semiconductor device, and IC card
JP2003203213A (en) * 2002-01-08 2003-07-18 Dainippon Printing Co Ltd Authentication management application, authentication application and IC card
JP2003296681A (en) * 2002-03-29 2003-10-17 Fujitsu Ltd Semiconductor integrated circuit, wireless tag, and contactless IC card
JP2005092922A (en) * 2003-09-12 2005-04-07 Fujitsu Ltd Ferroelectric memory

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07182872A (en) * 1993-12-22 1995-07-21 Hitachi Ltd Semiconductor memory
JPH09511886A (en) * 1994-10-26 1997-11-25 シーメンス アクチエンゲゼルシヤフト Energy and data contactless transmission system
JPH09245486A (en) * 1996-03-04 1997-09-19 Hitachi Ltd Ferroelectric memory
JP2003162700A (en) * 2001-11-27 2003-06-06 Sharp Corp Semiconductor device operation control method, semiconductor device operation control program, recording medium recording semiconductor device operation control program, semiconductor device, and IC card
JP2003203213A (en) * 2002-01-08 2003-07-18 Dainippon Printing Co Ltd Authentication management application, authentication application and IC card
JP2003296681A (en) * 2002-03-29 2003-10-17 Fujitsu Ltd Semiconductor integrated circuit, wireless tag, and contactless IC card
JP2005092922A (en) * 2003-09-12 2005-04-07 Fujitsu Ltd Ferroelectric memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019079589A (en) * 2019-01-29 2019-05-23 ローム株式会社 Semiconductor storage device

Also Published As

Publication number Publication date
JPWO2008105076A1 (en) 2010-06-03

Similar Documents

Publication Publication Date Title
TWI321756B (en) Integrated circuit with embedded feram-based rfid
US8923088B2 (en) Solid state storage device with sleep control circuit
CA2415661A1 (en) A method for performing write and read operations in a passive matrix memory, and apparatus for performing the method
WO2004017327A3 (en) Ferroelectric memory device, circuits and methods for its operation
EP1154436A3 (en) Semiconductor memory device
WO2009016832A1 (en) Nonvolatile storage device and nonvolatile storage system
WO2009032751A3 (en) Memory power management
WO2009028205A1 (en) Electronic advertizing display and information renewal method of electronic advertizing display
WO2003046922A3 (en) Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-write memory cells
DK1927087T3 (en) Dynamic transaction card and method of writing information for this
US7920064B2 (en) Radio frequency identification tag capable of storing and restoring flag data
TW200641631A (en) Output system, printing system, print instruction issuing device, printing device management device and printing device, recording medium recording, print instruction issuing program recording medium recording printing device management program and recor
TW200742295A (en) Method and device for emulating multiple RFID tags within a single mobile electronic device
JP2005293563A5 (en)
KR20060123863A (en) RFID Devices Including Nonvolatile Ferroelectric Memory
JP2012128860A5 (en)
CN101855641A (en) Chip card comprising a display
KR100649832B1 (en) RFID Devices Including Nonvolatile Ferroelectric Memory
WO2008105076A1 (en) Rfid tag lsi and rfid tag control method
WO2006086518A3 (en) Rf tag system with single step read and write commands
WO2006126134A3 (en) Portable electronic terminal and method therefor.
KR100843887B1 (en) Integrated circuits and information recording methods
TW200713313A (en) Semiconductor memory device
CN102362436B (en) Power Saving Methods and RFID Tags
ATE404974T1 (en) REAL-TIME PROTECTED WRITE TO NON-VOLATILE STORAGE

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07715010

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009501079

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07715010

Country of ref document: EP

Kind code of ref document: A1