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WO2008148736A3 - Verfahren zur herstellung eines mems-packages - Google Patents

Verfahren zur herstellung eines mems-packages Download PDF

Info

Publication number
WO2008148736A3
WO2008148736A3 PCT/EP2008/056787 EP2008056787W WO2008148736A3 WO 2008148736 A3 WO2008148736 A3 WO 2008148736A3 EP 2008056787 W EP2008056787 W EP 2008056787W WO 2008148736 A3 WO2008148736 A3 WO 2008148736A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
mems chip
mems package
created
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/056787
Other languages
English (en)
French (fr)
Other versions
WO2008148736A2 (de
Inventor
Christian Bauer
Gregor Feiertag
Hans Krueger
Alois Stelzl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Priority to JP2010510758A priority Critical patent/JP5450396B2/ja
Publication of WO2008148736A2 publication Critical patent/WO2008148736A2/de
Publication of WO2008148736A3 publication Critical patent/WO2008148736A3/de
Priority to US12/627,707 priority patent/US8404516B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Micromachines (AREA)
  • Wire Bonding (AREA)

Abstract

Zur Verkapselung eines MEMS-Chips wird vorgeschlagen, diesen auf einen planarisierten Metallrahmen aufzusetzen, der auf einem keramischen Trägersubstrat angeordnet ist. In einem thermischen Schritt wird dazu sowohl die elektrische Verbindung zwischen dem MEMS-Chip und Kontakten auf dem Trägersubstrat über Bumps vorgenommen, als auch eine ausreichend dichte und mechanisch stabile Verbindung zwischen Metallrahmen und MEMS-Chip hergestellt.
PCT/EP2008/056787 2007-06-04 2008-06-02 Verfahren zur herstellung eines mems-packages Ceased WO2008148736A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010510758A JP5450396B2 (ja) 2007-06-04 2008-06-02 Ｍｅｍｓパッケージの製造方法
US12/627,707 US8404516B2 (en) 2007-06-04 2009-11-30 Method for producing a MEMS package

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007025992.3 2007-06-04
DE102007025992A DE102007025992A1 (de) 2007-06-04 2007-06-04 Verfahren zur Herstellung eines MEMS-Packages

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/627,707 Continuation US8404516B2 (en) 2007-06-04 2009-11-30 Method for producing a MEMS package

Publications (2)

Publication Number Publication Date
WO2008148736A2 WO2008148736A2 (de) 2008-12-11
WO2008148736A3 true WO2008148736A3 (de) 2009-04-02

Family

ID=39942019

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/056787 Ceased WO2008148736A2 (de) 2007-06-04 2008-06-02 Verfahren zur herstellung eines mems-packages

Country Status (4)

Country Link
US (1) US8404516B2 (de)
JP (1) JP5450396B2 (de)
DE (1) DE102007025992A1 (de)
WO (1) WO2008148736A2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8618620B2 (en) 2010-07-13 2013-12-31 Infineon Technologies Ag Pressure sensor package systems and methods
DE102010032506A1 (de) 2010-07-28 2012-02-02 Epcos Ag Modul und Herstellungsverfahren
DE102010033551A1 (de) * 2010-08-05 2012-02-09 Epcos Ag Verfahren zur Herstellung einer Mehrzahl von elektronischen Bauelementen mit elektromagnetischer Schirmung und elektronisches Bauelement mit elektromagnetischer Schirmung
WO2012016898A2 (de) 2010-08-05 2012-02-09 Epcos Ag Verfahren zur herstellung einer mehrzahl von elektronischen bauelementen mit elektromagnetischer schirmung und insbesondere mit wärmeabführung und elektronisches bauelement mit elektromagnetischer schirmung und insbesondere mit wärmeabführung
DE102011018296B4 (de) 2010-08-25 2020-07-30 Snaptrack, Inc. Bauelement und Verfahren zum Herstellen eines Bauelements
DE102010056431B4 (de) * 2010-12-28 2012-09-27 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
DE102011016554B4 (de) * 2011-04-08 2018-11-22 Snaptrack, Inc. Waferlevel-Package und Verfahren zur Herstellung
TW201250947A (en) * 2011-05-12 2012-12-16 Siliconware Precision Industries Co Ltd Package structure having a micromechanical electronic component and method of making same
DE102011112476A1 (de) * 2011-09-05 2013-03-07 Epcos Ag Bauelement und Verfahren zum Herstellen eines Bauelements
JP5912048B2 (ja) * 2012-02-15 2016-04-27 アルプス電気株式会社 半導体素子の製造方法
KR20140023112A (ko) * 2012-08-17 2014-02-26 삼성전자주식회사 반도체 패키지를 포함하는 전자 장치 및 그 제조 방법
JP6179843B2 (ja) * 2012-12-04 2017-08-16 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 実装装置及び実装方法
DE102012223982A1 (de) 2012-12-20 2014-06-26 Continental Teves Ag & Co. Ohg Verfahren zum Herstellen einer elektronischen Baugruppe
WO2014115331A1 (ja) * 2013-01-28 2014-07-31 株式会社島津製作所 ガス圧力コントローラ
US9368458B2 (en) 2013-07-10 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Die-on-interposer assembly with dam structure and method of manufacturing the same
US9343431B2 (en) 2013-07-10 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Dam structure for enhancing joint yield in bonding processes
CN104425419B (zh) * 2013-08-30 2017-11-03 台湾积体电路制造股份有限公司 半导体器件及其制造方法
DE102013220908B4 (de) * 2013-10-15 2015-09-24 Continental Automotive Gmbh Sensorelement
DE102013224645A1 (de) * 2013-11-29 2015-06-03 Continental Teves Ag & Co. Ohg Verfahren zum Herstellen einer elektronischen Baugruppe
US9449934B2 (en) * 2013-12-04 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Solder joint structure for ball grid array in wafer level package
CN105084294A (zh) * 2014-04-21 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种mems器件及其制备方法、电子装置
DE102015100757B3 (de) * 2015-01-20 2016-06-16 Epcos Ag Modul mit spannungsfrei befestigtem MEMS-Bauelement
CN107534741A (zh) * 2015-04-17 2018-01-02 奥林巴斯株式会社 摄像装置
US10141197B2 (en) * 2016-03-30 2018-11-27 Stmicroelectronics S.R.L. Thermosonically bonded connection for flip chip packages
KR101837514B1 (ko) * 2016-06-07 2018-03-14 주식회사 네패스 반도체 패키지, 이의 제조 방법 및 시스템 인 패키지
DE102017106055B4 (de) * 2017-03-21 2021-04-08 Tdk Corporation Trägersubstrat für stressempflindliches Bauelement und Verfahren zur Herstellung
JP6992292B2 (ja) 2017-07-07 2022-01-13 コニカミノルタ株式会社 Ｍｅｍｓトランスデューサーの製造方法、ｍｅｍｓトランスデューサー、超音波探触子、および超音波診断装置
CN107706118A (zh) * 2017-09-07 2018-02-16 维沃移动通信有限公司 一种芯片封装方法及芯片封装结构
DE102019103761A1 (de) 2019-02-14 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines bauelements und bauelement
US11244876B2 (en) * 2019-10-09 2022-02-08 Microchip Technology Inc. Packaged semiconductor die with micro-cavity
CN113819899B (zh) * 2021-11-22 2022-03-11 北京晨晶电子有限公司 异质集成表贴陀螺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030124829A1 (en) * 1999-12-15 2003-07-03 Pace Benedict G. Interconnection method entailing protuberances formed by melting metal over contact areas
US6630725B1 (en) * 2000-10-06 2003-10-07 Motorola, Inc. Electronic component and method of manufacture
EP1433742A2 (de) * 2002-12-27 2004-06-30 Shinko Electric Industries Co. Ltd. Elektronische Bauelemente und Herstellungsverfahren
JP2005251898A (ja) * 2004-03-03 2005-09-15 Mitsubishi Electric Corp ウエハレベルパッケージ構造体とその製造方法、及びそのウエハレベルパッケージ構造体から分割された素子
US20060071324A1 (en) * 2004-09-30 2006-04-06 Daoqiang Lu Microelectronic package having chamber sealed by material including one or more intermetallic compounds
EP1734001A2 (de) * 2005-06-17 2006-12-20 DALSA Semiconductor Inc. Verfahren zum verpacken von MEMS

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3196693B2 (ja) * 1997-08-05 2001-08-06 日本電気株式会社 表面弾性波装置およびその製造方法
JP3644205B2 (ja) * 1997-08-08 2005-04-27 株式会社デンソー 半導体装置及びその製造方法
US6627118B2 (en) * 2000-04-26 2003-09-30 Hitachi Metals, Ltd. Ni alloy particles and method for producing same, and anisotropic conductive film
JP2002280470A (ja) * 2001-03-22 2002-09-27 Aisin Seiki Co Ltd 半導体装置及びその製造方法
DE10164494B9 (de) * 2001-12-28 2014-08-21 Epcos Ag Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung
JP2004012668A (ja) * 2002-06-05 2004-01-15 Nippon Telegr & Teleph Corp <Ntt> 光スイッチ装置及びその製造方法
DE10238523B4 (de) * 2002-08-22 2014-10-02 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung
US6806557B2 (en) * 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
JP4766831B2 (ja) * 2002-11-26 2011-09-07 株式会社村田製作所 電子部品の製造方法
US7170155B2 (en) * 2003-06-25 2007-01-30 Intel Corporation MEMS RF switch module including a vertical via
JP2005212016A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法
DE102004005668B4 (de) * 2004-02-05 2021-09-16 Snaptrack, Inc. Elektrisches Bauelement und Herstellungsverfahren
DE102004020204A1 (de) 2004-04-22 2005-11-10 Epcos Ag Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung
US20060017324A1 (en) * 2004-07-21 2006-01-26 Advanced Powerline Technologies, Inc. Communications network using installed electrical power lines
US7936062B2 (en) * 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
DE102006025162B3 (de) * 2006-05-30 2008-01-31 Epcos Ag Flip-Chip-Bauelement und Verfahren zur Herstellung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030124829A1 (en) * 1999-12-15 2003-07-03 Pace Benedict G. Interconnection method entailing protuberances formed by melting metal over contact areas
US6630725B1 (en) * 2000-10-06 2003-10-07 Motorola, Inc. Electronic component and method of manufacture
EP1433742A2 (de) * 2002-12-27 2004-06-30 Shinko Electric Industries Co. Ltd. Elektronische Bauelemente und Herstellungsverfahren
JP2005251898A (ja) * 2004-03-03 2005-09-15 Mitsubishi Electric Corp ウエハレベルパッケージ構造体とその製造方法、及びそのウエハレベルパッケージ構造体から分割された素子
US20060071324A1 (en) * 2004-09-30 2006-04-06 Daoqiang Lu Microelectronic package having chamber sealed by material including one or more intermetallic compounds
EP1734001A2 (de) * 2005-06-17 2006-12-20 DALSA Semiconductor Inc. Verfahren zum verpacken von MEMS

Also Published As

Publication number Publication date
WO2008148736A2 (de) 2008-12-11
JP2010528881A (ja) 2010-08-26
JP5450396B2 (ja) 2014-03-26
DE102007025992A1 (de) 2008-12-11
US20100127377A1 (en) 2010-05-27
US8404516B2 (en) 2013-03-26

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