SE0900641L - Förfarande för framställning av halvledaranordning - Google Patents
Förfarande för framställning av halvledaranordningInfo
- Publication number
- SE0900641L SE0900641L SE0900641A SE0900641A SE0900641L SE 0900641 L SE0900641 L SE 0900641L SE 0900641 A SE0900641 A SE 0900641A SE 0900641 A SE0900641 A SE 0900641A SE 0900641 L SE0900641 L SE 0900641L
- Authority
- SE
- Sweden
- Prior art keywords
- impurity
- stage
- type channel
- channel layer
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 7
- 238000005530 etching Methods 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H01L21/203—
-
- H01L21/2033—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008125683A JP2009277757A (ja) | 2008-05-13 | 2008-05-13 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE0900641L true SE0900641L (sv) | 2009-11-14 |
| SE533083C2 SE533083C2 (sv) | 2010-06-22 |
Family
ID=41416046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0900641A SE533083C2 (sv) | 2008-05-13 | 2009-05-12 | Förfarande för framställning av halvledaranordning |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2009277757A (sv) |
| SE (1) | SE533083C2 (sv) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8343854B2 (en) * | 2008-06-04 | 2013-01-01 | Dow Corning Corporation | Method of reducing memory effects in semiconductor epitaxy |
| JP5698043B2 (ja) * | 2010-08-04 | 2015-04-08 | 株式会社ニューフレアテクノロジー | 半導体製造装置 |
| JP2013201190A (ja) | 2012-03-23 | 2013-10-03 | Toshiba Corp | 接合形電界効果トランジスタ及びその製造方法 |
| JP6541257B2 (ja) * | 2015-06-22 | 2019-07-10 | 昭和電工株式会社 | 炭化珪素膜の成膜装置のクリーニング方法 |
| JP6547444B2 (ja) * | 2015-06-24 | 2019-07-24 | 株式会社デンソー | 炭化珪素半導体のエピタキシャル成長方法 |
| JP2017165615A (ja) * | 2016-03-16 | 2017-09-21 | 住友電気工業株式会社 | 炭化珪素のエピタキシャル成長装置 |
| JP6786939B2 (ja) * | 2016-08-05 | 2020-11-18 | 富士電機株式会社 | 炭化珪素半導体基板および炭化珪素半導体基板の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0258325A (ja) * | 1988-08-24 | 1990-02-27 | Matsushita Electric Ind Co Ltd | 半導体薄膜気相成長装置 |
| JP3070309B2 (ja) * | 1992-12-07 | 2000-07-31 | 富士電機株式会社 | 薄膜太陽電池の製造方法 |
| JP3624963B2 (ja) * | 1995-01-27 | 2005-03-02 | 川崎マイクロエレクトロニクス株式会社 | 成膜装置のクリーニング方法 |
| JP2802747B2 (ja) * | 1996-02-23 | 1998-09-24 | 株式会社半導体エネルギー研究所 | プラズマ処理方法 |
| JP3603598B2 (ja) * | 1997-08-04 | 2004-12-22 | 住友化学株式会社 | ３−５族化合物半導体の製造方法 |
| JP4487655B2 (ja) * | 2004-04-14 | 2010-06-23 | 株式会社デンソー | 半導体装置の製造方法 |
| ITMI20041677A1 (it) * | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
-
2008
- 2008-05-13 JP JP2008125683A patent/JP2009277757A/ja active Pending
-
2009
- 2009-05-12 SE SE0900641A patent/SE533083C2/sv unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE533083C2 (sv) | 2010-06-22 |
| JP2009277757A (ja) | 2009-11-26 |
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