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WO2008140083A1 - フォトレジスト現像液 - Google Patents

フォトレジスト現像液 Download PDF

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Publication number
WO2008140083A1
WO2008140083A1 PCT/JP2008/058774 JP2008058774W WO2008140083A1 WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1 JP 2008058774 W JP2008058774 W JP 2008058774W WO 2008140083 A1 WO2008140083 A1 WO 2008140083A1
Authority
WO
WIPO (PCT)
Prior art keywords
developing solution
mass
hydrogen atom
photoresist developing
integer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058774
Other languages
English (en)
French (fr)
Inventor
Seiji Tono
Yasutaka Natsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Priority to CN2008800123729A priority Critical patent/CN101657761B/zh
Priority to KR1020097020596A priority patent/KR101084454B1/ko
Publication of WO2008140083A1 publication Critical patent/WO2008140083A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

【課題】化学増幅型レジストよりなる厚膜レジストの現像に好適に使用できる現像液を提供する。 【解決手段】アニオン性界面活性剤、およびカチオン性界面活性剤を含む第四級アンモニウム化合物の水溶液よりなるフォトレジスト現像液であって、フォトレジスト現像液全体の質量を１００質量％として、下記式（１）で示されるアニオン性界面活性剤を０．１～５質量％、カチオン性界面活性剤を０．０１～２質量％含むことを特徴とするフォトレジスト現像液；（式中、Ｒ１は水素原子またはメチル基であり、Ｒ２は水素原子または炭素数１～４のアルキル基であり、Ａは炭素数１～４のアルキレン基であり、一分子中で、ＡＯは同一であっても、異なる２種以上の組み合わせであってもよく、ｐは１～３の整数であり、ｍは５～３０であり、Ｍは水素原子またはアンモニウムイオンである。）
PCT/JP2008/058774 2007-05-16 2008-05-13 フォトレジスト現像液 Ceased WO2008140083A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800123729A CN101657761B (zh) 2007-05-16 2008-05-13 光刻胶显影液
KR1020097020596A KR101084454B1 (ko) 2007-05-16 2008-05-13 포토레지스트 현상액

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007130157 2007-05-16
JP2007-130157 2007-05-16

Publications (1)

Publication Number Publication Date
WO2008140083A1 true WO2008140083A1 (ja) 2008-11-20

Family

ID=40002273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058774 Ceased WO2008140083A1 (ja) 2007-05-16 2008-05-13 フォトレジスト現像液

Country Status (5)

Country Link
JP (1) JP5052410B2 (ja)
KR (1) KR101084454B1 (ja)
CN (1) CN101657761B (ja)
TW (1) TWI401544B (ja)
WO (1) WO2008140083A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (zh) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 显影液组成物
WO2012127342A1 (en) * 2011-03-18 2012-09-27 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (ja) * 2016-12-08 2018-06-14 富士電機株式会社 半導体装置の製造方法
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI377451B (en) * 2008-12-08 2012-11-21 Everlight Chem Ind Corp Developer composition
CN101825848B (zh) * 2010-04-19 2011-11-23 张万诚 一种印刷用热敏阳图型感光版的显影液及其制备方法
KR101993360B1 (ko) 2012-08-08 2019-06-26 삼성전자주식회사 포토 리소그래피용 린스액
CN102929109A (zh) * 2012-11-15 2013-02-13 杭州格林达化学有限公司 一种负性光刻胶显影液及其应用
JP5728517B2 (ja) * 2013-04-02 2015-06-03 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の製造方法、パターン形成方法、及び、電子デバイスの製造方法
CN105589304B (zh) * 2016-03-04 2020-08-14 苏州晶瑞化学股份有限公司 一种光刻胶用显影液及其制备方法和应用
WO2017169834A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
CN111965958A (zh) * 2020-09-07 2020-11-20 苏州理硕科技有限公司 一种干膜光刻胶用显影液及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (en) * 1998-12-14 2000-06-22 Syngenta Participations Ag Pesticide formulations containing alkoxylated tristyrylphenol hemi-sulfate ester neutralized alkoxylated amine surfactants
JP2001228630A (ja) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd 感光性樹脂現像用現像液、画像形成方法、カラーフィルタの製造方法、カラーフィルタ付アクティブマトリックス基板の製造方法、及び液晶表示素子
JP2004117981A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 感光性平版印刷版用現像液
JP2004184648A (ja) * 2002-12-03 2004-07-02 Clariant (Japan) Kk リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002169299A (ja) * 2000-09-21 2002-06-14 Tokuyama Corp フォトレジスト現像液
TWI229245B (en) * 2002-02-27 2005-03-11 Chi Mei Corp A developer solution composition and process using the same
US20040002019A1 (en) * 2002-06-24 2004-01-01 Fuji Photo Film Co., Ltd. Method for Preparing Lithographic Printing Plate
JP4040539B2 (ja) * 2003-06-13 2008-01-30 東京応化工業株式会社 レジスト用現像液組成物およびレジストパターンの形成方法
KR100993516B1 (ko) * 2005-06-13 2010-11-10 가부시끼가이샤 도꾸야마 포토레지스트 현상액, 및 그 현상액을 사용한 기판의 제조방법
CN101253449A (zh) * 2005-08-30 2008-08-27 日立化成工业株式会社 感光性树脂组合物及感光性组件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5149982A (en) * 1974-10-24 1976-04-30 Sumitomo Chemical Co Senryono kochakuho
WO2000035863A1 (en) * 1998-12-14 2000-06-22 Syngenta Participations Ag Pesticide formulations containing alkoxylated tristyrylphenol hemi-sulfate ester neutralized alkoxylated amine surfactants
JP2001228630A (ja) * 2000-02-16 2001-08-24 Fuji Photo Film Co Ltd 感光性樹脂現像用現像液、画像形成方法、カラーフィルタの製造方法、カラーフィルタ付アクティブマトリックス基板の製造方法、及び液晶表示素子
JP2004117981A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 感光性平版印刷版用現像液
JP2004184648A (ja) * 2002-12-03 2004-07-02 Clariant (Japan) Kk リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101750908B (zh) * 2008-12-10 2012-01-11 明德国际仓储贸易(上海)有限公司 显影液组成物
WO2012127342A1 (en) * 2011-03-18 2012-09-27 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
US9184057B2 (en) 2011-03-18 2015-11-10 Basf Se Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2018105299A1 (ja) * 2016-12-08 2018-06-14 富士電機株式会社 半導体装置の製造方法
JPWO2018105299A1 (ja) * 2016-12-08 2019-04-04 富士電機株式会社 半導体装置の製造方法
US10629441B2 (en) 2016-12-08 2020-04-21 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device
US10867798B2 (en) 2016-12-08 2020-12-15 Fuji Electric Co., Ltd. Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN101657761A (zh) 2010-02-24
CN101657761B (zh) 2012-07-04
TW200915020A (en) 2009-04-01
KR101084454B1 (ko) 2011-11-21
TWI401544B (zh) 2013-07-11
JP2008310315A (ja) 2008-12-25
KR20100014740A (ko) 2010-02-10
JP5052410B2 (ja) 2012-10-17

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