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WO2008142768A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008142768A1
WO2008142768A1 PCT/JP2007/060340 JP2007060340W WO2008142768A1 WO 2008142768 A1 WO2008142768 A1 WO 2008142768A1 JP 2007060340 W JP2007060340 W JP 2007060340W WO 2008142768 A1 WO2008142768 A1 WO 2008142768A1
Authority
WO
WIPO (PCT)
Prior art keywords
memory layer
semiconductor device
additional element
phase
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/060340
Other languages
English (en)
French (fr)
Inventor
Kenzo Kurotsuchi
Motoyasu Terao
Takahiro Morikawa
Norikatsu Takaura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to US12/600,333 priority Critical patent/US20100171087A1/en
Priority to PCT/JP2007/060340 priority patent/WO2008142768A1/ja
Priority to JP2009515037A priority patent/JPWO2008142768A1/ja
Publication of WO2008142768A1 publication Critical patent/WO2008142768A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

記憶層をＭ（添加元素）－Ｇｅ－Ｓｂ－Ｔｅの相変化材料（ただし、Ｍは、Ｉｎ、Ｇａ、Ａｌ、Ｚｎ、Ｃｄ、Ｐｂ、Ｓｉ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｔｉ、Ｆｅ、Ｃｏ、Ｎｉ、Ｐｔ、Ｐｄ、Ｙ、Ｅｕの少なくとも１つ）で構成した相変化メモリ素子を備えた半導体装置において、高耐熱性と安定なデータ保持特性とを両立させる。記憶層が、前記添加元素又は前記添加元素の化合物が析出することにより、その層内で組成比の異なる微細構造を持つが、記憶層を構成するＭαＧｅＸＳｂＹＴｅＺの平均組成が０≦α≦０．４、０．０４≦Ｘ≦０．４、０≦Ｙ≦０．３、０．３≦Ｚ≦０．６、０．０３≦（α＋Ｙ）を満たす。
PCT/JP2007/060340 2007-05-21 2007-05-21 半導体装置およびその製造方法 Ceased WO2008142768A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/600,333 US20100171087A1 (en) 2007-05-21 2007-05-21 Semiconductor device and process for producing the same
PCT/JP2007/060340 WO2008142768A1 (ja) 2007-05-21 2007-05-21 半導体装置およびその製造方法
JP2009515037A JPWO2008142768A1 (ja) 2007-05-21 2007-05-21 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060340 WO2008142768A1 (ja) 2007-05-21 2007-05-21 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
WO2008142768A1 true WO2008142768A1 (ja) 2008-11-27

Family

ID=40031495

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060340 Ceased WO2008142768A1 (ja) 2007-05-21 2007-05-21 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US20100171087A1 (ja)
JP (1) JPWO2008142768A1 (ja)
WO (1) WO2008142768A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004448A1 (ja) * 2009-07-06 2011-01-13 株式会社日立製作所 半導体記憶装置およびその製造方法
CN103367633A (zh) * 2012-03-27 2013-10-23 中国科学院上海微系统与信息技术研究所 一种用于相变存储器的钨掺杂改性的相变材料及其应用
US9252358B2 (en) 2012-08-31 2016-02-02 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
CN108987567A (zh) * 2018-06-05 2018-12-11 深圳大学 相变超晶格薄膜、相变存储器单元及其制备方法
KR20200028774A (ko) * 2018-09-07 2020-03-17 한국과학기술연구원 4성분계 이상의 캘코제나이드 상변화 물질 및 이를 포함하는 메모리 소자
KR20210031523A (ko) * 2018-08-21 2021-03-19 마이크론 테크놀로지, 인크 전이 금속 도핑 게르마늄-안티몬-텔루륨(gst) 메모리 디바이스 컴포넌트 및 구성요소

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JP2009043905A (ja) * 2007-08-08 2009-02-26 Hitachi Ltd 半導体装置
KR20110015907A (ko) * 2009-08-10 2011-02-17 삼성전자주식회사 저항체를 이용한 멀티 레벨 메모리 장치
KR101463195B1 (ko) * 2011-04-28 2014-11-21 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
WO2012157910A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
WO2012157909A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
KR101366709B1 (ko) * 2011-05-13 2014-02-24 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
WO2012157913A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
EP2708505B1 (en) * 2011-05-13 2017-08-23 LG Chem, Ltd. Novel compound semiconductor and usage for same
JP6180700B2 (ja) * 2011-09-09 2017-08-16 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
CN102820427B (zh) * 2012-07-31 2015-11-18 宁波大学 Zn掺杂Ge2Sb2Te5相变存储薄膜材料及其制备方法
CN103050624B (zh) * 2013-01-23 2015-01-21 中国科学院上海微系统与信息技术研究所 用于相变存储器的Ga-Ge-Sb-Te薄膜材料
CN104241527B (zh) * 2014-09-30 2017-10-27 中国科学院上海微系统与信息技术研究所 用于相变存储器的V‑Sb‑Te相变材料体系及其制备方法
CN107768516A (zh) * 2016-08-22 2018-03-06 中国科学院上海微系统与信息技术研究所 Y‑Sb‑Te 相变材料、相变存储器单元及其制备方法
CN108899417A (zh) * 2018-07-02 2018-11-27 中国科学院上海微系统与信息技术研究所 Ta-Sb-Te相变材料、相变存储器单元及其制备方法
CN110061131B (zh) * 2019-04-23 2022-09-09 中国科学院上海微系统与信息技术研究所 一种相变材料、相变存储单元及其制备方法
JP2021022711A (ja) * 2019-07-30 2021-02-18 キオクシア株式会社 半導体記憶装置
JP2021048224A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 不揮発性記憶装置
CN111463345B (zh) * 2020-03-26 2022-09-23 中国科学院上海微系统与信息技术研究所 一种Ta-Ge-Sb-Te相变材料及其制备方法和相变存储器单元
KR102871446B1 (ko) 2022-03-21 2025-10-14 삼성전자주식회사 가변 저항 메모리 소자

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JP2004289029A (ja) * 2003-03-25 2004-10-14 Hitachi Ltd 記憶装置
JP2005117030A (ja) * 2003-09-17 2005-04-28 Mitsubishi Materials Corp 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004448A1 (ja) * 2009-07-06 2011-01-13 株式会社日立製作所 半導体記憶装置およびその製造方法
CN103367633A (zh) * 2012-03-27 2013-10-23 中国科学院上海微系统与信息技术研究所 一种用于相变存储器的钨掺杂改性的相变材料及其应用
US9252358B2 (en) 2012-08-31 2016-02-02 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
CN108987567A (zh) * 2018-06-05 2018-12-11 深圳大学 相变超晶格薄膜、相变存储器单元及其制备方法
KR20210031523A (ko) * 2018-08-21 2021-03-19 마이크론 테크놀로지, 인크 전이 금속 도핑 게르마늄-안티몬-텔루륨(gst) 메모리 디바이스 컴포넌트 및 구성요소
JP2021527341A (ja) * 2018-08-21 2021-10-11 マイクロン テクノロジー，インク． 遷移金属ドープのゲルマニウム−アンチモン−テルル（ｇｓｔ）メモリデバイスコンポーネント及び組成物
KR102428687B1 (ko) * 2018-08-21 2022-08-03 마이크론 테크놀로지, 인크 전이 금속 도핑 게르마늄-안티몬-텔루륨(gst) 메모리 디바이스 컴포넌트 및 구성요소
JP2022116167A (ja) * 2018-08-21 2022-08-09 マイクロン テクノロジー，インク． 遷移金属ドープのゲルマニウム－アンチモン－テルル（ｇｓｔ）メモリデバイスコンポーネント及び組成物
JP7314254B2 (ja) 2018-08-21 2023-07-25 マイクロン テクノロジー，インク． 遷移金属ドープのゲルマニウム－アンチモン－テルル（ｇｓｔ）メモリデバイスコンポーネント及び組成物
JP7527326B2 (ja) 2018-08-21 2024-08-02 マイクロン テクノロジー，インク． 遷移金属ドープのゲルマニウム－アンチモン－テルル（ｇｓｔ）メモリデバイスコンポーネント及び相変化メモリ組成物
KR20200028774A (ko) * 2018-09-07 2020-03-17 한국과학기술연구원 4성분계 이상의 캘코제나이드 상변화 물질 및 이를 포함하는 메모리 소자
KR102118734B1 (ko) 2018-09-07 2020-06-09 한국과학기술연구원 4성분계 이상의 캘코제나이드 상변화 물질 및 이를 포함하는 메모리 소자

Also Published As

Publication number Publication date
JPWO2008142768A1 (ja) 2010-08-05
US20100171087A1 (en) 2010-07-08

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