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WO2008153052A1 - プラズマ処理装置およびプラズマ処理装置の使用方法 - Google Patents

プラズマ処理装置およびプラズマ処理装置の使用方法 Download PDF

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Publication number
WO2008153052A1
WO2008153052A1 PCT/JP2008/060671 JP2008060671W WO2008153052A1 WO 2008153052 A1 WO2008153052 A1 WO 2008153052A1 JP 2008060671 W JP2008060671 W JP 2008060671W WO 2008153052 A1 WO2008153052 A1 WO 2008153052A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
microwave
plasma processing
internal conductor
processing container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060671
Other languages
English (en)
French (fr)
Inventor
Masaki Hirayama
Tadahiro Ohmi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Tokyo Electron Ltd
Original Assignee
Tohoku University NUC
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Tokyo Electron Ltd filed Critical Tohoku University NUC
Priority to JP2009519272A priority Critical patent/JPWO2008153052A1/ja
Publication of WO2008153052A1 publication Critical patent/WO2008153052A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

【課題】低周波数の電磁波を用いることができるプラズマ処理装置を提供する。 【解決手段】プラズマ処理装置１０は、処理容器１００と、マイクロ波を出力するマイクロ波源９００と、マイクロ波源９００から出力されたマイクロ波を伝送させる内部導体３１５ａと内部導体３１５ａに隣接または近接し、内部導体３１５ａを伝送したマイクロ波を透過させて処理容器１００の内部に放出する誘電体板３０５と、処理容器１００の内面に設けられた伝搬障害部（たとえば、溝３００ａ）を有する。低周波数のマイクロ波をプラズマ処理装置１０に供給することにより、プロセスウィンドウを広げることができる。  
PCT/JP2008/060671 2007-06-11 2008-06-11 プラズマ処理装置およびプラズマ処理装置の使用方法 Ceased WO2008153052A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009519272A JPWO2008153052A1 (ja) 2007-06-11 2008-06-11 プラズマ処理装置およびプラズマ処理装置の使用方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007153542 2007-06-11
JP2007-153542 2007-06-11

Publications (1)

Publication Number Publication Date
WO2008153052A1 true WO2008153052A1 (ja) 2008-12-18

Family

ID=40129657

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060671 Ceased WO2008153052A1 (ja) 2007-06-11 2008-06-11 プラズマ処理装置およびプラズマ処理装置の使用方法

Country Status (3)

Country Link
JP (1) JPWO2008153052A1 (ja)
TW (1) TW200908076A (ja)
WO (1) WO2008153052A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038461A (ja) * 2010-08-04 2012-02-23 Tokyo Electron Ltd プラズマ処理装置
JP2013098337A (ja) * 2011-10-31 2013-05-20 Mitsubishi Heavy Ind Ltd 真空処理装置
WO2013105358A1 (ja) * 2012-01-10 2013-07-18 東京エレクトロン株式会社 表面波プラズマ処理装置
US20130264014A1 (en) * 2012-03-12 2013-10-10 Tokyo Electron Limited Plasma processing apparatus

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10158847A (ja) * 1996-12-06 1998-06-16 Toshiba Corp マイクロ波励起によるプラズマ処理装置
JPH11214196A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp プラズマ発生装置
JP2000286237A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2002203844A (ja) * 2000-10-13 2002-07-19 Tokyo Electron Ltd プラズマ処理装置
JP2003045848A (ja) * 2001-07-27 2003-02-14 Shibaura Mechatronics Corp プラズマ処理装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005019508A (ja) * 2003-06-24 2005-01-20 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2005044822A (ja) * 2003-07-22 2005-02-17 Shibaura Mechatronics Corp プラズマ処理装置
JP2005135801A (ja) * 2003-10-31 2005-05-26 Canon Inc 処理装置
JP2005353364A (ja) * 2004-06-09 2005-12-22 Shibaura Mechatronics Corp プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法
JP2006310794A (ja) * 2005-03-30 2006-11-09 Tokyo Electron Ltd プラズマ処理装置と方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10158847A (ja) * 1996-12-06 1998-06-16 Toshiba Corp マイクロ波励起によるプラズマ処理装置
JPH11214196A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp プラズマ発生装置
JP2000286237A (ja) * 1999-03-30 2000-10-13 Rohm Co Ltd 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造
JP2002203844A (ja) * 2000-10-13 2002-07-19 Tokyo Electron Ltd プラズマ処理装置
JP2003045848A (ja) * 2001-07-27 2003-02-14 Shibaura Mechatronics Corp プラズマ処理装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005019508A (ja) * 2003-06-24 2005-01-20 Hitachi High-Technologies Corp プラズマ処理装置及び処理方法
JP2005044822A (ja) * 2003-07-22 2005-02-17 Shibaura Mechatronics Corp プラズマ処理装置
JP2005135801A (ja) * 2003-10-31 2005-05-26 Canon Inc 処理装置
JP2005353364A (ja) * 2004-06-09 2005-12-22 Shibaura Mechatronics Corp プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法
JP2006310794A (ja) * 2005-03-30 2006-11-09 Tokyo Electron Ltd プラズマ処理装置と方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038461A (ja) * 2010-08-04 2012-02-23 Tokyo Electron Ltd プラズマ処理装置
JP2013098337A (ja) * 2011-10-31 2013-05-20 Mitsubishi Heavy Ind Ltd 真空処理装置
WO2013105358A1 (ja) * 2012-01-10 2013-07-18 東京エレクトロン株式会社 表面波プラズマ処理装置
US20130264014A1 (en) * 2012-03-12 2013-10-10 Tokyo Electron Limited Plasma processing apparatus
US9807862B2 (en) * 2012-03-12 2017-10-31 Tokoyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
JPWO2008153052A1 (ja) 2010-08-26
TW200908076A (en) 2009-02-16

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