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WO2008156071A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2008156071A1
WO2008156071A1 PCT/JP2008/061020 JP2008061020W WO2008156071A1 WO 2008156071 A1 WO2008156071 A1 WO 2008156071A1 JP 2008061020 W JP2008061020 W JP 2008061020W WO 2008156071 A1 WO2008156071 A1 WO 2008156071A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
trenches
channel
embedded electrode
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061020
Other languages
English (en)
French (fr)
Inventor
Masaru Takaishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007161052A external-priority patent/JP2009004413A/ja
Priority claimed from JP2007161049A external-priority patent/JP2009004411A/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/665,584 priority Critical patent/US8816419B2/en
Publication of WO2008156071A1 publication Critical patent/WO2008156071A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

　スイッチング速度を高速化することが可能な半導体装置を提供する。この半導体装置（２０）は、互いに所定の間隔（ｂ）を隔てて配列された複数のトレンチ（３）を有するｎ型エピタキシャル層（２）と、複数のトレンチ（３）の各々を埋め込むように、トレンチ（３）の内面上にシリコン酸化膜（４）を介して形成された埋め込み電極（５）と、埋め込み電極（５）の上方に、シリコン酸化膜（６）を介して配設されることにより、埋め込み電極（５）と容量結合されたメタル層（７）とを備えている。また、半導体装置（２０）は、互いに隣り合うトレンチ（３）間の領域がチャネル（電流通路）（１１）となるように構成されており、この領域をトレンチ（３）の周辺に形成された空乏層で塞ぐことによって、チャネル（１１）を流れる電流が遮断される一方、トレンチ（３）の周辺の空乏層を消滅させることによって、チャネル（１１）を介して電流が流れるように構成されている。
PCT/JP2008/061020 2007-06-19 2008-06-17 半導体装置 Ceased WO2008156071A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/665,584 US8816419B2 (en) 2007-06-19 2008-06-17 Semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-161052 2007-06-19
JP2007-161049 2007-06-19
JP2007161052A JP2009004413A (ja) 2007-06-19 2007-06-19 半導体装置
JP2007161049A JP2009004411A (ja) 2007-06-19 2007-06-19 半導体装置

Publications (1)

Publication Number Publication Date
WO2008156071A1 true WO2008156071A1 (ja) 2008-12-24

Family

ID=40156230

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061020 Ceased WO2008156071A1 (ja) 2007-06-19 2008-06-17 半導体装置

Country Status (2)

Country Link
US (1) US8816419B2 (ja)
WO (1) WO2008156071A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102770947A (zh) * 2009-10-20 2012-11-07 维西埃-硅化物公司 超高密度功率沟槽式金属氧化物半导体场效应晶体管
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9761696B2 (en) 2007-04-03 2017-09-12 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008153142A1 (ja) 2007-06-15 2008-12-18 Rohm Co., Ltd. 半導体装置
WO2008156070A1 (ja) * 2007-06-18 2008-12-24 Rohm Co., Ltd. 半導体装置
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
FR3085540B1 (fr) 2018-08-31 2020-09-25 St Microelectronics Rousset Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication
JP7365306B2 (ja) * 2020-09-09 2023-10-19 株式会社東芝 半導体装置
JP7726773B6 (ja) 2021-12-17 2025-09-19 株式会社東芝 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210535A (ja) * 2005-01-26 2006-08-10 Toyota Industries Corp 半導体装置
JP2006237066A (ja) * 2005-02-22 2006-09-07 Toshiba Corp 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US214197A (en) * 1879-04-08 Improvement in shuttle-box mechanisms
US5679966A (en) * 1995-10-05 1997-10-21 North Carolina State University Depleted base transistor with high forward voltage blocking capability
JP2001007149A (ja) 1999-06-24 2001-01-12 Nec Corp 高出力半導体装置
JP4528460B2 (ja) * 2000-06-30 2010-08-18 株式会社東芝 半導体素子
JP4357753B2 (ja) * 2001-01-26 2009-11-04 株式会社東芝 高耐圧半導体装置
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2002289816A (ja) * 2001-03-23 2002-10-04 Toshiba Corp 半導体装置及びその製造方法
JP3617971B2 (ja) * 2001-12-11 2005-02-09 株式会社東芝 半導体記憶装置
US7462908B2 (en) * 2004-07-14 2008-12-09 International Rectifier Corporation Dynamic deep depletion field effect transistor
WO2008153142A1 (ja) 2007-06-15 2008-12-18 Rohm Co., Ltd. 半導体装置
WO2008156070A1 (ja) 2007-06-18 2008-12-24 Rohm Co., Ltd. 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210535A (ja) * 2005-01-26 2006-08-10 Toyota Industries Corp 半導体装置
JP2006237066A (ja) * 2005-02-22 2006-09-07 Toshiba Corp 半導体装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US9761696B2 (en) 2007-04-03 2017-09-12 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
KR101869323B1 (ko) * 2009-10-20 2018-06-20 비쉐이-실리코닉스 초고밀도 전력 트렌치 mosfet
CN102770947B (zh) * 2009-10-20 2015-07-01 维西埃-硅化物公司 超高密度功率沟槽式金属氧化物半导体场效应晶体管
EP2491581A4 (en) * 2009-10-20 2014-04-09 Vishay Siliconix POWER TRENCH MOSFET WITH SUPERHIGH DENSITY
CN102770947A (zh) * 2009-10-20 2012-11-07 维西埃-硅化物公司 超高密度功率沟槽式金属氧化物半导体场效应晶体管
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US10283587B2 (en) 2014-06-23 2019-05-07 Vishay-Siliconix Modulated super junction power MOSFET devices
US9882044B2 (en) 2014-08-19 2018-01-30 Vishay-Siliconix Edge termination for super-junction MOSFETs
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET
US10340377B2 (en) 2014-08-19 2019-07-02 Vishay-Siliconix Edge termination for super-junction MOSFETs
US10444262B2 (en) 2014-08-19 2019-10-15 Vishay-Siliconix Vertical sense devices in vertical trench MOSFET
US10527654B2 (en) 2014-08-19 2020-01-07 Vishay SIliconix, LLC Vertical sense devices in vertical trench MOSFET

Also Published As

Publication number Publication date
US8816419B2 (en) 2014-08-26
US20100181606A1 (en) 2010-07-22

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