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WO2007101099A3 - Impression à haute vitesse d'une couche de chalcogène et utilisation d'une matière intermétallique - Google Patents

Impression à haute vitesse d'une couche de chalcogène et utilisation d'une matière intermétallique Download PDF

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Publication number
WO2007101099A3
WO2007101099A3 PCT/US2007/062694 US2007062694W WO2007101099A3 WO 2007101099 A3 WO2007101099 A3 WO 2007101099A3 US 2007062694 W US2007062694 W US 2007062694W WO 2007101099 A3 WO2007101099 A3 WO 2007101099A3
Authority
WO
WIPO (PCT)
Prior art keywords
group
iiia
chalcogen
elements
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/062694
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English (en)
Other versions
WO2007101099A2 (fr
Inventor
Duren Jeroen K J Van
Craig R Leidholm
Matthew R Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed by Individual filed Critical Individual
Priority to JP2008556559A priority Critical patent/JP2009528680A/ja
Priority to EP07757400A priority patent/EP1992010A2/fr
Priority to CN2007800146270A priority patent/CN101443892B/zh
Publication of WO2007101099A2 publication Critical patent/WO2007101099A2/fr
Publication of WO2007101099A3 publication Critical patent/WO2007101099A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1241—Metallic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)

Abstract

L'invention concerne des procédés et appareils pour l'impression à haute vitesse d'une matière précurseur servant à former un film d'un composé chalcogénure d'éléments des groupes IB-IIIA. Dans un mode de réalisation, le procédé consiste à former une couche de précurseur sur un substrat, ladite couche de précurseur comprenant une ou plusieurs couches discrètes. Les couches peuvent comprendre au moins une première couche contenant un ou plusieurs éléments du groupe IB et deux éléments différents du groupe IIIA ou plus et au moins une seconde couche contenant des particules de chalcogène élémentaire. On peut chauffer la couche de précurseur à une température suffisante pour faire fondre les particules de chalcogène et pour faire réagir les particules de chalcogène avec ledit ou lesdits éléments du groupe IB et lesdits deux éléments du groupe IIIA ou plus dans la couche de précurseur pour former un film d'un composé chalcogénure d'éléments des groupes IB-IIIA. Au moins un ensemble des particules dans la couche de précurseur est constitué de particules intermétalliques contenant au moins une phase d'alliage intermétallique d'éléments des groupes IB-IIIA. Le procédé peut également consister à fabriquer un film d'un composé chalcogénure d'éléments des groupes IB-IIIA en mélangeant les nanoparticules et/ou nanoglobules et/ou nanogouttelettes pour former une encre, en déposant l'encre sur un substrat, en chauffant pour le faire fondre le chalcogène supplémentaire et en faisant réagir le chalcogène avec les éléments du groupe IB et du groupe IIIA et/ou les chalcogénures de ceux-ci pour former un film dense.
PCT/US2007/062694 2006-02-23 2007-02-23 Impression à haute vitesse d'une couche de chalcogène et utilisation d'une matière intermétallique Ceased WO2007101099A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008556559A JP2009528680A (ja) 2006-02-23 2007-02-23 カルコゲン層の高スループット印刷および金属間化合物材料の使用
EP07757400A EP1992010A2 (fr) 2006-02-23 2007-02-23 Impression à haute vitesse d'une couche de chalcogène et utilisation d'une matière intermétallique
CN2007800146270A CN101443892B (zh) 2006-02-23 2007-02-23 硫属元素层的高生产量印刷和金属间材料的使用

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,522 2006-02-23
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
US11/395,438 2006-03-30

Publications (2)

Publication Number Publication Date
WO2007101099A2 WO2007101099A2 (fr) 2007-09-07
WO2007101099A3 true WO2007101099A3 (fr) 2007-11-22

Family

ID=38459748

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/062694 Ceased WO2007101099A2 (fr) 2006-02-23 2007-02-23 Impression à haute vitesse d'une couche de chalcogène et utilisation d'une matière intermétallique

Country Status (4)

Country Link
EP (1) EP1992010A2 (fr)
JP (1) JP2009528680A (fr)
CN (1) CN101443892B (fr)
WO (1) WO2007101099A2 (fr)

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DE112009000532T5 (de) * 2008-03-05 2011-03-10 Global Solar Energy, Inc., Tuscon Heizgerät für Pufferschichtaufbringung
US20100087015A1 (en) 2008-03-05 2010-04-08 Global Solar Energy, Inc. Feedback for buffer layer deposition
EP2257970A4 (fr) 2008-03-05 2015-09-02 Hanergy Hi Tech Power Hk Ltd Dépôt de couche tampon pour piles solaires à film mince
JP4540724B2 (ja) * 2008-05-20 2010-09-08 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2011023520A (ja) * 2009-07-15 2011-02-03 Panasonic Electric Works Co Ltd ｐ型半導体膜及び太陽電池
JP5144766B2 (ja) * 2009-07-27 2013-02-13 Ｊｘ日鉱日石金属株式会社 Ｃｕ−Ｇａ焼結体スパッタリングターゲット及び同ターゲットの製造方法
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US9322939B2 (en) * 2009-09-08 2016-04-26 Koninklijke Philips N.V. Imaging measurement system with a printed photodetector array
JP5639816B2 (ja) * 2009-09-08 2014-12-10 東京応化工業株式会社 塗布方法及び塗布装置
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
JP5782672B2 (ja) * 2009-11-06 2015-09-24 凸版印刷株式会社 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、及びその太陽電池の製造方法
KR101271753B1 (ko) * 2009-11-20 2013-06-05 한국전자통신연구원 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지
JP2011165790A (ja) * 2010-02-08 2011-08-25 Fujifilm Corp 太陽電池およびその製造方法
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101853885A (zh) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 太阳能吸收层浆料的制造方法、该浆料及吸收层
CN101820025A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101820032A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法
CN101818375A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101789470A (zh) * 2010-02-12 2010-07-28 昆山正富机械工业有限公司 非真空制作铜铟镓硒吸收层的方法
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
CN101937943A (zh) * 2010-08-30 2011-01-05 浙江尚越光电科技有限公司 镓铟原子比梯度分布的薄膜太阳能电池吸收层的制备方法
CN101944556A (zh) * 2010-09-17 2011-01-12 浙江尚越光电科技有限公司 一种高均匀度铜铟镓硒吸收层制备方法
JPWO2012043242A1 (ja) * 2010-09-29 2014-02-06 京セラ株式会社 光電変換装置および光電変換装置の製造方法
WO2012090938A1 (fr) * 2010-12-27 2012-07-05 凸版印刷株式会社 Cellule solaire en couches minces à semi-conducteurs composés et son procédé de production
CN102569514B (zh) * 2012-01-04 2014-07-30 中国科学院合肥物质科学研究院 一种制备铜铟镓硒太阳能电池光吸收层的方法
US9780238B2 (en) 2012-01-13 2017-10-03 The Regents Of The University Of California Metal-chalcogenide photovoltaic device with metal-oxide nanoparticle window layer
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CN103915516B (zh) * 2013-01-07 2016-05-18 厦门神科太阳能有限公司 一种cigs基薄膜光伏材料的钠掺杂方法
JP6126867B2 (ja) * 2013-02-25 2017-05-10 東京応化工業株式会社 塗布装置及び塗布方法
CN107078180B (zh) * 2014-02-14 2020-12-11 新南创新有限公司 一种光伏电池及其制造方法

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US20050183768A1 (en) * 2004-02-19 2005-08-25 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing

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US20040219730A1 (en) * 2001-04-16 2004-11-04 Basol Bulent M. Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
US20050183768A1 (en) * 2004-02-19 2005-08-25 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing

Also Published As

Publication number Publication date
EP1992010A2 (fr) 2008-11-19
CN101443892B (zh) 2013-05-01
CN101443892A (zh) 2009-05-27
WO2007101099A2 (fr) 2007-09-07
JP2009528680A (ja) 2009-08-06

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