WO2008018340A1 - Optical component - Google Patents
Optical component Download PDFInfo
- Publication number
- WO2008018340A1 WO2008018340A1 PCT/JP2007/065064 JP2007065064W WO2008018340A1 WO 2008018340 A1 WO2008018340 A1 WO 2008018340A1 JP 2007065064 W JP2007065064 W JP 2007065064W WO 2008018340 A1 WO2008018340 A1 WO 2008018340A1
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- WO
- WIPO (PCT)
- Prior art keywords
- optical component
- layer
- conductive material
- refractive index
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
- G02B1/116—Multilayers including electrically conducting layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/121—Protecting the head, e.g. against dust or impact with the record carrier
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/135—Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
- G11B7/1372—Lenses
- G11B7/1374—Objective lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
Definitions
- the present invention relates to an optical component having antifouling properties.
- a water repellent coating that imparts water repellency to the surface of the optical component to facilitate removal of dirt, and an optical component.
- Antifouling coats are provided to prevent electrostatic charge and prevent dust from adhering to the surface.
- such an antifouling coat is designed to function as an antireflection film, and has a conductive material layer made of a conductive material in the first layer, the third layer, etc. from the surface side (for example, And Patent Documents 1 and 2).
- Patent Document 1 Japanese Patent Application Laid-Open No. 59-90801
- Patent Document 2 Japanese Patent Publication No. 53-28214
- those having a conductive material layer as the first layer from the surface side can prevent the adhesion of dirt, but when wiping the surface of optical components, etc.
- the surface of the layer that is, the surface of the optical component is likely to be damaged.
- the conductive material layer is deposited at a low substrate temperature of 120 ° C or lower, so the strength of the antifouling coating is reduced and wiping occurs. It becomes easy.
- those having a conductive material layer as the third layer from the surface side have two non-conductive layers formed on the surface side of the conductive material layer.
- the conductivity on the surface of the optical component becomes low, and sufficient antistatic performance to prevent the adhesion of dirt cannot be obtained.
- An object of the present invention is to prevent the adhesion of dirt and the occurrence of wiping. It is to provide an optical component that can be used.
- the invention described in claim 1 is an optical component comprising a base material and an antireflection film provided on the surface of the base material, wherein the antireflection film is a material having conductivity. And a distance between the surface of the conductive material layer and the surface of the optical component is 4 to 20 nm.
- the antireflection film has a conductive material layer, and the distance between the surface of the conductive material layer and the surface of the optical component is 4 to 20 nm, Unlike the case where the surface of the conductive material layer is located on the surface of the optical component, it is possible to prevent the surface from being wiped even when the surface of the optical component is wiped. In addition, the conductivity on the surface of the optical component is reliably maintained to prevent electrification, so that the adhesion of dirt can be prevented.
- the optical component may be any product (component) that is normally used as an optical element such as a lens, a prism, or a filter.
- the invention according to claim 2 is the optical component according to claim 1, wherein the surface resistance value of the optical component is less than 10 5 ⁇ / mouth. .
- mouth in the unit of the surface resistance value means square.
- the invention of claim 3 is an optical component comprising a base material and an antireflection film provided on the surface of the base material, wherein the antireflection film is a material having conductivity.
- the conductive material layer is formed on the inner side of the surface of the optical component, and the surface resistance value of the optical component is less than 10 5 ⁇ / mouth.
- the antireflection film since the antireflection film has the conductive material layer on the inner side of the surface of the optical component, the surface of the conductive material layer is located on the surface of the optical component. In contrast, when the surface of an optical component is wiped, it is possible to prevent wiping from occurring on the surface. In addition, since the surface resistance of optical components is less than 10 5 ⁇ / mouth, As a result, the electrical conductivity on the surface of the optical component is reliably maintained to prevent electrification.
- the invention described in claim 4 is the optical component according to any one of claims 1 to 3, wherein the thickness of the conductive material layer is 325 nm. Characterized by
- the thickness of the conductive material layer is 325 nm, it is possible to more reliably prevent charging on the surface of the optical component and prevent adhesion of dirt.
- the invention according to claim 5 is the optical component according to claim 4, characterized in that the thickness of the conductive material layer is 318 nm.
- the thickness of the conductive material layer is 318 nm, it is possible to more reliably prevent charging on the surface of the optical component and prevent adhesion of dirt.
- the invention according to claim 6 is the optical component according to any one of claims 1 to 5, wherein the conductive material is used for light having a wavelength of 600 nm. It is a high refractive index material having a refractive index of 1.55 or more.
- the refractive index is 1.8 or more with respect to light having a wavelength of 600 nm.
- the invention according to claim 7 is the optical component according to claim 6, wherein the high refractive index material contains an indium oxide-based or zinc oxide-based mixed material. It is characterized by.
- the indium oxide-based mixed material is a mixed material containing at least indium oxide, for example, a material mainly composed of a mixed material of indium oxide and tin.
- the zinc oxide-based mixed material is a mixed material containing at least zinc oxide, for example, a material mainly composed of a mixed material of zinc oxide and gallium.
- "containing" may be included as one component or may be included as all components. That is, other components may or may not be included.
- the invention according to claim 8 is the optical component according to any one of claims 1 to 7, wherein the antireflection film is more optical than the conductive material layer.
- a low-refractive index layer made of a low-refractive index material having a refractive index of less than 1.55 with respect to light having a wavelength of 600 nm is provided on the surface side of the component.
- the antireflection film since the antireflection film has the low refractive index layer on the surface side of the optical component with respect to the conductive material layer, the reflection of the optical component is performed by the low refractive index layer.
- the prevention function can be improved.
- the invention according to claim 9 is the optical component according to claim 8, characterized in that the thickness of the low refractive index layer is 4 to 20 nm.
- the invention according to claim 10 is the optical component according to claim 8 or 9, wherein the low refractive index layer is located on the surface of the optical component.
- the invention according to claim 11 is the optical component according to claim 8 or 9, wherein the optical component has a water repellent coating on the surface side of the optical component with respect to the low refractive index layer. It is characterized by this.
- the invention according to claim 12 is the optical component according to any one of claims 8 to 11, wherein the low refractive index material is silicon oxide or silicon oxide and Any one of the mixed materials of aluminum oxide is contained.
- the invention according to claim 13 is the optical component according to any one of claims 1 to 12, wherein the base material is formed of a polymer resin. It is characterized by.
- the force S can be prevented to prevent wiping from occurring on the surface of the optical component. Further, it is possible to prevent the adhesion of dirt.
- FIG. 1 is a diagram showing an example of an optical component 1 according to the present invention, in which FIG. (A) is a schematic configuration diagram, and FIG. (B) is a partially enlarged view of a circle X in FIG. .
- FIG. 2 is a graph showing the reflectance characteristics of optical components of Example (3) and Comparative Example (1).
- FIG. 3 is a graph showing the reflectance characteristics of optical components of Example (12) and Comparative Example (7).
- FIG. 4 is a graph showing the reflectance characteristics of optical components of Example (15) and Comparative Example (8).
- FIG. 5 is a graph showing the reflectance characteristics of the optical parts of Example (16) and Comparative Example (9).
- FIG. 6 is a diagram for explaining a method for measuring a surface resistance value.
- FIG. 1 is a diagram showing an example of an optical component 1 according to the present invention
- FIG. 1 (a) is a schematic configuration diagram
- Fig. 1 (b) is a partially enlarged view of circle X in Fig. 1 (a).
- the optical component 1 is used, for example, as an objective lens of an optical pick-up device in an in-vehicle DVD device, and includes a base material 2.
- the substrate 2 has a curved optical surface in the present embodiment.
- the optical surface of the optical component 1 may be a flat surface or may have a fine structure such as a diffraction structure.
- the substrate 2 is made of a polymer resin.
- the polymer resin is not particularly limited as long as it is a transparent resin material generally used as an optical material.
- acrylic resin, polyolefin resin, and polycarbonate resin are used.
- the polyolefin resin ZEONEX (manufactured by Nippon Zeon Co., Ltd.) that is a cyclic polyolefin resin, and apell (manufactured by Mitsui Chemicals, Inc.) are suitable.
- ZEONEX330R product name
- APL5014DP product name
- lapels lapels.
- the polymer resin is not limited to these.
- An antireflection film 3 is provided on the surface of the substrate 2.
- the antireflection film 3 may be provided on the light source side of the optical pickup device with respect to the substrate 2 or may be provided on the information recording medium side such as a DVD! /. It can be provided on both sides!
- This antireflection film 3 is a film having an antireflection function, and is composed of n layers (n is a natural number of, for example, 4 to 7) M,.
- the thickness of the outermost n-th layer M is 4 to 20 nm, more than the n-th layer M.
- the inner (n-1) layer M- has a thickness of 3 to 25 nm, preferably 3 to 18 nm.
- the surface of the (n-1) layer M- is located at a depth of 4 to 20 nm from the surface of the optical component 1.
- the nth layer M may be located on the outermost surface of the optical component 1 or may be located on the inner side of the water repellent coat (not shown).
- a water repellent coating is provided on the outside of the antireflection film 3, it is possible to facilitate removal of dirt attached to the surface of the optical component 1.
- a water-repellent coat is a perfluoroalkyl silane such as SubstanceWRlPatinal (trade name, Merck It is possible to form S as a material.
- the (n-2) layer M and the nth layer M of the antireflection film 3 are made of a low refractive index material, and the (n-1) layer M has a high conductivity.
- a conductive material layer is formed from a refractive index material.
- the low refractive index material a material containing any one of silicon oxide or a mixed material of silicon oxide and aluminum oxide can be used.
- a mixed material for example, SubstanceL5 (trade name, manufactured by Merck Japan Ltd.) is suitable.
- the material mixed with silicon oxide is not limited to aluminum oxide.
- the high refractive index material having conductivity a material containing an indium oxide-based zinc oxide-based mixed material, specifically, a mixed material of indium oxide and tin (ITO), zinc oxide, A material containing a mixed material of gallium and gallium can be used. It is preferable that the mixing ratio of tin in the mixed material of indium oxide and tin is 3 to 10 wt%.
- the material mixed with indium oxide and zinc oxide is not limited to tin and gallium.
- the materials and thicknesses of the first layer M to the (n-3) layer M in the antireflection film 3 are as follows.
- the antireflection film 3 has an antireflection function as a whole, it can be arbitrarily designed.
- the optical component 1 described above can be manufactured by a conventionally known manufacturing method.
- the antireflection film 3 of the optical component 1 and the water-repellent coating can be formed by a vacuum deposition method, a snowflake method, a CVD method, or the like.
- the antireflection film 3 has the (n-1) layer M, that is, the surface of the conductive material layer on the inside, and the conductive material layer and the surface of the optical component 1 Unlike the case where the surface of the conductive material layer is located on the surface of the optical component 1, the surface force of the optical component 1 is prevented from being wiped off even when the surface of the optical component 1 is wiped. can do.
- the antireflection film 3 has the nth layer M, that is, a low refractive index layer on the surface side of the optical component 1 relative to the conductive material layer, the antireflective function of the optical component 1 is provided by the low refractive index layer. Improve the power with S.
- the optical component 1 has been described as a single ball optical element, but may be a multiple ball optical element.
- antireflection films and water repellents having the layer structures shown in Tables 1 to 7 below are used. A coating provided on the optical surface of the substrate 2 was formed.
- Examples (1) to (; 11) and Comparative Examples (1) to (6) correspond to two-wavelength light beams used for DVD and CD recording / reproduction.
- Examples (12) to (; 14) and Comparative Example (7) correspond to a single wavelength light beam used for recording / reproducing BD (Blu-ray Disc).
- Examples (15) to (; 16) and Comparative Examples (8) to (9) correspond to three-wavelength light beams used for recording / reproducing BD, DVD and CD.
- the “L5” material indicates the above-mentioned “Substance L5”! /.
- Example (1) Example (2)
- Example (3) Example (4) Substrate Abel Resin Apel Resin Abel Resin Abel Resin
- Example (11) Example (12) Example (13) Base material ZEONEX resin Abel resin Apel resin
- Example (15) Base Material ZEONEX Resin Abel Resin ZEONEX Resin
- the shortest wavelength indicating the minimum reflectance in the spectral reflectance characteristic of LOOOnm the wavelength is 350-; the wavelength is ⁇ (nm), and the reflectance corresponding to this wavelength ⁇ is Rminl (%). Short, When the wavelength is ⁇ (nm) and the reflectance corresponding to this wavelength ⁇ is Rmin2 (%), each light
- the minimum reflectances Rminl and Rmin2 for the school parts are as shown in the bottom column of Table 1 to Table 7 above.
- the spectral reflectance characteristics of each optical component are, for example, “Graph 1” in FIG. 2 in Example (3), “Graph 2” in FIG. 2 in Comparative Example (1), and FIG. 3 in Example (12).
- the wavelength ⁇ 1 of the minimum reflectance is 750 ⁇ 20 nm, and the reflectance Rminl of the wavelength ⁇ 1 is less than 0.7%.
- Wavelength ⁇ is 750 ⁇ 20 nm
- reflectivity Rminl is 0.7% or more and less than 1%. No practical problems in recording and playback.
- the wavelength ⁇ 1 of the minimum reflectance is 405 ⁇ 20 nm, and the reflectance Rminl of the wavelength ⁇ 1 is less than 0.7%. There is no practical problem in recording and playback.
- the wavelength ⁇ 1 of the minimum reflectance is 405 ⁇ 20 nm, and the reflectance Rminl of the wavelength ⁇ 1 is less than 0.7%. Furthermore, the wavelength 2 of the minimum reflectance is 700 ⁇ 50 nm, and the reflectance Rmin2 of the wavelength 2 is less than 0.7%. There is no practical problem in recording and playback.
- Measurement sample (1) Disc-shaped plastic test piece with a diameter of 30 mm and a thickness of 3 mm
- Measurement sample (2) Optical component of the target shape
- the antireflection film and the water repellent coating of these measurement samples (1) and (2) were formed under the same conditions by an antireflection film forming apparatus using a vacuum deposition method, a sputtering method, a CVD method, or the like.
- the measurement sample (1) was prepared only for Example (1), and the measurement sample (2) was prepared for each of Examples (1) to (; 16) and Comparative Examples (1) to (9). I made it! (Measurement and calculation method)
- Step 1 Calculation of surface resistance value conversion coefficient Rso / R
- the surface resistance value R so (unit: M ⁇ / port) of the optical surface having the antireflection film was measured with the ultra-insulation meter.
- electrodes 5a and 5b are formed on the optical surface coated with the antireflection film with a conductive paint such as a silver paste agent, and the electrodes
- the resistance value R (unit: M ⁇ ) between 5a and 5b was measured with the ultra-insulation meter 6.
- step 1 was performed only for the example (1).
- the luminous flux transmittance at a wavelength of 650 nm was measured in Examples (1) to (; 11) and Comparative Examples (1) to (6).
- Comparative Examples (7) to (9) the luminous transmittance at a wavelength of 405 nm was measured using the measurement sample (2).
- the same conditions were applied. The transmittance was measured.
- ⁇ The transmittance decrease after standing is less than 1%.
- ⁇ Decrease in transmittance after standing is from 1% to less than 2%.
- the transmittance decrease after standing is 2% or more.
- the surface of the measurement sample (2) was wiped with a cotton swab soaked with isopropyl alcohol, and the number of times of wiping until the antireflection film or water repellent coat on the surface was peeled was measured.
- the wiping load was between 5 and 10 g.
- the measurement was performed on a portion having no uneven shape such as a diffractive structure.
- ⁇ Less than 10 times, the outermost antireflection film and water repellent coating are not peeled off, and less than 50 times.
- X The outermost antireflection film and water-repellent coating peel off in less than 10 times.
- the thickness of the conductive material layer ((n-1) layer) is 3 nm or more and 25 nm or less, and the distance between the surface of the conductive material layer and the outermost surface of the optical component is 4 nm or more and 20 nm.
- the overall evaluation was ⁇ level or higher, and it was found that there was no practical problem.
- the film strength may become a ⁇ level as shown in Examples (7), (11) and Comparative Example (6). I understood. This is presumably because the conductive material layer has lower film strength, such as hardness, denseness, and abrasion resistance, compared to the metal oxide or silicon oxide layer.
- the conductive material layer has lower film strength, such as hardness, denseness, and abrasion resistance, compared to the metal oxide or silicon oxide layer.
- the base material temperature cannot be maintained higher than when the conductive material layer is formed on the glass base material and the film strength of the conductive material layer is low. Therefore, if the thickness of the conductive material layer is increased, the film strength of the entire antireflection film is unlikely to be good even if a layer such as silicon oxide is provided on the surface side.
- the thickness of the conductive material layer is less than 3 nm, the surface resistance value increases, and the resistance value fluctuates greatly depending on the deposition conditions, resulting in a decrease in antistatic performance and antifouling performance. (See Comparative Example (5)).
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Abstract
Description
明 細 書 Specification
光学部品 Optical components
技術分野 Technical field
[0001] 本発明は、防汚性を有する光学部品に関する。 [0001] The present invention relates to an optical component having antifouling properties.
背景技術 Background art
[0002] 従来、光ピックアップ装置等に用いられる光学部品には、光学性能を維持する観点 から、光学部品の表面に撥水性を付与して汚れの除去を容易化する撥水コートや、 光学部品表面の帯電を防止して静電気による粉塵の付着を防止する防汚コート等が 設けられている。また、このような防汚コートは、反射防止膜としても機能するようにな つており、導電性物質からなる導電材料層を表面側から 1層目や 3層目などに有して いる(例えば、特許文献 1 , 2参照)。 [0002] Conventionally, from the viewpoint of maintaining optical performance, a water repellent coating that imparts water repellency to the surface of the optical component to facilitate removal of dirt, and an optical component. Antifouling coats are provided to prevent electrostatic charge and prevent dust from adhering to the surface. In addition, such an antifouling coat is designed to function as an antireflection film, and has a conductive material layer made of a conductive material in the first layer, the third layer, etc. from the surface side (for example, And Patent Documents 1 and 2).
特許文献 1 :特開昭 59— 90801号公報 Patent Document 1: Japanese Patent Application Laid-Open No. 59-90801
特許文献 2 :特公昭 53— 28214号公報 Patent Document 2: Japanese Patent Publication No. 53-28214
発明の開示 Disclosure of the invention
発明が解決しょうとする課題 Problems to be solved by the invention
[0003] しかしながら、上記の撥水コートでは、付着した汚れは容易に除去できるものの、付 着自体を防止することはできなレ、。 [0003] However, with the above water-repellent coat, the attached dirt can be easily removed, but the adhesion itself cannot be prevented.
[0004] 一方、上記の防汚コートのうち、表面側から 1層目に導電材料層を有するものでは 、汚れの付着を防止することはできるものの、光学部品の表面を拭く場合などに導電 材料層の表面、つまり光学部品の表面に傷が発生しやすい。特に、光学部品の本体 が高分子樹脂製である場合には、導電材料層が 120°C以下の低い基板温度で成膜 されるため、防汚コートの強度が低くなり、拭き傷が発生しやすくなる。 [0004] On the other hand, among the above antifouling coats, those having a conductive material layer as the first layer from the surface side can prevent the adhesion of dirt, but when wiping the surface of optical components, etc. The surface of the layer, that is, the surface of the optical component is likely to be damaged. In particular, when the optical component body is made of a polymer resin, the conductive material layer is deposited at a low substrate temperature of 120 ° C or lower, so the strength of the antifouling coating is reduced and wiping occurs. It becomes easy.
[0005] また、上記の防汚コートのうち、表面側から 3層目に導電材料層を有するものでは、 導電材料層よりも表面側に 2層の非導電性層が形成されているため、光学部品表面 での導電性が低くなつてしまい、汚れの付着を防止するための十分な帯電防止性能 が得られない場合がある。 [0005] Of the above antifouling coats, those having a conductive material layer as the third layer from the surface side have two non-conductive layers formed on the surface side of the conductive material layer. In some cases, the conductivity on the surface of the optical component becomes low, and sufficient antistatic performance to prevent the adhesion of dirt cannot be obtained.
[0006] 本発明の課題は、汚れの付着を防止するとともに、拭き傷の発生を防止することが できる光学部品を提供することである。 [0006] An object of the present invention is to prevent the adhesion of dirt and the occurrence of wiping. It is to provide an optical component that can be used.
課題を解決するための手段 Means for solving the problem
[0007] 請求の範囲第 1項記載の発明は、基材と、当該基材の表面に設けられた反射防止 膜とを備える光学部品であって、前記反射防止膜は、導電性を有する材料からなる 導電材料層を有し、この導電材料層の表面と、当該光学部品の表面との距離は 4〜 20nmであることを特徴とする。 The invention described in claim 1 is an optical component comprising a base material and an antireflection film provided on the surface of the base material, wherein the antireflection film is a material having conductivity. And a distance between the surface of the conductive material layer and the surface of the optical component is 4 to 20 nm.
[0008] 請求の範囲第 1項記載の発明によれば、反射防止膜は導電材料層を有し、当該導 電材料層の表面と光学部品の表面との距離は 4〜20nmであるので、導電材料層の 表面が光学部品の表面に位置する場合と異なり、光学部品の表面を拭いた場合にも 当該表面に拭き傷が発生するのを防止することができる。また、光学部品表面での導 電性が確実に維持されて帯電を防止する結果、汚れの付着を防止することができる [0008] According to the invention of claim 1, since the antireflection film has a conductive material layer, and the distance between the surface of the conductive material layer and the surface of the optical component is 4 to 20 nm, Unlike the case where the surface of the conductive material layer is located on the surface of the optical component, it is possible to prevent the surface from being wiped even when the surface of the optical component is wiped. In addition, the conductivity on the surface of the optical component is reliably maintained to prevent electrification, so that the adhesion of dirt can be prevented.
〇 Yes
[0009] なお、光学部品とは、通常レンズやプリズム、フィルタ一等の光学素子として使用さ れる製品(部品)の何れであっても良い。 [0009] The optical component may be any product (component) that is normally used as an optical element such as a lens, a prism, or a filter.
[0010] 請求の範囲第 2項記載の発明は、請求の範囲第 1項記載の光学部品において、当 該光学部品の表面抵抗値が、 105Μ Ω /口未満であることを特徴とする。 [0010] The invention according to claim 2 is the optical component according to claim 1, wherein the surface resistance value of the optical component is less than 10 5 Ω / mouth. .
[0011] 請求の範囲第 2項記載の発明によれば、光学部品の表面抵抗値が 105Μ Ω /口 未満であるので、より確実に光学部品表面での帯電を防止し、汚れの付着を防止す ること力 Sでさる。 [0011] According to the invention described in claim 2, since the surface resistance value of the optical component is less than 10 5 Ω / port, the surface of the optical component can be more reliably prevented from being charged and dirt can be adhered. Use force S to prevent
[0012] なお、表面抵抗値の単位中の「口」は、スクウェアの意である。 It should be noted that “mouth” in the unit of the surface resistance value means square.
[0013] 請求の範囲第 3項記載の発明は、基材と、当該基材の表面に設けられた反射防止 膜とを備える光学部品であって、前記反射防止膜は、導電性を有する材料からなる 導電材料層を、当該光学部品の表面よりも内側に有し、当該光学部品の表面抵抗 値力 105Μ Ω /口未満であることを特徴とする。 [0013] The invention of claim 3 is an optical component comprising a base material and an antireflection film provided on the surface of the base material, wherein the antireflection film is a material having conductivity. The conductive material layer is formed on the inner side of the surface of the optical component, and the surface resistance value of the optical component is less than 10 5 Ω / mouth.
[0014] 請求の範囲第 3項記載の発明によれば、反射防止膜は導電材料層を光学部品の 表面よりも内側に有するので、導電材料層の表面が光学部品の表面に位置する場 合と異なり、光学部品の表面を拭いた場合にも当該表面に拭き傷が発生するのを防 止すること力できる。また、光学部品の表面抵抗値が 105Μ Ω /口未満であるので、 光学部品表面での導電性が確実に維持されて帯電を防止する結果、汚れの付着を 防止すること力でさる。 [0014] According to the invention of claim 3, since the antireflection film has the conductive material layer on the inner side of the surface of the optical component, the surface of the conductive material layer is located on the surface of the optical component. In contrast, when the surface of an optical component is wiped, it is possible to prevent wiping from occurring on the surface. In addition, since the surface resistance of optical components is less than 10 5 Ω / mouth, As a result, the electrical conductivity on the surface of the optical component is reliably maintained to prevent electrification.
[0015] 請求の範囲第 4項記載の発明は、請求の範囲第 1項〜第 3項の何れか一項に記載 の光学部品において、前記導電材料層の厚さは、 3 25nmであることを特徴とする [0015] The invention described in claim 4 is the optical component according to any one of claims 1 to 3, wherein the thickness of the conductive material layer is 325 nm. Characterized by
[0016] 請求の範囲第 4項記載の発明によれば、導電材料層の厚さは 3 25nmであるの で、より確実に光学部品表面での帯電を防止し、汚れの付着を防止することができる According to the invention described in claim 4, since the thickness of the conductive material layer is 325 nm, it is possible to more reliably prevent charging on the surface of the optical component and prevent adhesion of dirt. Can
[0017] 請求の範囲第 5項記載の発明は、請求の範囲第 4項記載の光学部品において、前 記導電材料層の厚さは、 3 18nmであることを特徴とする。 [0017] The invention according to claim 5 is the optical component according to claim 4, characterized in that the thickness of the conductive material layer is 318 nm.
[0018] 請求の範囲第 5項記載の発明によれば、導電材料層の厚さは 3 18nmであるの で、より確実に光学部品表面での帯電を防止し、汚れの付着を防止することができる [0018] According to the invention described in claim 5, since the thickness of the conductive material layer is 318 nm, it is possible to more reliably prevent charging on the surface of the optical component and prevent adhesion of dirt. Can
[0019] 請求の範囲第 6項記載の発明は、請求の範囲第 1項〜第 5項の何れか一項に記載 の光学部品において、前記導電性を有する材料は、波長 600nmの光に対して屈折 率が 1. 55以上の高屈折率材料であることを特徴とする。 [0019] The invention according to claim 6 is the optical component according to any one of claims 1 to 5, wherein the conductive material is used for light having a wavelength of 600 nm. It is a high refractive index material having a refractive index of 1.55 or more.
[0020] 請求の範囲第 6項記載の発明によれば、請求の範囲第 1項〜第 5項の何れか一項 に記載の発明と同様の効果を得ることができる。 [0020] According to the invention described in claim 6, it is possible to obtain the same effect as the invention described in any one of claims 1 to 5.
[0021] なお、波長 600nmの光に対して屈折率が 1. 8以上であれば、より好ましい。 [0021] It is more preferable that the refractive index is 1.8 or more with respect to light having a wavelength of 600 nm.
[0022] 請求の範囲第 7項記載の発明は、請求の範囲第 6項記載の光学部品において、前 記高屈折率材料は、酸化インジ ム系または酸化亜鉛系の混合材料を含有するこ とを特徴とする。 [0022] The invention according to claim 7 is the optical component according to claim 6, wherein the high refractive index material contains an indium oxide-based or zinc oxide-based mixed material. It is characterized by.
[0023] 請求の範囲第 7項記載の発明によれば、請求の範囲第 6項記載の発明と同様の効 果を得ること力 Sでさる。 [0023] According to the invention described in claim 7, the force S is obtained to obtain the same effect as that of the invention described in claim 6.
[0024] なお、酸化インジ ム系の混合材料とは、少なくとも酸化インジ ムを含む混合 材料であり、例えば酸化インジ ムとスズとの混合材料を主成分とする材料である。 また、酸化亜鉛系の混合材料とは、少なくとも酸化亜鉛を含む混合材料であり、例え ば酸化亜鉛とガリウムとの混合材料を主成分とする材料である。 [0025] また、含有するとは、一成分として含んでいても良いし、全成分として含んでいても 良い。つまり、他の成分を含んでいても良いし、含んでいなくても良い。 [0024] Note that the indium oxide-based mixed material is a mixed material containing at least indium oxide, for example, a material mainly composed of a mixed material of indium oxide and tin. The zinc oxide-based mixed material is a mixed material containing at least zinc oxide, for example, a material mainly composed of a mixed material of zinc oxide and gallium. [0025] In addition, "containing" may be included as one component or may be included as all components. That is, other components may or may not be included.
[0026] 請求の範囲第 8項記載の発明は、請求の範囲第 1項〜第 7項の何れか一項に記載 の光学部品において、前記反射防止膜は、前記導電材料層よりも当該光学部品の 表面側に、波長 600nmの光に対して屈折率が 1. 55未満の低屈折率材料からなる 低屈折率層を有することを特徴とする。 [0026] The invention according to claim 8 is the optical component according to any one of claims 1 to 7, wherein the antireflection film is more optical than the conductive material layer. A low-refractive index layer made of a low-refractive index material having a refractive index of less than 1.55 with respect to light having a wavelength of 600 nm is provided on the surface side of the component.
[0027] 請求の範囲第 8項記載の発明によれば、反射防止膜は導電材料層よりも光学部品 の表面側に低屈折率層を有するので、当該低屈折率層によって、光学部品の反射 防止機能を向上させることができる。 [0027] According to the invention of claim 8, since the antireflection film has the low refractive index layer on the surface side of the optical component with respect to the conductive material layer, the reflection of the optical component is performed by the low refractive index layer. The prevention function can be improved.
[0028] 請求の範囲第 9項記載の発明は、請求の範囲第 8項記載の光学部品において、前 記低屈折率層の厚さは、 4〜20nmであることを特徴とする。 [0028] The invention according to claim 9 is the optical component according to claim 8, characterized in that the thickness of the low refractive index layer is 4 to 20 nm.
[0029] 請求の範囲第 9項記載の発明によれば、請求の範囲第 8項記載の発明と同様の効 果を得ること力 Sでさる。 [0029] According to the invention described in claim 9, the force S is obtained to obtain the same effect as that of the invention described in claim 8.
[0030] 請求の範囲第 10項記載の発明は、請求の範囲第 8項または第 9項記載の光学部 品において、前記低屈折率層は、当該光学部品の表面に位置することを特徴とする [0030] The invention according to claim 10 is the optical component according to claim 8 or 9, wherein the low refractive index layer is located on the surface of the optical component. Do
〇 Yes
[0031] 請求の範囲第 10項記載の発明によれば、請求の範囲第 8項または第 9項記載の 発明と同様の効果を得ることができる。 [0031] According to the invention of claim 10, the same effect as that of the invention of claim 8 or 9 can be obtained.
[0032] 請求の範囲第 11項記載の発明は、請求の範囲第 8項または第 9項記載の光学部 品において、前記低屈折率層よりも当該光学部品の表面側に撥水コートを有するこ とを特徴とする。 [0032] The invention according to claim 11 is the optical component according to claim 8 or 9, wherein the optical component has a water repellent coating on the surface side of the optical component with respect to the low refractive index layer. It is characterized by this.
[0033] 請求の範囲第 11項記載の発明によれば、低屈折率層よりも当該光学部品の表面 側に撥水コートを有するので、光学部品の表面に付着した汚れの除去を容易化する こと力 Sでさる。 [0033] According to the invention of claim 11, since the water-repellent coat is provided on the surface side of the optical component relative to the low refractive index layer, it is easy to remove dirt adhered to the surface of the optical component. That's the power S.
[0034] 請求の範囲第 12項記載の発明は、請求の範囲第 8項〜第 11項の何れか一項に 記載の光学部品において、前記低屈折率材料は、酸化シリコンまたは、酸化シリコン 及び酸化アルミニウムの混合材料の何れか一方を含有することを特徴とする。 [0034] The invention according to claim 12 is the optical component according to any one of claims 8 to 11, wherein the low refractive index material is silicon oxide or silicon oxide and Any one of the mixed materials of aluminum oxide is contained.
[0035] 請求の範囲第 12項記載の発明によれば、請求の範囲第 8項〜第 11項の何れか一 項に記載の発明と同様の効果を得ることができる。 [0035] According to the invention of claim 12, any one of claims 8 to 11 is provided. The same effect as the invention described in the item can be obtained.
[0036] 請求の範囲第 13項記載の発明は、請求の範囲第 1項〜第 12項の何れか一項に 記載の光学部品において、前記基材は、高分子樹脂から形成されていることを特徴 とする。 [0036] The invention according to claim 13 is the optical component according to any one of claims 1 to 12, wherein the base material is formed of a polymer resin. It is characterized by.
[0037] 請求の範囲第 13項記載の発明によれば、請求の範囲第 1項〜第 12項の何れか一 項に記載の発明と同様の効果を得ることができる。 [0037] According to the invention described in claim 13, the same effect as that of any one of claims 1 to 12 can be obtained.
発明の効果 The invention's effect
[0038] 請求の範囲第 1項記載の発明によれば、光学部品の表面に拭き傷が発生するのを 防止すること力 Sできる。また、汚れの付着を防止することができる。 [0038] According to the invention described in claim 1, the force S can be prevented to prevent wiping from occurring on the surface of the optical component. Further, it is possible to prevent the adhesion of dirt.
[0039] 請求の範囲第 2項記載の発明によれば、請求の範囲第 1項記載の発明と同様の効 果を得ること力 Sできるのは勿論のこと、より確実に汚れの付着を防止することができる [0039] According to the invention described in claim 2, the ability to obtain the same effect as that of the invention described in claim 1 can be obtained. can do
[0040] 請求の範囲第 3項記載の発明によれば、光学部品の表面に拭き傷が発生するのを 防止すること力 Sできる。また、汚れの付着を防止することができる。 [0040] According to the invention of claim 3, it is possible to prevent the occurrence of wiping on the surface of the optical component. Further, it is possible to prevent the adhesion of dirt.
[0041] 請求の範囲第 4項記載の発明によれば、請求の範囲第 1項〜第 3項の何れか一項 に記載の発明と同様の効果を得ることができるのは勿論のこと、より確実に汚れの付 着を防止することができる。 [0041] According to the invention described in claim 4, it is possible to obtain the same effect as the invention described in any one of claims 1 to 3. It is possible to prevent the adhesion of dirt more reliably.
[0042] 請求の範囲第 5項記載の発明によれば、請求の範囲第 4項記載の発明と同様の効 果を得ること力 Sできるのは勿論のこと、より確実に汚れの付着を防止することができる [0042] According to the invention described in claim 5, it is possible to obtain the same effect as that of the invention described in claim 4. can do
[0043] 請求の範囲第 6項記載の発明によれば、請求の範囲第 1項〜第 5項の何れか一項 に記載の発明と同様の効果を得ることができる。 [0043] According to the invention described in claim 6, it is possible to obtain the same effect as the invention described in any one of claims 1 to 5.
[0044] 請求の範囲第 7項記載の発明によれば、請求の範囲第 6項記載の発明と同様の効 果を得ること力 Sでさる。 [0044] According to the invention described in claim 7, the force S is obtained to obtain the same effect as that of the invention described in claim 6.
[0045] 請求の範囲第 8項記載の発明によれば、請求の範囲第 1項〜第 7項の何れか一項 に記載の発明と同様の効果を得ることができるのは勿論のこと、光学部品の反射防 止機能を向上させることができる。 [0045] According to the invention as set forth in claim 8, it is possible to obtain the same effects as those of the invention as set forth in any one of claims 1 to 7. The antireflection function of the optical component can be improved.
[0046] 請求の範囲第 9項記載の発明によれば、請求の範囲第 8項記載の発明と同様の効 果を得ること力 Sでさる。 [0046] According to the invention of claim 9, the same effect as that of the invention of claim 8 is achieved. Ability to get fruit with S
[0047] 請求の範囲第 10項記載の発明によれば、請求の範囲第 8項または第 9項記載の 発明と同様の効果を得ることができる。 [0047] According to the invention described in claim 10, the same effect as that of the invention described in claim 8 or 9 can be obtained.
[0048] 請求の範囲第 11項記載の発明によれば、請求の範囲第 8項または第 9項記載の 発明と同様の効果を得ることができるのは勿論のこと、光学部品の表面に付着した汚 れの除去を容易化することができる。 [0048] According to the invention as set forth in claim 11, it is possible to obtain the same effect as that of the invention as set forth in claim 8 or 9, and of course, adhere to the surface of the optical component. It is possible to facilitate the removal of soiling.
[0049] 請求の範囲第 12項記載の発明によれば、請求の範囲第 8項〜第 11項の何れか一 項に記載の発明と同様の効果を得ることができる。 [0049] According to the invention described in claim 12, it is possible to obtain the same effect as that of the invention described in any one of claims 8-11.
[0050] 請求の範囲第 13項記載の発明によれば、請求の範囲第 1項〜第 12項の何れか一 項に記載の発明と同様の効果を得ることができる。 [0050] According to the invention as set forth in claim 13, the same effects as those of the invention as set forth in any one of claims 1 to 12 can be obtained.
図面の簡単な説明 Brief Description of Drawings
[0051] [図 1]本発明に係る光学部品 1の一例を示す図であり、図(a)は概略構成図、図(b) は図(a)における円形 X内の部分拡大図である。 FIG. 1 is a diagram showing an example of an optical component 1 according to the present invention, in which FIG. (A) is a schematic configuration diagram, and FIG. (B) is a partially enlarged view of a circle X in FIG. .
[図 2]実施例(3) ,比較例(1)の光学部品の反射率特性を示す図である。 FIG. 2 is a graph showing the reflectance characteristics of optical components of Example (3) and Comparative Example (1).
[図 3]実施例(12) ,比較例(7)の光学部品の反射率特性を示す図である。 FIG. 3 is a graph showing the reflectance characteristics of optical components of Example (12) and Comparative Example (7).
[図 4]実施例(15) ,比較例(8)の光学部品の反射率特性を示す図である。 FIG. 4 is a graph showing the reflectance characteristics of optical components of Example (15) and Comparative Example (8).
[図 5]実施例(16) ,比較例(9)の光学部品の反射率特性を示す図である。 FIG. 5 is a graph showing the reflectance characteristics of the optical parts of Example (16) and Comparative Example (9).
[図 6]表面抵抗値の測定方法を説明するための図である。 FIG. 6 is a diagram for explaining a method for measuring a surface resistance value.
符号の説明 Explanation of symbols
[0052] 1 光学部品 [0052] 1 Optical components
2 基材 2 Base material
3 反射防止膜 3 Antireflection film
M 第 (n— 1)層(導電材料層) M layer (n-1) layer (conductive material layer)
M 第 n層(低屈折率層) M nth layer (low refractive index layer)
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0053] 以下、図面を参照しながら本発明を実施するための最良の形態について説明するHereinafter, the best mode for carrying out the present invention will be described with reference to the drawings.
。ただし、発明の範囲は図示例に限定されない。 . However, the scope of the invention is not limited to the illustrated examples.
[0054] 図 1は、本発明に係る光学部品 1の一例を示す図であり、図 1 (a)は概略構成図、 図 1 (b)は図 1 (a)における円形 X内の部分拡大図である。 FIG. 1 is a diagram showing an example of an optical component 1 according to the present invention, and FIG. 1 (a) is a schematic configuration diagram. Fig. 1 (b) is a partially enlarged view of circle X in Fig. 1 (a).
[0055] この図に示すように、光学部品 1は、例えば車載用 DVD装置における光ピックアツ プ装置の対物レンズ等として用いられるものであり、基材 2を備えて!/、る。 As shown in this figure, the optical component 1 is used, for example, as an objective lens of an optical pick-up device in an in-vehicle DVD device, and includes a base material 2.
[0056] この基材 2は、本実施の形態においては、曲面状の光学面を有している。但し、光 学部品 1の光学面は、平面であっても良いし、回折構造などの微細構造を有してい ても良い。 [0056] The substrate 2 has a curved optical surface in the present embodiment. However, the optical surface of the optical component 1 may be a flat surface or may have a fine structure such as a diffraction structure.
[0057] また、基材 2は、高分子樹脂によって形成されている。ここで、高分子樹脂としては 、光学材料として一般的に用いられる透明の樹脂材料であれば特に制限はないが、 光学部品としての加工性を考慮すると、アクリル樹脂、ポリオレフイン樹脂、ポリカーボ ネート樹脂であることが好ましい。また、特にポリオレフイン樹脂としては、環状ォレフ イン樹脂である ZEONEX (日本ゼオン社製)や、ァペル(三井化学社製)などが好適 である。このような樹脂製品として、 ZEONEXとしては ZEONEX330R (製品名)が あり、ァペルとしては APL5014DP (製品名)がある。但し、高分子樹脂はこれらに限 るものではない。 [0057] The substrate 2 is made of a polymer resin. Here, the polymer resin is not particularly limited as long as it is a transparent resin material generally used as an optical material. However, in consideration of processability as an optical component, acrylic resin, polyolefin resin, and polycarbonate resin are used. Preferably there is. Further, as the polyolefin resin, ZEONEX (manufactured by Nippon Zeon Co., Ltd.) that is a cyclic polyolefin resin, and apell (manufactured by Mitsui Chemicals, Inc.) are suitable. As such resin products, there is ZEONEX330R (product name) as ZEONEX, and APL5014DP (product name) as lapels. However, the polymer resin is not limited to these.
[0058] 基材 2の表面には、反射防止膜 3が設けられている。なお、反射防止膜 3は、基材 2 に対して前記光ピックアップ装置の光源側に設けられていても良いし、 DVDなどの 情報記録媒体側に設けられて!/、ても良レ、し、これら両方の側に設けられて!/、ても良 い。 An antireflection film 3 is provided on the surface of the substrate 2. The antireflection film 3 may be provided on the light source side of the optical pickup device with respect to the substrate 2 or may be provided on the information recording medium side such as a DVD! /. It can be provided on both sides!
[0059] この反射防止膜 3は、反射防止機能を有する膜であり、 n個(nは例えば 4〜7の自 然数)の層 M,…から構成されている。 This antireflection film 3 is a film having an antireflection function, and is composed of n layers (n is a natural number of, for example, 4 to 7) M,.
[0060] 以下、これらの層 M, …を内側から外側に向かって第 1層 M〜第 n層 Mとすると、 最も外側の第 n層 Mの厚さは 4〜20nm、第 n層 Mよりも内側の第(n— 1)層 M―の 厚さは 3〜25nm、好ましくは 3〜; 18nmとなっている。また、第(n— 1)層 M―の表面 は、光学部品 1の表面から 4〜20nmの深さに位置している。但し、第 n層 Mは、光 学部品 1の最表面に位置していても良いし、撥水コート(図示せず)よりも内側に位置 していても良い。反射防止膜 3の外側に撥水コートを設ける場合には、光学部品 1の 表面に付着した汚れの除去を容易化することができる。なお、このような撥水コートは パーフルォロアルキルシラン、例えば SubstanceWRlPatinal (商品名、メルクジャ パン株式会社製)を材料として形成すること力 Sできる。 [0060] Hereinafter, when these layers M, ... are defined as the first layer M to the n-th layer M from the inside to the outside, the thickness of the outermost n-th layer M is 4 to 20 nm, more than the n-th layer M. The inner (n-1) layer M- has a thickness of 3 to 25 nm, preferably 3 to 18 nm. The surface of the (n-1) layer M- is located at a depth of 4 to 20 nm from the surface of the optical component 1. However, the nth layer M may be located on the outermost surface of the optical component 1 or may be located on the inner side of the water repellent coat (not shown). When a water repellent coating is provided on the outside of the antireflection film 3, it is possible to facilitate removal of dirt attached to the surface of the optical component 1. Such a water-repellent coat is a perfluoroalkyl silane such as SubstanceWRlPatinal (trade name, Merck It is possible to form S as a material.
[0061] また、反射防止膜 3の第 (n— 2)層 M 及び第 n層 Mは低屈折率材料から形成さ れており、第 (n— 1)層 M は、導電性を有する高屈折率材料から形成されて導電 材料層となっている。これにより、光学部品 1の表面抵抗値は、 105Μ Ω /口未満とな つている。 [0061] Further, the (n-2) layer M and the nth layer M of the antireflection film 3 are made of a low refractive index material, and the (n-1) layer M has a high conductivity. A conductive material layer is formed from a refractive index material. As a result, the surface resistance value of the optical component 1 is less than 10 5 Ω / mouth.
[0062] ここで、低屈折率材料としては、酸化シリコンまたは、酸化シリコン及び酸化アルミ二 ゥムの混合材料の何れか一方を含有するものを用いることができる。なお、このような 混合材料としては、例えば、 SubstanceL5 (商品名、メルクジャパン株式会社製)が 好適である。また、酸化シリコンに混合される材料は、酸化アルミニウムに限定される ものではない。 [0062] Here, as the low refractive index material, a material containing any one of silicon oxide or a mixed material of silicon oxide and aluminum oxide can be used. In addition, as such a mixed material, for example, SubstanceL5 (trade name, manufactured by Merck Japan Ltd.) is suitable. The material mixed with silicon oxide is not limited to aluminum oxide.
[0063] また、導電性を有する高屈折率材料としては、酸化インジユーム系ゃ酸化亜鉛系の 混合材料を含有するもの、具体的には酸化インジユームとスズとの混合材料 (ITO) や、酸化亜鉛とガリウムとの混合材料を含有するものを用いることができる。酸化イン ジユームとスズとの混合材料におけるスズの混合割合は 3〜; 10wt%であることが好ま しい。また、酸化インジユームゃ酸化亜鉛に混合ざれる材料は、スズゃガリウムに限 定されるものではない。 [0063] In addition, as the high refractive index material having conductivity, a material containing an indium oxide-based zinc oxide-based mixed material, specifically, a mixed material of indium oxide and tin (ITO), zinc oxide, A material containing a mixed material of gallium and gallium can be used. It is preferable that the mixing ratio of tin in the mixed material of indium oxide and tin is 3 to 10 wt%. The material mixed with indium oxide and zinc oxide is not limited to tin and gallium.
[0064] なお、以上の反射防止膜 3における第 1層 M〜第 (n— 3)層 M の材料や厚さは [0064] The materials and thicknesses of the first layer M to the (n-3) layer M in the antireflection film 3 are as follows.
1 3 13
、反射防止膜 3が全体として反射防止機能を有する限りにおいて、任意に設計可能 である。 As long as the antireflection film 3 has an antireflection function as a whole, it can be arbitrarily designed.
[0065] 以上の光学部品 1は、従来より公知の製造方法によって製造することができる。具 体的には、例えば光学部品 1の反射防止膜 3や前記撥水コートは、真空蒸着法ゃス ノ ッタ法、 CVD法などで成膜することができる。 [0065] The optical component 1 described above can be manufactured by a conventionally known manufacturing method. Specifically, for example, the antireflection film 3 of the optical component 1 and the water-repellent coating can be formed by a vacuum deposition method, a snowflake method, a CVD method, or the like.
[0066] このような光学部品 1によれば、反射防止膜 3は第 (n— 1)層 M 、つまり導電材料 層の表面を内側に有し、この導電材料層と、光学部品 1の表面との距離力 〜20nm であるので、導電材料層の表面が光学部品 1の表面に位置する場合と異なり、光学 部品 1の表面を拭いた場合にも当該表面に拭き傷が発生するのを防止することがで きる。 [0066] According to such an optical component 1, the antireflection film 3 has the (n-1) layer M, that is, the surface of the conductive material layer on the inside, and the conductive material layer and the surface of the optical component 1 Unlike the case where the surface of the conductive material layer is located on the surface of the optical component 1, the surface force of the optical component 1 is prevented from being wiped off even when the surface of the optical component 1 is wiped. can do.
[0067] また、光学部品 1表面での導電性が確実に維持されて帯電を防止する結果、汚れ の付着を防止することができる。また、光学部品 1の表面抵抗値が 105Μ Ω /口未満 であるので、より確実に光学部品 1表面での帯電を防止し、汚れの付着を防止するこ と力できる。また、導電材料層の厚さは 3〜25nm、好ましくは 3〜; 18nmであるので、 いっそう確実に光学部品 1表面での帯電を防止し、汚れの付着を防止することができ [0067] Further, as a result of the electrical conductivity on the surface of the optical component 1 being reliably maintained to prevent electrification, dirt Can be prevented. Further, since the surface resistance value of the optical component 1 is less than 10 5 Ω / mouth, it is possible to more reliably prevent the surface of the optical component 1 from being charged and prevent adhesion of dirt. In addition, since the thickness of the conductive material layer is 3 to 25 nm, preferably 3 to 18 nm, the surface of the optical component 1 can be more reliably prevented from being charged and dirt can be prevented.
[0068] また、反射防止膜 3は導電材料層よりも光学部品 1の表面側に第 n層 M、つまり低 屈折率層を有するので、当該低屈折率層によって、光学部品 1の反射防止機能を向 上させること力 Sでさる。 [0068] Further, since the antireflection film 3 has the nth layer M, that is, a low refractive index layer on the surface side of the optical component 1 relative to the conductive material layer, the antireflective function of the optical component 1 is provided by the low refractive index layer. Improve the power with S.
[0069] なお、上記の実施の形態においては、光学部品 1を単玉の光学素子として説明し たが、複数玉の光学素子としても良い。 In the above embodiment, the optical component 1 has been described as a single ball optical element, but may be a multiple ball optical element.
実施例 1 Example 1
[0070] 以下に、実施例および比較例を挙げることにより、本発明をさらに具体的に説明す る。 <光学部品の構成〉 [0070] Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples. <Configuration of optical components>
上記実施の形態における光学部品 1の実施例(1)〜(16)及び比較例(1)〜(9)と して、以下の表 1〜表 7に示す層構成の反射防止膜や撥水コートを基材 2の光学面 上に設けたものを形成した。 As examples (1) to (16) and comparative examples (1) to (9) of the optical component 1 in the above embodiment, antireflection films and water repellents having the layer structures shown in Tables 1 to 7 below are used. A coating provided on the optical surface of the substrate 2 was formed.
[0071] より詳細には、実施例(1)〜(; 11)及び比較例(1)〜(6)は、 DVD及び CDの記録 再生に使用する 2波長の光束に対応している。また、実施例(12)〜(; 14)及び比較 例(7)は、 BD (Blu-ray Disc)の記録再生に使用する 1波長の光束に対応してい る。また、実施例(15)〜(; 16)及び比較例(8)〜(9)は、 BD、 DVD及び CDの記録 再生に使用する 3波長の光束に対応して!/、る。 More specifically, Examples (1) to (; 11) and Comparative Examples (1) to (6) correspond to two-wavelength light beams used for DVD and CD recording / reproduction. In addition, Examples (12) to (; 14) and Comparative Example (7) correspond to a single wavelength light beam used for recording / reproducing BD (Blu-ray Disc). In addition, Examples (15) to (; 16) and Comparative Examples (8) to (9) correspond to three-wavelength light beams used for recording / reproducing BD, DVD and CD.
[0072] なお、これら実施例(1)〜(; 16)及び比較例(1)〜(9)では、表に示した以外の膜が 光学部品の表面側に設けられていることはないものとする。 [0072] In Examples (1) to (; 16) and Comparative Examples (1) to (9), films other than those shown in the table are not provided on the surface side of the optical component. And
[0073] また、表中、各欄中段の「d」は層の厚さを示しており、「n」は屈折率を示している。 In the table, “d” in the middle of each column indicates the thickness of the layer, and “n” indicates the refractive index.
また、「L5」材料は上述の「SubstanceL5」を示して!/、る。 The “L5” material indicates the above-mentioned “Substance L5”! /.
[0074] [表 1] 実施例(1) 実施例 (2) 実施例 (3) 実施例 (4) 基材 アベル樹脂 ァペル樹脂 アベル樹脂 アベル樹脂 [0074] [Table 1] Example (1) Example (2) Example (3) Example (4) Substrate Abel Resin Apel Resin Abel Resin Abel Resin
APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP
1層目 酸化セリウム 酸化セリウム 酸化セリウム 酸化セリウム dl = 71nm dl = 71nm dl = 71nm dl==71nm nl = 1.82 nl = 1.82 nl = 1.82 nl = 1.821st layer Cerium oxide Cerium oxide Cerium oxide Cerium oxide dl = 71nm dl = 71nm dl = 71nm dl == 71nm nl = 1.82 nl = 1.82 nl = 1.82 nl = 1.82
2層目 酸化シリコン 酸化シリコン L 5材料 酸化シリコン d2 = 118nm d2 = 118ni d2 = 118ni d2 = 118ni n2 = 1.44 n2 = 1.44 n2 = 1.48 n2 = 1.44Second layer Silicon oxide Silicon oxide L5 material Silicon oxide d2 = 118nm d2 = 118ni d2 = 118ni d2 = 118ni n2 = 1.44 n2 = 1.44 n2 = 1.48 n2 = 1.44
3層目 I T 0 I T 0 I T o I T 0 3rd layer I T 0 I T 0 I To I T 0
d3=8.1nm d3 = 8.1ni d3 = 8.1nm d3 = 8.1nra η3 = 1.89 η3 = 1.89 n3 = 1.89 η3 = 1.89 d3 = 8.1nm d3 = 8.1ni d3 = 8.1nm d3 = 8.1nra η3 = 1.89 η3 = 1.89 n3 = 1.89 η3 = 1.89
4層目 酸化シリコン 酸化シリコン L 5材料 酸化シリコン d4 = 4nm d4 = 8nm d4 = 10nm d4 = 19nm n4 = 1.44 n4 = 1.44 n4 = 1.48 n4 = 1.44 分光反射率特性 4th layer Silicon oxide Silicon oxide L5 material Silicon oxide d4 = 4nm d4 = 8nm d4 = 10nm d4 = 19nm n4 = 1.44 n4 = 1.44 n4 = 1.48 n4 = 1.44 Spectral reflectance characteristics
λ i(nm)(Rminl(%)) 750 (0.2以下) 740(0.2以下) 755 (0.2以下) 760(0.2以下) λ i (nm) (Rminl (%)) 750 (0.2 or less) 740 (0.2 or less) 755 (0.2 or less) 760 (0.2 or less)
[0075] [表 2][0075] [Table 2]
[0076] [表 3] 実施例 (5) 実施例 (6) 実施例 (7) 比較例 (5) 基材 アベル樹脂 アベル樹脂 アベル樹脂 アベル樹脂 [0076] [Table 3] Example ( 5 ) Example (6) Example (7) Comparative Example (5) Base Material Abel Resin Abel Resin Abel Resin Abel Resin
APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP APL5014DP
1層目 酸化セリウム 酸化セリウム 酸化セリウム 酸化セリゥム dl=71nm dl = 71nm dl=83nm dl=71nm nl = 1.82 nl = 1.82 nl = 1.82 nl = 1.821st layer Cerium oxide Cerium oxide Cerium oxide Cerium oxide dl = 71nm dl = 71nm dl = 83nm dl = 71nm nl = 1.82 nl = 1.82 nl = 1.82 nl = 1.82
2層目 酸化シリコン 酸化シリコン L 5材料 L 5材料 d2 = 122nm d2 = 106nm d2 = 80nm d2 = 125n n2=1.44 n2 = 1.44 n2 = 1.48 n2 = 1.48Second layer Silicon oxide Silicon oxide L5 material L5 material d2 = 122nm d2 = 106nm d2 = 80nm d2 = 125n n2 = 1.44 n2 = 1.44 n2 = 1.48 n2 = 1.48
3層目 I T 0 I T 0 I T 0 I T 0 3rd layer I T 0 I T 0 I T 0 I T 0
d3 = 3nm d3 = 24nm d3 = 2nm η3 = 1.89 η3 = 1.89 n3 = 1.89 n3 = 1.89 d3 = 3nm d3 = 24nm d3 = 2nm η3 = 1.89 η3 = 1.89 n3 = 1.89 n3 = 1.89
4層目 酸化シリコン 酸ィヒシリコン L 5材料 L 5材料 d4 = L0nm d4 = 10nm d4 = 10nm d4 = 10nm n4 = 1.44 n4 = 1.44 n4 = 1.48 n4 = 1.48 分光反射率特性 II 4th layer Silicon oxide oxysilicon L5 material L5 material d4 = L0nm d4 = 10nm d4 = 10nm d4 = 10nm n4 = 1.44 n4 = 1.44 n4 = 1.48 n4 = 1.48 Spectral reflectance characteristics II
yi i(nra)(Riinl(%)) 750 (0.2以下) 755 (0.2以下) 750(0.61以下) 750 (0.2以下) yi i (nra) (Riinl (%)) 750 (0.2 or less) 755 (0.2 or less) 750 (0.61 or less) 750 (0.2 or less)
[0077] [表 4] [0077] [Table 4]
[0078] [表 5] 実施例 (11) 実施例(12) 実施例(13) 基材 ゼォネックス樹脂 アベル樹脂 ァペル樹脂 [0078] [Table 5] Example (11) Example (12) Example (13) Base material ZEONEX resin Abel resin Apel resin
ZE0NEX33OR APL5014DP APL5014DP ZE0NEX33OR APL5014DP APL5014DP
1層目 酸化タンタル 酸化シリコン L 5材料 1st layer Tantalum oxide Silicon oxide L 5 material
dl=71nm dl=26.4nm dl=27.4nm nl=2.0 nl =1.44 nl = 1.48 dl = 71nm dl = 26.4nm dl = 27.4nm nl = 2.0 nl = 1.44 nl = 1.48
2層 0 酸化シリコン 酸化ジルコニューム 酸ィ匕ジルコニューム d2 = 91.5nm d2 = 29.5ni d2 = 33.9nm n2 = 1.44 n2 = 1.862 layers 0 Silicon oxide Zirconium oxide Zirconium oxide d2 = 91.5nm d2 = 29.5ni d2 = 33.9nm n2 = 1.44 n2 = 1.86
3層目 酸化亜鉛系材料 酸化シリコン L 5材料 3rd layer Zinc oxide-based material Silicon oxide L 5 material
d3=20nm d3 = 67na d3 = 59.9nm n3 = 1.95 n3 = 1.44 n3 = 1.48 d3 = 20nm d3 = 67na d3 = 59.9nm n3 = 1.95 n3 = 1.44 n3 = 1.48
4層目 酸化シリコン I ο I Τ 0 4th layer Silicon oxide I ο I Τ 0
d4 = 10nm d4 = 5nra d4 = 8nm n4 = l.44 η4 = 1.89 η4 = 1.89 d4 = 10nm d4 = 5nra d4 = 8nm n4 = l.44 η4 = 1.89 η4 = 1.89
5層目 酸化シリコン 酸化シリコン d5 = 10ni d5 = 10.6nm n5 II = 1.44 n5 = 1.44 分光反射率特性 5th layer Silicon oxide Silicon oxide d5 = 10ni d5 = 10.6nm n5 II = 1.44 n5 = 1.44 Spectral reflectance characteristics
λ i(nm)(Rininl(%)) 750 (0.2以下) 410(0.2以下) 4〇5(0.2以下) ] λ i (nm) (Rininl ( %)) 750 (0.2 or less) 410 (0.2) 4_Rei 5 (0.2 or less)
実施例 (I4) 比較例 (?) 実施例(15) 基材 ゼォネックス樹脂 アベル樹脂 ゼォネックス樹脂 Example (I 4 ) Comparative Example (?) Example (15) Base Material ZEONEX Resin Abel Resin ZEONEX Resin
ZE0NEX33OR APL5014DP ZE0NEX330R ZE0NEX33OR APL5014DP ZE0NEX330R
1層目 酸化シリコン 酸化シリコン 酸化シリコン dl=27.4nm dl = 18.4nra dl = 130nm nl = 1.44 nl = 1.44 nl = 1.441st layer Silicon oxide Silicon oxide Silicon oxide dl = 27.4nm dl = 18.4nra dl = 130nm nl = 1.44 nl = 1.44 nl = 1.44
2層目 酸化ジルコニューム 酸ィ匕ジルコニューム 酸ィ匕ジルコニューム d2 = 48.3nm d2 = 30.8nm d2 = 39.6nm n2 = 1.86 n2 = 1.86 n2 = 1.862nd layer Zirconium oxide Oxidyl zirconium Oxidized zirconium d2 = 48.3nm d2 = 30.8nm d2 = 39.6nm n2 = 1.86 n2 = 1.86 n2 = 1.86
3層目 酸化シリコン 酸化シリコン 酸化シリコン d3 = 41nm d3 = 82.5nm d3 = 44.5nra n3 = 1.44 n3 = 1.44 n3 = 1.443rd layer Silicon oxide Silicon oxide Silicon oxide d3 = 41nm d3 = 82.5nm d3 = 44.5nra n3 = 1.44 n3 = 1.44 n3 = 1.44
4層目 ΐ Τ Ο 酸ィヒジルコニュ一ム d4 = 13ni d4 = 28.3nra η4=1.89 n4 = 1.864th layer ΐ Τ ィ Hydylconium d4 = 13ni d4 = 28.3nra η4 = 1.89 n4 = 1.86
5層目 酸化シリコン 酸化シリコン d5 = 10.6nm d5 = 83.7nm n5 = 1.44 n5 = 1.445th layer Silicon oxide Silicon oxide d5 = 10.6nm d5 = 83.7nm n5 = 1.44 n5 = 1.44
6層目 I T 0 6th layer I T 0
d6 = 8nm η6 = 1.89 d6 = 8nm η6 = 1.89
7層目 酸化シリコン d7 = 10.5nm n7 = 1.44 分光反射率特性 7th layer Silicon oxide d7 = 10.5nm n7 = 1.44 Spectral reflectance characteristics
/ii(nm)(Rminl(%)) 4〇4(0.2以下) 410(0.2以下) 405(0.2以下)/ ii (nm) (Rminl (%)) 4 〇 4 (0.2 or less) 410 (0.2 or less) 405 (0.2 or less)
/i 2(nm)(Rmin2(%)) 720(0.5以下) ] / i 2 (nm) (Rmin2 (%)) 720 (0.5 or less)]
比較例 (8) 実施例(16) 比較例 (9) 基材 ゼォネックス樹脂 アベル樹脂 アベル樹脂 Comparative Example (8) Example (16) Comparative Example (9) Base Material ZEONEX Resin Abel Resin Abel Resin
ZE0NEX330R APL5014DP APL5014DP ZE0NEX330R APL5014DP APL5014DP
1層目 酸化シリコン 酸化シリコン 酸化シリコン 1st layer Silicon oxide Silicon oxide Silicon oxide
dl = 115.8nm dl = 120nm dl=94.9nm dl = 115.8nm dl = 120nm dl = 94.9nm
111 = 1.44 nl = 1.44 nl = 1.44 111 = 1.44 nl = 1.44 nl = 1.44
2層目 酸化ジルコニューム 酸ィヒジルコニューム 酸化ジルコニューム 2nd layer Zirconium oxide Oxidyl zirconium Zirconium oxide
d2 = 28.9nm d2 = 9.1nm d2 = 12.6nm n2 = 1.86 n2 = 1.86 n2 = 1.86 d2 = 28.9nm d2 = 9.1nm d2 = 12.6nm n2 = 1.86 n2 = 1.86 n2 = 1.86
3層目 酸化シリコン L 5材料 L 5材料 3rd layer Silicon oxide L 5 material L 5 material
d3 = 47.3nm d3 = 28.8nm d3 = 33.8nm n3 = 1.44 n3 = 1.45 n3 = 1.45 d3 = 47.3nm d3 = 28.8nm d3 = 33.8nm n3 = 1.44 n3 = 1.45 n3 = 1.45
4層目 酸ィ匕ジルコニューム 酸化ジルコニューム 酸化ジルコニューム 4th layer Acid Zirconium Zirconium Oxide Zirconium Oxide
d4 = 26nm d4 = 55.9nni d4 = 60.9nm n4 = 1.86 n4 = 1.86 n4 = 1.86 d4 = 26nm d4 = 55.9nni d4 = 60.9nm n4 = 1.86 n4 = 1.86 n4 = 1.86
5層目 酸化シリコン 酸化シリコン 酸化シリコン 5th layer Silicon oxide Silicon oxide Silicon oxide
d5 = 10.6ni d5 = 12.3nm d5 = 22.4nm n5 = 1.44 n5 = 1.44 n5 = 1.44 d5 = 10.6ni d5 = 12.3nm d5 = 22.4nm n5 = 1.44 n5 = 1.44 n5 = 1.44
6層目 酸化ジルコニューム 酸化ジルコニューム 6th layer Zirconium oxide Zirconium oxide
d6 = 60.5nm d6 = 38.4nm n6 = 1.86 n6 = 1.86 d6 = 60.5nm d6 = 38.4nm n6 = 1.86 n6 = 1.86
7層目 L 5材料 L 5材料 7th layer L 5 material L 5 material
d7 = 59.45nm d7 = 97.1nm n7 = 1.45 n7 = 1.45 d7 = 59.45nm d7 = 97.1nm n7 = 1.45 n7 = 1.45
8層目 I T 0 8th layer I T 0
d8 = 8nm d8 = 8nm
n8 = 1.89 n8 = 1.89
9層目 酸ィ匕シリコン 9th layer
d9 = llnm d9 = llnm
n9 = 1.44 n9 = 1.44
分光反射率特性 Spectral reflectance characteristics
λ i(nm)(Rminl(%)) 405(0.1以下) 420(0.6以下) 420(0.65以下) λ i (nm) (Rminl (%)) 405 (0.1 or less) 420 (0.6 or less) 420 (0.65 or less)
/i 2(nm)(Rmin2(%)) 730(0.5以下) 720 (0.4以下) 730 (0.2以下) / i 2 (nm) (Rmin2 (%)) 730 (0.5 or less) 720 (0.4 or less) 730 (0.2 or less)
[0081] <反射防止性能の評価〉 [0081] <Evaluation of antireflection performance>
上記のように形成された実施例(1)〜(16),比較例(1)〜(9)の光学部品の分光 反射率特性をレンズ反射率測定器「USPM— RU」(商品名、ォリンパス株式会社製 )で測定し、下記の基準に従って反射防止性能を評価したところ、下記表 8のような結 果が得られた。 Spectral reflectance characteristics of the optical components of Examples (1) to (16) and Comparative Examples (1) to (9) formed as described above were measured using a lens reflectance measuring instrument “USPM-RU” (trade name, Olympus). When the antireflection performance was evaluated according to the following criteria, the results shown in Table 8 below were obtained.
[0082] なお、波長 350〜; LOOOnmの分光反射率特性において極小反射率を示す最も短 レ、波長を λ (nm)、この波長 λ に対応する反射率を Rminl (%)とし、 2番目に短レ、 波長を λ (nm)、この波長 λ に対応する反射率を Rmin2 (%)とした場合に、各光[0082] It should be noted that the shortest wavelength indicating the minimum reflectance in the spectral reflectance characteristic of LOOOnm, the wavelength is 350-; the wavelength is λ (nm), and the reflectance corresponding to this wavelength λ is Rminl (%). Short, When the wavelength is λ (nm) and the reflectance corresponding to this wavelength λ is Rmin2 (%), each light
2 2 twenty two
学部品についての極小反射率 Rminl, Rmin2は上記表 1〜表 7の最下欄に示す通 りである。また、各光学部品の分光反射率特性は、例えば実施例(3)では図 2の「グ ラフ 1」、比較例(1)では図 2の「グラフ 2」、実施例(12)では図 3の「グラフ 3」、比較例 (7)では図 3の「グラフ 4」、実施例(15)では図 4の「グラフ 5」、比較例(8)では図 4の 「グラフ 6」、実施例(16)では図 5の「グラフ 7」、比較例(9)では図 5の「グラフ 8」に示 す通りである。 The minimum reflectances Rminl and Rmin2 for the school parts are as shown in the bottom column of Table 1 to Table 7 above. The spectral reflectance characteristics of each optical component are, for example, “Graph 1” in FIG. 2 in Example (3), “Graph 2” in FIG. 2 in Comparative Example (1), and FIG. 3 in Example (12). "Graph 3" in Figure 3, "Graph 4" in Figure 3 for Comparative Example (7), "Graph 5" in Figure 4 for Example (15), "Graph 6" in Figure 4 for Comparative Example (8), Example (16) is shown in “Graph 7” in FIG. 5, and Comparative Example (9) is shown in “Graph 8” in FIG.
(反射防止性能の評価レベル) (Evaluation level of antireflection performance)
•実施例( 1 )〜(; 11 )及び比較例( 1 )〜(6)の場合 • In the case of Examples (1) to (; 11) and Comparative Examples (1) to (6)
〇:極小反射率の波長 λ 1が 750±20nmにあり、その波長 λ 1の反射率 Rminlが 0 . 7%未満。光ピックアップ装置の対物レンズとして用いた場合に、情報の記録、再生 において全く実用上の問題なし。 ○: The wavelength λ 1 of the minimum reflectance is 750 ± 20 nm, and the reflectance Rminl of the wavelength λ 1 is less than 0.7%. When used as an objective lens for an optical pickup device, there is no practical problem in recording and reproducing information.
△:波長 λΐが 750±20nmにあり、反射率 Rminlが 0. 7%以上で 1%未満。記録、 再生において実用上の問題なし。 Δ: Wavelength λΐ is 750 ± 20 nm, reflectivity Rminl is 0.7% or more and less than 1%. No practical problems in recording and playback.
X:上記〇,△の基準をともに満たさない。記録、再生において実用上の問題あり。 •実施例(12)〜(; 14)及び比較例(7)の場合 X: Both the above ○ and △ criteria are not satisfied. There are practical problems in recording and playback. • Examples (12) to (; 14) and Comparative Example (7)
〇:極小反射率の波長 λ 1が 405±20nmにあり、その波長 λ 1の反射率 Rminlが 0 . 7%未満。記録、再生において全く実用上の問題なし。 ○: The wavelength λ 1 of the minimum reflectance is 405 ± 20 nm, and the reflectance Rminl of the wavelength λ 1 is less than 0.7%. There is no practical problem in recording and playback.
△:波長 λΐ力 05±20nmにあり、反射率 Rminl力 SO. 7%以上で 1. 0%未満。記 録、再生において実用上の問題なし。 Δ: Wavelength λ Repulsive force 05 ± 20nm, reflectivity Rminl force SO. 7% or more and less than 1.0%. There are no practical problems in recording and playback.
X:上記〇,△の基準をともに満たさない。記録、再生において実用上の問題あり。 •実施例(15)〜(; 16)及び比較例(8)〜(9)の場合 X: Both the above ○ and △ criteria are not satisfied. There are practical problems in recording and playback. • In the case of Examples (15) to (; 16) and Comparative Examples (8) to (9)
〇:極小反射率の波長 λ 1が 405±20nmにあり、その波長 λ 1の反射率 Rminlが 0 . 7%未満。更に、極小反射率の波長え 2が 700±50nmにあり、その波長え 2の反 射率 Rmin2が 0. 7%未満。記録、再生において全く実用上の問題なし。 ○: The wavelength λ 1 of the minimum reflectance is 405 ± 20 nm, and the reflectance Rminl of the wavelength λ 1 is less than 0.7%. Furthermore, the wavelength 2 of the minimum reflectance is 700 ± 50 nm, and the reflectance Rmin2 of the wavelength 2 is less than 0.7%. There is no practical problem in recording and playback.
△:波長 λΐ力 05±20nmにあり、反射率 Rminl力 SO. 7%以上で 1%未満。更に、 極小反射率の波長え 2が 700 ±50nmにあり、その波長え 2の反射率 Rmin2が 0. 7 %以上で 1%未満。記録、再生において実用上の問題なし。 X:上記〇, △の基準をともに満たさない。記録、再生において実用上の問題あり c Δ: Wavelength λ repulsive force 05 ± 20nm, reflectivity Rminl force SO. 7% or more and less than 1%. Furthermore, the wavelength 2 of the minimum reflectance is 700 ± 50 nm, and the reflectance Rmin2 of the wavelength 2 is 0.7% or more and less than 1%. No practical problems in recording and playback. X: Neither of the above ○ and △ criteria is satisfied. There is a practical problem in recording or playback c
[0083] [表 8] [0083] [Table 8]
[0084] <帯電防止性能の評価〉 [0084] <Evaluation of antistatic performance>
また、実施例(1)〜(; 16) ,比較例(1)〜(9)の光学部品として、下記の測定試料(1 ) , (2)を作成した後、その表面抵抗値を極超絶縁計(SM— 10E型、東亜電波工業 株式会社製)で実測または計算し、下記の基準に従って帯電防止性能を評価したと ころ、下記表 9や上記表 8のような結果が得られた。 In addition, after preparing the following measurement samples (1) and (2) as optical parts of Examples (1) to (; 16) and Comparative Examples (1) to (9), the surface resistance value was When measured or calculated with an insulation meter (SM-10E type, manufactured by Toa Denpa Kogyo Co., Ltd.) and evaluated the antistatic performance according to the following criteria, the results shown in Table 9 and Table 8 above were obtained.
(測定試料) (Measurement sample)
測定試料(1):直径 φ 30mm,厚さ 3mmの円盤状プラスチックテストピース 測定試料 (2):対象とする形状の光学部品 Measurement sample (1): Disc-shaped plastic test piece with a diameter of 30 mm and a thickness of 3 mm Measurement sample (2): Optical component of the target shape
なお、これら測定試料(1) , (2)の反射防止膜や撥水コートは、真空蒸着法ゃスパ ッタ法、 CVD法などを用い、反射防止膜形成装置によって同一条件で形成した。 The antireflection film and the water repellent coating of these measurement samples (1) and (2) were formed under the same conditions by an antireflection film forming apparatus using a vacuum deposition method, a sputtering method, a CVD method, or the like.
[0085] また、測定試料(1)は実施例(1)についてのみ作成し、測定試料(2)は実施例(1) 〜(; 16) ,比較例(1)〜(9)のそれぞれにつ!/、て作成した。 (測定 ·計算方法) [0085] The measurement sample (1) was prepared only for Example (1), and the measurement sample (2) was prepared for each of Examples (1) to (; 16) and Comparative Examples (1) to (9). I made it! (Measurement and calculation method)
ステップ 1:表面抵抗値換算係数 Rso/Rの算出 Step 1: Calculation of surface resistance value conversion coefficient Rso / R
まず、上記の測定試料(1)について、反射防止膜を有する光学面の表面抵抗値 R so (単位: M Ω /口)を前記極超絶縁計で測定した。 First, for the measurement sample (1), the surface resistance value R so (unit: MΩ / port) of the optical surface having the antireflection film was measured with the ultra-insulation meter.
[0086] 一方、測定試料(2)について、図 6に示すように、まず、反射防止膜でコートされた 光学面に銀ペースト剤などの導電性塗料で電極 5a, 5bを形成し、当該電極 5a, 5b 間の抵抗値 R (単位: M Ω )を前記極超絶縁計 6で測定した。 On the other hand, for the measurement sample (2), as shown in FIG. 6, first, electrodes 5a and 5b are formed on the optical surface coated with the antireflection film with a conductive paint such as a silver paste agent, and the electrodes The resistance value R (unit: MΩ) between 5a and 5b was measured with the ultra-insulation meter 6.
[0087] そして、測定された表面抵抗値 Rso及び抵抗値 Rから Rso/Rを算出し、この値を 表面抵抗値換算係数とした。 [0087] Then, Rso / R was calculated from the measured surface resistance value Rso and the resistance value R, and this value was used as a surface resistance value conversion coefficient.
[0088] なお、以上のステップ 1は実施例(1)についてのみ行った。これにより、測定試料(1 )力、ら表面抵抗値 Rsoを実測して Rso = 4 X 104M Q /口の結果を得た。また、測定 試料(2)から抵抗値 Rを実測して R= 2 X 103M Qの結果を得た。そして、表面抵抗 値換算係数 Rso/R= 20の結果を得た。 Note that the above step 1 was performed only for the example (1). As a result, the measurement sample (1) force and the surface resistance value Rso were measured, and the result of Rso = 4 × 10 4 MQ / mouth was obtained. Further, the resistance value R was measured from the measurement sample (2), and the result of R = 2 × 10 3 MQ was obtained. A result of a surface resistance value conversion coefficient Rso / R = 20 was obtained.
ステップ 2:表面抵抗ィ直 Rsの測定 Step 2: Surface resistance straight Rs measurement
実施例(1)〜(; 16) ,比較例(1)〜(9)の測定試料(2)について、上記ステップ 1で 使用したものと同形状 ·同配置の電極 5a, 5bを試料表面に形成した後(図 6参照)、 当該電極 5a, 5b間の抵抗値 R (単位: Μ Ω )を前記極超絶縁計 6で実測し、下記の 計算式により表面抵抗値 Rsを求めた。即ち、実施例(2)〜(; 16) ,比較例(1)〜(9) については、測定試料(2)のみを作成して抵抗値 Rを測定し、実施例(1)について 求めた表面抵抗値換算係数 Rso/R ( = 20)を掛けることで表面抵抗値 Rsを求めた For the measurement samples (2) of Examples (1) to (; 16) and Comparative Examples (1) to (9), electrodes 5a and 5b with the same shape and arrangement as those used in Step 1 above were applied to the sample surface. After the formation (see FIG. 6), the resistance value R (unit: Ω Ω) between the electrodes 5a and 5b was measured with the ultra-insulation meter 6, and the surface resistance value Rs was determined by the following formula. That is, with respect to Examples (2) to (; 16) and Comparative Examples (1) to (9), only the measurement sample (2) was prepared and the resistance value R was measured to obtain Example (1). The surface resistance value Rs was obtained by multiplying the surface resistance value conversion factor Rso / R (= 20).
〇 Yes
[0089] Rs = RX (Rso/R) [0089] Rs = RX (Rso / R)
なお、表面抵抗値 Rsや抵抗値 Rの値は測定環境の湿度の影響を受けやす!/、ため 、上記の測定は相対湿度 20%、温度 15〜25°Cの低湿条件下で行った。 Since the surface resistance value Rs and the resistance value R are easily affected by the humidity of the measurement environment! /, The above measurement was performed under low humidity conditions with a relative humidity of 20% and a temperature of 15 to 25 ° C.
(帯電防止性能の評価レベル) (Evaluation level of antistatic performance)
〇:表面抵抗値 Rsが 105Μ Ω /口未満。動的状態でも帯電防止効果あり。 ◯: Surface resistance Rs is less than 10 5 ΜΩ / mouth. Antistatic effect even in a dynamic state.
八:表面抵抗直1¾が105〜7^[ 0 /ロ。静的状態で帯電防止効果あり。 Eight: surface resistance straight 1¾ 10 5-7 ^ [0 / b. Antistatic effect in static state.
X:表面抵抗値 Rsが 107Μ Ω /口以上。表面に静電荷が蓄積し、帯電防止効果なし [0090] なお、上記の評価基準は、「帯電防止材料の最新技術と応用展開」(出版社:(株) ジーェムシ一出版)に基づいて設定した。 X: Surface resistance Rs is 10 7 ΜΩ / mouth or more. Static charge accumulates on the surface and has no antistatic effect The above evaluation criteria were set based on “the latest technology and application development of antistatic materials” (publisher: Gemichi Publishing Co., Ltd.).
[0091] [表 9] [0091] [Table 9]
[0092] 但し、上記の表 9において、例えば「10E + n」(nは自然数)とは、「10n」を意味する However, in Table 9 above, for example, “10E + n” (n is a natural number) means “10 n ”.
<防汚性能の評価 > <Evaluation of antifouling performance>
また、実施例(1)〜(; 16) ,比較例(1)〜(9)の光学部品としての上記測定試料ひ) , (2)の防汚による透過率変動量を測定し、下記の基準に従って防汚性能を評価し たところ、上記表 8のような結果が得られた。 Further, the transmittance variation due to antifouling in Examples (1) to (; 16) and Comparative Examples (1) to (9) as optical components was measured. Evaluate antifouling performance according to standards As a result, the results shown in Table 8 were obtained.
(測定方法) (Measuring method)
まず、従来より公知の透過率測定装置により、実施例(1)〜(; 11)及び比較例(1) 〜(6)では波長 650nmの光束透過率を、実施例(12)〜(; 16)及び比較例(7)〜(9 )では波長 405nmの光束透過率を、それぞれ測定試料(2)を用いて測定した。次に 、湿度を 20%以下に維持してタバコの煙を充満させたガラス容器の中に各実施例, 比較例の測定試料(2)を配置して 1週間放置した後、同様の条件で透過率を測定し た。 First, with a conventionally known transmittance measuring device, the luminous flux transmittance at a wavelength of 650 nm was measured in Examples (1) to (; 11) and Comparative Examples (1) to (6). ) And Comparative Examples (7) to (9), the luminous transmittance at a wavelength of 405 nm was measured using the measurement sample (2). Next, after placing the measurement sample (2) of each Example and Comparative Example in a glass container filled with cigarette smoke while maintaining the humidity at 20% or less and left for one week, the same conditions were applied. The transmittance was measured.
(防汚性能の評価レベル) (Evaluation level of antifouling performance)
〇:放置後の透過率低下が 1 %未満。 ◯: The transmittance decrease after standing is less than 1%.
Δ:放置後の透過率低下が 1 %以上〜 2 %未満。 Δ: Decrease in transmittance after standing is from 1% to less than 2%.
X:放置後の透過率低下が 2%以上。 X: The transmittance decrease after standing is 2% or more.
<膜強度の評価〉 <Evaluation of film strength>
また、実施例(1)〜(; 16) ,比較例(1)〜(9)の光学部品としての上記測定試料(1) , (2)の膜強度を測定し、下記の基準に従って評価したところ、上記表 8のような結果 が得られた。 In addition, the film strengths of the measurement samples (1) and (2) as optical components of Examples (1) to (; 16) and Comparative Examples (1) to (9) were measured and evaluated according to the following criteria: However, the results shown in Table 8 above were obtained.
(測定方法) (Measuring method)
測定試料(2)の表面を、イソプロピルアルコールを染み込ませた綿棒で拭き、表面 の反射防止膜または撥水コートが剥がれるまでの拭き回数を測定した。なお、拭き荷 重は 5〜10gの間とした。また、測定は回折構造などの凸凹形状のない部分に対して 行った。 The surface of the measurement sample (2) was wiped with a cotton swab soaked with isopropyl alcohol, and the number of times of wiping until the antireflection film or water repellent coat on the surface was peeled was measured. The wiping load was between 5 and 10 g. In addition, the measurement was performed on a portion having no uneven shape such as a diffractive structure.
(膜強度の評価レベル) (Evaluation level of film strength)
〇: 50回未満で最表層の反射防止膜,撥水コートが剥がれなレ、。 ○: Less than 50 times, the outermost antireflection film and water repellent coating are not peeled off.
△ : 10回未満で最表層の反射防止膜,撥水コートが剥がれず、 50回未満で剥がれ る。 X: 10回未満で最表層の反射防止膜,撥水コートが剥がれる。 Δ: Less than 10 times, the outermost antireflection film and water repellent coating are not peeled off, and less than 50 times. X: The outermost antireflection film and water-repellent coating peel off in less than 10 times.
<総合評価〉 <Comprehensive evaluation>
以上の結果に基づき、下記の評価レベルに従って実施例(1)〜(; 16) ,比較例(1) 〜(9)の光学部品の総合評価を行ったところ、上記表 8のような結果が得られた。 (総合評価の評価レベル) Based on the above results, comprehensive evaluation of optical components of Examples (1) to (; 16) and Comparative Examples (1) to (9) was conducted according to the following evaluation levels. Obtained. (Evaluation level of comprehensive evaluation)
〇: 4項目全ての評価項目が〇。実用上極めて優れて!/、る。 ○: All four evaluation items are ○. It is extremely excellent in practical use!
△ : 4項目中、 1個のみが△で、他は全て〇。実用上問題なし。 △: Only one of the four items is △, and the others are all ◯. There is no practical problem.
X:上記〇,△の基準をともに満たさない。実用上問題あり。 X: Both the above ○ and △ criteria are not satisfied. There are practical problems.
[0093] これにより、導電材料層(第 (n— 1)層)の厚さが 3nm以上、 25nm以下で、かつ導 電材料層表面と光学部品の最外表面との距離が 4nm以上、 20nm以下の場合には 、総合評価は△レベル以上となり、実用上問題のないことが分かった。 [0093] Thereby, the thickness of the conductive material layer ((n-1) layer) is 3 nm or more and 25 nm or less, and the distance between the surface of the conductive material layer and the outermost surface of the optical component is 4 nm or more and 20 nm. In the following cases, the overall evaluation was △ level or higher, and it was found that there was no practical problem.
[0094] 但し、特に導電材料層の厚さが 18nmより大きい場合には、実施例(7) , (11) ,比 較例(6)に示すように、膜強度が△レベルになることが分かった。この理由は、導電 材料層が金属酸化物や酸化シリコンの層と比較して膜強度、例えば硬度や緻密性、 耐擦性などが低いためと考えられる。また、樹脂製の基材に導電材料層を成膜する 時には、ガラス製の基材に成膜する場合と比較して基材温度を高く維持できずに導 電材料層の膜強度が低くなつてしまうため、導電材料層の厚さを大きくすると、その 表面側に酸化シリコンなどの層を設けても反射防止膜全体の膜強度が良好に成りに くいためと考えられる。 However, particularly when the thickness of the conductive material layer is larger than 18 nm, the film strength may become a Δ level as shown in Examples (7), (11) and Comparative Example (6). I understood. This is presumably because the conductive material layer has lower film strength, such as hardness, denseness, and abrasion resistance, compared to the metal oxide or silicon oxide layer. In addition, when the conductive material layer is formed on the resin base material, the base material temperature cannot be maintained higher than when the conductive material layer is formed on the glass base material and the film strength of the conductive material layer is low. Therefore, if the thickness of the conductive material layer is increased, the film strength of the entire antireflection film is unlikely to be good even if a layer such as silicon oxide is provided on the surface side.
[0095] これに対し、導電材料層の厚さが 3nm以上、 18nm以下の場合には、上記のような 問題が改善され、総合評価は〇レベルとなることが分かった。 [0095] On the other hand, it was found that when the thickness of the conductive material layer was 3 nm or more and 18 nm or less, the above problems were improved, and the overall evaluation was rated as “◯”.
[0096] 一方、導電材料層の厚さが 25nmより大きい場合には、表面抵抗値は小さくなるも のの、反射防止性能を良好に維持することが困難になり、また、導電材料層の表面 側に酸化シリコンなどの層を設けても膜強度が向上しないことが分かった(比較例(6On the other hand, when the thickness of the conductive material layer is larger than 25 nm, the surface resistance value is small, but it is difficult to maintain good antireflection performance, and the surface of the conductive material layer It was found that even if a layer such as silicon oxide was provided on the side, the film strength was not improved (Comparative Example (6
)参照)。 )reference).
[0097] また、導電材料層の厚さが 3nm未満の場合には、表面抵抗値が大きくなり、また、 蒸着条件による抵抗値の変動が大きくなる結果、帯電防止性能や防汚性能が低下 することが分かった(比較例(5)参照)。 [0097] When the thickness of the conductive material layer is less than 3 nm, the surface resistance value increases, and the resistance value fluctuates greatly depending on the deposition conditions, resulting in a decrease in antistatic performance and antifouling performance. (See Comparative Example (5)).
[0098] また、導電材料層の表面側に酸化シリコン等を積層する場合に、この層の厚さが 4 nm未満であると、導電材料層の低い膜強度に起因して反射防止膜の膜強度を向上 させること力 Sできな!/、のに対し(比較例(2)参照)、 4nm以上であると膜強度を向上さ せることができることが分かった(実施例(1)〜(; 16)参照)。なお、実施例(7) , (11) で膜強度が△レベルに若干低下しているのは、上述のように導電材料層の層厚が 1 8nmより大きいためであると考えられる。また、酸化シリコン等の層厚が 20nm以上で あると、膜強度の向上は可能であるものの、反射防止層の表面抵抗値が大きくなり、 帯電防止性能、防汚性能が低下することが分かった (比較例(3) , (4)参照)。 [0098] Further, when silicon oxide or the like is laminated on the surface side of the conductive material layer, if the thickness of this layer is less than 4 nm, the film of the antireflection film is caused by the low film strength of the conductive material layer. In contrast to the ability to improve the strength S /! (See Comparative Example (2)), it was found that the film strength could be improved when the thickness was 4 nm or more (Examples (1) to (; See 16)). Examples (7), (11) The reason why the film strength slightly decreases to the Δ level is considered to be because the thickness of the conductive material layer is larger than 18 nm as described above. In addition, it was found that when the layer thickness of silicon oxide or the like is 20 nm or more, the film strength can be improved, but the surface resistance value of the antireflection layer increases, and the antistatic performance and antifouling performance are lowered. (See comparative examples (3) and (4)).
Claims
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| JP2010085886A (en) * | 2008-10-02 | 2010-04-15 | Konica Minolta Opto Inc | Optical element and method of manufacturing the same |
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| CN104090313B (en) * | 2014-07-25 | 2015-11-18 | 丹阳丹耀光学有限公司 | A kind of superhard waterproof membrane and processing technology thereof |
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| JPH0634802A (en) * | 1992-07-20 | 1994-02-10 | Fuji Photo Optical Co Ltd | Conductive antireflection film |
| JP2005181519A (en) * | 2003-12-17 | 2005-07-07 | Fuji Photo Film Co Ltd | Antireflection film, polarizing plate and image display device |
| JP2005302088A (en) * | 2004-04-07 | 2005-10-27 | Konica Minolta Opto Inc | Objective lens and optical pickup device |
| JP2006184493A (en) * | 2004-12-27 | 2006-07-13 | Fuji Photo Film Co Ltd | Optical functional film and its manufacturing method, and polarizing plate and image display device using the same |
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| JP2006221142A (en) * | 2005-01-14 | 2006-08-24 | Sony Corp | Optical element, lens barrel, imaging device, and electronic apparatus |
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| US5667880A (en) * | 1992-07-20 | 1997-09-16 | Fuji Photo Optical Co., Ltd. | Electroconductive antireflection film |
| JPH09152502A (en) * | 1995-11-28 | 1997-06-10 | Toppan Printing Co Ltd | Conductive anti-reflective coating |
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2007
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS6113202A (en) * | 1984-06-29 | 1986-01-21 | Nec Corp | Laser mirror |
| JPH0634802A (en) * | 1992-07-20 | 1994-02-10 | Fuji Photo Optical Co Ltd | Conductive antireflection film |
| JP2005181519A (en) * | 2003-12-17 | 2005-07-07 | Fuji Photo Film Co Ltd | Antireflection film, polarizing plate and image display device |
| JP2005302088A (en) * | 2004-04-07 | 2005-10-27 | Konica Minolta Opto Inc | Objective lens and optical pickup device |
| JP2006184849A (en) * | 2004-11-30 | 2006-07-13 | Toppan Printing Co Ltd | Antireflection laminate, optical functional filter, optical display device and optical article |
| JP2006184493A (en) * | 2004-12-27 | 2006-07-13 | Fuji Photo Film Co Ltd | Optical functional film and its manufacturing method, and polarizing plate and image display device using the same |
| JP2006221142A (en) * | 2005-01-14 | 2006-08-24 | Sony Corp | Optical element, lens barrel, imaging device, and electronic apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010085886A (en) * | 2008-10-02 | 2010-04-15 | Konica Minolta Opto Inc | Optical element and method of manufacturing the same |
| US9188768B2 (en) | 2008-10-02 | 2015-11-17 | Konica Minolta, Inc. | Optical element and production method of the same |
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| CN101501768A (en) | 2009-08-05 |
| JPWO2008018340A1 (en) | 2009-12-24 |
| CN101501768B (en) | 2011-10-26 |
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