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WO2008071413A3 - Procédé de préparation d'un film semi-conducteur poreux sur un substrat - Google Patents

Procédé de préparation d'un film semi-conducteur poreux sur un substrat Download PDF

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Publication number
WO2008071413A3
WO2008071413A3 PCT/EP2007/010893 EP2007010893W WO2008071413A3 WO 2008071413 A3 WO2008071413 A3 WO 2008071413A3 EP 2007010893 W EP2007010893 W EP 2007010893W WO 2008071413 A3 WO2008071413 A3 WO 2008071413A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
porous semiconductor
substrate
semiconductor layer
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/010893
Other languages
English (en)
Other versions
WO2008071413A2 (fr
Inventor
Michael Duerr
Gabriele Nelles
Akio Yasuda
Yusuke Suzuki
Kazuhiro Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Deutschland GmbH
Original Assignee
Sony Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Deutschland GmbH filed Critical Sony Deutschland GmbH
Priority to US12/518,705 priority Critical patent/US20100024877A1/en
Priority to JP2009540657A priority patent/JP2010512629A/ja
Publication of WO2008071413A2 publication Critical patent/WO2008071413A2/fr
Publication of WO2008071413A3 publication Critical patent/WO2008071413A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2095—Light-sensitive devices comprising a flexible sustrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Hybrid Cells (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé de préparation d'un film semi-conducteur poreux sur un substrat, un film produit selon ce procédé, un dispositif électronique comprenant un tel film et l'utilisation d'un tel film.
PCT/EP2007/010893 2006-12-13 2007-12-12 Procédé de préparation d'un film semi-conducteur poreux sur un substrat Ceased WO2008071413A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/518,705 US20100024877A1 (en) 2006-12-13 2007-12-12 Method of preparing a porous semiconductor film on a substrate
JP2009540657A JP2010512629A (ja) 2006-12-13 2007-12-12 基板上の多孔性半導体層膜の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06025828A EP1933343A1 (fr) 2006-12-13 2006-12-13 Méthode de production d'un film semiconductor poreux sur un substrat
EPEP06025828 2006-12-13

Publications (2)

Publication Number Publication Date
WO2008071413A2 WO2008071413A2 (fr) 2008-06-19
WO2008071413A3 true WO2008071413A3 (fr) 2008-10-02

Family

ID=37944186

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/010893 Ceased WO2008071413A2 (fr) 2006-12-13 2007-12-12 Procédé de préparation d'un film semi-conducteur poreux sur un substrat

Country Status (5)

Country Link
US (1) US20100024877A1 (fr)
EP (2) EP1933343A1 (fr)
JP (1) JP2010512629A (fr)
CN (1) CN101611462A (fr)
WO (1) WO2008071413A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5200398B2 (ja) * 2007-03-26 2013-06-05 大日本印刷株式会社 酸化物半導体電極用積層体、耐熱基板付酸化物半導体電極、酸化物半導体電極、色素増感型太陽電池セル、および色素増感型太陽電池モジュール
KR101173344B1 (ko) * 2009-10-30 2012-08-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101650580B1 (ko) * 2010-06-30 2016-08-23 서울시립대학교 산학협력단 태양전지 및 그 제조방법
KR101697371B1 (ko) * 2010-11-22 2017-01-17 서울시립대학교 산학협력단 태양전지 및 그 제조방법
KR101279586B1 (ko) * 2011-01-20 2013-06-27 한국과학기술연구원 플렉서블 광전극과 그 제조방법, 및 이를 이용한 염료감응 태양전지
KR101709198B1 (ko) * 2011-04-20 2017-02-23 주식회사 포스코 염료 감응형 태양 전지의 제조 방법
CN102394178B (zh) * 2011-11-08 2012-12-05 南京大学 利用紫外辐照光电极提高染料敏化太阳电池转换效率方法
KR101273567B1 (ko) * 2011-11-22 2013-06-11 한국과학기술연구원 염료감응 태양전지용 상대전극 및 이의 제조방법
WO2015006021A1 (fr) * 2013-07-12 2015-01-15 Electric Film Llc Serrure de porte à alimentation photovoltaïque
CN103762084A (zh) * 2014-01-13 2014-04-30 华东师范大学 一种染料敏化太阳电池及其光阳极的低温制备方法
CN105489313B (zh) * 2014-09-17 2017-09-01 谢建德 高导电性基板及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1589548A1 (fr) * 2004-04-23 2005-10-26 Sony Deutschland GmbH Méthode de production d'un film semiconducteur poreux sur un substrat.
JP2006313693A (ja) * 2005-05-09 2006-11-16 Dainippon Printing Co Ltd 中間転写媒体の製造方法、酸化物半導体電極の製造方法、および色素増感型太陽電池の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE131953T1 (de) 1990-04-17 1996-01-15 Ecole Polytech Photovoltaische zellen
SE514600C2 (sv) 1999-05-25 2001-03-19 Forskarpatent I Uppsala Ab Metod för tillverkning av nanostrukturerade tunnfilmselektroder
US20060008580A1 (en) * 2000-11-24 2006-01-12 Gabrielle Nelles Hybrid solar cells with thermal deposited semiconductive oxide layer
DE60033038T2 (de) * 2000-11-24 2007-08-23 Sony Deutschland Gmbh Hybridsolarzelle mit thermisch abgeschiedener Halbleiteroxidschicht
EP1289028B1 (fr) * 2001-09-04 2008-01-16 Sony Deutschland GmbH Dispositif photovoltaique et procédé de sa fabrication
WO2003054894A1 (fr) * 2001-12-21 2003-07-03 Sony International (Europe) Gmbh Pile solaire hybride a gel polymere
EP1463073A1 (fr) * 2003-03-24 2004-09-29 Sony International (Europe) GmbH Film poreux ayant un gradient de la diffusion de la lumière
EP1507298A1 (fr) * 2003-08-14 2005-02-16 Sony International (Europe) GmbH Cellule solaire basée sur des nanotubes de carbon
EP1513171A1 (fr) * 2003-09-05 2005-03-09 Sony International (Europe) GmbH Cellule solaire sensibilisé par un colorant et méthode pour sa fabrication
EP1589549A1 (fr) * 2004-04-23 2005-10-26 Sony Deutschland GmbH Méthode de production d'un film semiconductor poreux sur un substrat.
KR101156531B1 (ko) * 2005-12-07 2012-06-20 삼성에스디아이 주식회사 플렉서블 반도체 전극의 제조방법 및 그에 의해 제조된반도체 전극, 이를 이용한 태양전지
EP1826788A1 (fr) * 2006-02-22 2007-08-29 Sony Deutschland Gmbh Méthode d'optimisation des positions du bord des bandes de conduction et de valence d'un semi-conducteur pour un dispositif photoactif
DE602006007679D1 (de) * 2006-03-31 2009-08-20 Sony Deutschland Gmbh Verfahren zur Herstellung eines vernetzten Polymer-Gels
EP1936644A3 (fr) * 2006-12-22 2011-01-05 Sony Deutschland Gmbh Cellule photovoltaïque

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1589548A1 (fr) * 2004-04-23 2005-10-26 Sony Deutschland GmbH Méthode de production d'un film semiconducteur poreux sur un substrat.
WO2005104153A1 (fr) * 2004-04-23 2005-11-03 Sony Deutschland Gmbh Procede de production d'un film semi-conducteur poreux sur un substrat
JP2006313693A (ja) * 2005-05-09 2006-11-16 Dainippon Printing Co Ltd 中間転写媒体の製造方法、酸化物半導体電極の製造方法、および色素増感型太陽電池の製造方法

Also Published As

Publication number Publication date
US20100024877A1 (en) 2010-02-04
EP2015325A2 (fr) 2009-01-14
EP1933343A1 (fr) 2008-06-18
WO2008071413A2 (fr) 2008-06-19
EP2015325A3 (fr) 2009-11-25
JP2010512629A (ja) 2010-04-22
CN101611462A (zh) 2009-12-23

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