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WO2008088831A3 - Dispositif à circuit bobiné ayant un circuit actif et procédés pour fabriquer celui-ci - Google Patents

Dispositif à circuit bobiné ayant un circuit actif et procédés pour fabriquer celui-ci Download PDF

Info

Publication number
WO2008088831A3
WO2008088831A3 PCT/US2008/000582 US2008000582W WO2008088831A3 WO 2008088831 A3 WO2008088831 A3 WO 2008088831A3 US 2008000582 W US2008000582 W US 2008000582W WO 2008088831 A3 WO2008088831 A3 WO 2008088831A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuit device
layer
coiling
making
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2008/000582
Other languages
English (en)
Other versions
WO2008088831A2 (fr
Inventor
Joseph Smith
Harvey C Nathanson
Robert S Howell
Christopher F Kirby
Garrett Storaska
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Systems Corp
Original Assignee
Northrop Grumman Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Systems Corp filed Critical Northrop Grumman Systems Corp
Publication of WO2008088831A2 publication Critical patent/WO2008088831A2/fr
Publication of WO2008088831A3 publication Critical patent/WO2008088831A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un dispositif qui comprend une couche de bobinage, une couche de dispositif à circuit et un circuit microélectronique actif fabriqué sur la couche de dispositif à circuit. La couche de bobinage est formée sur une surface de la couche de dispositif à circuit et couplée à celle-ci. La couche de bobinage a des contraintes intrinsèques qui provoquent un bobinage de la couche de bobinage et de la couche de dispositif à circuit y compris le circuit microélectronique lorsque la couche de dispositif à circuit est libérée d'un substrat sous-jacent. Un dispositif à circuit bobiné est formé.
PCT/US2008/000582 2007-01-17 2008-01-17 Dispositif à circuit bobiné ayant un circuit actif et procédés pour fabriquer celui-ci Ceased WO2008088831A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/653,964 2007-01-17
US11/653,964 US7868358B2 (en) 2003-06-06 2007-01-17 Coiled circuit device with active circuitry and methods for making the same

Publications (2)

Publication Number Publication Date
WO2008088831A2 WO2008088831A2 (fr) 2008-07-24
WO2008088831A3 true WO2008088831A3 (fr) 2008-09-04

Family

ID=39638833

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/000582 Ceased WO2008088831A2 (fr) 2007-01-17 2008-01-17 Dispositif à circuit bobiné ayant un circuit actif et procédés pour fabriquer celui-ci

Country Status (2)

Country Link
US (1) US7868358B2 (fr)
WO (1) WO2008088831A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI341495B (en) * 2006-10-18 2011-05-01 Mstar Semiconductor Inc Rfid tags, rfid electronic devices and related methods for theft-prevention and data transmission
US8831437B2 (en) 2009-09-04 2014-09-09 Luxtera, Inc. Method and system for a photonic interposer
US8877616B2 (en) 2008-09-08 2014-11-04 Luxtera, Inc. Method and system for monolithic integration of photonics and electronics in CMOS processes
CN102450106B (zh) * 2009-05-27 2014-07-16 皇家飞利浦电子股份有限公司 占用传感器
DE102012221932A1 (de) * 2012-11-30 2014-06-05 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Aufgerollte, dreidimensionale Feldeffekttransistoren und ihre Verwendung in der Elektronik, Sensorik und Mikrofluidik
NL2012484B1 (en) * 2014-03-20 2016-01-18 Stichting Incas3 Sensor system, Mote and a Motes-system for sensing an environmental parameter.
US10653027B2 (en) 2016-12-15 2020-05-12 Ingu Solutions Inc. Sensor device, systems, and methods for determining fluid parameters
CN108946656A (zh) * 2017-05-25 2018-12-07 联华电子股份有限公司 半导体制作工艺

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US20040236223A1 (en) * 2003-05-22 2004-11-25 Siemens Medical Solutions Usa, Inc.. Transducer arrays with an integrated sensor and methods of use
US20050013151A1 (en) * 2003-06-06 2005-01-20 Nathanson Harvey C. Coiled circuit device and method of making the same
US20050042831A1 (en) * 2003-08-19 2005-02-24 Manoj Mehrotra Dual salicide process for optimum performance
US20050158939A1 (en) * 2002-08-14 2005-07-21 Advanced Analogic Technologies, Inc Method of fabricating isolated semiconductor devices in epi-less substrate
US20060152416A1 (en) * 2003-06-04 2006-07-13 Farrokh Mohamadi Phase management for beam-forming applications
US20060227184A1 (en) * 1997-07-15 2006-10-12 Silverbrook Research Pty Ltd Micro-electromechanical valve having transformable valve actuator
US20060234488A1 (en) * 2003-10-10 2006-10-19 Yihwan Kim METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
US20060263979A1 (en) * 2005-05-18 2006-11-23 Hasan Nejad Methods of forming devices associated with semiconductor constructions

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US4510551A (en) * 1984-05-21 1985-04-09 Endeco Canada Limited Portable memory module
JPH06125153A (ja) * 1992-10-12 1994-05-06 Shinko Electric Ind Co Ltd 窒化アルミニウム回路基板及びその製造方法
US5689136A (en) * 1993-08-04 1997-11-18 Hitachi, Ltd. Semiconductor device and fabrication method
US6464687B1 (en) * 1999-03-09 2002-10-15 Ball Semiconductor, Inc. Implantable drug delivery system
US6183267B1 (en) * 1999-03-11 2001-02-06 Murray Hill Devices Ultra-miniature electrical contacts and method of manufacture
US6496351B2 (en) * 1999-12-15 2002-12-17 Jds Uniphase Inc. MEMS device members having portions that contact a substrate and associated methods of operating
CA2305069A1 (fr) 2000-04-12 2001-10-12 Yanwei Zhang Element micro-usine et methode de fabrication connexe
AU2001262948A1 (en) 2000-04-25 2001-11-07 Standard Mems, Inc. Louvers for spacecraft thermal control
US6856225B1 (en) 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US6396620B1 (en) 2000-10-30 2002-05-28 Mcnc Electrostatically actuated electromagnetic radiation shutter
JP4070176B2 (ja) * 2000-12-01 2008-04-02 株式会社山武 球状半導体装置
IL140281A0 (en) * 2000-12-13 2002-02-10 Coil-based electronic and electrical components (such as coils, transformers, filters and motors) based on nanotechnology
US6655964B2 (en) 2001-02-09 2003-12-02 Xerox Corporation Low cost integrated out-of-plane micro-device structures and method of making
ITTO20010250A1 (it) 2001-03-16 2002-09-16 Fiat Ricerche Dispositivo micro-otturatore ottico a controllo elettrostatico con elettrodo fisso non trasparente.
DE10122324A1 (de) * 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrierte monolithische Schaltung
US6798200B2 (en) * 2002-06-03 2004-09-28 Long-Sheng Fan Batch-fabricated gradient and RF coils for submicrometer resolution magnetic resonance imaging and manipulation

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060227184A1 (en) * 1997-07-15 2006-10-12 Silverbrook Research Pty Ltd Micro-electromechanical valve having transformable valve actuator
US20030130590A1 (en) * 1998-12-23 2003-07-10 Tuan Bui Method and apparatus for providing patient care
US20050158939A1 (en) * 2002-08-14 2005-07-21 Advanced Analogic Technologies, Inc Method of fabricating isolated semiconductor devices in epi-less substrate
US20040236223A1 (en) * 2003-05-22 2004-11-25 Siemens Medical Solutions Usa, Inc.. Transducer arrays with an integrated sensor and methods of use
US20060152416A1 (en) * 2003-06-04 2006-07-13 Farrokh Mohamadi Phase management for beam-forming applications
US20050013151A1 (en) * 2003-06-06 2005-01-20 Nathanson Harvey C. Coiled circuit device and method of making the same
US20050042831A1 (en) * 2003-08-19 2005-02-24 Manoj Mehrotra Dual salicide process for optimum performance
US20060234488A1 (en) * 2003-10-10 2006-10-19 Yihwan Kim METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe
US20060263979A1 (en) * 2005-05-18 2006-11-23 Hasan Nejad Methods of forming devices associated with semiconductor constructions

Also Published As

Publication number Publication date
US7868358B2 (en) 2011-01-11
WO2008088831A2 (fr) 2008-07-24
US20070117392A1 (en) 2007-05-24

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