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WO2007132845A1 - Composant organique à semiconducteur et son procédé de fabrication - Google Patents

Composant organique à semiconducteur et son procédé de fabrication Download PDF

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Publication number
WO2007132845A1
WO2007132845A1 PCT/JP2007/059959 JP2007059959W WO2007132845A1 WO 2007132845 A1 WO2007132845 A1 WO 2007132845A1 JP 2007059959 W JP2007059959 W JP 2007059959W WO 2007132845 A1 WO2007132845 A1 WO 2007132845A1
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Prior art keywords
organic semiconductor
film
self
semiconductor device
group
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Japanese (ja)
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Hiroshi Imada
Hiroyuki Hanato
Toshihiro Tamura
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an organic semiconductor device and a manufacturing method thereof. More specifically, the present invention relates to an organic semiconductor device having an organic semiconductor film in a predetermined region and a method for manufacturing the same.
  • the transistor has the advantage that it can be easily manufactured and a flexible substrate can be used. Transistors with these advantages are expected to reduce costs when used in applications such as smart cards, electronic tags and displays.
  • TFT thin film transistor
  • the dry process is not preferred because it requires a vacuum line in the process.
  • the wet process is a simple, low-temperature process and low-cost process, and therefore, the above advantages of the organic semiconductor film can be utilized.
  • an organic semiconductor film is formed as a gate insulating film by depositing an organic semiconductor material such as pentacene on the gate insulating film.
  • the gate insulating film is treated with octadecyltrichlorosilane (OTCS) to adjust the surface energy of the gate insulating film.
  • OTCS octadecyltrichlorosilane
  • the organic semiconductor film is produced by vapor deposition, but as described above, the gate insulating film is treated with a surface treatment agent such as OTCS, so that the crystallinity and TFT characteristics of the organic semiconductor film are obtained. It has become clear that this can be improved.
  • Patent Document 1 Patent Document 1
  • ink jet method and a dispense method because of excellent material recoverability and high selectivity of film forming position.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2004-253375
  • Non-Patent Document 1 IEEE Electron Device Lett., 18, 606, 1997
  • the inkjet and dispensing methods are methods in which a nozzle head is moved to a desired position and a solution of several pL to several / zL is ejected electrically and mechanically.
  • the nozzle head can be mechanically powered arbitrarily, the film forming position of the organic semiconductor film can be controlled.
  • the solution discharged from the nozzle head is affected by the surrounding atmosphere, temperature, and pressure, and may develop without staying at the discharge position on the substrate.
  • the substrate may be heated in order to improve the crystallinity of the organic semiconductor film or promote the evaporation of the solvent in the solution.
  • This heating reduces the viscosity of the solution by activating the thermal mobility of the solution. Therefore, the solution develops on the substrate without staying at the discharge position. In other words, despite the solution being discharged between the source Z and drain electrodes, the solution spreads to a position other than between the source Z and drain electrodes, and the film is formed at that position. There was a problem of being done.
  • a method of providing a bank is not preferable because the number of substrate processing processes increases.
  • the method of treating the gate insulating film only in a predetermined region is a method in which only a predetermined region of a substrate surface-treated with OTCS or the like is exposed with ultraviolet rays or the like (hereinafter, this method is a one-component nodule). Called turning).
  • this method the film-forming surface of the organic semiconductor film, that is, the channel is exposed to a gate insulating film that has not been treated with OTCS or the like. Therefore, the effect of improving the crystallinity of the organic semiconductor film by the surface treatment of the gate insulating film such as OTCS cannot be obtained.
  • the surface of the gate insulating film has dangling bonds of oxygen and the like, and has various chemical states. For this reason, the crystal growth of the organic semiconductor film is hindered. Therefore, the adhesion at the interface between the gate insulating film and the organic semiconductor film has been reduced, and the film uniformity of the organic semiconductor film has been reduced. These reductions have the problem of lowering the crystallinity and carrier transfer characteristics of the organic semiconductor film.
  • an object of the present invention is to provide an organic semiconductor device having a structure capable of improving the carrier transfer characteristic of an organic semiconductor film and maximizing the carrier transfer characteristic of the organic semiconductor film. Furthermore, an object of the present invention is to make it possible to control the formation position of an organic semiconductor film formed by a coating method. It is an object of the present invention to provide a method for controlling the materials and interface conditions used in the present invention.
  • the present inventors have completed the present invention by finding a method for greatly improving crystallinity and electrical properties in an organic semiconductor film.
  • an organic semiconductor device that includes a substrate and an organic semiconductor film formed in a predetermined region on the substrate, wherein the substrate on which the organic semiconductor film is formed.
  • An organic semiconductor characterized in that the surface of the plate has a surface free energy difference of 5 mjZm 2 or more larger than the surface of the substrate on which the organic semiconductor film is not formed, and is lyophobic due to the surface free energy.
  • the predetermined region where the organic semiconductor film is formed on the substrate surface has a surface free energy difference of 5 mjZm 2 or more larger than the region where the organic semiconductor film is not formed.
  • an organic semiconductor device including an organic semiconductor film that is accurately patterned by a simple method using the difference in surface free energy.
  • the patterning is, for example, applying two different types of surface treatment agents (for example, organosilane compounds) to a predetermined region where the organic semiconductor film is formed and a region other than the predetermined region. Then, it can be carried out by forming a self-assembled film comprising these surface treatment agents.
  • surface treatment agents for example, organosilane compounds
  • the application position of the solution containing the compound for forming the organic semiconductor film can be strictly controlled. Control is possible. Furthermore, the formation position of the organic semiconductor film and the size of the organic semiconductor film can be easily controlled by the shape of the mask used for patterning.
  • FIG. 1 is a schematic configuration diagram of an organic thin film transistor of the present invention.
  • the present invention can be used for any organic semiconductor device as long as it includes a substrate and an organic semiconductor film formed in a predetermined region on the substrate. Furthermore, in the present invention, the surface of the substrate on which the organic semiconductor film is formed has a difference in surface free energy that is 5 mjZm 2 or more larger than the surface of the substrate, as opposed to the formation of the organic semiconductor film. Such surface free energy imparts lyophobic properties to the substrate surface.
  • the upper limit of the difference in surface free energy is preferably 50 mjZm 2 . A more preferable difference in surface free energy is 5 to 35 mjZm 2 .
  • liquid repellency used in the present invention means that the surface of the substrate and the liquid are difficult to adapt, and “liquid repellency” means that the surface of the substrate has the above surface free energy. Based on the difference, it means that it is more difficult to blend with liquid compared to the above “liquid repellency”.
  • liquid repellency used in the present invention means having both liquid repellency and liquid repellency. Furthermore, the predetermined region has liquid repellency by having a surface free energy larger than that of other regions. The predetermined region has liquid repellency and thus has a property of preventing the organic semiconductor film from being formed in a region other than the predetermined region.
  • a predetermined region where the organic semiconductor film is formed on the substrate surface is subjected to a lyophobic liquid treatment so that the surface free energy difference is 5 mjZm 2 or more larger than the region where the organic semiconductor film is not formed. Subsequently, it can be manufactured by including a step of forming an organic semiconductor film in a predetermined region of the substrate surface.
  • organic semiconductor devices include organic TFTs, organic capacitors, organic capacitors, and organic solar cells. Of these, the present invention is preferably applied to organic TFTs.
  • the substrate includes a gate electrode and a gate insulating film thereon. Therefore, the predetermined region is on the gate insulating film. Further, the self-assembled film is formed on the gate insulating film, and the organic semiconductor film is formed on the self-assembled film. Source Z Drain electrode 1S Formed on the gate insulating film to sandwich the organic semiconductor film before forming the organic semiconductor film Or formed on the organic semiconductor film.
  • the first self-assembled film is formed on a region other than the predetermined region, and the first self-assembled film is formed on the predetermined region by 5 mJ Zm.
  • One example is a method of forming a second self-assembled film that gives a difference in surface free energy of 2 or more. Due to such first and second self-assembled films, the entire film is lyophobic and the second self-assembled film is lyophobic, so that an organic semiconductor film is efficiently formed in a predetermined region. Can be made.
  • the thicknesses of the first and second self-assembled capsules vary depending on the material constituting them, but are preferably lOnm or less. If it is thicker than lOnm, the gate voltage applied to the organic semiconductor film coated on the self-assembled film is affected, which is not preferable. Therefore, the film thickness is more preferably 0.5 ⁇ m to 10nm, and further preferably 0.5nm to 5nm.
  • FIG. 1 is a conceptual diagram of an example of an organic TFT.
  • 1 is a substrate
  • 2 is a gate electrode
  • 3 is a gate insulating film
  • 4 and 5 are source Z drain electrodes
  • 6 and 7 are self-organized from the first and second organosilane compounds.
  • Each means a film
  • 8 means an organic semiconductor film.
  • the organic TFT in Fig. 1 has a bottom gate and bottom contact structure.
  • the organic TFT of FIG. 1 includes two self-organized film 6 and 7 having different components on a gate insulating film 3, and an organic semiconductor film 8 is formed through the self-assembled film 7.
  • the structure has a structure in which a gate insulating film, two kinds of self-assembled films of different components, and an organic semiconductor film are laminated in this order. As long as this is done, the structure is not limited to that shown in FIG.
  • a structure in which a gate electrode, a gate insulating film, two self-assembled films having different components, an organic semiconductor film, and a source Z drain electrode are provided in this order on a substrate.
  • This structure is an example in which a source Z drain electrode is formed on the upper surface of an organic semiconductor film.
  • a source Z drain electrode is formed on the lower surface of the organic semiconductor film.
  • the organic TFT according to the present invention includes an organic semiconductor between a gate insulating film and an organic semiconductor film.
  • an organic semiconductor between a gate insulating film and an organic semiconductor film.
  • two self-assembled film films having different components may be provided in a predetermined pattern.
  • These two self-assembled films not only have the function of controlling the formation position of the organic semiconductor film, but also the function of controlling crystallinity and the device characteristics of the organic semiconductor film (carrier mobility, on-Z-off ratio, threshold voltage, etc.) It has a function to improve.
  • the former function is a function exhibited when the gate insulating film, the self-assembled film, and the organic semiconductor film are formed in this order.
  • the latter function is a function achieved by providing a self-organizing capsule.
  • the function of controlling the crystallinity of the organic semiconductor film is achieved by the two self-assembled films adjusting the surface free energy of the gate insulating film.
  • the solution containing the organic semiconductor film material can be uniformly adsorbed.
  • an organic semiconductor film having a large grain size and improved crystallinity can be formed.
  • the material of the gate and source Z drain electrodes is not particularly limited, and any material known in the art can be used. Specifically, metals such as gold, platinum, silver, copper and aluminum; refractory metals such as titanium, tantalum and tungsten; silicides and polycides with refractory metals; p-type or n-type highly doped silicon; ITO, Examples include conductive metal oxides such as NESA; conductive polymers such as polyethylene dioxythiophene (PEDOT).
  • PEDOT polyethylene dioxythiophene
  • the film thickness is not particularly limited, and can be appropriately adjusted to a film thickness (for example, 30 to 60 nm) used for a normal transistor.
  • the method for producing these electrodes can be appropriately selected depending on the electrode material.
  • Examples of the manufacturing method include vapor deposition, sputtering, and coating.
  • the gate insulating film is not particularly limited, and any film known in the art can be used. Specifically, silicon oxide film (thermal acid film, low-temperature acid film: LTO film, etc., high-temperature oxide film: HTO film), silicon nitride film, SOG film, PSG film, BSG film, BPSG Insulating films such as films; PZT, PLZ IV, ferroelectric or antiferroelectric films; SiOF-based films, SiOC-based films or CF-based films, or HSQ (hydrogen silsesquioxane) -based films (inorganic) that are formed by coating, MSQ (methvl sil sesquioxane) -based films, PAE (polyarylene ether) -based films, BCB-based films, porous-based films, CF-based films, and other low dielectric films.
  • silicon oxide film thermal acid film, low-temperature acid film: LTO film, etc., high-temperature oxide film: HTO film
  • the film thickness is not particularly limited, and is normally used for a transistor (for example, 5
  • the method for producing the gate insulating film can be appropriately selected depending on the type thereof, and examples thereof include vapor deposition, sputtering, and coating.
  • R 1 is a linear or branched unsubstituted alkyl group, or a fluorine atom, a hydroxyl group, a thiol group, an amino group, a silyl group, a phenyl group, or a chenyl group.
  • the organosilane compound represented by these can be used.
  • the alkyl group R 1 means the above formula (1), preferably 3 to 30 carbon atoms, more preferably an alkyl group having 8 to 18 carbon atoms.
  • halogen atom represented by X 1 , X 2 and X 3 examples include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, preferably a chlorine atom.
  • Examples of the alkoxy group having 1 to 5 carbon atoms represented by X 1 , X 2 and X 3 include a methoxy group, an ethoxy group, a propoxy group, a butoxy group and a pentoxy group, and structural isomers thereof.
  • the liquid repellency of the self-assembled film is controlled by selecting the type and length of the functional group bonded to the silyl group of the silane compound used as a material for forming the film. It can be done.
  • the first self-assembled film has an R 1 composed of an alkyl group having 8 to 18 carbon atoms and a fluoroalkyl group having 8 to 18 carbon atoms.
  • Organic system An organosilane compound having a R 1 derived from a orchid compound, wherein the second self-assembled film comprises a monocyclic aromatic group, a condensed aromatic group, a monocyclic heterocyclic group or a condensed heterocyclic group. It is preferable that the film is derived.
  • the R 1 group of the organosilane compound for the second self-assembled film is preferably a group containing a ⁇ -electron conjugated molecule.
  • Such a self-assembled film derived from an organic silane compound can have carrier mobility not only by the organic semiconductor film formed thereon but also by the self-assembled film itself.
  • Such a group containing a ⁇ -electron conjugated molecule is, for example, a group containing a monocyclic aromatic group, a condensed aromatic group, a monocyclic heterocyclic group, a condensed heterocyclic group, or the like.
  • a self-assembled film having an organic group exhibiting insulating properties can also act as part of the gate insulating film.
  • organic group exhibiting insulating properties include an alkyl group and a fluoroalkyl group.
  • alkyl groups or fluoroalkyl groups include groups having 3 to 30 carbon atoms.
  • Examples of the method for forming the self-assembled film include gas phase and liquid phase adsorption methods.
  • the gas-phase adsorption method is a Teflon (registered trademark) crucible or glass sealed container in which a self-organized film raw material (for example, an organic silane compound) and a substrate are placed together, at a high temperature of 100 ° C or higher, 2 to This is a method of heat treatment for 3 hours and adsorbing to the substrate surface.
  • a self-organized film raw material for example, an organic silane compound
  • the self-assembled film may be a monomolecular film or a cumulative film in which monomolecular films are laminated.
  • Si-O-Si networks can also be formed between adjacent organic silane compounds.
  • the raw material of the self-assembled film is dissolved in a solvent such as toluene, ethanol, chloroform, etc. to prepare a solution of about 20 mM of the raw material, and the substrate is placed in this solution. Is immersed in the substrate surface for about 24 hours. At this time, in order to shorten the reaction time, the solution in which the substrate is immersed may be heated to a temperature below the boiling point of the solvent. You can also.
  • Other examples of the liquid phase reaction include spin coating, ink jet, dispensation, and dip coating.
  • the material is the above organic silane compound
  • hydrophilization treatment method there are a method in which the substrate is irradiated with ultraviolet rays or plasma, and a method in which the substrate is immersed in a mixed solvent of sulfuric acid Z hydrogen peroxide.
  • the second self-assembled film is hydrophilized as follows in addition to the hydrophilization treatment.
  • a force may also be formed upon treatment. That is, by irradiating the predetermined region of the first self-organized film with ultraviolet rays or plasma with a mask pattern having an opening in the predetermined region, the first self-organized film is peeled from the region. This peeling is performed under the condition that only R 1 is removed and the component derived from the silyl group remains in a predetermined region. This component hydrophilizes the predetermined area.
  • the second self-assembled film formed is so that the hydrophilic silyl group side faces the substrate side.
  • the coating solution containing the organic semiconductor film material can be applied by using the difference in surface energy between the two self-assembled films (this coating can be divided into two components). Called turning). Therefore, the organic semiconductor film can be formed by a simple method.
  • the inventors of the present invention have a surface freeness between the second self-assembled film other than the region where the organic semiconductor film is formed and the predetermined region where the organic semiconductor film is formed, that is, the first self-assembled film. This is based on the finding that when the energy difference is 5 miZm 2 or more, the coating solution containing the organic semiconductor film material can be applied separately.
  • the organosilane compound constituting the first self-assembled film exhibiting lyophobic properties is specifically preferably a silane compound containing an alkyl group or a fluoroalkyl group. More preferably, the fluoroalkyl group has 8 or more carbon atoms.
  • the organosilane compound includes n-octadecyltriethoxysila. (OTES) (CAS.No. (hereinafter the same): 7399—00—0, manufactured by Alphamax Co., Ltd.), n—otadecyltrichlorosilane (112—04—9, manufactured by Alphamax Co., Ltd.), n —Decyltrichlorosilane (13829—21—5, manufactured by AMAX Co., Ltd.), (Heptadecafluor mouth 1, 1, 2, 2-tetrahydrodecyl) triethoxysilane (HFTHTES) (101947—16—4, AMAX Co., Ltd.) Manufactured).
  • OFTES n-octadecyltriethoxysila.
  • the organic silane compound constituting the second self-assembled film exhibiting liquid repellency is specifically a silane compound containing a phenyl group, a chael group, an amino group, or a hydroxyl group. It is preferable that it exists.
  • the organosilane compound includes p-aminophenol trimethoxysilane (33976-43-1, manufactured by AMAX Co., Ltd.), phenol triethoxysilane (PTES) (780 69-8).
  • the organosilane compound can be synthesized using, for example, a silly cocoon by the following Grignard reaction.
  • R 3 is a hydrogen atom, a halogen atom or a lower alkoxy group, and X 5 , X 6 and X 7 may be the same or different from each other, and a hydrogen atom, a halogen atom or an alkoxy group having 1 to 5 carbon atoms. It is a group that can give a hydroxyl group by hydrolysis like a group)
  • X 5 to X 7 can be halogen atoms such as chlorine and bromine, alkoxy groups having 1 to 5 carbon atoms such as methoxy groups, ethoxy groups, and butoxy groups. Furthermore, as long as any one of X 5 to X 7 gives a hydroxyl group, the other may be an alkyl group having 1 to 5 carbon atoms such as a methyl group, an ethyl group, or a butyl group! /.
  • organic silane compound obtained by the Grignard reaction examples include biphenylene triethoxysilane (2PTES), terferene triethoxysilane (3PTES), quater terferene triethoxysilane ( 4PTES), quinkefene-lentriethoxysilane (5P TES), tert-off-entry ethoxysilane (3TTES), quaternary-off-entry ethoxysilane (4TTES), quinquethiophenetriethoxysilane (5TTES), naphthalene entroxysilane (NTES) ) And anthralene triethoxysilane (ATES).
  • 2PTES biphenylene triethoxysilane
  • 3PTES terferene triethoxysilane
  • 4PTES quater terferene triethoxysilane
  • TTES tert-off-ent
  • the organosilane compound can also be obtained by the methods described in JP-A-2004-277413, JP-A-2005-298485, and the like.
  • reaction solution was filtered under reduced pressure to remove magnesium chloride, and then the filtrate was concentrated under reduced pressure to remove toluene and unreacted tetraethoxysilane, and the resulting solution was distilled.
  • 3PTE 3PTE
  • the synthesized product obtained here was confirmed to be 3PTES by measuring —NMR and 13 C-NMR.
  • Biphenyl-triethoxysilane (2PTES) was obtained in a yield of 50% in exactly the same manner as in Production Example 1 except that 1.5 mol of biphenyl was used in place of the terphenyl of Production Example 1.
  • the synthesized product obtained here was confirmed to be 2PTES by measuring —NMR and 13 C-NMR.
  • TTES Tertoffene ethoxysilane
  • Naphthalene 1.5 mol was used instead of terphenyl of Production Example 1, and naphthalene triethoxysilane (NTES) was obtained in a yield of 40% in exactly the same manner as Production Example 1.
  • NTES naphthalene triethoxysilane
  • Anthralene triethoxysilane (ATES) was obtained in a yield of 40% in exactly the same manner as in Production Example 1, except that 1.5 mol of anthracene was used in place of the terfal of Production Example 1.
  • the surface free energy of the self-assembled film formed on each Si wafer obtained in Test Examples 1 to 14 above was determined using pure water and iodine using MCA-2 (manufactured by Kyowa Interface Chemical Co., Ltd.).
  • the surface of the self-assembled film derived from each organosilane compound obtained in Production Examples 1 to 9 obtained above based on the Zisman method based on the value of the contact angle with methylene chloride The measurement results of free energy are shown in the following table.
  • organic semiconductor film formed on the self-assembled film a film made of a material known in the art can be used.
  • the organic semiconductor material include the following low-molecular compounds and high-molecular compounds in consideration of transistor driving or material supply.
  • the low molecular weight compound for organic semiconductor film materials a compound having a molecular weight of less than 1,000 is preferred.
  • oligocenes condensed with 3 to 10 benzene rings oligothiophenes with 3 to 10 repeats of thiophene, oligoligene with 3 to 10 repeats of benzene, benzene and bilene.
  • examples thereof include oligophenol-lentiophene compounds having 1 to 10 repeating oligophenol-lylene-benzenes, benzene and thiophene repeating 1 to 10 compounds, and derivatives thereof.
  • fullerene compounds such as fullerene (C60) and [6,6] -phenol C61 butanoic acid methyl ester (PCBM) can also be used.
  • the polymer compound for organic semiconductor film material is preferably a compound having a number average molecular weight of 10,000 or more.
  • thiophene, phenylene bilene, phenylene type, and derivatives thereof are compounds having a repeating unit force selected.
  • P3HT poly-3-hexylthiophene
  • PV polyphenylene-lene
  • derivatives thereof are particularly preferable.
  • a solvent having high solubility and boiling point for the material of the organic semiconductor film is preferable.
  • aromatic hydrocarbons such as benzene, toluene, and p-xylene
  • aliphatic halogenated hydrocarbons such as chloroform, formaldehyde, dichloroethylene, trichloroethylene, tetrachloroethylene, and 1,2-dichloroethylene
  • Aromatic halogenated hydrocarbons such as dichroic benzene and 1,2,4 triclonal benzene
  • the organic semiconductor film As a method for producing the organic semiconductor film, all coating methods such as the LB method, the dip method, and the casting method (spin coating method, ink jet method, and dispense method) can be applied. Of these, the casting method (inkjet method, dispense method) is preferable in consideration of material and mass production costs.
  • the LB method is an abbreviation of the Langmuir-Blodgett method.
  • An amphiphilic substance in which a hydrophobic group and a hydrophilic group are balanced is developed on the water surface to produce a single-layer film called a monomolecular film.
  • the dip method is a method of forming a film by immersing a substrate in a solution and then pulling it up. In the case of a material having crystallinity, a crystal having a specific structure can be grown. .
  • the casting method means a method of forming a film by dropping a solution containing a raw material at a desired position and drying, and includes a spin coating method, an ink jet method, and a dispensing method.
  • OTES organic silane compound for forming the first self-organized film (lyophobic component), and an organic silane compound for forming the second self-organized film (liquid repellent).
  • PTES obtained in Production Example 1 as a component
  • the organosilane compound obtained in Production Examples 2 to 9 was used in place of PTES.
  • a first self-assembled film derived from OTES was formed on a Si wafer by the method described in Test Example 1 using OTES.
  • the Si mask obtained above was fixed with a metal mask having a hole of 0.8 mm diameter, irradiated with 172 nm vacuum ultraviolet light for 20 minutes, and the first self-organization of the region corresponding to the hole was performed.
  • the formed film was peeled off and hydrophilized.
  • each second self-assembled film was formed in the region using PTES by the method described in Test Example 1.
  • a solution of an organic semiconductor film material was prepared using an organic semiconductor film material using black mouth form, toluene, p-xylene, benzene, and 1,2,4-trichloro mouth benzene as solvents.
  • the following table shows the results of examining the application of the organic semiconductor film material solution on the Si wafer obtained above.
  • evaluation 1 means that the second self-organization is performed on all the solutions of the organic semiconductor film material using chloroform-form, toluene, p-xylene, benzene, 1,2,4 trichloro-benzene as a solvent. This means that the organic semiconductor film can be formed only on the film.
  • evaluation 2 means that an organic semiconductor film can be formed only on the second self-assembled film with a solution using 1,2,4 trichlorobenzene, among the above solvents. This means that the second self-assembled force cannot be formed only on the capsule.
  • the surface free energy difference between the two self-assembled films is required to be about 5 mjZm 2 in order to pattern the solvent.
  • chromium was vapor-deposited on a substrate 1 having a silicon force to form a gate electrode 2.
  • a gate insulating film 3 made of a silicon thermal oxide film After baking at 1200 ° C. to form a gate insulating film 3 made of a silicon thermal oxide film, chromium and gold are vapor-deposited in this order, and source and drain electrodes (4, 5) was formed.
  • a metal mask with a diameter of 0.8 mm was fixed on the treated substrate so as to fit the channel, and then 172 nm vacuum ultraviolet light was irradiated for 20 minutes to hydrophilize only the channel.
  • the hydrophilized substrate was treated with ferretrioxysilane (PTES) in the same manner as the HFTHTES treatment method, and PTES was adsorbed only to the channel hydrophilized by the patterning treatment.
  • PTES ferretrioxysilane
  • the Si wafer was placed in a Teflon (registered trademark) crucible for contact angle evaluation.
  • the contact angle values of toluene solvent for HFTHTES and PTES were 102 ° and 65 °, respectively.
  • the contact angle was measured by MCA-2 (manufactured by Kyowa Interface Chemical Co., Ltd.).
  • the organic thin film transistor obtained above was measured for transistor characteristics using a three-probe method (4200—SCS, manufactured by Keithley Instruments Co., Ltd.).
  • the field effect mobility was 2.2 ⁇ 10 2 cm 2.
  • ZVs the on / off ratio was about 5 digits, and it was found that good performance was obtained.
  • Example 1 As in Example 1, a gate electrode, a gate insulating film, a source and a drain electrode are formed on the substrate.
  • a toluene solution of HP naphthacene was dropped onto an untreated substrate that had been formed and had no surface hydrophilization treatment, to produce an organic semiconductor film.
  • the organic thin film transistor thus obtained was measured for XRD, field effect mobility and on-Z off ratio in the same manner as in Example 1.
  • a gate electrode, a gate insulating film, a source and a drain electrode are formed on a substrate in the same manner as in Example 1, and the surface is subjected to a hydrophilic treatment, and then the entire surface is treated with HFTHTES. A toluene solution was dropped to prepare an organic semiconductor film.
  • the organic thin-film transistor thus obtained was measured for XRD, electrolytic effect mobility, and on-Z off ratio in the same manner as in Example 1.
  • Example 2 In the same manner as in Example 1, a gate electrode, a gate insulating film, a source and a drain electrode were formed on a substrate, and the surface was hydrophilized, and the entire surface was treated with PTES. A toluene solution was dropped to prepare an organic semiconductor film.
  • the gate electrode, gate insulating film, source and drain electrodes were formed on the substrate in the same manner as in Example 1, and the surface was hydrophilized, and the entire surface of the HFTHTES was treated in the same manner as in Example 1.
  • a solution of HP naphthacene in toluene was dropped onto a one-component patterning substrate that had been hydrophilized with a 0.8 mm ⁇ mask to produce an organic semiconductor film.
  • the organic thin-film transistor thus obtained was measured for XRD, electrolytic effect mobility, and on-Z off ratio in the same manner as in Example 1.
  • Example 2 In the same manner as in Example 1, a gate electrode, a gate insulating film, a source and a drain electrode are formed on a substrate, and the surface is subjected to a hydrophilic treatment. After the entire surface is treated with PTES as in Example 1, in Example 1, Toluene solution of HP naphthacene was dropped onto the 1-component patterning substrate that was hydrophilized with the 0.8mm ⁇ mask used, as in Example 1. An organic thin film transistor thus obtained was prepared.
  • the formation position of the organic semiconductor film could be strictly controlled by the one-component patterning treatment, and the coating film was formed in the channel.
  • a high crystalline film cannot be obtained, and the off-current is 10 times larger than that of a substrate in which the surface of the gate insulating film is treated with an organosilane compound. It has been found.

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  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un composant organique à semiconducteur qui inclut un substrat ainsi qu'un film organique semiconducteur formé dans une zone prescrite sur le substrat. Le composant organique à semiconducteur est caractérisé en ce que la surface du substrat sur laquelle est formé le film organique semiconducteur présente une différence d'énergies libres superficielles de 5 mJ/m2, ou bien, plus grande que celle de la surface du substrat sur laquelle n'est formé aucun film organique semiconducteur. Le composant organique à semiconducteur est également caractérisé en ce qu'il possède des caractéristiques lyophobes et un caractère répulsif par rapport au liquide amenés par l'énergie libre superficielle.
PCT/JP2007/059959 2006-05-16 2007-05-15 Composant organique à semiconducteur et son procédé de fabrication Ceased WO2007132845A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212127A (ja) * 2008-02-29 2009-09-17 Dainippon Printing Co Ltd 有機トランジスタの製造方法および有機トランジスタ
JP2009280666A (ja) * 2008-05-21 2009-12-03 Toray Fine Chemicals Co Ltd ナフタレン環を有するシリコーン重合体、およびその組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284289A (ja) * 2000-03-31 2001-10-12 Seiko Epson Corp 微細構造体の製造方法
JP2005158765A (ja) * 2003-11-20 2005-06-16 Canon Inc 電界効果型有機トランジスタおよびその製造方法
JP2005228968A (ja) * 2004-02-13 2005-08-25 Sharp Corp 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置
JP2005354051A (ja) * 2004-06-08 2005-12-22 Palo Alto Research Center Inc 印刷トランジスタ製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284289A (ja) * 2000-03-31 2001-10-12 Seiko Epson Corp 微細構造体の製造方法
JP2005158765A (ja) * 2003-11-20 2005-06-16 Canon Inc 電界効果型有機トランジスタおよびその製造方法
JP2005228968A (ja) * 2004-02-13 2005-08-25 Sharp Corp 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置
JP2005354051A (ja) * 2004-06-08 2005-12-22 Palo Alto Research Center Inc 印刷トランジスタ製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212127A (ja) * 2008-02-29 2009-09-17 Dainippon Printing Co Ltd 有機トランジスタの製造方法および有機トランジスタ
JP2009280666A (ja) * 2008-05-21 2009-12-03 Toray Fine Chemicals Co Ltd ナフタレン環を有するシリコーン重合体、およびその組成物

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