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WO2008149806A1 - Procédé pour évaluer une contamination d'un appareil de fabrication de semi-conducteur - Google Patents

Procédé pour évaluer une contamination d'un appareil de fabrication de semi-conducteur Download PDF

Info

Publication number
WO2008149806A1
WO2008149806A1 PCT/JP2008/060023 JP2008060023W WO2008149806A1 WO 2008149806 A1 WO2008149806 A1 WO 2008149806A1 JP 2008060023 W JP2008060023 W JP 2008060023W WO 2008149806 A1 WO2008149806 A1 WO 2008149806A1
Authority
WO
WIPO (PCT)
Prior art keywords
contamination
semiconductor manufacturing
manufacturing apparatus
semiconductor wafer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060023
Other languages
English (en)
Japanese (ja)
Inventor
Kenji Araki
Takao Takenaka
Masanori Mayusumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2009517843A priority Critical patent/JP5120789B2/ja
Publication of WO2008149806A1 publication Critical patent/WO2008149806A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé pour évaluer une contamination d'appareils de fabrication de semi-conducteur, tels qu'un appareil de croissance en phase vapeur, par lequel une quantité de contamination dans un traitement (par exemple, une croissance en phase vapeur) peut être obtenue par évaluation. Dans le procédé pour évaluer une contamination de l'appareil de fabrication de semi-conducteur, une tranche semi-conductrice à évaluer est fabriquée par application d'une procédure prescrite à une tranche semi-conductrice échantillon à l'aide de l'appareil de fabrication de semi-conducteur, et une contamination de la tranche semi-conductrice fabriquée est évaluée. La surface de la tranche semi-conductrice échantillon est couverte d'au moins un type de film sélectionné parmi un groupe composé d'un film de silicium oxydé thermiquement, d'un film d'oxyde de silicium déposé par CVD, d'un film de silicium amorphe et d'un film de polysilicium.
PCT/JP2008/060023 2007-06-05 2008-05-30 Procédé pour évaluer une contamination d'un appareil de fabrication de semi-conducteur Ceased WO2008149806A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009517843A JP5120789B2 (ja) 2007-06-05 2008-05-30 半導体製造装置の汚染評価方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007149659 2007-06-05
JP2007-149659 2007-06-05

Publications (1)

Publication Number Publication Date
WO2008149806A1 true WO2008149806A1 (fr) 2008-12-11

Family

ID=40093624

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060023 Ceased WO2008149806A1 (fr) 2007-06-05 2008-05-30 Procédé pour évaluer une contamination d'un appareil de fabrication de semi-conducteur

Country Status (3)

Country Link
JP (1) JP5120789B2 (fr)
TW (1) TW200915459A (fr)
WO (1) WO2008149806A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012058078A (ja) * 2010-09-09 2012-03-22 Sumco Corp 環境雰囲気の不純物汚染評価方法
JP2014045007A (ja) * 2012-08-24 2014-03-13 Shin Etsu Handotai Co Ltd 気相成長装置の汚染評価方法及びシリコンエピタキシャルウェーハの製造方法
JP2014099479A (ja) * 2012-11-13 2014-05-29 Sumco Corp エピタキシャル成長装置炉内の汚染評価方法および汚染評価用テストウェーハ
JP2014099478A (ja) * 2012-11-13 2014-05-29 Sumco Corp エピタキシャルシリコンウェーハの汚染評価方法およびエピタキシャル成長装置炉内の汚染評価方法
TWI584352B (zh) * 2013-03-12 2017-05-21 環球晶圓日本股份有限公司 飽和電壓估計方法及矽磊晶晶圓製造方法
KR20200095661A (ko) * 2019-02-01 2020-08-11 에스케이실트론 주식회사 에피택셜웨이퍼의 금속오염분석방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60150620A (ja) * 1984-01-18 1985-08-08 Toshiba Corp 清浄度評価方法
JPH11204604A (ja) * 1998-01-12 1999-07-30 Shin Etsu Handotai Co Ltd ウエーハ周辺部の金属不純物回収方法とその装置
JP2001174375A (ja) * 1999-12-20 2001-06-29 Toshiba Corp 金属汚染評価用ウェハおよび金属汚染評価方法
JP2002252179A (ja) * 2001-02-22 2002-09-06 Shin Etsu Handotai Co Ltd 半導体基板熱処理用チューブの清浄化方法並びに金属汚染ゲッター基板及び再生金属汚染ゲッター基板

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4761179B2 (ja) * 2001-07-19 2011-08-31 信越半導体株式会社 ウェーハ表面に吸着したボロン濃度の測定方法及び環境雰囲気中のボロンレベルの評価方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60150620A (ja) * 1984-01-18 1985-08-08 Toshiba Corp 清浄度評価方法
JPH11204604A (ja) * 1998-01-12 1999-07-30 Shin Etsu Handotai Co Ltd ウエーハ周辺部の金属不純物回収方法とその装置
JP2001174375A (ja) * 1999-12-20 2001-06-29 Toshiba Corp 金属汚染評価用ウェハおよび金属汚染評価方法
JP2002252179A (ja) * 2001-02-22 2002-09-06 Shin Etsu Handotai Co Ltd 半導体基板熱処理用チューブの清浄化方法並びに金属汚染ゲッター基板及び再生金属汚染ゲッター基板

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012058078A (ja) * 2010-09-09 2012-03-22 Sumco Corp 環境雰囲気の不純物汚染評価方法
JP2014045007A (ja) * 2012-08-24 2014-03-13 Shin Etsu Handotai Co Ltd 気相成長装置の汚染評価方法及びシリコンエピタキシャルウェーハの製造方法
JP2014099479A (ja) * 2012-11-13 2014-05-29 Sumco Corp エピタキシャル成長装置炉内の汚染評価方法および汚染評価用テストウェーハ
JP2014099478A (ja) * 2012-11-13 2014-05-29 Sumco Corp エピタキシャルシリコンウェーハの汚染評価方法およびエピタキシャル成長装置炉内の汚染評価方法
TWI584352B (zh) * 2013-03-12 2017-05-21 環球晶圓日本股份有限公司 飽和電壓估計方法及矽磊晶晶圓製造方法
KR20200095661A (ko) * 2019-02-01 2020-08-11 에스케이실트론 주식회사 에피택셜웨이퍼의 금속오염분석방법
KR102261633B1 (ko) 2019-02-01 2021-06-04 에스케이실트론 주식회사 에피택셜웨이퍼의 금속오염분석방법

Also Published As

Publication number Publication date
TW200915459A (en) 2009-04-01
JP5120789B2 (ja) 2013-01-16
JPWO2008149806A1 (ja) 2010-08-26

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